Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “semiconducting”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

949 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Models and Measurements Quantify Photon Recycling, Charge-Carrier Diffusion and Photon Scattering Contributions to Photoluminescence in InP Nanowire Arrays

Nanowire arrays present many unique advantages for solar-to-chemical energy conversion. One possible advantage is that photon recycling between neighboring nanowires has the potential to increase solar energy conversion efficiencies. Here, in this work, we explore three underlying mechanisms of optical and electronic coupling between neighboring nanowires─incident photon scattering, photon recycling, and charge-carrier transport from the photoexcited nanowire to the neighboring nanowire via the underlying substrate─using single nanowire-level microscopy and spectroscopy measurements. We present a comprehensive analysis of light absorption and emission of a single nanowire at open circuit, and subsequent re-absorption and re-emission by a neighboring nanowire. We developed a novel correlated single nanowire microspectroscopy and widefield imaging methodology to spatially resolve photon communication pathways between neighboring nanowires and selectively image re-emitted and reflected photons. We developed unique multiphysics models to couple wave optics and semiconductor photophysics to especially isolate contributions from photon recycling and electronic transport to photon emission from neighboring nanowires. By systematically varying the morphologies of the nanowires modeled, we identified pathways to maximize photon recycling between neighboring nanowires. We concluded that the measured photoluminescence is more strongly influenced by the diffusion of charge carriers as compared to photon recycling in materials with moderate-to-large charge-carrier mobilities (>10 cm 2 V –1 s –1 ), and that photon recycling dictates photoluminescence intensity only when the charge-carrier mobility is low (<1 cm 2 V –1 s –1 ). The experimental and simulation platforms developed herein for photon management strategies can be leveraged by the semiconductor photocatalysis community to enhance solar-to-chemical conversion efficiencies in semiconductor nanowire arrays.

25 ENERGY STORAGE↗
DOE OSTI2020

Crack-Free Silicon Monoxide as Anodes for Lithium-Ion Batteries

The volume expansion of Si and SiO particles was investigated using a single-particle battery assembled with a focused ion beam and scanning electron microscopy (FIB-SEM) system. Single Si and SiO particles were galvanostatically charged and discharged as in real batteries. Microstructural changes of the particles were monitored in situ using FIB-SEM from two different angles. The results revealed that the volume expansion of micrometer size particle SiO was not only much smaller than that of Si, but it also kept its original shape with no sign of cracks. Additionally, this isotropic mechanical property of a SiO particle can be attributed to its microstructure: nanosized Si domains mixed with SiO 2 domains. The nanosized Si domains can mitigate the anisotropic swelling caused by the orientation-dependent lithium-ion insertion; the surrounding SiO 2 domains can act as a buffer to further constrain the localized anisotropic swelling.

25 ENERGY STORAGE↗
DOE OSTI2026

TiO 2 Nanoparticles Enabling Photocatalytic Desulfurization for C–C Coupling Reaction Using Visible Light

We uncover a surface-mediated mechanism for visible-light-driven photocatalytic desulfurization of thiols on titanium dioxide (TiO 2 ) nanoparticles under LED illumination (>420 nm). Combined diffuse reflectance, infrared, and cryogenic electron paramagnetic resonance spectroscopy verify the formation of a surface thiol–Ti charge-transfer complex that introduces visible-light absorption into an otherwise UV-active reaction system. Selective photoexcitation of this surface complex drives interfacial charge transfer, directly activating the adsorbed thiol and inducing C–S bond scission without the band gap excitation of TiO 2 . The resulting carbon-centered radical intermediates are intercepted by styrene to form C–C coupling products. These results uncover a distinct surface-mediated photocatalytic mechanism in which charge-transfer complex formation governs both light absorption and chemical activation, providing a mechanistic framework for extending visible-light reactivity to wide-bandgap metal oxide photocatalysts.

addition of carbon radical to vinyl groups↗
DOE OSTI2022

Room temperature corrosion behaviour of plastically deformed AISI 304 stainless steel by friction stir welding in neutral and acidified chloride solutions

