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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Optical-based spectroscopic methods for measuring chemical, optical, and physical properties of thin polymer waveguide films

Non-destructive optical-based spectroscopic methods are needed for analyzing “real world” devices that consist of thin polymer waveguide films. Many applications (e.g., sensors, microelectronics, optics, and biomedical applications, etc.) utilize thin polymer waveguide films, and non-destructive characterization methods based on Fourier transform (FT)-plasmon waveguide spectroscopy (PWR) and scanning angle (SA) Raman spectroscopy are used to extract optical, physical, and chemical properties simultaneously. The FT-PWR method measures reflected light at polymer waveguide interface as both the incident frequency (wavelength) and incident angle are scanned. This method uses p- and s-polarized light to simultaneously extract the polymer waveguide thickness and apparent anisotropic indices of refraction. Polystyrene waveguide films ranging from 360 to 800 nm are used to demonstrate the method and it has an average 0.4% relative error when compared to profilometry and atomic force microscopy measurements. SA Raman spectroscopy is used to measure mixed waveguide polymer films consisting of polystyrene-block-poly(methyl methacrylate) and homopolymer poly(methyl methacrylate) (PS-b-PMMA:PMMA), and poly(2-vinylnapthalene)-block-poly(methyl methacrylate) (P2VN-b-PMMA). PMMA homopolymer is added to the PS-b-PMMA solutions to vary the chemical composition. The chemical composition of each mixed film is quantified (SA Raman peak amplitude ratios) and averaged over all incident angles and is termed the Raman amplitude ratio (rps). This parameter is used to calculate the refractive index of each mixed waveguide polymer film. The refractive index is an input parameter for sum square electric field (SSEF) calculations, which are used to model SA Raman spectra as a function of incident angle to extract the film thickness. The mixed polymer waveguide film thicknesses ranged from 495 to 971 nm, and the SA Raman spectroscopy method has an average 5% difference between the values determined by profilometry. The SA Raman spectroscopy method developed for mixed polymer waveguide films is used to measure the chemical composition and extract interface locations in bilayer and trilayer films consisting of PMMA/PS or PMMA/PS/PMMA, respectively. The rps value is averaged over angle ranges corresponding to waveguide mode 0 and waveguide mode 1 for the bilayer and trilayer films, respectively. Six multilayer films are analyzed and their total thicknesses range from 330 to 1260 nm. Iterative SSEF calculations are used to model the SA Raman spectra as a function of incident angle, and the best fit to the experimental data is used to extract the total thickness and interface location(s). The method has an axial spatial resolution of 7 to 80 nm and provides comparable values to films measured by profilometry with an average 8% and 7% difference for the bilayer and trilayer films, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Improved electrical properties of free standing blend polymer for renewable energy resources

Blend polymer electrolytes are prepared for salt concentration (Ö/Li = 4) with the constant ratio (0.5 gm) of PEO and PAN using solution casting technique. The prepared free standing solid polymeric film is characterized by Field Emission Scanning Electron Microscopy (FESEM) which confirms the homogeneous distribution of dissociated salt in blend polymer matrix. After addition of salt the ionic conductivity value is found to be of the order of 7.13 × 10{sup −5} Scm{sup −1} which is three orders higher when compared with pure blend polymer films. The microscopic interaction among the polymer-ion, ion-ion has been confirmed by the Fourier Transform Infrared (FTIR) Spectroscopy. A very fine correlation has been built in the electrical conductivity and FTIR result. On the basis of above finding, a prepared free standing solid polymeric film appears to be appropriate for the energy storage/conversion device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Tuning the Selectivity and Activity of Electrochemical Interfaces with Defective Graphene Oxide and Reduced Graphene Oxide

Engineered solid-liquid interfaces will play an important role in the development of future energy storage and conversion (ESC) devices. In the present study, defective graphene oxide (GO) and reduced graphene oxide (rGO) structures were used as engineered interfaces to tune the selectivity and activity of Pt disk electrodes. GO was deposited on Pt electrodes via the Langmuir-Blodgett technique, which provided compact and uniform GO films, and these films were subsequently converted to rGO by thermal reduction. Electrochemical measurements revealed that both GO and rGO interfaces on Pt electrodes exhibit selectivity toward the oxygen reduction reaction (ORR), but they do not have an impact on the activity of the hydrogen oxidation reaction in acidic environments. Scanning transmission electron microscopy at atomic resolution, along with Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), revealed possible diffusion sites for H 2 and O 2 gas molecules and functional groups relevant to the selectivity and activity of these surfaces. Based on these insights, rGO interfaces are further demonstrated to exhibit enhanced activity for the ORR in nonaqueous environments and demonstrate the power of our ex situ engineering approach for the development of next-generation ESC devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Fabrication of Nanoporous Alumina Ultrafiltration Membrane with Tunable Pore Size Using Block Copolymer Templates

