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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. Finally, this property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Influence of dislocations and twin walls in BaTiO 3 on the voltage-controlled switching of perpendicular magnetization

In this work, we investigate the influence of dislocations and twin walls in BaTiO 3 on its ferroelectric response and the resulting effect on the perpendicular magnetic anisotropy (PMA) of a strain-coupled [Co\Ni] n film. A dense twinned structure in conjunction with a high dislocation density significantly reduces the converse piezoelectric effect of BaTiO 3 by hindering the propagation of newly nucleated domains with an applied electric field. This, in turn, results in a modest reduction of the PMA of the ferromagnetic layer. On the other hand, the ferroelectric polarization reorients from [100] to [001] direction in a dislocation-free BaTiO 3 , inducing the maximum achievable in-plane compressive strain of 1.1%. A large fraction of this uniaxial strain is transferred to the magnetoelastically coupled ferromagnetic layers whose magnetization switches to in plane via the inverse magnetostriction effect. This work reveals the critical role of the interplay between twin walls and dislocations within a ferroelectric substrate in the performance of multiferroic heterostructures and provides insight into the development of highly energy-efficient magnetoelectric devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Flexible PCB Windings Size Optimization for Winding AC Resistance Minimization Under the Sinusoidal Voltage Regime

In this paper, optimization of the winding AC resistance of the flexible printed circuit board (FPCB) wire windings is performed. A one-dimensional model of the FPCB winding is introduced and an equation for the FPCB winding AC resistance and its low and medium frequency approximation are derived. The approximate FPCB winding AC resistance equation is used to derive optimum thickness of the FPCB winding conductor thickness at which minimum of winding AC resistance (global optimum) is achieved. The Finite Element Method analysis and experimental verification of derived equations (winding resistance, impedance, power loss, and temperature measurements) is performed in order validate derived model and winding resistance equation.

42 ENGINEERING↗
DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗
DOE OSTI2023

Zero Voltage Switching AC-DC Converter Based on Zero State Modulation (ZSM)

In this paper, a half-bridge building block that can achieve soft switching across the complete operating range while operating under fixed frequency is proposed. In addition, dead-beat model predictive controls to control the same are also proposed. The proposed converter, referred to as zero-state modulated (ZSM) converter, uses a zero state, enabled by a small auxiliary switch, to achieve soft-switching. The approach allows lower switching loss, controlled dv/dt, small filter inductor, fixed frequency operation allowing interleaving to reduce filter capacitor. A single half-bridge building block can used to realize a ZVS DC-DC converter or multiple of these building blocks can be used to achieve soft switching 1-phase or 3-phase AC-DC converters.

Kandula, Prasad↗