Voltage-Controlled Magnetic Tunnel Junctions Demonstrate Resilience to Displacement Damage
RADECS 2024 submission
Bennett, Christopher↗
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Optimization of Magnetic Tunneling Junction Devices for Neuromorphic Circuits for Solving MAXCUT
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Mulet, Ian [ University of Tennessee, Knoxville]↗
Efficiency and spectral behavior of >1kW/bar multi-junction semiconductor lasers
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Engineering - Electronic and electrical engineerin↗
Shapiro Steps and Microwave Tunable Diode Effect in Novel Josephson Junctions
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Materials science↗
Slot antenna SIS mixers for submillimeter wavelengths
We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.
Zmuidzinas, Jonas↗
Local imaging of diamagnetism in proximity-coupled niobium nanoisland arrays on gold thin films.
In this work, we study the effect of engineered disorder on the local magnetic response of proximity-coupled superconducting island arrays by comparing scanning superconducting quantum interference device (SQUID) susceptibility measurements to a model in which we treat the system as a network of one-dimensional (1D) superconductor-normal-metal-superconductor Josephson junctions, each with a Josephson coupling energy E-J determined by the junction length or distance between islands. We find that the disordered arrays exhibit a spatially inhomogeneous diamagnetic response which, for low local applied magnetic fields, is well described by this junction network model, and we discuss these results as they relate to inhomogeneous 2D superconductors. Our model of the static magnetic response of the arrays does not fully capture the onset of nonlinearity and dissipation with increasing applied field, as these effects are associated with vortex motion due to the dynamic nature of the scanning SQUID susceptometry measurement. This work demonstrates a model 2D superconducting system with engineered disorder, and it highlights the impact of dissipation on the local magnetic properties of 2D superconductors and Josephson junction arrays.
Bishop-Van Horn, Logan↗
1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters
Dual-use photovoltaic cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. The cell designs are based upon the 3- junction inverted metamorphic solar cell, previously shown highly efficient for solar conversion. Because it is closely bandgap-tuned for a 1070 nm laser, the 1 eV bottom junction is incorporated into each of the two designs, making its development key to the success of both concepts. However, each design requires some modification for efficient dual use. The single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affect the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070 nm wavelength without an anti-reflection coating.
dual-use↗
New high-efficiency silicon solar cells
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.
Daud, T.↗
Response of thyroid follicular cells to gamma irradiation compared to proton irradiation: II. The role of connexin 32
The objective of this study was to determine whether connexin 32-type gap junctions contribute to the "contact effect" in follicular thyrocytes and whether the response is influenced by radiation quality. Our previous studies demonstrated that early-passage follicular cultures of Fischer rat thyroid cells express functional connexin 32 gap junctions, with later-passage cultures expressing a truncated nonfunctional form of the protein. This model allowed us to assess the role of connexin 32 in radiation responsiveness without relying solely on chemical manipulation of gap junctions. The survival curves generated after gamma irradiation revealed that early-passage follicular cultures had significantly lower values of alpha (0.04 Gy(-1)) than later-passage cultures (0.11 Gy(-1)) (P < 0.0001, n = 12). As an additional way to determine whether connexin 32 was contributing to the difference in survival, cultures were treated with heptanol, resulting in higher alpha values, with early-passage cultures (0.10 Gy(-1)) nearly equivalent to untreated late-passage cultures (0.11 Gy(-1)) (P > 0.1, n = 9). This strongly suggests that the presence of functional connexin 32-type gap junctions was contributing to radiation resistance in gamma-irradiated thyroid follicles. Survival curves from proton-irradiated cultures had alpha values that were not significantly different whether cells expressed functional connexin 32 (0.10 Gy(-1)), did not express connexin 32 (0.09 Gy(-1)), or were down-regulated (early-passage plus heptanol, 0.09 Gy(-1); late-passage plus heptanol, 0.12 Gy(-1)) (P > 0.1, n = 19). Thus, for proton irradiation, the presence of connexin 32-type gap junctional channels did not influence their radiosensitivity. Collectively, the data support the following conclusions. (1) The lower alpha values from the gamma-ray survival curves of the early-passage cultures suggest greater repair efficiency and/or enhanced resistance to radiation-induced damage, coincident with the expression of connexin 32-type gap junctions. (2) The increased sensitivity of FRTL-5 cells to proton irradiation was independent of their ability to communicate through connexin 32 gap junctions. (3) The fact that the beta components of the survival curves from both gamma rays and proton beams were similar (average 0.022 +/- 0.008 Gy(-2), P > 0.1, n = 39) suggests that at higher doses the loss of viability occurs at a relatively constant rate and is independent of radiation quality and the presence of functional gap junctions.
Non-NASA Center↗
1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters
Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.
junctions↗
Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM
We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application
We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.
