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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Electrically Switched Ion Exchange Based on Carbon-Polypyrrole Composite Smart Materials for the Removal of ReO 4 – from Aqueous Solutions

A simple and rapid process of TcO4- (or ReO4-) separation from aqueous solutions based on electrically switched ion exchange (ESIX) method was presented in this study. Polypyrrole (PPy) functionalized activated carbon (AC) was served as an excellent electrically switched ion exchanger for ions removal. Physico- and electro-chemical characteristics show AC-PPy composite exhibited an excellent capacity for ReO4 - removal and high stability during 50 times potential cycling. Chronoamperometric studies show that the treatment of ESIX could be completed within 60 s, which sharply shorten the time of uptake and release of ions. X-ray photoelectron spectroscopy (XPS) confirmed the process of ReO4- removal in AC-PPy composite. The present work provides a promising method for radioactive anion removal in water treatment.

electrically switched ion exchange, activated carb↗
DOE OSTI2018

Formation of the Conducting Filament in TaO x -Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation

Here, the distribution of tantalum and oxygen ions in electroformed and/or switched TaO x -based resistive switching devices has been assessed by high-angle annular dark-field microscopy, X-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy. The experiments have been performed in the plan-view geometry on the cross-bar devices producing elemental distribution maps in the direction perpendicular to the electric field. The maps revealed an accumulation of +20% Ta in the inner part of the filament with a 3.5% Ta-depleted ring around it. The diameter of the entire structure was approximately 100 nm. The distribution of oxygen was uniform with changes, if any, below the detection limit of 5%. We interpret the elemental segregation as due to diffusion driven by the temperature gradient, which in turn is induced by the spontaneous current constriction associated with the negative differential resistance-type I–V characteristics of the as-fabricated metal/oxide/metal structures. A finite-element model was used to evaluate the distribution of temperature in the devices and correlated with the elemental maps. In addition, a fine-scale (~5 nm) intensity contrast was observed within the filament and interpreted as due phase separation of the functional oxide in the two-phase composition region. Understanding the temperature-gradient-induced phenomena is central to the engineering of oxide memory cells.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultrafast Switching of Interfacial Thermal Conductance

Dynamical control of thermal transport at the nanoscale provides a time-domain strategy for optimizing thermal management in nanoelectronics, magnetic devices, and thermoelectric devices. However, the rate of change available for thermal switches and regulators is limited to millisecond time scales, calling for a faster modulation speed. Here, in this work, time-resolved X-ray diffraction measurements and thermal transport modeling reveal an ultrafast modulation of the interfacial thermal conductance of an FeRh/MgO heterostructure as a result of a structural phase transition driven by optical excitation. Within 90 ps after optical excitation, the interfacial thermal conductance is reduced by a factor of 5 and lasts for a few nanoseconds, in comparison to the value at the equilibrium FeRh/MgO interface. The experimental results combined with thermal transport calculations suggest that the reduced interfacial thermal conductance results from enhanced phonon scattering at the interface where the lattice experiences transient in-plane biaxial stress due to the structural phase transition of FeRh. Our results suggest that optically driven phase transitions can be utilized for ultrafast nanoscale thermal switches for device application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗
DOE OSTI2018

Fixed switching frequency predictive control of an asymmetric source dual inverter system with a floating bridge for multilevel operation

In this study, we propose a modified modulated model predictive control (MMPC) scheme to control an open-end winding induction motor drive using an asymmetric source dual inverter with one floating bridge. The control algorithm uses a modulation algorithm within the cost function optimisation scheme to avoid variable switching frequency. The voltage of the floating capacitor is regulated utilising predefined redundant switching sequences as well as the voltage vector location is identified to improve calculation time. Lastly, the proposed MMPC scheme enhances the output performance with comparison to the model predictive control scheme. Experimental results are presented to verify theory and simulation results.

42 ENGINEERING↗
DOE OSTI2014

Dual-kind Q-switching of erbium fiber laser

Two different regimes of Q-switching in the same implementation of an actively Q-switched erbium-doped fiber laser are demonstrated. Depending on the active fiber length and repetition rate of an intracavity Q-cell (acousto-optic modulator), the laser operates either in the regime of common, rather long and low-power, pulses composed of several sub-pulses or in the one of very short and powerful stimulated Brillouin scattering-induced pulses. The basic physical reason of the laser system to oscillate in one of these two regimes is the existence or absence of CW narrow-line “bad-cavity” lasing in the intervals when the Q-cell is blocked.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A spin light emitting diode incorporating ability of electrical helicity switching

Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Single molecule tunneling spectroscopy investigation of reversibly switched dipolar vanadyl phthalocyanine on graphite