Control over nanopore size and 3D structure is necessary to advance membrane performance in ubiquitous separation devices. Here, inorganic nanoporous membranes are fabricated by combining the assembly of cylinder-forming poly(styrene-block-methyl methacrylate) (PS-b-PMMA) block copolymer and sequential infiltration synthesis (SIS). A key advance relates to the use of PMMA majority block copolymer films and the optimization of thermal annealing temperature and substrate chemistry to achieve throughfilm vertical PS cylinders. The resulting morphology allows for direct fabrication of nanoporous AlOx by selective growth of Al2O3 in the PMMA matrix during the SIS process, followed by polymer removal using oxygen plasma. Control over the pore diameter is achieved by varying the number of Al2O3 growth cycles, leading to pore size reduction from 21 to 16 nm. 3D characterization, using scanning transmission electron microscopy tomography, reveals that the AlOx channels are continuous through the film and have a gradual increase in pore size with depth. Finally, the ultrafiltration performance of the fabricated AlOx membrane for protein separation as a function of protein size and charge is demonstrated.

block copolymers↗
DOE OSTI2016

Determination of density of states, conduction mechanisms and dielectric properties of nickel disulfide nanoparticles

Temperature and frequency dependent ac electrical measurements were used to explore density of states, conduction mechanisms and dielectric properties of nickel disulfide (NiS{sub 2}) nanoparticles. The NiS{sub 2} nanoparticles were prepared by conventional one step solid state reaction method at 250 °C. X-ray diffraction (XRD) confirmed cubic phase of prepared nanoparticles. Scanning electron microscope (SEM) images revealed presence of irregular shaped nanoparticles as small as 50 nm. The ac electrical measurements were carried out from 300 K to 413 K. Two depressed semicircular arcs from 20 Hz to 2 MHz showed presence of bulk and grain boundary phases in NiS{sub 2} nanoparticles at all temperatures. Small polaron hopping conduction from 300 K to 393 K and correlated barrier hopping conduction mechanism at temperatures higher than 393 K was observed. High value of density of states (of the order of 10{sup 24} eV{sup −1}cm{sup −3}) was calculated from ac conductivity. At low frequencies high values (of the order of 10{sup 4}-10{sup 7}) of real part of dielectric constant (ε′) were observed at different temperatures. These observations suggest that NiS{sub 2} nanoparticles may find applications in electronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Single-electron charge transfer into putative Majorana and trivial modes in individual vortices

Majorana bound states are putative collective excitations in solids that exhibit the self-conjugate property of Majorana fermions—they are their own antiparticles. In iron-based superconductors, zero-energy states in vortices have been reported as potential Majorana bound states, but the evidence remains controversial. Here, we use scanning tunneling noise spectroscopy to study the tunneling process into vortex bound states in the conventional superconductor NbSe 2 , and in the putative Majorana platform FeTe 0.55 Se 0.45 . We find that tunneling into vortex bound states in both cases exhibits charge transfer of a single electron charge. Our data for the zero-energy bound states in FeTe 0.55 Se 0.45 exclude the possibility of Yu–Shiba–Rusinov states and are consistent with both Majorana bound states and trivial vortex bound states. Our results open an avenue for investigating the exotic states in vortex cores and for future Majorana devices, although further theoretical investigations involving charge dynamics and superconducting tips are necessary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

High performance graphene-like thinly layered graphite based visible light photodetector

In this work, the drop casting method is utilized to obtain a thin graphene-like graphite layer as a photodetection layer on a SiO{sub 2}/Si substrate, and its performance is characterized to determine its potential use in commercial applications. The thin layer is formed by first synthesizing graphite soot from a butane flame before being turned into a liquid solution and drop-casted onto the substrate to form a thin graphene-like graphite film. Field emission scanning electron microscope and Raman vibrational mode analyses indicate that the fabricated graphene-like graphite layer has characteristics similar to the graphene. The graphene-like graphite photodetector demonstrates a narrow photoresponse from 530 to 680 nm, covering visible sources from green to red. The responsivity and external quantum efficiency of the device under the illumination of red laser 660 nm is found to be around 148 mA W{sup −1} and 27.8% respectively and is faster than that reported for similar systems using graphene and reduced graphene oxide previously. A fast response time of 83.7 and 28 µs at a modulation frequency of 1.0 and 10000 Hz respectively from the graphene-like thinly layered graphite photodetector shows potential application for the development of low-cost carbon-based photodetectors in near future.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

We investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2 /HfO 2 gate dielectrics. The measured activation energies for interface-trap charge buildup during negative-bias temperature stress are lower for SiGe channel pMOSFETs with SiO 2 /HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2 /HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce the strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2 /HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2 .

activation energy↗
DOE OSTI2023

Characterization of Annealing-Induced Phase Segregation in Composite Silicon Anodes for Li-ion Batteries

Silicon (Si) anodes present a promising alternative to graphite anodes for lithium-ion batteries (LIBs), as Si has a greater specific capacity. However, one major constraint is the volumetric change of Si during lithiation that results in an unstable solid-electrolyte interphase (SEI), so Si-containing electrodes require the use of various strategies to mitigate these effects and improve performance. One such solution is the use of Si nanoparticles (NPs) that maximize the surface area to volume ratio. Here, we discuss electrodes made with Si NPs treated with polyethylene oxide (PEO) (for improving dispersion during processing), conductive carbon NPs, and P84 polyimide binder which shows significant impacts of annealing treatment on improvements of active material utilization, first cycle efficiency, and capacity retention with extensive cycling . We used air-free argon ion polishing to create electrode cross sections and imaged through the electrode thickness using atomic force microscopy (AFM)-based nano-electrical characterization of scanning spreading resistance microscopy (SSRM), nano-mechanical characterizations of contact resonance and force volume (CR-FV), and scanning electron microscopy-based energy dispersive x-ray spectroscopy (SEM-EDS). Results show that the Si and conductive carbon segregate into phases with a distinctive carbon-rich banded morphology that surrounds the Si-rich phase during annealing. In pristine electrodes, the carbon- and SEI-rich bands exhibit a higher electronic conductivity and a lower elastic modulus than the Si active material phase. These structures, as well as distinct electronic and mechanical properties, remain during cycling, suggesting an improvement of electrical conduction pathways and a mechanical strain buffer for active Si material expansion during cycling. This phase separation may be a major factor in the improvement seen in electrochemical performance due to annealing. Additionally, our nm-scale and multi-mode characterizations provide a novel route for understanding and improving energy storage devices, which is advantageous due to the highly inhomogeneous of composite electrodes in nm-mm scales.

ENERGY STORAGE↗
DOE OSTI2020

Metallicity of 2H-MoS 2 induced by Au hybridization

Recent studies have shown that MoS 2 can undergo a structural phase transition from the 2H to 1T' phase on Au substrates at moderate temperatures. In this study, we use ultraviolet and x-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopy, and scanning tunneling microscopy/spectroscopy to probe the impact of annealing exfoliated, monolayer MoS 2 on Au. Our results across multiple length scales indicate that 2H-MoS 2 becomes hybridized with Au upon thermal annealing without inducing the 1T' structural phase and the bandgap can be modulated to zero width depending on the degree of hybridization. These results can be used to control the resistance of metal-MoS 2 contacts at the atomic scale without introduction of defects or structural phase transitions and are important for devices such as memristors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Electrochemical synthesis of p-Cu{sub 2}O/n-ZnO nanorods hetero-junction for photovoltaic application

Development of high performance visible light responsive solar cell materials has attracted wide interest due to their potential applications in the energy industries. In this work, ZnO nanorods films were successfully prepared on the ITO coated glass substrates via simple three electrode electrochemical deposition route. The Cu{sub 2}O nanoparticles were then electrodeposited on the surface of ZnO nanorods to form p-Cu{sub 2}O/n-ZnO core-shell hetero-structure. The synthesized ZnO, Cu{sub 2}O films and p-Cu{sub 2}O/n-ZnO hetero-structure were characterized by low angle x-ray diffraction, scanning electron microscopy, and UV-Visible spectrophotometer. Due to the hierarchical morphologies and core-shell structure, p-Cu{sub 2}O/n-ZnO hetero-structure shows a prominent visible-light-driven photocatalytic performance under the low intensity light irradiation. The obtained results suggest that it is possible to synthesize ZnO nanorods, Cu{sub 2}O films and p-Cu{sub 2}O/n-ZnO core-shell hetero-structure by a simple, cost effective and environment friendly electrodeposition process which can be useful for water splitting and solar cell device fabrication.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Sol-gel preparation and characterization of Er3+ doped TiO2 luminescent nanoparticles

