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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

High frequency modulation circuits based on photoconductive wide bandgap switches

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Trends in SiC MOSFET Threshold Voltage and ON-Resistance Measurements from Thermal Cycling and Electrical Switching Stresses: Preprint

Integrating SiC power MOSFETs is very attractive for advancing power electronic systems, yet the system reliability with new devices remains in question. This work presents two accelerated test experiments to further investigate the packaging and semiconductor failures of a TO-247 SiC MOSFET. First, a variation on power cycling experiments -- switching cycling -- is introduced. Traditional power cycling experiments utilize conduction losses to self-heat the device where a large temperature swing causes degradation at the packaging level. However, by decreasing the on-time such that the device only turns on and immediately turns off, the temperature swing is decreased and the semiconductor itself is degraded. This work shows experimental device degradation caused by continuous switching events - switching cycling, at 90% of the device's breakdown voltage. Second, thermal cycling experiments were conducted between -40 degrees C and 175 degrees C to observe degradation in the mechanical packaging of the device. Experimentally-measured changes in threshold voltage and ON-resistance are recorded in both experiments and compared. These results also illustrate the spectrum between device and package degradation from accelerated test methods.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2018

Gas tube-switched flexible alternating current transmission system

A var compensator circuit is provided. The var compensator circuit includes a gas tube switch and a reactive impedance. The gas tube switch is configured to be coupled to a transmission line. The transmission line is configured to deliver real power and reactive power to a load at an alternating current (AC) line voltage. The reactive impedance is configured to be coupled to the transmission line at the AC line voltage through the gas tube switch. The reactive impedance is configured to modify the reactive power configured to be delivered to the load.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2019

Low voltage drop, cross-field, gas switch and method of operation

A gas switch includes an anode and a cathode spaced apart from the anode, wherein the cathode includes a conduction surface. The gas switch also includes a plurality of magnets arranged to generate a magnetic field that defines an annular path over a portion of the conduction surface at a radial distance from a switch axis, and a control grid positioned between the anode and the cathode. In operation, the control grid is arranged to establish a conducting plasma between the anode and the cathode, wherein, in the presence of the conducting plasma, a voltage drop between the anode and the cathode is less than 150 volts, and wherein the conducting plasma forms a cathode spot that circles the annular path.

42 ENGINEERING↗
DOE OSTI2019

Low sputtering, cross-field, gas switch and method of operation

A gas switch includes a gas-tight housing containing an ionizable gas, an anode disposed within the gas-tight housing, and a cathode disposed within the gas-tight housing, where the cathode includes a conduction surface. The gas switch also includes a control grid positioned between the anode and the cathode, where the control grid is arranged to receive a bias voltage to establish a conducting plasma between the anode and the cathode. In addition, the gas switch includes a plurality of magnets selectively arranged to generate a magnetic field proximate the conduction surface that reduces the kinetic energy of charged particles striking the conduction surface and raises the conduction current density at the cathode surface to technically useful levels.

42 ENGINEERING↗
DOE OSTI2020

High voltage, cross-field, gas switch and method of operation

A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.

42 ENGINEERING↗
DOE OSTI2019

Final Conversion of the Spallation Neutron Source Extraction Kicker Pulse Forming Network to a High Voltage Solid-State Switch

The Spallation Neutron Source (SNS) extraction kicker 60Hz pulsed system uses 14 Blumlein pulse-forming network (PFN) modulators that require timing synchronization with stable rise times. A replacement design has been investigated and the kickers have been converted over to use a solid-state switch design, eliminating the lifetime and stability issues associated with thyratrons and subsequent maintenance costs. All kickers have been converted, preventing thyratron jitter from impacting the beam performance and allowing higher-precision target impact. This paper discusses the completion of the conversion of the high-voltage switch from a thyratron to a solid-state switch with improved stability of the extraction system and associated accelerator beam stability.

Morris, B↗
DOE OSTI2021

Switched low-dropout voltage regulator

High-resolution switched digital regulators are disclosed having fast cross corner and variable temperature response, with constrained ripple. The strength of the power transistors utilized by the regulator are adjusted to control the current delivered to the load. The regulators utilize a slow control loop in parallel with a primary fast switching loop. The slow loop uses the switching signal of the primary loop to estimate the load current and set the power transistor size accordingly.

Kudva, Sudhir Shrikantha↗
DOE OSTI2021

Soft-switching, high performance single-phase AC-DC converter

A soft-switching, high-performance single-phase alternating current (AC)-direct current (DC) converter is provided. The AC-DC converter described herein provides a new circuit topology for single-stage, single-phase or multi-phase AC-DC power conversion with power factor correction (PFC) and galvanic isolation using a high-frequency isolation transformer. The AC-DC converter improves power conversion efficiency and power density—two of the most important metrics for a power converter. It achieves soft switching for high frequency switches in the circuit, leading to higher efficiency and lower electromagnetic interference (EMI).

