Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “charge coupled devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A small heterocyclic molecule as a multistate transistor: a quantum many-body approach

Weakly coupled molecular junctions are an active and important field of research due to their non-linear charge carrier transport. In this study, we investigate transport properties in a weakly coupled molecule, B 2 C 2 N 2 H 6 , using a combined quantum many-body approach and kinetic (master) equations. Various non-linear current–voltage characteristics such as negative differential conductance (NDC), rectifications, and Coulomb staircase, which are the hallmarks of multistate transport devices, have been obtained. We further explore the effect of different perturbations such as gate voltage and perpendicular magnetic field on molecular transport. Depending on the strength of the applied perturbing field, several phenomena such as current switching, and suppression of NDC, have been realized in the device. This study demonstrates small molecules as promising components in next-generation nano-devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and room-temperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of high-performance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ~ 0.5–5 × 10 12 Jones), fast 3 dB electrical bandwidth (3 dB BW ~ 22 MHz), low dark current density (J D ~ 5–10 pA/cm 2 ), low noise current (i n ~ 20–25 fW/Hz 1/2 ), and high linear dynamic range (LDR ~130–150 dB) across the measured visible electromagnetic spectrum (~405–656 nm).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Plasmon Mediated Near–Field Energy Transfer From Solid–State, Electrically Injected Excitons to Solution Phase Chromophores

An organic diode is demonstrated that near-field energy transfers to molecules in solution via surface plasmon polaritons, in contrast to typical far-field excitation via absorption of traveling photons. Electrically generated excitons couple to surface plasmon modes in the cathode; the plasmons subsequently excite chromophore molecules on top of the cathode. External quantum efficiency and time resolved photoluminescence measurements are used to characterize the diode and the near-field energy transfer process. In addition, it is shown that excited chromophores can charge-transfer to quencher molecules, illustrating the potential of this device to be used for photochemical applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Controllable Phase Transition Properties in VO 2 Films via Metal-Ion Intercalation

VO 2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (T c ) tuning in VO 2 is desired. Here, in this study, tailorable SMT characteristics in VO 2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li + during the intercalation process, T c of VO 2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective T c tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO 2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO 2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Superconductivity in a doped valley coherent insulator in magic angle graphene: Goldstone-mediated pairing and Kohn-Luttinger mechanism

We consider magic angle graphene in the doping regime around charge neutrality and study the connection between a recently proposed inter-valley coherent insulator at zero doping and the neighboring superconducting domes. The breaking of the valley U(1) symmetry leads to massless Goldstone modes, which couple to the doped charge carriers. We derive the effective interaction between these Goldstone modes and the conduction electrons and study its role in mediating superconductivity. Combining it with the screened Coulomb potential, we find weak-coupling superconducting instabilities in the two-component p- and d-wave channels. The competition between the two channels is set by the distance between the bilayer graphene device and the metallic gates. We find that the p-wave instability originates from the attraction mediated by the Goldstone modes, while the d-wave pairing is caused purely by the screened Coulomb interaction, similarly to the Kohn-Luttinger mechanism.

Kozii, Vladyslav↗
DOE OSTI2022

Watching Polarons Move in the Energy and Frequency Domains Using Color Impedance Spectroscopy

The hybrid electronic–ionic transport property of π-conjugated polymers enables new (opto)electrochemical device constructs for energy conversion and storage and biosensing applications. One major challenge is separating the energy and frequency dependence of Faradaic events–those involving charge transfer and the redox processes of the conjugated backbone–from the non-Faradaic components, such as ionic motion. Herein, we combine optical spectroscopy with electrochemical impedance spectroscopy (EIS) to resolve the frequency response of ionic–electronic coupling as a function of electrochemical doping potential. First, using EIS, we identify two different frequency regimes resulting in potential-dependent capacitive elements on the order of ~10 μF/cm 2 in a high-frequency regime and ~50–150 μF/cm 2 in a low-frequency regime. Given the larger magnitude and greater potential dependence, we posit that polaronic motion is more likely to occur at low frequencies (<1 kHz) and overlaps with ionic motion. The use of color impedance spectroscopy (CIS) enables observation of polaronic motion with frequency modulation. We observe that higher doping potentials show a greater motion of polarons above the DC-bias baseline concentration for onset in electrochemical doping, but all potentials considered demonstrate a critical frequency at which the polaronic motion is “frozen” (~40 Hz). Furthermore, this critical information obtained from CIS in highly dielectric environments offers a unique figure of merit for future studies on electronic–ionic coupling by which to compare across polymer/electrolyte interfaces, including the role of a charge-supporting electrolyte, a solvent, and alternative Faradaic processes (e.g., electrocatalysis).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Image Processing Algorithms for Tuning Quantum Devices and Nitrogen-Vacancy Imaging

