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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Mapping the structural–mechanical landscape of amorphous carbon with ReaxFF molecular dynamics

We use ReaxFF molecular dynamics (MD) to investigate the relationship between structural and mechanical properties in bulk and nanostructured amorphous carbon (a-C). The liquid-quench MD method is used to generate isotropic bulk samples with mass densities ranging from 0.96 to 3.29 g/cm3. Structural analysis identifies two types of structures with distinct short- and medium-range order: lower-density sp2-dominated a-C, which is characterized by a bimodal ring-size distribution, and higher-density sp3-dominated tetrahedral amorphous carbon (ta-C), exhibiting a unimodal ring-size distribution. Stress–strain MD simulations and analysis reveal how an atomistic structure impacts elastic properties and post-yield atomic rearrangements. All stretched structures demonstrate elastic isotropy and plasticity driven by a ring-size expansion mechanism reflected in changes in ring statistics. The plastic region is substantially larger in ta-C than in a-C due to the post-yield shift from sp3 to sp2 C dominant bonding. In both a-C and ta-C, ultimate failure occurs when a reactive crack, traversed by long sp chains, forms and propagates predominantly perpendicular to the direction of the applied strain. Oxygen infiltration into the fractured region significantly reduces stress resistance, primarily through the early rupture of long sp chains. MD simulations and analysis are extended to a-C slabs, a-C nanotubes, and partially a-C nanotubes. The latter nanostructure highlights the differences between the elastically isotropic a-C walls, which develop circumferential cracking, and the crystalline walls, which tear along crystallographic directions. These results provide a strong foundation for further computational characterization of a-C materials.

Dernov, A. (ORCID:0009000004220973)↗
DOE OSTI2017

Understanding the mechanisms of amorphous creep through molecular simulation

Significance The individual and collective molecular displacements in an amorphous solid undergoing plastic deformation are simulated by an atomistic method that allows incremental motions to be observed over a time window of fractions of seconds. Because the timescale matches well with the conditions of experimental measurements, simulation details provide dynamical evidence for the fundamental mechanisms of amorphous creep. In particular, knowledge of the interplay between diffusion (flow) and mechanical deformation processes enables us to explain the stress and temperature behavior of the experimental data as well as the validity of model descriptions of molecular mechanisms in terms of spatially and temporally heterogeneous fluctuations.

42 ENGINEERING↗
DOE OSTI2012

CRYSTALLIZATION EXPERIMENTS OF SiO{sub 2}-RICH AMORPHOUS SILICATE: APPLICATION TO SiO{sub 2}-RICH CIRCUMSTELLAR DUST AND GEMS

Crystallization experiments of relatively SiO{sub 2}-rich amorphous silicates using the mean chemical composition of the silicate portions in GEMS (glass with embedded metal and sulfide), which is a major component in anhydrous interplanetary dust particles and a primitive material of the early solar system, were performed to understand the presence of crystalline silica around young stars and crystallization in GEMS. Olivine crystallized at {approx}900-1400 K, probably prior to pyroxene. Three different polymorphs of pyroxene, protopyroxene, orthopyroxene, and clinopyroxene, were identified at {>=}1000 K. Cristobalite, which is one of the silica polymorphs, crystallized only at high temperatures ({>=}1500 K). We obtained time-temperature-transformation (TTT) crystallization diagrams. These results suggest that crystallization of a silica polymorph is kinetically difficult in a day or so at {approx}900-1400 K even for the SiO{sub 2}-saturated composition, while the crystallization might be possible after metastable olivine crystallization if duration is long enough. The TTT diagram also indicates that the GEMS cooling timescale was {approx}10{sup 5} s if they condensed at 1000 K as amorphous silicates and annealed during cooling after the condensation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

