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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

High magnetic field magnetization of a new triangular lattice antiferromagnet

In CsV(MoO 4 ) 2 , the magnetic V 3+ ions with octahedral oxygen-coordination form a geometrically frustrated triangular lattice. So fare, there is no magnetic properties reported on it. Recently, we successfully grew single crystals of CsV(MoO 4 ) 2 by using flux method. The susceptibility shows a sharp drop around 24 K, representing a long range magnetic ordering. To understand the physical properties of this new triangular lattice antiferromagnet (TLAF), we pursued high field magnetization measurements to answer two questions: (i) what is the saturation field, which will be very useful to calculate the exchange interaction of the system? (ii) Will it exhibit spin state transition, such as the up up down phase with 1/3-saturation moment as other TLAFs? Recently, we performed VSM measurements in Cell 8, Tallahassee, NHMFL, the results show that the magnetization reaches 0.38 MuB at 34 T, which is just 19% of the full moment of 2 MuB for V 3+ (3d 2 ) ions. Apparently we need higher field to reach 1/3 value or full moment.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Antiferromagnetism and Superconductivity

This work under the rubrique of Antiferromagnetism and Superconductivity covers significant aspects of the most important and highest quality of superconductors in the class of quantum materials and the influence of magnetism on the superconducting state. These compounds include high temperature superconductors, pnictide iron-based superconductors, and topological superconductors. Special note is given that crystal growth of uranium based superconductors was performed with equipment created at Northwestern University for this purpose using novel ultra-high vacuum, electron-beam, float zone refining and crystal growth, producing the best quality of bulk single crystals of UPt3 in the literature with RRR=1546.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Kondo lattice and antiferromagnetic behavior in quaternary CeTAl 4 Si 2 (T = Rh, Ir) single crystals

Here, we have explored in detail the anisotropic magnetic properties of CeRhAl 4 Si 2 and CeIrAl 4 Si 2 , which undergo two antiferromagnetic transitions, at T N1 = 12.6 and 15.5 K, followed by a second transition at T N2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K 2 ) for CeRhAl 4 Si 2 and CeIrAl 4 Si 2 , respectively, classifying these materials as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Unique Helical Magnetic Order and Field-Induced Phase in Trillium Lattice Antiferromagnet EuPtSi

Magnetic transition phenomena in cubic chiral antiferromagnet EuPtSi with T N = 4.0 K were investigated by means of single crystal neutron diffraction. At 0.3 K in the ground state, magnetic peaks emerge at positions represented by an ordering vector q 1 =(0.2,0.3,0) and its cyclic permutation. Upon heating, an additional magnetic peak splitting with hysteresis was uncovered at around T$*\atop{N}$~2.5 K, indicating the presence of a first-order commensurate–incommensurate transition with q$*\atop{1}$=(0.2,0.3,δ) (δ max ≃ 0.04) at T$*\atop{N}$. A half-polarized neutron scattering experiment for polarization parallel to the scattering vector revealed that polarization antiparallel to the scattering vector has stronger intensity in both magnetic phases. This feature clarifies the single chiral character of the helical structure with moments lying perpendicular to the ordering vector in both ordered states. Under a vertical magnetic field of 1.2 T for B ∥[1,1,1] at 1.9 K entering into the so-called A phase, magnetic peaks form characteristic hexagonal patterns in the equatorial scattering plane around nuclear peaks. An ordering vector q A ≃(±0.09,±0.20,∓0.28) of the A-phase has similar periodic length as q 1 , and could be the hallmark of a formation of skyrmion lattice in EuPtSi.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spin Wave Excitations in Honeycomb Antiferromagnet MnTiO 3

Using inelastic neutron scattering, we investigate the spin wave excitations on the antiferromagnetic MnTiO 3 (T N = 65 K), which has the stacked honeycomb structure. At T = 2 K, the spin wave energy extends up to 10.7 meV with the zone-center anisotropy gap of 0.8 meV. Whereas the dispersion is also strong along the direction perpendicular to the honeycomb planes, the exchange cancellation causes the magnetic interactions to be effectively anisotropic below TN. Furthermore, while the spin wave spectrum survives at temperatures above TN, we find that the magnetic interactions become more anisotropic within the paramagnetic phase. These results suggest that the magnetic interaction in MnTiO 3 crosses over from being three dimensional to two dimensional above T N .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides

Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.

