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At least 955 records · Page 53

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗

A Computationally Improved Heuristic Algorithm for Transmission Switching Using Line Flow Thresholds for Load Shed Reduction

We present a computationally improved heuristic algorithm for transmission switching (TS) to recover load shed. Research from the past showed that changing power system topology may control power flows and remove line congestion. Hence, TS may reduce the required load shed. One of the main challenges is to find a potential TS candidate in a suitable time. Here, we propose a novel heuristic method that is capable of finding the potential TS candidate faster than existing algorithms in literature. The proposed method is compatible with both the AC and DC optimal power flows (OPF). Three metrics are used to compare the proposed algorithm with the state-of-the-art from literature to show the speedup and accuracy achieved. The proposed method is implemented on the IEEE 30-bus system, PEGASE 89-bus system, IEEE 118-bus system, and Polish 2383- bus system. The results on the large-scale Polish 2383-bus system shows that the proposed algorithm is scalable to large real-world systems. Parallel computing is implemented to further improve the computational performance of the proposed algorithm.

24 POWER TRANSMISSION AND DISTRIBUTION↗