We report a spatially resolved scanning tunneling spectroscopy (STS) investigation of reversibly switchable dipolar vanadyl phthalocyanine (VOPc) on graphite by using low temperature scanning tunneling microscopy. VOPc molecule can be switched between O-up and O-down configurations by changing the polarity of the pulse voltage applied to the tip, actuated by the inelastic tunneling electrons. The spatially resolved STS measurements allow the identification of the electronic structures of VOPc with different dipole orientation. The present approach provides geometry images and electronic characterization of a molecular switch on surface spontaneously.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Passively Q-switching induced by the smallest single-walled carbon nanotubes

We report a passively Q-switched erbium-doped fiber laser (EDFL) by using the smallest single-walled carbon nanotubes (SWNTs) with a diameter of 0.3 nm as the saturable absorber. These small SWNTs are fabricated in the nanochannels of a ZnAPO-11 (AEL) single crystal. By inserting one of the AEL crystal into an EDFL cavity pumped by a 980 nm laser diode, stable passive Q-switching is achieved for a threshold pump power of 206.2 mW, and 4.73 μs pulses with a repetition rate of 41.78 kHz and an average output power of 3.75 mW are obtained for a pump power of 406 mW.

36 MATERIALS SCIENCE↗
DOE OSTI2014

All-optical switching in optically induced nonlinear waveguide couplers

We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Robust random number generation using steady-state emission of gain-switched laser diodes

We demonstrate robust, high-speed random number generation using interference of the steady-state emission of guaranteed random phases, obtained through gain-switching a semiconductor laser diode. Steady-state emission tolerates large temporal pulse misalignments and therefore significantly improves the interference quality. Using an 8-bit digitizer followed by a finite-impulse-response unbiasing algorithm, we achieve random number generation rates of 8 and 20 Gb/s, for laser repetition rates of 1 and 2.5 GHz, respectively, with a ±20% tolerance in the interferometer differential delay. We also report a generation rate of 80 Gb/s using partially phase-correlated short pulses. In relation to the field of quantum key distribution, our results confirm the gain-switched laser diode as a suitable light source, capable of providing phase-randomized coherent pulses at a clock rate of up to 2.5 GHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Perfect electrical switching of edge channel transport in HgTe quantum wells controlled by gate voltage

We present a proposal to realize a perfect electrical switching of topological edge-state transport in a HgTe quantum well (QW). In our device design, we place a strip-like top gate voltage in a conventional quantum-point-contact (QPC) region in the HgTe QW. The numerical calculations show that upon increasing the gate voltage, two new conductance channels are developed in the transport direction and just neighbouring the boundaries of the top gate. The quantum states in the new channels can couple with the edge states to open a gap in energy spectrum, and in turn the gap width can be adjusted by the gate voltage, indicating that switch-on/off of the edge channels can be manipulated in a controllable way. Our device can not only be considered as a development of the conventional QPC structure based on the HgTe QW but also provides a new route to realize topological electrical switchers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

High repetition rate Q-switched radially polarized laser with a graphene-based output coupler

We demonstrate a Q-switched radially polarized all-solid-state laser by transferring a graphene film directly onto an output coupler. The laser generates Q-switched radially polarized beam (QRPB) with a pulse width of 192 ns and 2.7 W average output power. The corresponding single pulse energy is up to 16.2 μJ with a high repetition rate of 167 kHz. The M{sup 2} factor and the polarization purity are ∼2.1 and 96%, respectively. Our QRPB source is a simple and low-cost source for a variety of applications, such as industrial material processing, optical trapping, and microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Self-induced gaseous plasma as high power microwave opening switch medium

Self-induced gaseous plasma is evaluated as active opening switch medium for pulsed high power microwave radiation. The self-induced plasma switch is investigated for N{sub 2} and Ar environments under pressure conditions ranging from 25 to 700 Torr. A multi-pass TE{sub 111} resonator is used to significantly reduce the delay time inherently associated with plasma generation. The plasma forms under the pulsed excitation of a 4 MW magnetron inside the central dielectric tube of the resonator, which isolates the inner atmospheric gas from the outer vacuum environment. The path from the power source to the load is designed such that the pulse passes through the plasma twice with a 35 ns delay between these two passes. In the first pass, initial plasma density is generated, while the second affects the transition to a highly reflective state with as much as 30 dB attenuation. Experimental data revealed that virtually zero delay time may be achieved for N{sub 2} at 25 Torr. A two-dimensional fluid model was developed to study the plasma formation times for comparison with experimental data. The delay time predicted from this model agrees well with the experimental values in the lower pressure regime (error < 25%), however, due to filamentary plasma formation at higher pressures, simulated delay times may be underestimated by as much as 50%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Abnormal bipolar resistive switching behavior in a Pt/GaO{sub 1.3}/Pt structure

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO{sub 1.3}/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