OPTICAL CONSTANTS OF NH{sub 3} AND NH{sub 3}:N{sub 2} AMORPHOUS ICES IN THE NEAR-INFRARED AND MID-INFRARED REGIONS

Ammonia ice has been detected on different astrophysical media ranging from interstellar medium (ISM) particles to the surface of various icy bodies of our solar system, where nitrogen is also present. We have carried out a detailed study of amorphous NH{sub 3} ice and NH{sub 3}:N{sub 2} ice mixtures, based on infrared (IR) spectra in the mid-IR (MIR) and near-IR (NIR) regions, supported by theoretical quantum chemical calculations. Spectra of varying ice thicknesses were obtained and optical constants were calculated for amorphous NH{sub 3} at 15 K and 30 K and for a NH{sub 3}:N{sub 2} mixture at 15 K over a 500-7000 cm{sup –1} spectral range. These spectra have improved accuracy over previous data, where available. Moreover, we also obtained absolute values for the band strengths of the more prominent IR features in both spectral regions. Our results indicate that the estimated NH{sub 3} concentration in ISM ices should be scaled upward by ∼30%.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Hard x-ray methods for studying the structure of amorphous thin films and bulk glassy oxides

High-energy photon diffraction minimizes many of the corrections associated with laboratory x-ray diffractometers, and enables structure factor measurements to be made over a wide range of momentum transfers. The method edges us closer toward an ideal experiment, in which coordination numbers can be extracted without knowledge of the sample density. Three case studies are presented that demonstrate new hard x-ray methods for studying the structure of glassy and amorphous materials. First, the methodology and analysis of high-energy grazing incidence on thin films is discussed for the case of amorphous In 2 O 3 . Additionally, the connectivity of irregular InO 6 polyhedra are shown to exist in face-, edge- and corner-shared configurations in the approximate ratio of 1:2:3. Secondly, the technique of high-energy small and wide angle scattering has been carried out on laser heated and aerodynamically levitated samples of silica-rich barium silicate (20BaO:80SiO 2 ), from the single phase melt at 1500 C-o to the phase separated glass at room temperature. Based on Ba-O coordination numbers of 6 to 7, it is argued that the although the potential of Ba is ionic, it is weak enough to cause the liquid-liquid immiscibility to become metastable. Lastly, high-energy small and wide angle scattering has also been applied to high water content (up to 12 wt.%) samples of hydrous SiO 2 glass quenched from 1500 C-o at 4 GPa. An increase of Si 1 O 2 correlations at 4.3 angstrom is found to be consistent with an increase in the population of three-membered SiO 4 rings at the expense of larger rings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Temperature dependence of structural, dynamical, and electronic properties of amorphous Bi 2 Te 3 : an ab initio study

Bismuth telluride (Bi 2 Te 3 ) has garnered significant interest in thermoelectric applications and three-dimensional topological insulators due to its unique electronic, transport, and thermal properties. Bi 2 Te 3 and Sb 2 Te 3 chalcogenide compounds have the same crystal structure. While Sb 2 Te 3 has been shown to be a prototypical phase change memory (PCM) compound along the pseudobinary tie-line of Ge-Sb-Te alloys, whether Bi 2 Te 3 can also exhibit PCM functionality is still not well established. In this work, a systematic study on the structural, dynamical, and electronic properties of amorphous Bi 2 Te 3 during the quenching process has been performed by using ab initio molecular dynamics simulations. Pair correlation function, coordination number, bond-angle distribution functions, and a novel atomistic cluster alignment method are used to explore the structural characteristics of Bi 2 Te 3 as a function of temperature. Our study shows that there are many distorted octahedral clusters in amorphous Bi 2 Te 3 . In comparison with the local structures in Sb 2 Te 3 , we found that the degree of distortion of the octahedrons in the Bi 2 Te 3 system is smaller than that in Sb 2 Te 3 system. Moreover, the changes in the dynamical properties of Bi 2 Te 3 from liquid to glassy state are also explored. The approximate range of liquid-to-glass transition temperature is determined to be between 673 and 723 K. The electronic properties of Bi2Te 3 and Sb 2 Te 3 are also analysed by density-of-states and Bader charge calculations, both of them in glass state are semiconductors. Our studies provide useful insights into the local structure and dynamical properties of Bi 2 Te 3 at the atomistic level during the fast cooling process, and suggest that the compound can be a candidate for PCM materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Exploring dielectric properties in atomistic models of amorphous boron nitride

Abstract We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about 100 atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about 10.000 atoms) embedding varying concentrations of sp 1 , sp 2 and sp 3 bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.