Severe plastic deformation of 304L stainless steel plate was carried out by friction stirring under an isothermal tool temperature at 825°C. The friction stirred zone showed extensive grain refinement, high fraction of low angle grain boundaries due to dislocation rearrangement, Σ3 and Σ9 special grain boundaries and discrete Fe–Cr–Mn-rich particles. Electrochemical polarisation measurements were done on the base metal (BM) and friction stir welded (FSW) specimens in the neutral and acidified 3.5% NaCl solutions. The BM showed marginally better pitting resistance in the neutral chloride solution than the FSW because of a larger fraction of special grain boundaries, and larger grain size. Whereas in acidified 3.5% NaCl solution, the FSW showed better corrosion resistance than the BM. Furthermore, the surface film of the FSW had a lower impedance and a lower defect concentration than the BM indicating higher diffusivity of point defects in the FSW.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The underappreciated lone pair in halide perovskites underpins their unusual properties

The presence of 6s 2 (5s 2 ) lone-pair electrons on the B-site Pb (Sn) in all-inorganic and hybrid halide ABX 3 perovskites distinguishes these materials from the familiar tetrahedral semiconductors traditionally employed in optoelectronics and is key to many of their appealing properties. These electrons are stereochemically active, albeit often in a hidden fashion, resulting in unusual and highly anharmonic lattice dynamics that are linked to many of the special optoelectronic properties displayed by this material class. This article describes the connections between this atypical electronic configuration and the electronic structure and lattice dynamics of these compounds. We illustrate how the lone pair leads to favorable bandwidths and band alignments, mobile holes, large ionic dielectric response, large positive thermal expansion, and even possibly defect-tolerant electronic transport. Taken together, the evidence suggests that other high-performing semiconductors may be found among compounds with lone-pair-bearing cations in high symmetry environments and a high degree of connectivity between atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Analysis of the dependence of critical electric field on semiconductor bandgap

Abstract Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field ( $${\mathcal{E}}_{\text{crit}}$$ E crit ) at which the material breaks down and bandgap ( E g ) . The relationship is often used to gauge tradeoffs of emerging materials whose properties haven’t yet been determined. Unfortunately, the reported dependencies of $${\mathcal{E}}_{\text{crit}}$$ E crit on E g cover a surprisingly wide range in the literature. Moreover, $${\mathcal{E}}_{\text{crit}}$$ E crit is a function of material doping. Further, discrepancies arise in $${\mathcal{E}}_{\text{crit}}$$ E crit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence $${\mathcal{E}}_{\text{crit}}$$ E crit ∝ E g 1.83 best fits the most reliable and newest data for both direct and indirect semiconductors. Graphical abstract

36 MATERIALS SCIENCE↗
DOE OSTI2022

Simulation and characterization of cation disorder in ZnGeP 2

New optoelectronic materials are needed for improving the efficiency and reliability of devices such as solar cells. Cation ordering presents one means of controlling optoelectronic properties while introducing potential to also diversify the mineral constituents of electronic devices; however, the mechanisms of ordering are not yet well understood. To better understand cation ordering in a system integratable with current devices, we assess short- and long-range order parameters of ZnGeP 2 , a material closely lattice matched to Si. Structures are simulated using cluster-based Monte Carlo and first-principles calculations to compare structural distortions, periodicity, and local coordination environments in ZnGeP 2 to experimental data both from the literature and presented here. Comparing order parameters, we relate the transition in order parameters of ZnGeP 2 to that of ZnGeP 2 , discuss the reduction of band gaps with disorder, and show that traditional structural characterization alone is insufficient for understanding order in ZnGeP 2 .

14 SOLAR ENERGY↗
DOE OSTI2025

Nuclear spin engineering for quantum information science

Semiconductors are the backbone of modern technology, garnering decades of investment in high-quality materials and devices. Electron spin systems in semiconductors, including atomic defects and quantum dots, have been demonstrated in the last two decades to host quantum coherent spin qubits, often with coherent spin–photon interfaces and proximal nuclear spins. These systems are at the center of developing quantum technology. However, new material challenges arise when considering the isotopic composition of host and qubit systems. The isotopic composition governs the nature and concentration of nuclear spins, which naturally occur in leading host materials. These spins generate magnetic noise—detrimental to qubit coherence—but also show promise as local quantum memories and processors, necessitating careful engineering dependent on the targeted application. Reviewing recent experimental and theoretical progress toward understanding local nuclear spin environments in semiconductors, we show this aspect of material engineering as critical to quantum information technology.