Analytis, James G.↗
DOE OSTI2012

Investigation on the antiferromagnetic component in the intrinsic exchange bias in structurally single phase Cr{sub 2}Te{sub 3} thin film

We report the intrinsic exchange bias in structurally single phase Cr{sub 2}Te{sub 3} thin film grown by low temperature molecular beam epitaxy. The hysteresis loop shift is confirmed due to the ferromagnet/antiferromagnet coupling rather than surface spin disorder effect or minor loop effect. The AFM component attributing to the exchange bias stems from the vacancy Cr layer in Cr{sub 2}Te{sub 3} and is of two dimensions. The magnetic properties of the AFM component are investigated by studying the temperature dependence and the measure field dependence of coercivity and hysteresis loop shift. The blocking temperature is determined to be about 110 K. It is found that the two dimensional AFM component would lose its irreversibility for larger applied measure field.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Mixing antiferromagnets to tune NiFe-[IrMn/FeMn] interfacial spin-glasses, grains thermal stability, and related exchange bias properties

Spintronics devices and in particular thermally assisted magnetic random access memories require a wide range of ferromagnetic/antiferromagnetic (F/AF) exchange bias (EB) properties and subsequently of AF materials to fulfil diverse functionality requirements for the reference and storage. For the reference layer, large EB energies and high blocking temperature (T{sub B}) are required. In contrast, for the storage layer, mostly moderate T{sub B} are needed. One of the present issues is to find a storage layer with properties intermediate between those of IrMn and FeMn and in particular: (i) with a T{sub B} larger than FeMn for better stability at rest-T but lower than IrMn to reduce power consumption at write-T and (ii) with improved magnetic interfacial quality, i.e., with reduced interfacial glassy character for lower properties dispersions. To address this issue, the EB properties of F/AF based stacks were studied for various mixed [IrMn/FeMn] AFs. In addition to EB loop shifts, the F/AF magnetic interfacial qualities and the AF grains thermal stability are probed via measurements of the low- and high-temperature contributions to the T{sub B} distributions, respectively. A tuning of the above three parameters is observed when evolving from IrMn to FeMn via [IrMn/FeMn] repetitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Study of Ising antiferromagnet with Dzyaloshinskii-Moriya interaction

We have studied the ground state phase diagram of the Ising model with DM interaction in 1D rings using linear spin wave theory. We have also computed the properties using exact diagonalization of finite rings of sizes up to 32. It is shown that the ground state has two phases, a gapped Neel order phase in the D < J limit and a gapless chiral phase in the D > J limit. The results are in good agreement between spin wave theory and exact diagonalization..

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Phase diagram of CeSb 2 from magnetostriction and magnetization measurements: Evidence for ferrimagnetic and antiferromagnetic states

Cerium diantimonide (CeSb 2 ) is one of a family of rare-earth-based magnetic materials that exhibit metamagnetism, enabling control of the magnetic ground state through an applied magnetic field. At low temperatures, CeSb 2 hosts a rich phase diagram with multiple magnetically ordered phases for many of which the order parameter is only poorly understood. In this work, we report a study of its metamagnetic properties by scanning tunneling microscopy (STM) and magnetization measurements. We use STM measurements to characterize the sample magnetostriction with subpicometer resolution from magnetic field and temperature sweeps. This allows us to directly assess the bulk phase diagram as a function of field and temperature and relate spectroscopic features from tunneling spectroscopy to bulk phases. Our magnetostriction and magnetization measurements indicate that the low-temperature ground state at zero field is ferrimagnetic. Quasiparticle interference mapping shows evidence for a reconstruction of the electronic structure close to the Fermi energy upon entering the magnetically ordered phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spin valves based on Mn{sub 75}Ir{sub 25} antiferromagnet with controllable functional parameters