Materials Science↗
DOE OSTI2026

Experimental observation of short-range magnetic correlations in amorphous Nb 2 O 5 and Ta 2 O 5 thin films

We use muon spin rotation/relaxation/resonance ( μ SR ) to investigate the magnetic properties of niobium pentoxide ( Nb 2 O 5 ) and tantalum pentoxide ( Ta 2 O 5 ) thin films. In both oxides, we observe a magnetic response at the lowest available temperature of 2.8 K. This response appears to be structurally dependent: thermally oxidized Ta 2 O 5 with low crystallinity demonstrates suppressed magnetism, while fully amorphous Ta 2 O 5 demonstrates local static magnetism. In contrast, amorphous Nb 2 O 5 is dominated by magnetic fluctuations and is strongly magnetically disordered compared to Ta 2 O 5 . Our results suggest that these fundamental differences in the magnetism of Ta and Nb oxides could explain the performance limitations in superconducting qubits and resonators.

Krasnikova, Y. V. [Fermilab] (ORCID:00000002893659↗
DOE OSTI2020

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ( a - Fe x Ge 1 - x ) lacks long-range structural order and hence lacks a significant Brillouin zone. The magnetization of a - Fe x Ge 1 - x is well explained by the Stoner model for Fe concentrations x above the onset of magnetic order around x = 0.4 , indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe- 3 d states sufficiently to polarize the electronic structure despite k being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity ρ x y AH relative to crystalline FeGe; this ρ x y AH is compared to density-functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied k states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of a - Fe x Ge 1 - x ( 0.38 ≤ x ≤ 0.61 ). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to k space. This effect and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effective theory of superconductivity in strongly coupled amorphous materials

A theory of phonon-mediated superconductivity in strong-coupling amorphous materials is developed based on an effective description of structural disorder and its effect on the vibrational spectrum. The theory accounts for the diffusivelike transport of vibrational excitations due to disorder-induced scattering within the Eliashberg theory of strong-coupling superconductivity. The theory provides a good analytical description of the Eliashberg function $α^2F(ω)$ in comparison with experiments and allows one to disentangle the effects of transverse and longitudinal excitations on the Eliashberg function. In particular, it shows that the transverse excitations play a crucial role in driving an increase or excess in the Eliashberg function at low energy, which is related to the boson peak phenomenon in vibrational spectra of glasses. This low-energy excess, on the one hand, drives an enhancement of the electron-phonon coupling but at the same time reduces the characteristic energy scale $ω_{\text{log}}$ in the Allen-Dynes formula. As a consequence, the nonmonotonicity of $T_c$ as a function of alloying (disorder) in Pb-based systems can be rationalized. Further, the case of Al-based systems, where disorder increases $T_c$ from the start, is also analyzed. General material-design principles for enhancing $T_c$ in amorphous superconductors are presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Torque magnetometry of an amorphous-alumina/strontium-titanate interface

Here, we report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al 2 O 3 thin film grown on a crystalline SrTiO 3 substrate (α -AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO 3 /SrTiO 3 (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unlike crystalline LAO, amorphous Al 2 O 3 is nonpolar, indicating that planar magnetism at an oxide interface is possible without the strong internal electric fields generated within the polarization catastrophe model. We discuss our results in the context of current theoretical efforts to explain magnetism in crystalline LAO/STO.

