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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al{sub 0.3}Ga{sub 0.7}As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Interband magneto-spectroscopy in InSb square and parabolic quantum wells

We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Quantum mechanical calculations of state-to-state cross sections and rate constants for the F + DCl → Cl + DF reaction

We present accurate state-to-state quantum wave packet calculations of integral cross sections and rate constants for the title reaction. Calculations are carried out on the best available ground 1{sup 2}A′ global adiabatic potential energy surface of Deskevich et al. [J. Chem. Phys. 124, 224303 (2006)]. Converged state-to-state reaction cross sections have been calculated for collision energies up to 0.5 eV and different initial rotational and vibrational excitations, DCl(v = 0, j = 0 − 1; v = 1, j = 0). Also, initial-state resolved rate constants of the title reaction have been calculated in a temperature range of 100-400 K. It is found that the initial rotational excitation of the DCl molecule does not enhance reactivity, in contract to the reaction with the isotopologue HCl in which initial rotational excitation produces an important enhancement. These differences between the isotopologue reactions are analyzed in detail and attributed to the presence of resonances for HCl(v = 0, j), absent in the case of DCl(v = 0, j). For vibrational excited DCl(v = 1, j), however, the reaction cross section increases noticeably, what is also explained by another resonance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Controlled synthesis of Eu{sup 2+} and Eu{sup 3+} doped ZnS quantum dots and their photovoltaic and magnetic properties

Eu-doped ZnS quantum dots (QDs) have been synthesized by wet-chemical method and found to form in zinc blende (cubic) structure. Both Eu{sup 2+} and Eu{sup 3+} doped ZnS can be controllably synthesized. The Eu{sup 2+} doped ZnS QDs show broad photoluminescence emission peak around 512 nm, which is from the Eu{sup 2+} intra-ion transition of 4f{sup 6}d{sup 1} – 4f{sup 7}, while the Eu{sup 3+} doped samples exhibit narrow emission lines characteristic of transitions between the 4f levels. The investigation of the magnetic properties shows that the Eu{sup 3+} doped samples exhibit signs of ferromagnetism, on the other hand, Eu{sup 2+} doped samples are paramagnetic of Curie-Weiss type. The incident photon to electron conversion efficiency is increased with the Eu doping, which suggests the QD solar cell efficiency can be enhanced by Eu doping due to widened absorption windows. This is an attractive approach to utilize benign and environmentally friendly wide band gap ZnS QDs in solar cell technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8 Ge 0.2 quantum well hetero-structure

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8 Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Compact quantum dot surface modification to enable emergent behaviors in quantum dot-DNA composites

Quantum dot (QD) biological imaging and sensing applications often require surface modification with single-stranded deoxyribonucleic acid (ssDNA) oligonucleotides. Furthermore, ssDNA conjugation can be leveraged for precision QD templating via higher-order DNA nanostructures to exploit emergent behaviors in photonic applications. Use of ssDNA-QDs across these platforms requires compact, controlled conjugation that engenders QD stability over a wide pH range and in solutions of high ionic strength. However, cur-rent ssDNA-QD conjugation approaches suffer from limitations, such as the requirement for thick coatings, low control over ssDNA labeling density, requirement of large amounts of ssDNA, or low colloidal or photostability, restraining implementation in many applications. Here, we combine thin, multidentate, phytochelatin-3 (PC3) QD passivation techniques with strain-promoted copper-free alkyne-azide click chemistry to yield functional ssDNA-QDs with high stability. This process was broadly applicable across QD sizes (i.e.,λ em = 540, 560, 600 nm), ssDNA lengths (i.e., 10–16 base pairs, bps), and sequences (poly thymine, mixed bps). The resulting compacts sDNA-QDs displayed a fluorescence quenching efficiency of up to 89% by hybridization with complementary ssDNA-AuNPs. Further-more, ssDNA-QDs were successfully incorporated with higher-order DNA origami nanostructure templates. Finally, this approach, combining PC3 passivation with click chemistry, generates ssDNA-PC3-QDs that enable emergent QD properties in DNA-based devices and applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Dimension and dimensional reduction in quantum gravity

A number of very different approaches to quantum gravity contain a common thread, a hint that spacetime at very short distances becomes effectively two dimensional. Here, I review this evidence, starting with a discussion of the physical meaning of 'dimension' and concluding with some speculative ideas of what dimensional reduction might mean for physics.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Quantum ${{\mathbb{F}}_{{\rm un}}}$: the q = 1 limit of Galois field quantum mechanics, projective geometry and the field with one element

We argue here that the q = 1 limit of Galois field quantum mechanics, which was constructed on a vector space over the Galois field ${{\mathbb{F}}_{q}}=GF(q)$, corresponds to its 'classical limit', where superposition of states is disallowed. Furthermore, the limit preserves the projective geometry nature of the state space, and can be understood as being constructed on an appropriately defined analogue of a 'vector' space over the 'field with one element' ${{\mathbb{F}}_{1}}$.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Quantum oscillations in a bilayer with broken mirror symmetry: A minimal model for YBa 2 Cu 3 O 6 + δ

Using an exact numerical solution and semiclassical analysis, we investigate quantum oscillations (QOs) in a model of a bilayer system with an anisotropic (elliptical) electron pocket in each plane. Key features of QO experiments in the high temperature superconducting cuprate YBCO can be reproduced by such a model, in particular the pattern of oscillation frequencies (which reflect “magnetic breakdown” between the two pockets) and the polar and azimuthal angular dependence of the oscillation amplitudes. However, the requisite magnetic breakdown is possible only under the assumption that the horizontal mirror plane symmetry is spontaneously broken and that the bilayer tunneling t ⊥ is substantially renormalized from its ‘bare’ value. Lastly, under the assumption that t ⊥ = $\sim\atop{Z}_t$ $(0)\atop{⊥}$, where $\sim\atop{Z}$ is a measure of the quasiparticle weight, this suggests that $\sim\atop{Z}$ ≲ 1/20. Detailed comparisons with new YBa 2 Cu 3 O 6.58 QO data, taken over a very broad range of magnetic field, confirm specific predictions made by the breakdown scenario.

36 MATERIALS SCIENCE↗
DOE OSTI2017

In-plane electric fields and the 𝜈 = $\frac{5}{2}$ fractional quantum Hall effect in a disk geometry

The 𝜈 = $\frac{5}{2}$ fractional quantum Hall effect is of experimental and theoretical interest due to the possible non-Abelian statistics of the excitations in the electron liquid. A small voltage difference across a sample applied in experiments to probe the system is often ignored in theoretical studies due to the Galilean invariance in the thermodynamic limit. No experimental sample, however, is Galilean invariant. In this Rapid Communication, we explore the effects of the probe electric fields in a disk geometry with finite thickness. We find that weak probe fields enhance the Moore-Read Pfaffian state, but sufficiently strong electric fields destroy the incompressible state. In a disk geometry, the behavior of the system depends on the polarity of the applied radial field, which can potentially be observed in experiments using a Corbino disk configuration. Finally, our simulation also shows that the application of such a field enhances the coherence length of quasiholes propagating through the edge channels.

exact diagonalization↗