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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Qin, Yuan↗
DOE OSTI2021

A Comparison of Emerging Nonfluoropolymer-Based Coextruded PV Backsheets to Industry-Benchmark Technologies

As the photovoltaic (PV) industry is rapidly expanding around the world, there has been an increasing interest in extending the lifespan of PV modules. Concern has also emerged regarding the recyclability of modules and their component materials, including fluoropolymer-based backsheets. Laminated polyethylene-terephthalate (PET) core backsheets have traditionally been used in the PV industry, but new, coextruded polyolefin (PO) backsheets show promise as an improved alternative. In this work, minimodule and coupon samples of seven different backsheets (made of layers including contemporary PET and fluoropolymers, novel PO, and polyamide materials) were run through hygrometric- or UV photolytic-accelerated aging to identify and better understand each material's degradation modes and the backsheets' field reliability. In addition to the artificial aging, the natural weathering methods used in this article are described. The comprehensive set of chemical, mechanical, and structural characterizations at intermittent read points in this article is presented, including: visual appearance and color; gloss; mechanical tensile testing; I-V performance; electroluminescence (EL) imaging; dielectric breakdown; Fourier-transform infrared-chemical structure; X-ray-polymer structure; and differential scanning calorimetry-crystalline content. After 4000 h of aging, a strong correlation occurs between initial physical characteristics (mechanical tensile test) and operating performance (EL and I-V characteristics).

14 SOLAR ENERGY↗
DOE OSTI2020

Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

42 ENGINEERING↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

A Sparse and Low Rank Penalized Signal Decomposition Model with Constraints: Anomaly Detection in PV Systems

Recently, robust PCA has seen its wide application in various industries for its ability to perform the task of anomaly detection. The essence of robust PCA approach is to break down the signal into a low rank component and sparse component. In many applications, a simple breakdown of the signal without accounting for the signs of low rank components and sparse components would violate the physical constraints of the decomposed signal. In addition, often times, the signals in the real world collected for a long duration has smooth changes within a day and between days. As an example, the power signals collected in a photovoltaic (PV) system are cyclostationary, exhibiting these characteristics. Neglecting the smoothness of signals would result in miss detection of anomalous signals which are smooth within a day but non-smooth between days and vice versa. In this paper, we developed a signal decomposition approach for the purpose of anomaly detection based on the idea of low rank and sparse decomposition taking into consideration the signs of the decomposed low rank and sparse components and the within-day and between-day smooth changes in the original signals. The proposed unsupervised approach for fault detection eliminates the need for faulty samples required by other machine learning methods. It does not require the full I-V characteristics to work. Furthermore, there is no need for complex modelling of PV systems as in the case of power loss analysis. Using Monte Carlo simulations, we demonstrate the ability of our proposed approach for detecting anomalies of different duration and severity in PV systems.

14 SOLAR ENERGY↗
DOE OSTI2023

A Comparison of Emerging and Industry Benchmark Photovoltaic Backsheets Between Different Outdoor Locations

Recent interest within the photovoltaic (PV) module industry is largely directed toward enhanced lifetimes in the field, balanced with improved recyclability. Traditionally, fluoropolymer-based backsheets have been used, however, are difficult to recycle. Emerging polyolefin (PO)-based backsheets are more recyclable and can be formulated to be robust. Properties of different fluoropolymer- and non-fluoropolymer-based backsheet coupons and in encapsulated silicon mini modules that have been fielded in Albuquerque, NM and Cocoa, FL are reported here. Seven backsheets were examined: two novel PO's, TPT, APO, PPE, AAA, and KPf. Methods of examination include module electrical performance (I - V flash test), surface morphology (optical microscope and gloss), polymer chemical structure (FTIR), EL imaging, mechanical tensile testing, DC breakdown voltage, DSC (phase transitions), and optical performance (reflectance spectra).