Ayyanar, Rajapandian↗
DOE OSTI2021

Steep slope transistors with threshold switching devices

A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

Huang, Xuanqi↗
DOE OSTI2021

Oxygen-responsive bacterial gene switch

The invention provided herein relates to sequence determinants that elicit certain levels of gene expression and methods for obtaining engineered ligand-responsive gene switches comprising these sequence determinants. More particularly, the invention provided herein relates to molecular building blocks (i.e., discrete nucleotide sequences), synthetic ligand-responsive gene switches comprising an assembly of these molecular building blocks, and methods of using synthetic ligand-responsive gene switches as customizable and controllable expression systems and sensors.

Kiley, Patricia J.↗
DOE OSTI2022

Development and Performance Evaluation of of Active Insulation Systems using Solid-State Thermal Switches

Traditional building envelopes have passive insulation systems that cannot respond to dynamic changes in the environment. An Active Insulation System (AIS) consists of Active Insulation Materials (AIMs), which dynamically vary the thermal conductivity of the insulation system. Several researchers have evaluated the impact of AIS on building thermal and energy performance by using simulation tools. Up to 70% savings in annual heating and cooling energy and significant reductions in peak demand have been predicted for some climates with wall systems employing AIS. Sensitivity studies have provided requirements for the AIS properties and control schemes that can lead to those savings. However, materials and assembly development have not yet achieved a cost-effective product that achieves the required performance. In this study, we present the process to develop an AIS that we will install in a test hut for their performance evaluation. Minimum performance criteria of the AIS system are developed based on Rmin/Rmax ratio, required time and efficiency to switch states and cost estimate. The next step carried out during this study is creating the concept to meet the requirements, predicting the performance by simulations, developing the experimental setup for bench-scale testing, and finally, constructing a full-scale wall assembly and monitoring the performance when exposed to natural weather conditions. The selected approach uses off-the-shelf products to create a materials system that can switch R-value between R~=1 ft2·°F·h/BTU (0.18 m2·K/W) and R~=7 ft2·°F·h/BTU (1.23 m2·K/W and have a switching time of less than one minute between R-high and R-low.

Iffa, Emishaw↗
DOE OSTI2023

Fluid power circuit having switch-mode power transformer and methods

A fluid power circuit with a switch-mode power transformer used to transfer power while keeping the pressure of power source and reverse osmosis processes relatively decoupled. The switch-mode power transformer uses the inertia of a hydraulic motor driven electric generator and switching of a hydraulic motor inlet between high and low-pressure ends to decrease the pressure at which power is being transmitted to a reverse osmosis process.

Simmons, II, Jeremy W.↗
DOE OSTI2023

Pulse compression photoconductive semiconductor switches

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

Voss, Lars F.↗
DOE OSTI2026

Integrated Transmission-Distribution Multi-Period Switching for Wildfire Risk Mitigation: Improving Speed and Scalability with Distributed Optimization: Preprint

With increasingly severe wildfire conditions driven by climate change, utilities must manage the risk of wildfire ignitions from electric power lines. During "public safety power shutoff'" events, utilities de-energize power lines to reduce wildfire ignition risk, which may result in load shedding. Distributed energy resources provide flexibility that can help support the system to reduce load shedding when lines are de-energized. We investigate a coordinated transmission-distribution optimization problem that balances wildfire risk mitigation and load shedding. We model distribution systems that include battery energy storage systems which may support loads when transmission lines are de-energized. This multi-period integrated transmission-distribution optimal switching problem jointly optimizes line switching decisions, the generators' setpoints, load shedding, and the batteries' states of charge, resulting in significant computational challenges. To improve scalability, we decompose the problem over both space and time and apply a distributed optimization algorithm. Using a large-scale synthetic California test case with realistic distribution models and real wildfire risk data, we show that distributed optimization can solve large-scale multi-period switching problems that are otherwise intractable for centralized solvers. We also discuss challenges and future directions for improving the distributed algorithm's convergence performance as the number of time periods increases.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗
DOE OSTI2019

Highly Uniform Resistive Switching in HfO 2 Films Embedded with Ordered Metal Nanoisland Arrays

Memristors enter a critical developmental stage where emerging large-scale integration methods face major challenges with severe switching instabilities in the oxide layer. In this work, the superior uniformity is achieved within HfO 2 films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film-thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c-AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c-AFM nanotomography and cross-sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI-oxide interactions and overall switching performance.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

42 ENGINEERING↗