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At least 955 records · Page 53

Synthesis of Tunable SnS-TaS 2 Nanoscale Superlattices

Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties. A number of kinetically stabilized, nonepitaxial superlattices with almost limitless structural tunability have been reported in telluride and selenide chemistries but have not yet been extended to sulfides. Here, we present SnS-TaS 2 nanoscale superlattices with tunable layer architecture. Layered amorphous precursors are prepared as thin films programmed to mimic the targeted superlattice; subsequent low temperature annealing activates self-assembly into crystalline nanocomposites. We investigate structure and composition of superlattices comprised of monolayers of TaS 2 and 3–7 monolayers of SnS per repeating unit. Furthermore, a graded precursor preparation approach is introduced, allowing stabilization of superlattices with multiple stacking sequences in a single preparation. Controlled synthesis of the architecture of nanoscale superlattices is a critical path toward tuning their exotic properties and enabling integration with electronic, optical, or quantum devices.

36 MATERIALS SCIENCE↗

Etched Silicon Planar CRL Optics for the High-Energy X-ray Diffraction Beamlines 11-ID-B and 11-ID-C at the APS

We report the focusing of high-energy X-rays is most commonly achieved by commercially available compound refractive lenses (CRL), which are added together in larger structures. There is a need for high-energy X-ray beamlines to enable focusing in only one dimension down to a few micrometers to study layered materials and thin films. High-energy X-rays above 50 keV require often 100 lenses or more, therefore it is more efficient to etch the complete arrays of lenses into a monolithic substrate like a silicon wafer. Custom lens arrays were fabricated for the high-energy x-ray beamlines 11-ID-B, and 11-ID-C at the Argonne National Laboratory. The fabrication required tuning parameters of the Bosch process to optimize the etching of deep vertical sidewalls at a reasonable speed without overheating. The beamline 11-ID-B is equipped with lens arrays of 85-110 lenses for 59 keV and 190-250 lenses for 87 keV photon energy, focusing the beam vertically below 5.0 µm at the sample positions between 1600 mm to 2100 mm. 11-ID-C has received arrays of 435 lenses that focus 106 keV X-rays to a vertical height of 2.0 µm at the sample position. In both cases, the flux density gain in the focal spot is larger than a factor of 20, relative to using slits to cut the beam size. The lens setup is permanently installed and can be moved in and out of the beam during the experiment without further alignment. The lenses have enabled operando diffraction studies on interfaces in batteries and the development of pair distribution function (PDF) analysis using grazing incidence geometry.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Growth mechanisms of large, faceted crystals grown from solutions

Here, the paper describes optical techniques and methods used to study growth mechanisms and phenomena occurring on multiple faces of real bulk crystals grown from aqueous and organic solutions. Using examples of ionic KDP and molecular trans-stilbene crystals, it shows how in-situ and ex-situ surface observations can be applied to identify growth structures characteristic for the dislocation, two-dimensional (2D), and 3D cluster deposition mechanisms. Results are analyzed and applied to understanding of defects origins and methods for their elimination in practical growth of large, high optical quality crystals.

2D growth mechanism↗

Solvent-Dependent Dynamics of Cellulose Nanocrystals in Process-Relevant Flow Fields

Flow-assisted alignment of anisotropic nanoparticles is a promising route for the bottom-up assembly of advanced materials with tunable properties. While aligning processes could be optimized by controlling factors such as solvent viscosity, flow deformation, and the structure of the particles themselves, it is necessary to understand the relationship between these factors and their effect on the final orientation. In this study, we investigated the flow of surface-charged cellulose nanocrystals (CNCs) with the shape of a rigid rod dispersed in water and propylene glycol (PG) in an isotropic tactoid state. In situ scanning small-angle X-ray scattering (SAXS) and rheo-optical flow-stop experiments were used to quantify the dynamics, orientation, and structure of the assigned system at the nanometer scale. The effects of both shear and extensional flow fields were revealed in a single experiment by using a flow-focusing channel geometry, which was used as a model flow for nanomaterial assembly. Due to the higher solvent viscosity, CNCs in PG showed much slower Brownian dynamics than CNCs in water and thus could be aligned at lower deformation rates. Moreover, CNCs in PG also formed a characteristic tactoid structure but with less ordering than CNCs in water owing to weaker electrostatic interactions. The results indicate that CNCs in water stay assembled in the mesoscale structure at moderate deformation rates but are broken up at higher flow rates, enhancing rotary diffusion and leading to lower overall alignment. Albeit being a study of cellulose nanoparticles, the fundamental interplay between imposed flow fields, Brownian motion, and electrostatic interactions likely apply to many other anisotropic colloidal systems.

