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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Basic mechanisms study for MIS solar cell structures on GaAs

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Fonash, S. J.↗
NASA NTRS1980

Measuring transmissivity of solar-cell covers

Apparatus uses simulated solar point source refracted by condensing lens to determine ratio of transmissivity of solar cell cover material to that of standard reference specimen.

Laue, E. G.↗
NASA NTRS1979

Development of High Efficiency (14%) Solar Cell Array Module

High efficiency solar cells required for the low cost modules was developed. The production tooling for the manufacture of the cells and modules was designed. The tooling consisted of: (1) back contact soldering machine; (2) vacuum pickup; (3) antireflective coating tooling; and (4) test fixture.

Iles, P. A.↗
NASA NTRS1978

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS1982

High voltage planar multijunction solar cell

A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

Evans, J. C., Jr.↗
NASA NTRS1982

Evaluation of electrode shape and nondestructive evaluation method for welded solar cell interconnects

Resistance welds of solar cell interconnect tabs were evaluated. Both copper-silver and silver-silver welds were made with various heat inputs and weld durations. Parallel gap and annular gap weld electrode designs were used. The welds were analyzed by light microscope, electron microprobe and scanning laser acoustic microscope. These analyses showed the size and shape of the weld, the relationship between the acoustic micrographs, the visible electrode footprint, and the effect of electrode misalignment. The effect of weld heat input on weld microstructure was also shown.

Baraona, C. R.↗
NASA NTRS1983

Results of the 1982 NASA/JPL balloon flight solar cell calibration program

The 1982 solar cell calibration balloon flight was successfully completed on July 21, meeting all objectives of the program. Twenty-eight modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Downing, R. G.↗
NASA NTRS1983

High voltage v-groove solar cell

A high voltage multijunction solar cell comprises a number of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.

Evans, J. C., Jr.↗
NASA NTRS1984

The future of high efficiency solar cells

Research approaches to obtain solar cell modules with 1 sun efficiencies of 20-30 percent at air mass 1 are now well understood. Such high efficiency modules should become available in the near future. It can be expected that these modules will be extensively used in terrestrial power generation, space power generation, and consumer electronics. To achieve practical module efficiencies significantly above 30 percent, it will be necessary to employ concepts other than spectral splitting, such as spectral compression and broad band detection. A major breakthrough in these areas is not anticipated at this time.

Fan, J. C. C.↗
NASA NTRS1984

Results of the 1984 NASA/JPL balloon flight solar cell calibration program

The 1984 solar cell calibration balloon flight was successfully completed on July 19, meeting all objectives of the program. Thirty-six modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Downing, R. G.↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗
NASA NTRS1985

A possible radiation-resistant solar cell geometry using superlattices

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, C.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1986

Results of the 1985 NASA/JPL balloon flight solar cell calibration program

The 1985 solar cell calibration balloon flight was successfully completed on July 12, 1985, meeting all objectives of the program. Fifty-seven modules were carried to an altitude of 115,000 ft (35.0 km). The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1987

Results of the 1987 NASA/JPL balloon flight solar cell calibration program

The 1987 solar cell calibration balloon flight was successfully completed on August 23, 1987, meeting all objectives of the program. Forty-eight modules were carried to an altitude of 120,000 ft (36.0 km). The cells calibrated can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1988

Results of the 1988 NASA/JPL balloon flight solar cell calibration program

The 1988 solar cell calibration balloon flight was successfully completed on August 7, 1988, meeting all objectives of the program. Forty-eight modules were carried to an altitude of 118,000 ft (36.0 km). The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