25 ENERGY STORAGE↗
Antenna feed system for receiving circular polarization and transmitting linear polarization
An invention is described which provides for receiving a circularly polarized signal from an antenna feed connected to orthogonally spaced antenna elements. It also provides for transmitting a linearly polarized signal through the same feed without switches, and without suffering a 3 dB polarization mismatch loss, using an arrangement of hybrid junctions. The arrangement is comprised of two dividing hybrid junctions, each connected to a different pair of antenna elements and a summing hybrid junction. In one version, a receiver is connected to the summing hybrid junction directly. A diplexer is used to connect a transmitter to only one pair of antenna elements. In another version, designated left and right circularly polarized (LCP and RCP) transmitters are connected to the summing hybrid junction by separate diplexers, and separate LCP and RCP sensitive receivers are connected to the diplexers in order to transmit linearly polarized signals using all four antenna elements while receiving circularly polarized signals as before. An orthomode junction and horn antenna may replace the two dividing hybrid junctions and antenna feed.
Seidel, B. L.↗
Antenna feed system for receiving circular polarization and transmitting linear polarization
An object is to provide for receiving a circularly polarized signal from an antenna feed (10) connected to orthogonally spaced antenna elements (11, 12, 13, 14) and for transmitting a linearly polarized signal through the same feed without switches, and without suffering a 3 dB polarization mismatch loss, using an arrangement of hybrid junctions. The arrangement is comprised of two dividing hybrid junctions (15, 16), each connected to a different pair of antenna elements and a summing hybrid junction (17). In one embodiment, a receiver (18) is connected to the summing hybrid junction directly. A diplexer (19a or 19b) is used to connect a transmitter (20a or 20b) to only one pair of antenna elements. In an alternative embodiment, designated left and right circularly polarized (LCP and RCP) transmitters (21, 22) are connected to the summing hybrid junction by separate diplexers (23, 24), and separate LCP and RCP sensitive receivers (25, 26) are connected to the diplexers in order to transmit linearly polarized signals using all four antenna elements while receiving circularly polarized signals as before. An orthomode junction (30) and horn antenna (32) may replace the two dividing hybrid junctions (15, 16) and antenna feed (10).
Seidel, Boris L.↗
1.1 eV GaInAs Cell Development for Dual-Use Solar and 1075 nm Laser Power Converters
Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual- use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.
dual-use↗
On-chip sensing of hotspots in superconducting terahertz emitters
Intrinsic Josephson junctions in high-temperature superconductor Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. In this paper, we demonstrate an on-chip in situ sensing technique that can characterize hotspot distributions on BSCCO. This is achieved by fabricating a series of micro-nanosized "sensor" junctions on top of an "emitter" junction and measuring the critical current on the sensors versus the bias current applied to the emitter. Furthermore, this fully electronic on-chip design can enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Multiterminal Inverse AC Josephson Effect
When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect–the phase of the junction locks to the drive frequency. As a result, the I–V curves of the junction acquire “Shapiro steps” of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality. Here, we study the multiterminal inverse AC Josephson effect in a graphene sample with three superconducting terminals. We observe robust fractional Shapiro steps and correlated switching events, which can only be explained by considering the device as a completely connected Josephson network. We successfully simulate the observed behaviors using a modified two-dimensional RCSJ model. Our results suggest that multiterminal Josephson junctions are a playground to study highly connected nonlinear networks with novel topologies.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
A high-resolution single-molecule sequencing-based Arabidopsis transcriptome using novel methods of Iso-seq analysis
Accurate and comprehensive annotation of transcript sequences is essential for transcript quantification and differential gene and transcript expression analysis. Single-molecule long-read sequencing technologies provide improved integrity of transcript structures including alternative splicing, and transcription start and polyadenylation sites. However, accuracy is significantly affected by sequencing errors, mRNA degradation, or incomplete cDNA synthesis. We present a new and comprehensive Arabidopsis thaliana Reference Transcript Dataset 3 (AtRTD3). AtRTD3 contains over 169,000 transcripts—twice that of the best current Arabidopsis transcriptome and including over 1500 novel genes. Seventy-eight percent of transcripts are from Iso-seq with accurately defined splice junctions and transcription start and end sites. We develop novel methods to determine splice junctions and transcription start and end sites accurately. Mismatch profiles around splice junctions provide a powerful feature to distinguish correct splice junctions and remove false splice junctions. Stratified approaches identify high-confidence transcription start and end sites and remove fragmentary transcripts due to degradation. AtRTD3 is a major improvement over existing transcriptomes as demonstrated by analysis of an Arabidopsis cold response RNA-seq time-series. AtRTD3 provides higher resolution of transcript expression profiling and identifies cold-induced differential transcription start and polyadenylation site usage. AtRTD3 is the most comprehensive Arabidopsis transcriptome currently. It improves the precision of differential gene and transcript expression, differential alternative splicing, and transcription start/end site usage analysis from RNA-seq data. The novel methods for identifying accurate splice junctions and transcription start/end sites are widely applicable and will improve single-molecule sequencing analysis from any species.
transcription start and end sites↗