36 MATERIALS SCIENCE↗

Resolving length-scale-dependent transient disorder through an ultrafast phase transition

Abstract Material functionality can be strongly determined by structure extending only over nanoscale distances. The pair distribution function presents an opportunity for structural studies beyond idealized crystal models and to investigate structure over varying length scales. Applying this method with ultrafast time resolution has the potential to similarly disrupt the study of structural dynamics and phase transitions. Here we demonstrate such a measurement of CuIr 2 S 4 optically pumped from its low-temperature Ir-dimerized phase. Dimers are optically suppressed without spatial correlation, generating a structure whose level of disorder strongly depends on the length scale. The redevelopment of structural ordering over tens of picoseconds is directly tracked over both space and time as a transient state is approached. This measurement demonstrates the crucial role of local structure and disorder in non-equilibrium processes as well as the feasibility of accessing this information with state-of-the-art XFEL facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

government↗

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Two atomic layer etching (ALE) methods were studied for crystalline GaN, based on oxidation, fluorination, and ligand exchange. Etching was performed on unintentionally doped GaN grown by hydride vapor phase epitaxy. For the first step, the GaN surfaces were oxidized using either water vapor or remote O 2 -plasma exposure to produce a thin oxide layer. Removal of the surface oxide was addressed using alternating exposures of hydrogen fluoride (HF) and trimethylgallium (TMG) via fluorination and ligand exchange, respectively. Several HF and TMG super cycles were implemented to remove the surface oxide. Each ALE process was monitored in situ using multiwavelength ellipsometry. X-ray photoelectron spectroscopy was employed for the characterization of surface composition and impurity states. Additionally, the thermal and plasma-enhanced ALE methods were performed on patterned wafers and transmission electron microscopy (TEM) was used to measure the surface change. The x-ray photoelectron spectroscopy measurements indicated that F and O impurities remained on etched surfaces for both ALE processes. Ellipsometry indicated a slight reduction in thickness. TEM indicated a removal rate that was less than predicted. In conclusion, we suggest that the etch rates were reduced due to the ordered structure of the oxide formed on crystalline GaN surfaces.

36 MATERIALS SCIENCE↗

Dissimilar metal joining of Ti-6Al-4V and Inconel 625

The dissimilar joining of Ti-6Al-4V and Inconel 625 by using a suitable interlayer shows potential design flexibility by avoiding the brittle intermetallic phases from direct welding. These phases include NiTi , NiTi 2 , and Ni 3 Ti . The objective of this work is to facilitate laser welding of Ti-6Al-4V and Inconel 625 through a vanadium interlayer to form an intermetallic free, strong, and corrosion resistant joint. Vanadium was chosen based on binary phase diagram solubilities, literature, and theoretical CalPhaD calculations in PanDat. Laser welding was systematically explored from based on beam mode, offset, power, and scan speed. Varied parameters include laser power from 325 to 650 watts, laser scan speed from 80 to 160 in/min, and beam offset up to a ¼ of the beam diameter. Parameters were chosen based on previous dissimilar joining research and those found in the literature. Metallography, including optical and scanning electron microscopy, was used to analyze the weld chemical composition, grain structure, and defects through both the fusion and heat affected zones. The results and discussion will examine the relationship between process parameters, microstructure, and observed weld defects. Our findings will not only assess the weldability of vanadium and Inconel 625 but also establish a transferable framework for studying other dissimilar material combinations, providing valuable insights for future research in this field.

