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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

Nakatani, I.↗
NASA NTRS1993

Method for anisotropic etching in the manufacture of semiconductor devices

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Koontz, Steven L.↗
NASA NTRS1994

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Vasquez, Richard P.↗
NASA NTRS1994

A scanning defect mapping system for semiconductor characterization

We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design.

Sopori, Bushnan L.↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1994

Orbital processing of high-quality CdTe compound semiconductors

CdZnTe crystals were grown in one-g and in micro-g for comparative analysis. The two micro-g crystals were grown in the Crystal Growth Furnace during the First United States Microgravity Laboratory mission (USML-1). The samples were analyzed for chemical homogeneity, structural perfection, and optoelectronic performance (infrared transmission). Fourier Transform Infrared (FTIR) transmission of both ground and flight materials showed that the infrared transmission was close to theoretical, 63% versus 66%, suggesting that the material was close to the stochiometric composition during both the ground and flight experiments. Infrared microscopy confirmed that the principal precipitates were Te and their size (1-10 microns) and density suggested that the primary flight and ground base samples experienced similar cooling rates. Macrosegregation was predicted, using scaling analysis, to be low even in one-g crystals and this was confirmed experimentally, with nearly diffusion controlled growth achieved even in the partial mixing regime on the ground. Radial segregation was monitored in the flight samples and was found to vary with fraction solidified, but was disturbed due to the asymmetric grvitational and thermal fields experienced by the flight samples. The flight samples, however, were found to be much higher in structural perfection than the ground samples produced in the same furnace under identical growth conditions except for the gravitational level. Rocking curve widths were found to be substantially reduced, from 20/35 (one-g) to 9/20 (micro-g) for the best regions of the crystals. The full width at half maximum (FWHM) of 9 arc seconds is as good as the best reported terrestrially for this material. The ground samples were found to have a fully developed mosaic structure consisting of subgrains, whereas the flight sample dislocations were discrete and no mosaic substructure was evident. The defect density was reduced from 50-100,000 (one-g) to 500-25000 EPD (micro-g). These results were confirmed using rocking curve analysis, synchrotron topography, and etch pit analysis. The low dislocation density is thought to have resulted from the near-absence of hydrostatic pressure which allowed the melt to solidify with minimum or no wall contact, resulting in very low stress being exerted on the crystal during growth or during post-solidification cooling.

Larson, David J., Jr.↗
NASA NTRS1994

Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

Welser, R. E.↗
NASA NTRS1995

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗
NASA NTRS1994

Semiconductor-metal graded-index composite thin films for infrared applications

Theoretical/experimental studies have been carried out on germanium:silver (Ge:Ag) graded-index composite thin films which demonstrate that graded coatings, consisting of varied concentrations of Ag with respect to the Ge film thickness, exhibit different optical properties ranging from selective infrared (IR) reflectance to broadband IR absorptance. The graded coatings have been produced by dc magnetron cosputtering of Ge and Ag and the spectral properties are found to be stable against temperature. The coatings have been applied to an infrared tunnel sensor (micro-Golay cell) to improve the device performance.

Lamb, James L.↗
NASA NTRS1995

Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

Henderson, D. O.↗
NASA NTRS1995

Flight demonstration of flight termination system and solid rocket motor ignition using semiconductor laser initiated ordnance

Solid State Laser Initiated Ordnance (LIO) offers new technology having potential for enhanced safety, reduced costs, and improved operational efficiency. Concerns over the absence of programmatic applications of the technology, which has prevented acceptance by flight programs, should be abated since LIO has now been operationally implemented by the Laser Initiated Ordnance Sounding Rocket Demonstration (LOSRD) Program. The first launch of solid state laser diode LIO at the NASA Wallops Flight Facility (WFF) occurred on March 15, 1995 with all mission objectives accomplished. This project, Phase 3 of a series of three NASA Headquarters LIO demonstration initiatives, accomplished its objective by the flight of a dedicated, all-LIO sounding rocket mission using a two-stage Nike-Orion launch vehicle. LIO flight hardware, made by The Ensign-Bickford Company under NASA's first Cooperative Agreement with Profit Making Organizations, safely initiated three demanding pyrotechnic sequence events, namely, solid rocket motor ignition from the ground and in flight, and flight termination, i.e., as a Flight Termination System (FTS). A flight LIO system was designed, built, tested, and flown to support the objectives of quickly and inexpensively putting LIO through ground and flight operational paces. The hardware was fully qualified for this mission, including component testing as well as a full-scale system test. The launch accomplished all mission objectives in less than 11 months from proposal receipt. This paper concentrates on accomplishments of the ordnance aspects of the program and on the program's implementation and results. While this program does not generically qualify LIO for all applications, it demonstrated the safety, technical, and operational feasibility of those two most demanding applications, using an all solid state safe and arm system in critical flight applications.