Using the example of spin valves of the Ta(50 Å)/Ni{sub 80}Fe{sub 20}(30 Å)/Co{sub 90}Fe{sub 10}(15 Å)/Cu(28 Å)/Co{sub 90}Fe{sub 10}(20 Å)/Mn{sub 75}Ir{sub 25}(50 Å)/Ta(20 Å) composition, factors controlling the hysteresis properties are studied for the case of macro- and microscopic sizes of an experimental sample. It is shown that a linear change in the magnetoresistance with small hysteresis while retaining the giant magnetoresistance effect at a level of 8% can be obtained in a micro-object (meander) using thermomagnetic treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn 2 Sb 2

Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of YbMn 2 Sb 2 under pressure. Single-crystal X-ray diffraction reveals a pressure-induced structural transition from the space group trigonal P$\overline{3}$m1 to the monoclinic P2 1 /m phase near 3.5 GPa, which remains stable up to 10 GPa. Magnetization measurements display an anomalously weak net magnetic moment and the absence of Curie–Weiss behavior up to 400 K, suggesting the formation of short-range Mn moment pairs that cancel macroscopically and subsequently evolve into long-range order upon cooling. Temperature-dependent resistivity shows semiconducting behavior with a transition at ∼119 K at ambient pressure, while pressure induces a dramatic suppression of resistance and the emergence of metallic-like temperature dependence, stabilized beyond 5 GPa. This pressure-driven semiconductor-metal transition is consistent with our density functional theory calculations, confirming the closing of the band gap under compression. Neutron diffraction under pressure identifies an incommensurate magnetic structure with antiparallel correlations between paired spins. Together, these results demonstrate how pressure-driven structural tuning and competing exchange interactions stabilize unconventional magnetic states in this low-dimensional magnetic semiconductor.

antiferromagnetic semiconductor↗
DOE OSTI2015

Selective adsorption in two porous triazolate–oxalate-bridged antiferromagnetic metal-azolate frameworks obtained via in situ decarboxylation of 3-amino-1,2,4-triazole-5-carboxylic acid

Solvothermal reactions of metal salts, 3-amino-1,2,4-triazole-5-carboxylic acid (H{sub 2}atzc) and ammonium oxalate in different temperature produced two metal azolate frameworks, namely, [Cu{sub 3}(atzc){sub 2}(atz)(ox)]·1.5H{sub 2}O (1) and [Co{sub 5}(atz){sub 4}(ox){sub 3}(HCOO){sub 2}]·DMF (2) (H{sub 2}atzc=3-amino-1,2,4-triazole-5-carboxylic acid, Hatz=3-amino-1,2,4-triazole, and ox=oxalate), in which the atzc precusor was in situ decarboxylated. Structural determination reveals that 1 contains [Cu{sub 3}(atzc){sub 2}(atz)]{sup 2−} layers of mixed μ{sub 4}-atzc and μ{sub 3}-atz ligands, which are pillared by ox{sup 2−} groups to form a 3D porous framework. Compound 2 contains 2D layers with basic spindle-shaped decanuclear units, which extended by ox{sup 2−} and formates to form 3D porous framework. Gas adsorption investigation revealed that two kinds of frameworks exhibited selective CO{sub 2} over N{sub 2} sorption. Moreover, activated 2 shows H{sub 2} storage capacity. Additionally, magnetic properties of both the compounds have been investigated. - Graphical abstract: Solvothermal reactions of metal salts, 3-amino-1,2,4-triazole-5-carboxylate and oxalate produced two metal azolate frameworks, which could store gas molecules, especially H{sub 2} due to small pores. in situ decarboxylation of precursor was observed. - Highlights: • Two MAFs were synthesized via in situ decarboxylation of H{sub 2}atzc. • Both activated frameworks exhibited selective CO{sub 2} over N{sub 2} sorption. • Activated 2 could adsorb H{sub 2}, which makes it promising candidates for gas storage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