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At least 955 records · Page 53

All sources NASA NTRS DOE OSTI

DOE OSTI2012

Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3

Topological defects in ferroic materials are attracting much attention both as a playground of unique physical phenomena and for potential applications in reconfigurable electronic devices. Here, we explore electronic transport at artificially created ferroelectric vortices in BiFeO{sub 3} thin films. The creation of one-dimensional conductive channels activated at voltages as low as 1 V is demonstrated. We study the electronic as well as the static and dynamic polarization structure of several topological defects using a combination of first-principles and phase-field modelling. The modelling predicts that the core structure can undergo a reversible transformation into a metastable twist structure, extending charged domain walls segments through the film thickness. The vortex core is therefore a dynamic conductor controlled by the coupled response of polarization and electron-mobile-vacancy subsystems with external bias. This controlled creation of conductive one-dimensional channels suggests a pathway for the design and implementation of integrated oxide electronic devices based on domain patterning.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Defect control in the Heisenberg-Kitaev candidate material NaRuO 2

The combination of geometric frustration, extended hopping, spin-orbit coupling, and a disordered magnetic ground state make NaRuO 2 an attractive Heisenberg-Kitaev candidate material. Historically, NaRuO 2 has been a challenging material to produce, even in polycrystalline form. Here we present synthetic efforts that identify a propensity for Na Ru defects to form in NaRuO 2 , revealing a full solid-solution between NaRuO 2 and disordered Na 2 RuO 3 . We report the synthesis of alloys along the Na 3+x Ru 3–x O 6 solid solution and characterize changes in the bulk magnetization and electron transport as a function of Na loading. Furthermore, our results highlight the importance of stoichiometry control in NaRuO 2 when investigating and interpreting this material’s physical properties.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Defect-driven selective metal oxidation at atomic scale

Nanoscale materials modified by crystal defects exhibit significantly different behaviours upon chemical reactions such as oxidation, catalysis, lithiation and epitaxial growth. However, unveiling the exact defect-controlled reaction dynamics (e.g. oxidation) at atomic scale remains a challenge for applications. Here, using in situ high-resolution transmission electron microscopy and first-principles calculations, we reveal the dynamics of a general site-selective oxidation behaviour in nanotwinned silver and palladium driven by individual stacking-faults and twin boundaries. The coherent planar defects crossing the surface exhibit the highest oxygen binding energies, leading to preferential nucleation of oxides at these intersections. Planar-fault mediated diffusion of oxygen atoms is shown to catalyse subsequent layer-by-layer inward oxide growth via atomic steps migrating on the oxide-metal interface. These findings provide an atomistic visualization of the complex reaction dynamics controlled by planar defects in metallic nanostructures, which could enable the modification of physiochemical performances in nanomaterials through defect engineering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

A Comparison of Solid Electrolyte Interphase Formation and Evolution on Highly Oriented Pyrolytic and Disordered Graphite Negative Electrodes in Lithium–Ion Batteries

The presence and stability of solid electrolyte interphase (SEI) on graphitic electrodes is vital to the performance of lithium-ion batteries (LIBs). However, the formation and evolution of SEI remain the least understood area in LIBs due to its dynamic nature, complexity in chemical composition, heterogeneity in morphology, as well as lack of reliable in situ/operando techniques for accurate characterization. In addition, chemical composition and morphology of SEI are not only affected by the choice of electrolyte, but also by the nature of the electrode surface. While introduction of defects into graphitic electrodes has promoted their electrochemical properties, how such structural defects influence SEI formation and evolution remains an open question. In this work, utilizing nondestructive operando electrochemical atomic force microscopy (EChem-AFM) the dynamic SEI formation and evolution on a pair of representative graphitic materials with and without defects, namely, highly oriented pyrolytic and disordered graphite electrodes, are systematically monitored and compared. Complementary to the characterization of SEI topographical and mechanical changes during electrochemical cycling by EChem-AFM, chemical analysis and theoretical calculations are conducted to provide mechanistic insights underlying SEI formation and evolution. The results provide guidance to engineer functional SEIs through design of carbon materials with defects for LIBs and beyond.

