Dynamic current-voltage characteristics of a megawatt MPD-arc thruster
Dynamic I-V characteristics of megawatt pulsed MPD-ARC plasma thruster under various axial magnetic fields given for Ar and hydrogen propellants
Michels, C. J.↗
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Nonlinear voltage-current relationship and/or intermodulation product amplitudes by measuring harmonics
Sinusoidal signal harmonics measurement to determine nonlinear resistance junction I-V equation, discussing applications to circuit analysis
Stafford, J. M.↗
Saturable-reactor motor starter reduces line voltage fluctuations
Saturable reactor starter uses back electromotive force /emf/ generated by large motors /18,650 to 596,800 watts/ to limit and control the starting current.
Currie, N. G.↗
Voltage-controlled oscillator
Oscillator generates symmetrical triangular waveform when inverting and noninverting inputs are equal. Oscillator portion of circuit has integrated circuit, high-performance operational amplifier wired as differential integrator, and two silicon controlled rectifiers.
Durand, J. L.↗
Determination of nonlinear resistance voltage-current relationships by measuring harmonics
Test configuration measures harmonic signal amplitudes generated in nonlinear resistance. Vacuum-type voltmeter measures low frequency sinusoidal input signal amplitude and wave-analyzer measures amplitude of harmonic signals generated in junction. Input signal harmonics amplitude must not exceed that of harmonics generated in nonlinear resistance.
Stafford, J. M.↗
Precision calibration and reference voltage source for data acquisition systems
Hybrid integrated circuit operational amplifiers, which have inherent characteristics of low quiescent power dissipation and extended operational lifetime with high reliability, are source for digital systems. Amplifiers are coupled to Zener reference diode in current control and buffer configuration.
Source record↗
Programmed multiplexing system simultaneously monitors several voltages
System consists of digital voltmeter with binary coded decimal output, programmer, multiplexer, and two to six gated digital displays. Maximum number of circuits monitored is determined by digital voltmeter, rate of change of parameter being measured and complexity of multiplexer design.
Wright, L. S.↗
Junction capacitance as a function of voltage for diffused p-n diodes with exponential doping gradients
Capacitance calculation for diffused p-n junction with exponential doping gradients
Been, J. F.↗
Research on low voltage electroluminescent devices with storage, phase 3 Final technical report
Production and optical properties of zinc selenide aluminum arsenide heterojunction and platinum zinc selenide Schottky junction
Hanlet, J. M.↗
Multivibrator circuit with means to prevent false triggering from supply voltage fluctuations Patent
One shot multivibrator circuit for producing long duration output pulses
Schaffer, G. L.↗
Dynamic voltage-current characteristics of a megawatt MPD-ARC thruster
Dynamic I-V characteristics of megawatt pulsed MPD-arc plasma thrustor under various axial magnetic fields given for Ar and hydrogen propellants
Michels, C. J.↗
Voltage-Tunable Parallel-T Filter for Remote Operation
Filter is devised by using insulated-gate field-effect transistors for remote control. Transistors are P-channel devices that operate in enhancement mode and are commercially available.
Brantner, R. E.↗
High voltage protection network
Circuit protects technical personnel and test equipment from hazardous currents conducted through safety barriers and into data acquisition equipment. Network isolates energy source, restricts arcing to remote area, and dissipates harmlessly residual energy transient.
Cambra, J. M.↗
Voltage-programed control of turboalternator load
A power source and load-control concept was designed and tested for use with a Brayton cycle turboalternator. The concept provides power that adjusts to a range of loads while controlling alternator speed and isolating load-switching transients. The concept is also applicable to power-generating sources other than the Brayton cycle.
Young, R. N.↗
Low voltage 30cm ion thruster
The construction of an ion thruster module (including thruster, power conditioning, and control system) capable of operating for 10,000 hours over a five to one range at an effective specific impulse of approximately 2800 seconds is discussed. The several interrelated tasks involved in the construction of the engine are described. Performance tests of the engine and the effects of various modifications are reported. It was demonstrated that thruster performance and stability were not materially affected by reasonable changes from the nominal operating point.
Source record↗
Regulated dc-to-dc converter for voltage step-up or step-down with input-output isolation.
A dc-to-dc regulated-converter circuit employing duty-cycle control with variable on and variable off time has been presented. A unique feature of this converter is the method by which the bistable-comparator output controls the duty cycle of the power switching transistor through the action of the encoder. The utilization of minor-loop flux excursions of a saturable-core transformer in the encoder makes it feasible to extend the converter switching frequency considerably higher than would normally be possible. With this converter circuit, high and very-high frequency converter operations were explored.
Feng, S. Y. M.↗
Ionizing potential waves and high-voltage breakdown streamers.
The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.
Albright, N. W.↗
Silicon switching transistor with high power and low saturation voltage
Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.
Stonebraker, E.↗