36 MATERIALS SCIENCE↗
DOE OSTI2019

High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing

Understanding the local atomic order in amorphous thin film coatings and how it relates to macroscopic performance factors, such as mechanical loss, provides an important path towards enabling the accelerated discovery and development of improved coatings. High precision x-ray scattering measurements of thin films of amorphous zirconia-doped tantala (ZrO 2 -Ta 2 O 5 ) show systematic changes in intermediate range order (IRO) as a function of postdeposition heat treatment (annealing). Atomic modeling captures and explains these changes, and shows that the material has building blocks of metal-centered polyhedra and the effect of annealing is to alter the connections between the polyhedra. The observed changes in IRO are associated with a shift in the ratio of corner-sharing to edge-sharing polyhedra. These changes correlate with changes in mechanical loss upon annealing, and suggest that the mechanical loss can be reduced by developing a material with a designed ratio of corner-sharing to edge-sharing polyhedra.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of In Situ Brouwer Analysis

The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300 degrees C. The results yielded a power law dependence of conductivity (s) versus pOinline image of ~-1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

14 SOLAR ENERGY↗
DOE OSTI2015

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing V{sub s} for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CN{sub x} films produced by MFMS and DCMS at V{sub s} = 100 and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 × 10{sup −5} mm{sup 3}/Nm. While all CN{sub x} films exhibit low friction, wear depends strongly on the structural and mechanical characteristics of the films. The MFMS mode is best suited for the production of hard CN{sub x} films, although high compressive stresses challenge the application on steel substrates. Films grown in HiPIMS mode provide adequate adhesion due to low residual stress values, at the expense of lower film hardness. Thus, a relatively wide mechanical property envelope is presented for CN{sub x} films, which is relevant for the optimization of CN{sub x} film properties intended to be applied as low friction and wear resistant coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Amorphous sulfide heterostructure precursors prepared by radio frequency sputtering

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing such amorphous sulfide heterostructure precursors is a necessary first step toward this goal. Here, deposition of thin-film amorphous precursors for layered sulfide heterostructures by RF sputtering is presented on the example of SnS-MoS 2 . Here, a calibration process specific to the mechanisms of RF sputtering from sulfide and disulfide compound targets is established. Precursor film structure and composition are confirmed via x-ray reflectivity and Rutherford backscattering measurements. Local nanostructure and composition are also examined by electron microscopy and electron energy loss spectroscopy.

14 SOLAR ENERGY↗
DOE OSTI2026

Optical functions of crystalline and amorphous TeO2

The optical functions of crystalline paratellurite (α-TeO2) and amorphous TeO2 were determined using several optical techniques: (1) standard spectroscopic two-modulator generalized ellipsometry (2-MGE) of paratellurite (200–850 nm, 6.2–1.46 eV), (2) near-normal-incidence two-modulator generalized ellipsometry microscopy (2-MGEM) of paratellurite (577 nm, 2.15 eV), (3) Mueller matrix transmission of paratellurite (320–798 nm, 3.87–1.55 eV), and (4) polarized transmission of paratellurite (323.6–334.3 nm, 3.83–3.71 eV). The 2-MGE measurements yielded highly accurate values of the dielectric functions and error estimates from 1.46 to 6.2 eV for both paratellurite and amorphous TeO2, whereas the polarization-dependent transmission yielded more accurate values of the absorption coefficient below the band edge of paratellurite. The 2-MGEM measured the diattenuation of paratellurite, which is related to the birefringence. Mueller matrix transmission measurements of paratellurite of a (001) cut crystal as a function of angle of incidence were used to determine both the birefringence and the rotary power as a function of photon energy.

Jellison Jr, Gerald [ORNL]↗
DOE OSTI2013

A field-shaping multi-well avalanche detector for direct conversion amorphous selenium

Purpose: A practical detector structure is proposed to achieve stable avalanche multiplication gain in direct-conversion amorphous selenium radiation detectors. Methods: The detector structure is referred to as a field-shaping multi-well avalanche detector. Stable avalanche multiplication gain is achieved by eliminating field hot spots using high-density avalanche wells with insulated walls and field-shaping inside each well. Results: The authors demonstrate the impact of high-density insulated wells and field-shaping to eliminate the formation of both field hot spots in the avalanche region and high fields at the metal-semiconductor interface. Results show a semi-Gaussian field distribution inside each well using the field-shaping electrodes, and the electric field at the metal-semiconductor interface can be one order-of-magnitude lower than the peak value where avalanche occurs. Conclusions: This is the first attempt to design a practical direct-conversion amorphous selenium detector with avalanche gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