industries↗
DOE OSTI2021

Assessment of MQXF Quench Heater Insulation Strength and Test of Modified Design

The HL-LHC interaction region magnet triplets (Q1,Q2, and Q3) will be composed of superconducting Nb 3 Sn quadrupoles. The MQXF quadrupole protection system is based on CLIQ (Coupling-Loss Induced Quench system) and outer layer quench heaters. Furthermore, this paper reports a summary of quench heaters to coil high voltage tests performed on MQXF short and long coils in air after fabrication, and in air and He gas after magnet training. Breakdown voltage values demonstrate good margin with respect to the Electrical design criteria for the HL-LHC inner triplet mag-nets. A modification in the quench heater installation-with an extra layer of fiber glass between the coil and the quench heater trace-has been proposed and tested in a mirror magnet to further increase electrical margins. Results demonstrated improvements of high voltage margin at the expense of a clear increase of hot spot temperature.The baseline heater to coil insulation was assessed to be able to guarantee safe operation for the Nb 3 Sn quadrupole magnets for the interaction regions of HL-LHC.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Design, Construction, and Testing of 0.5-m, 18-mm Period Nb 3 Sn Superconducting Undulator Magnets

We report design and fabrication of a new Nb 3 Sn-based superconducting undulator (SCU) are underway at the Advanced Photon Source (APS) of Argonne National Laboratory in collaboration with Fermilab and Lawrence Berkeley National Laboratory. To develop a robust and reliable fabrication process, the magnet development consists of several steps. First, magnetic and mechanical simulations were performed to optimize the magnet design; then, the design matured further by fabricating and testing a series of very short prototypes, ~8 cm long with a period length of 18 mm. These short prototype studies were previously reported. Second, the design was scaled to an intermediate length of ~0.5 m. These two steps led to the final design of ~1.1–m-long magnets, which are currently being fabricated. The quench behavior of each 0.5-m-long undulator magnet, as well as undulator assemblies from these magnets, was studied. The first SCU magnet assembly did not meet the design specifications due to the breakdown of the insulation. With an improved design and fabrication process based on lessons learned, the second SCU assembly achieved the design undulator field of 1.2 T. The design was further optimized, and the third set of magnets was fabricated and successfully tested.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface-Electrode Ion Traps

Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at 200 ° C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.

Haltli, Raymond A.↗
DOE OSTI2020

HVDC Surface Flashover in Compressed Air for Various Dielectrics

Here, this study measures the voltage at which flashover occurs in compressed air for a variety of dielectric materials and lengths in a uniform field for DC voltages up to 100 kV. Statistical time lag is recorded and characterized, displaying a roughly exponential dependence on breakdown voltage. Of the materials tested, acrylic is observed to be the most resistant to flashover. These data are intended to facilitate the design of compressed-air insulated high voltage systems as an alternative to SF 6 insulated systems.

42 ENGINEERING↗
DOE OSTI2025

Humidity-Dependent Electrostatic Charge Decay on Dielectric Surface in Enclosed Volumes

Electrostatic surface charge decay is investigated to determine loss mechanisms, the effect of humidity, enclosure size, and material. This work focuses on charging dielectric and metal surfaces close to the electrical breakdown threshold in atmospheric air under humid and dry conditions. After initial charging to a maximum potential of roughly 30 kV, the associated surface charge is allowed to decay because of recombining with ions from the natural background, resulting in decay times ranging from minutes to hours to days. Spheres with a radius of 50 mm consisting of varying materials (PTFE and metal as referenced later) are charged and tested at relative humidity levels, RH, of 10%, 35%, and 64%. It was found that the ion-ion pair production rate and the enclosure size affected the measured charge decay rate. The impact of air convection on charge decay in the open air (no enclosure) is discussed. The humidity increased the rate of charge decay on the metal and dielectric spheres. For example, in the first 25 minutes after charging, the total charge on the PTFE sphere decreased to 66%or 50% from its initial value in the 10% and 35% RH tests, respectively. An equivalent generation rate is found for the ions in the enclosure, with 10 and 24 ion pairs cm −3 s −1 being generated at a 5% and 49% relative humidity, respectively.

42 ENGINEERING↗
DOE OSTI2021

Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

The design space of Ga 2 O 3 -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga 2 O 3 -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R ON -breakdown voltage limit of Ga 2 O 3 NP-SBD, enabling >4 kV blocking voltage at R ON of 1–3 mΩ cm 2 . Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga 2 O 3</sub NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m • K).

36 MATERIALS SCIENCE↗
DOE OSTI2021

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific ON-resistance of 100.8 mΩ · cm 2 .

42 ENGINEERING↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