25 ENERGY STORAGE↗

DOE OSTI2021

Defect-free-induced Na + disordering in electrode materials

For reaching high-performance of electrode materials, it is generally believed that understanding the structure evolution and heterogeneous alignment effect is the key. Presently, a very simple and universally applicable self-healing method is investigated to prepare defect-free Prussian blue analogs (PBAs) that reach their theoretical capacity as cathode materials for sodium-ion batteries (SIBs). For direct imaging of the local structure and the dynamic process at the atomic scale, we deliver a fast ion-conductive nickel-based PBA that enables rapid Na + extraction/insertion within 3 minutes and a capacity retention of nearly 100% over 4000 cycles. This guest-ion disordered and quasi-zero-strain nonequilibrium solid–solution reaction mechanism provides an effective guarantee for realizing long-cycle life and high-rate capability electrode materials that operate via reversible two-phase transition reaction. Unconventional materials and mechanisms that enable reversible insertion/extraction of ions in low-cost metal–organic frameworks (MOFs) within minutes have implications for fast-charging devices, grid-scale energy storage applications, material discovery, and tailored modification.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Effect of differently oriented interlayer phases on the radiation damage of Inconel-$\mathrm{Ni}$ multimetallic layered composite

Multimetallic layered composites (MMLCs) have shown an excellent potential for application under extreme environments, e.g., accident-tolerant fuel cladding, because of their low oxidation tendency and high corrosion resistance. Interfacial phases or complexions in nanocrystalline materials accelerate the annihilation of defects and enhance the radiation resistance of materials, making MMLCs with engineered interlayer phases compelling to deploy in extreme conditions. However, implementation of MMLCs in full capacity remained a challenge due to a lack of fundamental understanding of the underlying mechanisms governing the characteristics of the interface between the metallic layers. The precise role of interlayer phases in MMLCs and their interaction with defects, specifically under extreme conditions, is still unexplored. Pursuing atomistic simulations for various Inconel-Ni MMLCs model materials, we revealed accelerated defect mobility in interlayers with larger crystalline misorientation and the inverse relationship between the interface sink strength to the misorientation angle. Furthermore, we found a linear relation between interlayer misorientation angle with the density of radiation-induced defects and radiation enhanced displacements. So, our results indicate that radiation-induced material degradation is accelerated by the higher defect formation tendency of MMLCs with a high-angle interlayer interface.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2024

Evaluating Model Robustness for Defect Identification and Classification in a Composite Aerostructure Material

Aircraft structures are required to have a high level of quality to satisfy their need for light weight, efficient flight, and withstanding high loads over their lifespan. These aerostructures are typically made from a composite material due to their good tensile strength and resistance to compression. To ensure their structural integrity, the composite material requires inspection for common flaws such as porosity, delaminations, voids, foreign object debris, and other defects. Ultrasonic testing (UT) is a popular non-destructive inspection (NDI) technique used for effectively evaluating the composite material. Current inspection methods rely heavily on human experience and are extremely time consuming. Therefore, there is a need for the development of techniques to reduce the manual inspection time. This work compares the performance of different deep learning-based methods in the identification and classification of defects. Deep learning has shown great promise in numerous fields, and we show its effectiveness in the evaluation of the composite aerostructure material. The methods developed here are both highly reliable with a top recall value of 98.64% as well as extremely efficient requiring an average of 4 s during the inferencing stage to evaluate new composites. Lastly, we investigate model robustness to concept drift by measuring its performance over time.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Chemical Complexity Controls Energy Dissipation and Defect Evolution

The development of metallic alloys is arguably one of the oldest sciences, dating back at least 3,000 years. Most research and applications have been focused on alloys with comprised multiple phases with one or two dominant elements, to which the addition of alloying elements in low concentrations leads to various performance improvements and changes in radiation resistance. In sharp contrast to traditional alloys, recent success in the synthesis of single phase concentrated solid solution alloys (SP-CSAs) has opened up new frontiers in materials research. In these alloys, a random arrangement of multiple elemental species on a lattice (fcc or bcc) results in unique site-to-site lattice distortions and local disordered chemical environments. Intense radiation in nuclear fission and fusion energy power systems, nuclear waste forms, high-energy accelerators and space exploration transfers energy to the electrons and atoms that make up the material, and thereby produces defects that ultimately compromise material strength and lifetime. A grand challenge in materials research is to understand complex electronic correlations and non-equilibrium atomic interactions, and how such intrinsic properties and dynamic processes affect energy transfer and defect evolution in irradiated materials. Since SP-CSAs possess unique links between intrinsic material properties (can be altered by alloy complexity), energy dissipation and various defect dynamic processes; they are ideal systems to fill knowledge gaps between electronic- /atomic-level interactions and radiation resistance mechanisms. In our work, we show that chemical disorder and compositional complexity in SP-CSAs have an enormous impact on defect dynamics through substantial modification of energy dissipation pathways. Based on a closely integrated computational and experimental study using a novel set of Ni-based SP-CSAs, we have explicitly demonstrated that increasing chemical disorder can lead to a substantial reduction in the electron mean free path and electrical and thermal conductivity. These reductions have a significant impact on energy dissipation and consequentially on defect evolution during ion irradiation. Considerable enhancement in radiation resistance with increasing chemical complexity from pure nickel to binary, and to more complex quaternary solid solutions, is observed under ion irradiation. Contrary to conventional alloys with low solute concentration but multiple phases, energy dissipation and defect evolution at the level of electrons and atoms in SP- CSA systems with extreme compositional disorder is an unexplored frontier in materials science. The integrated experimental/modeling effort provides new insights into defect dynamics at the level of atoms and electrons, and an innovative path forward towards solving a long-standing challenge in structural materials. Increasing chemical complexity achieved orders-of-magnitude reductions in electron mean free paths and electron and thermal conductivities of alloys of NiCo, NiFe and NiCoFeCr, compared to Ni, and suppressed damage accumulation under ion irradiation. This discovery provides insights to address the grand challenge of understanding complex electronic correlations and non-equilibrium atomic interactions, and the effect of these intrinsic properties and dynamic processes on energy transfer and defect evolution in irradiated materials. Understanding how material properties and defect dynamics can be tailored by alloy complexity may pave the way for new design principles of functional alloys. (authors)