36 MATERIALS SCIENCE↗

Optical vibrational spectra and proposed crystal structure of ε-UO 3

ε-UO 3 is an exotic polymorph in the uranium trioxide system with an undetermined crystal structure and limited optical vibrational spectroscopic data. To improve understanding of this compound, we synthesize and investigate the crystal structure and optical vibrational spectra of ε-UO 3 . Infrared spectra collected for ε-UO 3 are in good agreement with previously published results, and our studies extend the available data into the low-energy (600–100 cm –1 ) regime. For the first time, Raman spectra are presented for ε-UO 3 using both 785 and 532 nm excitation wavelengths. Previous reports suggest an impurity phase may be present in ε-UO 3 produced by calcination of U 3 O 8 ; however, spectral center-of-mass calculations, principal component analyses, and Raman spectroscopic mapping employed to investigate this possibility indicate that the product of U 3 O 8 calcined in O 3 (g) in this work is likely phase-pure. A possible novel structure solution for ε-UO 3 is determined via Rietveld refinement of powder X-ray diffraction data and is triclinic, P-1, with a = 4.01 Å, b = 3.85 Å, c = 4.18 Å, and α = 98.26°, β = 90.41°, γ = 120.46° (R wp = 8.30%). The asymmetric unit of ε-UO 3 consists of U(VI) in hexagonal bipyramidal coordination with displaced equatorial oxygen. Further analysis reveals that the structure of ε-UO3 is best described by a 2 × 1 × 2 supercell structure in P-1 with a = 8.03 Å, b = 3.86 Å, c = 8.37 Å with α = 98.26°, β = 90.41°, and γ = 120.46°, although a higher-symmetry structure is possible. Optical vibrational spectroscopic and structural measurements of ε-UO 3 presented here furthers our understanding of this complex uranium oxide and clarifies the origin of reported structural similarity to U 3 O 8 .

-UO3↗

Radically Tunable n-Type Organic Semiconductor via Polymorph Control

Polymorphism has emerged as an important design consideration in organic semiconductors (OSCs). Previously, in many OSCs, even small changes in molecular stacking can cause drastic changes to the optical and electronic properties. However, investigation into n-type semiconductors has significantly lagged behind their p-type counterparts. In this work, we present the prolific polymorphism of 2-dimensional quinoidal terthiophene (2DQTT-o-B) and systematically investigate each of 5 polymorphs, 3 of which have been previously unreported. Grazing incidence X-ray diffraction provided a key method to understanding the structure of each polymorph. Via the polymorphic transitions mapped, we tuned the electron mobility by 5 orders of magnitude, from 5.63 × 10 –5 to 0.22 cm 2 V –1 s –1 . These were accompanied by modifications to the optical properties, namely we observed substantial differences in the refractive index noted by intensity differences under polarized optical microscopy and a large shift in optical band gap from 1.18 eV up to 1.40 eV. Lastly, we suggest that changes to these properties may be related to the unique quinoidal to aromatic transition observed in quinoidal molecules.

36 MATERIALS SCIENCE↗

MgZnO High‐Voltage Transparent Thin‐Film Transistors Built on Glass

Recently, there has been increasing interest in building‐integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large‐area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high‐voltage transparent thin‐film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide‐bandgap oxide‐based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO‐based materials with different functions for two roles: a semiconductor Mg 0.01 Zn 0.99 O (MZO) as TFT channel and Al‐doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high‐k‐stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 10 6 . The device exhibits an average optical transmittance of 81% over the visible spectrum.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Directional Assembly of Nanoparticles by DNA Shapes: Towards Designed Architectures and Functionality

In bottom–up self-assembly, DNA nanotechnology plays a vital role in the development of novel materials and promises to revolutionize nanoscale manufacturing technologies. DNA shapes exhibit many versatile characteristics, such as their addressability and programmability, which can be used for determining the organization of nanoparticles. Furthermore, the precise design of DNA tiles and origami provides a promising technique to synthesize various complex desired architectures. These nanoparticle-based structures with targeted organizations open the possibility to specific applications in sensing, optics, catalysis, among others. In this work, we review progress in the development and design of DNA shapes for the self-assembly of nanoparticles and discuss the broad range of applications for these architectures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Observation of high-pressure polymorphs in bulk silicon formed at relativistic laser intensities

