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At least 955 records · Page 53

New Measurements to Resolve Discrepancies in Evaluated Model Parameters of 181 Ta

To resolve discrepancies in evaluated cross sections among major nuclear data libraries, energy-differential neutron transmission and radiative capture yield of 181 Ta were measured from 0.15 to 100 keV using multiple sample thicknesses. The new measurements provide resolution such that the resolved resonance region (RRR) can be evaluated up to at least 2.5 keV and the unresolved resonance region can be evaluated up to at least 100 keV. The transmission and capture yield measurements were modeled using resonance parameters from three major libraries to assess the predictive capability of each. It was found that JENDL-5.0 performed best in the RRR. Because of the poor performance of the U.S. ENDF/B evaluation, it is recommended that ENDF/B be reevaluated for 181 Ta.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Structural stability, elemental ordering, and transport properties of layered ScTaN 2

Ternary transition metal (TM) nitrides have gained significant attention in thin film research due to their promising properties for a broad range of applications. Particularly, some of the ternary TM nitrides have been predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Unfortunately, synthesis of TM ternary nitride films by physical vapor deposition often favors disordered 3D structures rather than the predicted 2D-like layered structure. In this study, we investigate the structural interplay in the Sc-Ta-N ternary system using a combinatorial approach. Combinatorial libraries S⁢c 𝑥 ⁢T⁢a 1−𝑥 ⁢N are synthesized following a two-step method: First, deposit film precursors by cosputtering and then process the resulting 3D-structured samples with rapid thermal annealing. Synchrotron grazing-incidence wide-angle x-ray scattering on films annealed at 1200 ⁢°⁢C for 20 min leads to the nucleation of ScTaN 2 layered structure (𝑃⁢6 3 /𝑚⁢𝑚⁢𝑐) near stoichiometry. We find that the layered structure can accommodate large off-stoichiometry in the Ta-rich region (𝑥 < 0.5), facilitated by the alloying with quasi-isostructural Ta 5 ⁢N 6 compound that exists on a composition tie line at 𝑥 = 0. While focusing on ScTaN 2 , we estimate the long-range order parameter in near-stoichiometric films to be 0.86, corresponding to a fraction of Sc/Ta antisites of 7%. Transport measurements on ScTaN 2 reveal a nearly temperature-independent high carrier density (10 21 c⁢m −3 ), suggesting a heavily doped semiconductor or semimetallic character, consistent with a small positive Seebeck coefficient of +19 µV/K. The carrier mobility at 2 K is relatively small (9.5c⁢m 2 V −1 s −1 ) and the residual-resistivity ratio is minor, suggesting that electrical conduction is dominated by defects or disorder. Measured magnetoresistance suggests possible weak antilocalization at 2 K. This paper highlights the interplay between ScTaN 2 and Ta 5 ⁢N 6 crystal structures in stabilizing layered materials, emphasizes the importance of cation order/disorder for potential tunable alloys, and suggests that ScTaN 2 is a promising platform for exploring electronic properties.

36 MATERIALS SCIENCE↗

Ta–Zr carbides: Synthesis advances via carbothermal reduction and defect evolution observed through transmission electron microscopy ion irradiation

The thermodynamic stability of six distinct compositions within the Zr—Ta—C ternary system is investigated in this study, marking the first report of their synthesis through carbothermic reduction in vacuum. A prolonged annealing process at 2200°C enabled high densification and phase equilibrium. Detailed phase identification and microstructural characterization through microscopy and X-ray diffraction techniques revealed clear compositional trends and stable phase formations. Two compositions ((Ta 0.2 Zr 0.8 )C 0.6 and (Ta 0.5 Zr 0.5 )C 1 ) were selected for ion irradiation experiments using 200 keV Kr + at 600°C—representing the first-ever irradiation study on the Zr—Ta—C system. The findings indicated defect accumulation and nanoscale cavity formation without any evidence of amorphization, highlighting the system's structural stability under irradiation. Together, the synthesis and irradiation results provide a basis for further investigation of the system and suggest its relevance for applications under extreme environments.

36 MATERIALS SCIENCE↗

Overdriven Shocks: Recapturing a Lost Capability

Wallace’s theory for overdriven shocks in solids provides a theoretical framework for the strength of materials in the strong shock regime at strain rates unobtainable by current experimental means. Using irreversible thermodynamics, this theory incorporates heat and plastic flow as dissipative mechanisms under shock conditions allowing for the calculation of properties such as deviatoric stresses, plastic strains, and plastic strain rates. Though the theory is over four decades old, it has been used to calculate the strength behavior of only a small handful of metals. In this work, we have recaptured the ability to conduct this analysis, and two crucial aspects of the overdriven theory will be discussed: 1) the modeling assumptions that comprise this theoretical approach and 2) what information is needed to calculate the strength behavior for new materials.