Semiconductor quantum dot devices can be challenging to configure into a regime where they are suitable for qubit operation. This challenge arises from variations in gate control of quantum dot electron occupation and tunnel coupling between quantum dots on a single device or across several devices. Furthermore, a single control gate usually has capacitive coupling to multiple quantum dots and tunnel barriers between dots. If the device operator, be it human or machine, has quantitative knowledge of how gates control the electrostatic and dynamic properties of multiqubit devices, the operator can more quickly and easily navigate the multidimensional gate space to find a qubit operating regime. We have developed and applied image analysis techniques to quantitatively detect where charge offsets from different quantum dots intersect, so called anticrossings. In this document we outline the details of our algorithm for detecting single anticrossings, which has been used to fine-tune the inter-dot tunnel rates for a three quantum dot system. Additionally, we show that our algorithm can detect multiple anticrossings in the same dataset, which can aid in the coarse tuning the electron occupation of multiple quantum dots. We also include an application of cross correlation to the imaging of magnetic fields using nitrogen vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Modeling and Analysis of a Heat Pump Clothes Dryer with Thermal Energy Storage

Clothes drying is an energy-intensive process that causes significant electricity consumption and carbon emissions in the US. Approximately 83% of Households in the US own a tumble clothes dryer at home and 80% of dryers are electrical resistance dryers with low energy efficiency. Heat pump technology makes it possible for highly efficient and clean drying. Additionally, the ventless design of heat pump clothes dryers (HPCD) provides more installation flexibility. HPCD involves three primary mediums: wet clothes, a closed air loop, and a refrigerant circuit. The evaporator is used to dehumidify the wet air and the condenser is used to re-heat the dry air. One of the critical technological barriers to HPCD market penetration is its long drying time, primarily due to the relatively low discharging temperature and the slow response during the warm-up period. In this study, the thermal energy storage (TES) technology is adopted to address this challenge by providing pre-heating of air prior to the condenser to increase the operating temperature of the process air. The heat pump will charge the phase change material (PCM) in the TES device with heating energy during clothes washing and the PCM will discharge the stored heat to facilitate air heating during clothes drying. To analyze the optimal design and potential for energy saving and drying time reduction, a mathematical model of the HPCD system was developed. The HPCD is a highly dynamic system with a coupled heat and mass transfer and heat pumping cycle. This paper provides solutions to simulate the transient behavior of the system while maintaining low computational cost. The modeling result indicates reduced energy consumption and drying time by integrating TES with HPCD, as compared to electrical resistance dryers. The study can provide significant insights into improving building flexibility with TES and smart appliances.

Liu, Xiaoli↗
DOE OSTI2024

Solar enhanced oxygen evolution reaction with transition metal telluride

The photo-enhanced electrocatalytic method of oxygen evolution reaction (OER) shows promise for enhancing the effectiveness of clear energy generation through water splitting by using renewable and sustainable source of energy. However, despite benefits of photoelectrocatalytic (PEC) water splitting, its uses are constrained by its low efficiency as a result of charge carrier recombination, a large overpotential, and sluggish reaction kinetics. Here, we illustrate that Nickel telluride (NiTe) synthesized by hydrothermal methods can function as an extremely effective photo-coupled electrochemical oxygen evolution reaction (POER) catalyst. In this study, NiTe was synthesized by hydrothermal method at 145°C within just an hour of reaction time. In dark conditions, the NiTe deposited on carbon cloth substrate shows a small oxygen evolution reaction overpotential (261 mV) at a current density of 10 mA cm –2 , a reduced Tafel slope (65.4 mV dec -1 ), and negligible activity decay after 12 h of chronoamperometry. By virtue of its enhanced photo response, excellent light harvesting ability, and increased interfacial kinetics of charge separation, the NiTe electrode under simulated solar illumination displays exceptional photoelectrochemical performance exhibiting overpotential of 165 mV at current density of 10 mA cm -2 , which is about 96 mV less than on dark conditions. In addition, Density Functional Theory investigations have been carried out on the NiTe surface, the results of which demonstrated a greater adsorption energy for intermediate -OH on the catalyst site. Since the -OH adsorption on the catalyst site correlates to catalyst activation, it indicates the facile electrocatalytic activity of NiTe owing to favorable catalyst activation. DFT calculations also revealed the facile charge density redistribution following intermediate -OH adsorption on the NiTe surface. This work demonstrates that arrays of NiTe elongated nanostructure are a promising option for both electrochemical and photoelectrocatalytic water oxidation and offers broad suggestions for developing effective PEC devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Signatures of moiré trions in WSe 2 /MoSe 2 heterobilayers