Defects↗
DOE OSTI2022

Electron dynamics in extended systems within real-time time-dependent density-functional theory

Due to a beneficial balance of computational cost and accuracy, real-time time-dependent density-functional theory has emerged as a promising first-principles framework to describe electron real-time dynamics. Here we discuss recent implementations around this approach, in particular in the context of complex, extended systems. Results include an analysis of the computational cost associated with numerical propagation and when using absorbing boundary conditions. Here we extensively explore the shortcomings for describing electron–electron scattering in real time and compare to many-body perturbation theory. Modern improvements of the description of exchange and correlation are reviewed. In this work, we specifically focus on the Qb@ll code, which we have mainly used for these types of simulations over the last years, and we conclude by pointing to further progress needed going forward.

2D materials↗
DOE OSTI2026

Co-Design of Charge Transport Superhighways to Connect Catalytic Sites in Soft Photoelectrochemical Systems

Efficient photon-to-electron-to-molecule conversion requires multi-length scale control over charge transport pathways, where electronic charges are delivered to catalytic sites under high mass transport flux. A fundamental question is how can we co-design charge transport pathways to promote efficient charge transfer to/from catalytic sites in complex three-dimensional architectures? Soft conducting polymer systems offer exceptional promise to provide three-dimensional charge transport networks, where electrolyte (ion and solvent) can interdiffuse to promote long-lived charge carriers and the molecular nature allows for strategic synthetic design of catalytic sites. Herein we combine theoretical and experimental approaches to investigate the earliest stages of photoelectrochemical deposition of near-surface catalytic sites (Pt) on soft bulk heterojunction polymeric semiconductors composed of a prototype donor (PTB7-Th) and a prototype acceptor (N2200) as a model system towards better understanding molecular catalyst-polymer site interactions. We focus initially on photoelectrochemical deposition of low Pt loadings, nanoparticle sizes (formed by progressive nucleation) below 20 nm, for both density functional theory (DFT) modeling studies and for spectroscopic characterization using surface-sensitive X-ray and UV-photoemission (XPS/UPS). DFT modeling of “n-type” N2200 slabs reveal for the first time that sulfur atoms in the thiophene units serve as the lowest-energy adsorption sites for single Pt atoms, while larger Pt clusters engage more complexly with both thiophene and naphthalene diimide (NDI) core sites. Changes in chemical composition observed by X-ray photoelectron spectroscopy (XPS) support the DFT predictions, and the angle-resolved measurements reveal that Pt nucleation initiates at subsurface sites which appear to be localized active domains that promote charge transport/transfer and enable vertical growth toward the surface. These results suggest that light-activated Pt nanoparticle deposition decorates energetically distinct sites, where photoactivity is dictated by the local energetics of those sites, and the fact that they represent the termini of charge transport “super-highways” – a small percentage of the total volume of the donor/acceptor polymeric active layer which carries most of the photocurrent generated during both Pt deposition and photoelectrochemical HER. We posit that these initial studies provide a foundational strategy for design of catalytic sites in the near surface regions of complex polymeric materials and advancing soft semiconductor-based photoelectrochemical systems. Achieving a nanometer-scale understanding of catalyst deposition and the impact of local composition and energetics on that placement, should ultimately provide the design guidelines (co-design) for a broad array of catalysts at sites that optimize that efficiency and maximize platform durability.

14 SOLAR ENERGY↗
NASA NTRS1998

Some Properties of Re(sub 2)Te(sub 5) based Materials

One of the new approaches for developing thermoelectric materials with superior figures of merit is to look at materials which can be referred to as 'rattling' semiconductors.

coefficient values thermal conductivity electrical↗
NASA NTRS2005

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗
DOE OSTI2021

Accelerated Beta Radiation Aging of Interlayer Titanium Nitride in Gallium Nitride Contacts

Research conducted under the Laboratory Directed Research and Development Program at Pacific Northwest National Laboratory, a multiprogram national laboratory operated by Battelle for the U.S. Department of Energy. An NNSS author co-authored this paper, and portions of this work were supported by the Mission Support and Test Services, LLC, under Contract No. DE-NA0003624 with the U.S. Department of Energy, National Nuclear Security Administration, NA-10 USDOE NA Office of Defense Programs (NA-10). PNNL-SA-163618 Currently, there is no good way to determine the influence of radiation on the aging of betavoltaic electrical contacts. This work tested a method to accelerate the aging of the contacts inside a betavoltaic by enhancing energy deposition within the interfacial region of interest. An electrical contact of gold-titanium on gallium nitride was aged by exposure to tritium betas and electrons in a beamline. The interface stoichiometry was compared to the electrical performance of the contact. The method to age the betavoltaic component could help predict the lifetime performance of the internal electrical contacts and provide assurance of deployment reliability.

36 MATERIALS SCIENCE↗