Schulze, Norman R.↗
NASA NTRS1995

Semiconductor laser-based ranging instrument for earth gravity measurements

A laser ranging instrument is being developed to measure the spatial variations in the Earth's gravity field. It will range in space to a cube corner on a passive co-orbiting sub-satellite with a velocity accuracy of 20 to 50 microns/sec by using AlGaAs lasers intensity modulated at 2 GHz.

Abshire, James B.↗
NASA NTRS1994

Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

The sizing and efficiency of an aircraft is largely determined by the performance of its high-lift system. Subsonic civil transports most often use deployable multi-element airfoils to achieve the maximum-lift requirements for landing, as well as the high lift-to-drag ratios for take-off. However, these systems produce very complex flow fields which are not fully understood by the scientific community. In order to compete in today's market place, aircraft manufacturers will have to design better high-lift systems. Therefore, a more thorough understanding of the flows associated with these systems is desired. Flight and wind-tunnel experiments have been conducted on NASA Langley's B737-100 research aircraft to obtain detailed full-scale flow measurements on a multi-element high-lift system at various flight conditions. As part of this effort, computational aerodynamic tools are being used to provide preliminary flow-field information for instrumentation development, and to provide additional insight during the data analysis and interpretation process. The purpose of this paper is to demonstrate the ability and usefulness of a three-dimensional low-order potentialflow solver, PMARC, by comparing computational results with data obtained from 1/8 scale wind-tunnel tests. Overall, correlation of experimental and computational data reveals that the panel method is able to predict reasonably well the pressures of the aircraft's multi-element wing at several spanwise stations. PMARC's versatility and usefulness is also demonstrated by accurately predicting inviscid threedimensional flow features for several intricate geometrical regions.

Salem, Ali F.↗
NASA NTRS1995

High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

Duncan, Robert V.↗
NASA NTRS1997

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Physical Vapor Transport

Preliminary definition of all of the necessary materials, labor, services, and facilities necessary to provide science requirement definition, initiate hardware development activities, and provide an updated flight program proposal consistent with the NRA selection letter. The major tasks identified in this SOW are in the general category of science requirements determination, instrument definition, and updated flight program proposal. The Contractor shall define preliminary management, technical and integration requirements for the program, including improved cost/schedule estimates. The Contractor shall identify new technology requirements, define experiment accommodations and operational requirements and negotiate procurement of any long lead items, if required, with the government.

Su, Ching-Hua↗
NASA NTRS1997

Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

Crowe, Thomas W.↗
NASA NTRS1996

Electromagnetic Field Effects in Semiconductor Crystal Growth

This proposed two-year research project was to involve development of an analytical model, a numerical algorithm for its integration, and a software for the analysis of a solidification process under the influence of electric and magnetic fields in microgravity. Due to the complexity of the analytical model that was developed and its boundary conditions, only a preliminary version of the numerical algorithm was developed while the development of the software package was not completed.

Dulikravich, George S.↗
NASA NTRS1998

Reference Interferometer Using a Semiconductor Laser/LED Reference Source in a Cryogenic Fourier-Transform Spectrometer

A combination of a single mode AlGaAs laser diode and broadband LED was used in a Michelson interferometer to provide reference signals in a Fourier transform spectrometer, the Composite Infrared Spectrometer, on the Cassini mission to Saturn. The narrowband light from the laser produced continuous fringes throughout the travel of the interferometer, which were used to control the velocity of the scan mechanism and to trigger data sampling. The broadband light from the LED produced a burst of fringes at zero path difference, which was used as a fixed position reference. The system, including the sources, the interferometer, and the detectors, was designed to work both at room temperature and instrument operating temperature of 170 Kelvin. One major challenge that was overcome was preservation, from room temperature to 170 K, of alignment sufficient for high modulation of fringes from the broadband source. Another was the shift of the source spectra about 30 nm toward shorter wavelengths upon cooldown.

Martino, Anthony J.↗