36 MATERIALS SCIENCE↗

The Modified Void Nucleation and Growth Model (MNAG) for Damage Evolution in BCC Ta

A void coalescence term was proposed as an addition to the original void nucleation and growth (NAG) model to accurately describe void evolution under dynamic loading. The new model, termed as modified void nucleation and growth model (MNAG model), incorporated analytic equations to explicitly account for the evolution of the void number density and the void volume fraction (damage) during void nucleation, growth, as well as the coalescence stage. The parameters in the MNAG model were fitted to molecular dynamics (MD) shock data for single-crystal and nanocrystalline Ta, and the corresponding nucleation, growth, and coalescence rates were extracted. The results suggested that void nucleation, growth, and coalescence rates were dependent on the orientation as well as grain size. Compared to other models, such as NAG, Cocks–Ashby, Tepla, and Tonks, which were only able to reproduce early or later stage damage evolution, the MNAG model was able to reproduce all stages associated with nucleation, growth, and coalescence. The MNAG model could provide the basis for hydrodynamic simulations to improve the fidelity of the damage nucleation and evolution in 3-D microstructures.

36 MATERIALS SCIENCE↗

On the Sintering Behavior of Nb2O5 and Ta2O5 Mixed Oxide Powders

A mixed oxide system consisting of Nb2O5 and Ta2O5, was subjected to annealing in air/hydrogen up to 950 °C for 1–4 h to study its sintering behavior. The thermogravimetric–differential scanning calorimetry (TGA–DSC) thermograms indicated the formation of multiple endothermic peaks at temperatures higher than 925 °C. Subsequently, a 30% Ta2O5 and 70% Nb2O5 (mol%) pellet resulted in good sintering behavior at both 900 and 950 °C. The scanning electron microscope (SEM) images corroborated these observations with necking and particle coarsening. The sintered pellets contained a 20.4 and 20.8% mixed oxide (Nb4Ta2O15) phase, along with Ta2O5 and Nb2O5, at both 900 and 950 °C, indicating the possibility of the formation of a solid solution phase. In situ high-temperature X-ray diffraction (XRD) scans also confirmed the formation of the ternary oxide phase at 6 and 19.8% at 890 and 950 °C, respectively. The Hume–Rothery rules could explain the good sintering behavior of the Ta2O5 and Nb2O5 mixed oxides. An oxide composition of 30% Ta2O5 and 70% Nb2O5 (mol%) and a sintering temperature of 950 °C appeared adequate for fabricating well-sintered oxide precursors for subsequent electrochemical polarization studies in fused salts.

36 MATERIALS SCIENCE↗

Electrical Behavior of Combinatorial Thin-Film Zr x Ta 1−x O y

Combinatorial magnetron sputtering and electrical characterization were used to systematically study the impact of compositional changes in the resistive switching of transition metal oxides, specifically the Zr x Ta 1−x O y system. Current-voltage behavior across a range of temperatures provided insights into the mechanisms that contribute to differences in the electrical conductivity of the pristine Ta 2 O 5 and ZrO 2 , and mixed Zr x Ta 1−x O y devices. The underlying conductive mechanism was found to be a mixture of charge trapping and ionic motion, where charge trapping/emission dictated the short-term cycling behavior while ion motion contributed to changes in the conduction with increased cycling number. ToF-SIMS was used to identify the origin of the “wake-up” behavior of the devices, revealing an ionic motion contribution. This understanding of how cation concentration affects conduction in mixed valence systems helps provide a foundation for a new approach toward manipulating resistive switching in these active layer materials.

36 MATERIALS SCIENCE↗

The effect of thermal cycling on the structure and properties of a Co, Cr, Ni-TaC directionally solidified eutectic composite

A Co, Cr, Ni-TaC directionally solidified eutectic composite was subjected to thermal fatigue between 427-1093°C. The material suffered degradation in microstructure and elevated temperature mechanical properties. The loss in properties varied with the maximum cycling temperature and number of cycles. This behavior is attributed to the increasing solubility of the TaC in the matrix with temperature from 0.4% at room temperature to 2.2% at 1200°C. During the thermal cycling, the TaC is subjected to solution and reprecipitation which form serrations on the fibers since the easy growth planes of the TaC are not coincident with the fiber faces exposed to the matrix.

Composites↗