Moiré superlattices formed by van der Waals materials can support a wide range of electronic phases, including Mott insulators superconductors and generalized Wigner crystals2. When excitons are confined by a moiré superlattice, a new class of exciton emerges, which holds promise for realizing artificial excitonic crystals and quantum optical effects. When such moiré excitons are coupled to charge carriers, correlated states may arise. However, no experimental evidence exists for charge-coupled moiré exciton states, nor have their properties been predicted by theory. In this work, we report the optical signatures of trions coupled to the moiré potential in tungsten diselenide/molybdenum diselenide heterobilayers. The moiré trions show multiple sharp emission lines with a complex charge-density dependence, in stark contrast to the behaviour of conventional trions. We infer distinct contributions to the trion emission from radiative decay in which the remaining carrier resides in different moiré minibands. Variation of the trion features is observed in different devices and sample areas, indicating high sensitivity to sample inhomogeneity and variability. The observation of these trion features motivates further theoretical and experimental studies of higher-order electron correlation effects in moiré superlattices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Review of radiation-induced defects in GaAs

Radiation-resilient optoelectronic materials are highly desired in space and nuclear applications, and understanding the relevant defects and electronic processes in those materials is crucial for both current and next-generation applications. GaAs is a prototypical semiconductor that serves as a foundational system for describing and understanding optoelectronic devices. In this review, both experimental studies and molecular dynamics (MD) simulations of irradiated GaAs are reviewed, with particular emphasis on the deep-level transient spectroscopy, irradiation-induced amorphization zones, and MD predictions of damage structures. The MD results are also compared to predictions of the non-ionized energy-loss model. Recent theoretical studies, in particular, density functional theory based calculations on the simple intrinsic defects and defect clusters in GaAs, are also reviewed. These defects have an important role in dictating the evolution of GaAs in radiation damage environments, as they impact the coupled dynamics of charge carriers. Finally, possible gaps and challenges toward the general understanding of defect evolution in GaAs are discussed.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially non-oscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗
NASA NTRS1991

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially nonoscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗
DOE OSTI2022

Ion-Assisted Ligand Exchange for Efficient and Stable Inverted FAPbI 3 Quantum Dot Solar Cells

Perovskite quantum dot (QD) has emerged as a promising material for photovoltaics with its superior stability compared to their three-dimensional bulk counterparts, owing to its thermodynamically stabilized photoactive phase. However, ligand management on perovskite QD surfaces is extremely difficult due to the ionic nature of the perovskite lattice, which often leads to either incomplete removal of the native insulating ligands or formation of trap states during the ligand-exchange process, greatly hampering the photovoltaic performances. In this work, we report an ion-assisted ligand-exchange method for FAPbI 3 QDs using AOAc (A = formamidinium (FA + ), guanidinium (GA + ), and phenethylammonium (PEA + ), OAc = acetate), with the A + and OAC - ions promoting the removal of native long-chain insulating ligands. Further, the more complete ligand exchange results in dense and well-oriented packing of QDs, together with the enhancement of electronic coupling and charge transport across QDs. In addition, the A + and OAC - ions can fill the surface A-/X-site vacancies, respectively, reducing the QD surface trap state density and hence suppressing charge recombination and iodide migration. The p-i-n inverted QD solar cells fabricated with this ligand-exchange method exhibit significant enhancement in shortcircuit current density (J SC ), reaching a PCE of 10.13%. Moreover, unencapsulated devices show impressive stabilities of more than 7300 h (10 months) storage time in a N 2 -filled glovebox.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Performance of a Hybrid HVAC-Integrated Thermal Storage Device

Thermal equipment in buildings is a primary contributor to peak loads on the electrical grid. Thermal energy storage is a cost-effective strategy to decouple electric use from thermal loads, thus reducing grid peak costs for building owners. One method for storing thermal energy in a building is to integrate a phase change material (PCM) directly into the heating, ventilation, and air conditioning system. These systems often require additional glycol loops, pumps, valves, and heat exchangers to couple the storage to the cooling system and building space, which increases the complexity and cost. This work will discuss an alternate approach where the storage is added directly into the heat pump evaporator. A detailed two-dimensional finite difference heat transfer model of a PCM-refrigerant-glycol heat exchanger was developed to simulate the performance of this component. The fluid stream was discretized along the flow direction to capture changes in the fluid properties and local heat transfer rates, and the phase change material was discretized in both the x and y directions to capture the movement of the melt front. The model was used to understand the impact of different material and geometric properties on the charge and discharge characteristics of the device. Finally, a Ragone framework analogous to that used for electrochemical batteries was used to maximize the energy density and round-trip efficiency of the device while supplying loads appropriate for space cooling in buildings.