36 MATERIALS SCIENCE↗

DOE OSTI2018

Insights into the Stability of Zeolitic Imidazolate Frameworks in Humid Acidic Environments from First-Principles Calculations

Understanding the degradation mechanisms of zeolitic imidazolate frameworks (ZIFs) is crucial to improve their chemical stability and realize their potential industrial applications. In this work, we conduct a comprehensive study utilizing dispersion-corrected density functional theory calculations to investigate the chemical stability of bulk ZIFs and their external surfaces under conditions of acid-gas exposure. We examine the influence of steric factors such as topology and ligand functionalization on the relative chemical stability of prototypical ZIFs (ZIF-2 and ZIF-8), including their hypothetical polymorphs. We find that defect formation is more thermodynamically and kinetically favorable at ZIF external surfaces versus the bulk, and that both topology and ligand functionalization impact defect formation. In addition, we provide a detailed mechanism for the reaction of ZIFs with sulfurous and sulfuric acids, of which the latter serves as a catalyst in potential degradation reactions of ZIFs. We also provide information about the adsorption strength of a range of acid gases to defective ZIF structures, which can inform potential strategies to regenerate ZIFs and/or achieve defect engineering in these materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRSDate not supplied

Thin-Ply: Exploration and Manufacturing with Automated Fiber Placement

Abstract Highly repeatable and nearly defect-free fabrication of composite parts is critical to the success and widespread acceptance of composite materials. Through optimization using thin-ply materials, composite parts can be manufactured to be lighter and tailored more specifically to anticipated design loads than with standard prepreg materials alone. However, defects arising from the thin-ply manufacturing process are not always similar to defects found with standard tows. These new defects warrant evaluation. At NASA Langley Research Center, the manufacturing process parameters associated with automated fiber placement (AFP), a slit tape-based composite manufacturing process, were optimized for the use of a thin-ply prepreg carbon-epoxy material. Carbon-epoxy tows with areal weights of 30 g/m2 and 70 g/m2 were used in these manufacturing trials. The AFP process parameters of heater output, compaction force, tow feed rate, and tow tension were adjusted and optimized for successful manufacturing. This article documents an exploration of thin-ply fabrication on both flat and complex-shaped surfaces. Ultimately, aerospace-quality laminates were made from the 70-g/m2 material, but imperfections in the 30-g/m2 material itself and the fact that the AFP machine was not designed for such a thin material meant that more research and trials are required to obtain flight-quality 30-g/m2 laminates.

Carbon-expoxy↗

NASA NTRSDate not supplied

Exploration and Manufacturing with Automated Fiber Placement

Highly repeatable and nearly defect-free fabrication of composite parts is critical to the success and widespread acceptance of composite materials. Through optimization using thin-ply materials, composite parts can be manufactured to be lighter and tailored more specifically to anticipated design loads than with standard prepreg materials alone. However, defects arising from the thin-ply manufacturing process are not always similar to defects found with standard tows. These new defects warrant evaluation. At NASA Langley Research Center, the manufacturing process parameters associated with automated fiber placement (AFP), a slit tape-based composite manufacturing process, were optimized for the use of a thin-ply prepreg carbon-epoxy material. Carbon-epoxy tows with areal weights of 30 g/m2 and 70 g/m2 were used in these manufacturing trials. The AFP process parameters of heater output, compaction force, tow feed rate, and tow tension were adjusted and optimized for successful manufacturing. This article documents an exploration of thin-ply fabrication on both flat and complex-shaped surfaces. Ultimately, aerospace-quality laminates were made from the 70-g/m2 material, but imperfections in the 30-g/m2 material itself and the fact that the AFP machine was not designed for such a thin material meant that more research and trials are required to obtain flight-quality 30-g/m2 laminates.