Silicon polymorphs with exotic electronic and optical properties have recently attracted significant attention due to their wide range of useful band gap characteristics. They are typically formed by static high-pressure techniques, which limits the crystal structures that can be made. This constitutes a major obstacle to study these polymorphs and their incorporation into existing technology. Approaches have attempted to address this shortcoming through using dynamic conditions and chemical precursor materials. Here, we report on an approach to create unusual crystal structures deep in the bulk of a silicon crystal by irradiating it with a laser pulse at ultrarelativistic intensity of up to 7.5 × 10 19 W/ c m 2 . Laser-generated electrons with MeV energy swiftly penetrate the target with speed close to the speed of light and deposit their energy into a large volume across the whole thickness of the sample. The relativistic electron current creates, via branching propagation and ionization, high-energy-density conditions for thermodynamically nonequilibrium phase transformation paths into new crystal polymorphs. X-ray microdiffraction and synchrotron x-ray diffraction analyses indicate, along with conventional dc-Si, the presence of exotic silicon structures in the bulk of the laser intact target volume. These structures are identified as body-centered bc8-Si, rhombohedral r8-Si, hexagonal-diamond hd-Si, and the tetragonal Si-VIII, all phases of Si that have previously been made through static techniques. Additionally, simple-tetragonal st12-Si and body-centered tetragonal bt8-Si were observed along with signatures of not yet identified diffraction spots. Both st12-Si and bt8-Si have only been observed in ultrafast laser microexplosion conditions at much lower laser intensity ∼ 10 14 W/ c m 2 and within a micron-thin surface layer. The findings here are supported by direct observation of nanoparticles with high-resolution transmission electron microscopy and corresponding fast Fourier transform analysis of their interatomic distances. The presented analyses of absorbed laser energy, generation of the MeV electron current, and deposition of energy across the whole target thickness provide a solid basis for drawing the conclusion that the observed silicon polymorphs were produced because of laser-generated high-energy electrons fast-penetrating deeply into the bulk of silicon. In contrast to solid-solid transformations, the plasma-solid transitions offer a paradigm for the creation of exotic, high-energy density materials inside the bulk of the sample by using laser pulses at relativistic intensities. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Metal-Organic Frameworks: Structure, Function and Design via Hyperpolarized NMR Spectroscopy: Collaborative Proposal (Final Technical Report)

Nuclear magnetic resonance is a powerful tool to shed light on the properties of a vast range of materials but its use is affected by detection sensitivity. Throughout this work, we investigated new routes to dynamic nuclear spin polarization with an eye on applications to the study of metal-organic frameworks (MOFs). Work at the Meriles group focused on extending our understanding of the mechanisms governing the optical generation of spin order via photo-active electronic spin species and the subsequent transfer of spin polarization throughout the solid-state host.

36 MATERIALS SCIENCE↗

Latent Mechanisms of Polarization Switching from In Situ Electron Microscopy Observations

In situ scanning transmission electron microscopy enables observation of the domain dynamics in ferroelectric materials as a function of externally applied bias and temperature. The resultant data sets contain a wealth of information on polarization switching and phase transition mechanisms. However, identification of these mechanisms from observational data sets has remained a problem due to a large variety of possible configurations, many of which are degenerate. Here, an approach based on a combination of deep learning-based semantic segmentation, rotationally invariant variational autoencoder (VAE), and non-negative matrix factorization to enable learning of a latent space representation of the data with multiple real-space rotationally equivalent variants mapped to the same latent space descriptors is introduced. By varying the size of training sub-images in the VAE, the degree of complexity in the structural descriptors is tuned from simple domain wall detection to the identification of switching pathways. Importantly, this yields a powerful tool for the exploration of the dynamic data in mesoscopic electron, scanning probe, optical, and chemical imaging. Moreover, this work adds to the growing body of knowledge of incorporating physical constraints into the machine and deep-learning methods to improve learned descriptors of physical phenomena.

36 MATERIALS SCIENCE↗

Giant Magnetic and Optical Anisotropy in Cerium-Substituted M-Type Strontium Hexaferrite Driven by $4f$ Electrons

By performing density-functional calculations, we find a giant magnetocrystalline anisotropy (MCA) constant in abundant element cerium $\mathrm{Ce}$ substituted M-type hexaferrite, in the energetically favorable strontium site, assisted by a quantum confined electron transfer from $\mathrm{Ce}$ to a specific iron $\mathrm{2a}$ site. Remarkably, the calculated electronic structure shows that the electron transfer leads to the formation of $\mathrm{Ce}^{3+}$ and $\mathrm{Fe}^{2+}$ at the $\mathrm{2a}$ site producing an occupied $\mathrm{Ce}$$(4f^1)$ state below the Fermi level that adds a significant contribution to MCA and magnetic moment. A half $\mathrm{Ce}$ substitution forms a metallic state, while a full substitution retains the semiconducting state of the strontium hexaferrite (host). In the latter, the band gap is reduced due to the formation of charge-transferred states in the gap region of the host. The optical absorption coefficient shows an enhanced anisotropy between light polarization in parallel and perpendicular directions. Calculated formation energies, including the analysis of probable competing phases, and elastic constants confirm that both compositions are chemically and mechanically stable. With successful synthesis, the $\mathrm{Ce}$ hexaferrite can be an alternative high-performing critical-element-free permanent magnet material adapted for use in devices such as automotive traction drive motors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