buildings↗
DOE OSTI2020

High‐Performance Fluorinated Fused‐Ring Electron Acceptor with 3D Stacking and Exciton/Charge Transport

Abstract A new fluorinated electron acceptor (FINIC) based on 6,6,12,12‐tetrakis(3‐fluoro‐4‐hexylphenyl)‐indacenobis(dithieno[3,2‐ b ;2 ′ ,3 ′ ‐ d ]thiophene) as the electron‐donating central core and 5,6‐difluoro‐3‐(1,1‐dicyanomethylene)‐1‐indanone as the electron‐deficient end groups is rationally designed and synthesized. FINIC shows similar absorption profile in dilute solution to the nonfluorinated analogue INIC. However, compared with INIC, FINIC film shows red‐shifted absorption, down‐shifted frontier molecular orbital energy levels, enhanced crystallinity, and more ordered molecular packing. Single‐crystal structure data show that FINIC molecules pack into closer 3D “network” motif through H‐bonding and π–π interaction, while INIC molecules pack into incompact “honeycomb” motif through only π–π stacking. Theoretical calculations reveal that FINIC has stronger electronic coupling and more molecular interactions than INIC. FINIC has higher electron mobilities in both horizontal and vertical directions than INIC. Moreover, FINIC and INIC support efficient 3D exciton transport. PBD‐SF/FINIC blend has a larger driving force for exciton splitting, more efficient charge transfer and photoinduced charge generation. Finally, the organic solar cells based on PBD‐SF/FINIC blend yield power conversion efficiency of 14.0%, far exceeding that of the PBD‐SF/INIC‐based devices (5.1%).

Dai, Shuixing↗
DOE OSTI2025

Pressure‐Induced Metallization and Isostructural Transitions in 3R‐MoS2

At ambient conditions 3R-polytypes of transition metal dichalcogenides (TMDs) demonstrate fascinating properties because of their unique layer stacking. Understanding the structure-property relationship is essential for the realization of their use in spintronic, valleytronic, and optoelectronic applications. Herein, after the high pressure-temperature synthesis of 3R-MoS2 in a large volume cubic press, a concomitant experimental and theoretical high-pressure study of 3R-MoS2 is reported, leading to the discovery of pressure-induced reversible isostructural phase transitions without symmetry breaking. Concurrent with the isostructural transitions, a semiconductor-to-metal transition is observed, owing to strong interlayer interaction and charge redistribution across the van der Waals gap under pressure. The pressure-induced enhancement of interlayer interactions together with the robust intrinsic layer stacking in 3R-MoS2 prevent the layers from sliding under pressure and hinder a corresponding volume collapse. This study on continuous pressure-tuning of crystal and electronic structure in 3R-MoS2 will play a vital role in developing the next-generation devices involving coupling of structural, optical, and electrical properties of 3R-polytypes of TMDs and other layered materials.

Ahmad, Azkar Saeed↗
DOE OSTI2020

State preparation and measurement in a quantum simulation of the $O(\mathrm{3})$ sigma model

Recently, Singh and Chandrasekharan [Phys. Rev. D 100, 054505 (2019)] showed that fixed points of the nonlinear O ( 3 ) sigma model can be reproduced near a quantum phase transition of a spin model with just two qubits per lattice site. In a paper by the NuQS Collaboration [Phys. Rev. Lett. 123, 090501 (2019)], the proposal is made to simulate such field theories on a quantum computer using the universal properties of a similar model. In this paper, following that direction, we demonstrate how to prepare the ground state of the model from Singh and Chandrasekharan and measure a dynamical quantity of interest, the O ( 3 ) Noether charge, on a quantum computer. In particular, we apply Trotter methods to obtain results for the complexity of adiabatic ground state preparation in both the weak-coupling and quantum-critical regimes and use shadow tomography to measure the dynamics of local observables. Finally, we then present and analyze a quantum algorithm based on nonunitary randomized simulation methods that may yield an approach suitable for intermediate-term noisy quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