carbon-epoxy↗

DOE OSTI2015

Configuration of ripple domains and their topological defects formed under local mechanical stress on hexagonal monolayer graphene

Ripples in graphene are extensively investigated because they ensure the mechanical stability of two-dimensional graphene and affect its electronic properties. They arise from spontaneous symmetry breaking and are usually manifested in the form of domains with long-range order. It is expected that topological defects accompany a material exhibiting long-range order, whose functionality depends on characteristics of domains and topological defects. However, there remains a lack of understanding regarding ripple domains and their topological defects formed on monolayer graphene. Here we explore configuration of ripple domains and their topological defects in exfoliated monolayer graphenes on SiO₂/Si substrates using transverse shear microscope. We observe three-color domains with three different ripple directions, which meet at a core. Furthermore, the closed domain is surrounded by an even number of cores connected together by domain boundaries, similar to topological vortex and anti-vortex pairs. In addition, we have found that axisymmetric three-color domains can be induced around nanoparticles underneath the graphene. This fascinating configuration of ripple domains may result from the intrinsic hexagonal symmetry of two-dimensional graphene, which is supported by theoretical simulation using molecular dynamics. Our findings are expected to play a key role in understanding of ripple physics in graphene and other two-dimensional materials.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Anti-site defect-induced disorder in compensated topological magnet MnBi2-xSbxTe4

Abstract The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi 2-x Sb x Te 4 (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating state. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with x =0.64, by scanning tunnelling microscopy/spectroscopy. We identify (Bi,Sb) Mn anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

36 MATERIALS SCIENCE↗

NASA NTRS1978

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗

DOE OSTI2019

First-principles study of coupled effect of ripplocations and S-vacancies in MoS 2

Recent experiments have revealed ripplocations, atomic-scale ripplelike defects on samples of MoS 2 flakes. We use quantum mechanical calculations based on density functional theory to study the effect of ripplocations on the structural and electronic properties of single-layer MoS 2 , and, in particular, the coupling between these extended defects and the most common defects in this material, S-vacancies. We find that the formation of neutral S-vacancies is energetically more favorable in the ripplocation. In addition, we demonstrate that ripplocations alone do not introduce electronic states into the intrinsic bandgap, in contrast to S-vacancies. We study the dependence of the induced gap states on the position of the defects in the ripplocation, which has implications for the experimental characterization of MoS 2 flakes and the engineering of quantum emitters in this material. Our specific findings collectively aim to provide insights into the electronic structure of experimentally relevant defects in MoS 2 and to establish structure-property relationships for the design of MoS 2 -based quantum devices.

36 MATERIALS SCIENCE↗

DOE OSTI2024

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge 0.94 Sn 0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge 0.94 Sn 0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge 0.94 Sn 0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge 0.94 Sn 0.06 /Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge 0.94 Sn 0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge 0.94 Sn 0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Chemical trends of deep levels in van der Waals semiconductors

Abstract Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS 2 , WS 2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

A Platform for Atomic Fabrication and In Situ Synthesis in a Scanning Transmission Electron Microscope

Here, the engineering of quantum materials requires the development of tools able to address various synthesis and characterization challenges. These include the establishment and refinement of growth methods, material manipulation, and defect engineering. Atomic-scale modification will be a key enabling factor for engineering quantum materials where desired phenomena are critically determined by atomic structures. Successful use of scanning transmission electron microscopes (STEMs) for atomic scale material manipulation has opened the door for a transformed view of what can be accomplished using electron-beam-based strategies. However, serious obstacles exist on the pathway from possibility to practical reality. One such obstacle is the in situ delivery of atomized material in the STEM to the region of interest for further fabrication processes. Here, progress on this front is presented with a view toward performing synthesis (deposition and growth) processes in a scanning transmission electron microscope in combination with top-down control over the reaction region. An in situ thermal deposition platform is presented, tested, and deposition and growth processes are demonstrated. In particular, it is shown that isolated Sn atoms can be evaporated from a filament and caught on the nearby sample, demonstrating atomized material delivery. This platform is envisioned to facilitate real-time atomic resolution imaging of growth processes and open new pathways toward atomic fabrication.

36 MATERIALS SCIENCE↗