Highlights: • Sol-gel derived Er{sup 3+} doped TiO{sub 2} nanoparticles for potential use in solar cells and bio imaging. • Influence of Er{sup 3+} doping into TiO{sub 2} with various Er{sup 3+} concentration on structural, optical, and luminescence properties. • Down-and up-conversion luminescence behaviour of Er{sup 3+} doped titanium dioxide. - Abstract: The present paper reports on down-and up-conversion luminescence behaviour of sol-gel derived erbium doped titanium dioxide with anatase structure. Through combined structural, optical and electron microscope analysis, effective and influence of Er{sup 3+} doping into TiO{sub 2} lattice has been demonstrated using X-Ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and optical reflectance spectra. XRD results showed only anatase diffraction peaks of TiO{sub 2}, indicating the formation of a pure anatase phase even after Er{sup 3+} incorporation into TiO{sub 2} lattice. Selected Area Electron Diffraction (SAED) confirmed that the synthesized TiO{sub 2} nanoparticles are polycrystalline in nature which correlated well with XRD findings. Upon excitation at 320 nm, two down-conversion contributions at 378 nm and 435 nm attributed to indirect band gap and defect-related emissions, respectively were observed from both pure and Er{sup 3+} doped TiO{sub 2} nanoparticles. On the other hand, strong green up-conversion emission centred at 544 nm ascribed to {sup 4}S{sub 3/2 }→ {sup 4}I{sub 15/2} transition of Er{sup 3+} was observed under 980 nm laser excitation for all Er{sup 3+} doped TiO{sub 2} samples. This result analysis brings insight on understanding of structural, optical and luminescence properties of Er{sup 3+} doped TiO{sub 2} nanoparticles for use in solar cells and bio imaging devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Topological Surface Superconductivity via Josephson Coupling in Bi 2 Te 3 /Nb

Since discoveries of protected conducting surface states, topological superconducting qubits have enchanted quantum science as prime elements in future fault-tolerant devices, particularly those based on Josephson junctions containing topological insulators. Still, Josephson coupling is often eclipsed by other proximity effects that can dilute topological superconducting pairing at the nontrivial insulator’s boundaries. Here, however, using an ultra-low-temperature scanning tunneling microscope, we detect Josephson physics in topological Bi 2 Te 3 films on superconducting Nb. At low temperatures, a previously undetected proximity gap varies little with Bi 2 Te 3 thickness and the density of states exhibits normal and superconducting components. Such observations are rationalized via Josephson pair tunneling through the (nearly) insulating Bi 2 Te 3 bulk, creating a rare, pure topological superconducting sheet. Our findings establish routes toward accessible topological superconducting states in qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Predicting strength distributions of MEMS structures using flaw size and spatial density

The populations of flaws in individual layers of microelectromechanical systems (MEMS) structures are determined and verified using a combination of specialized specimen geometry, recent probabilistic analysis, and topographic mapping. Strength distributions of notched and tensile bar specimens are analyzed assuming a single flaw population set by fabrication and common to both specimen geometries. Both the average spatial density of flaws and the flaw size distribution are determined and used to generate quantitative visualizations of specimens. Scanning probe-based topographic measurements are used to verify the flaw spacings determined from strength tests and support the idea that grain boundary grooves on sidewalls control MEMS failure. The findings here suggest that strength controlling features in MEMS devices increase in separation, i.e., become less spatially dense, and decrease in size, i.e., become less potent flaws, as processing proceeds up through the layer stack. The method demonstrated for flaw population determination is directly applicable to strength prediction for MEMS reliability and design.

Instruments & Instrumentation↗
DOE OSTI2014

Fabrication and local laser heating of freestanding Ni{sub 80}Fe{sub 20} bridges with Pt contacts displaying anisotropic magnetoresistance and anomalous Nernst effect

In spin caloritronics, ferromagnetic samples subject to relatively large in-plane temperature gradients ∇T have turned out to be extremely interesting. We report on a preparation technique that allows us to create freely suspended permalloy/Pt hybrid structures where a scanning laser induces ∇T on the order of a few K/μm. We observe both the anisotropic magnetoresistance at room temperature and the magnetic field dependent anomalous Nernst effect under laser heating. The technique is promising for the realization of device concepts considered in spin caloritronics based on suspended ferromagnetic nanostructures with electrical contacts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Experimental energy confinement time scaling with dimensionless parameters in C-Mod I-mode plasmas

The dependence of energy confinement time on gyroradius, β, and normalized collisionality in I-mode plasmas is investigated through dedicated C-Mod experiments scanning dimensionless parameters with constant safety factor. The gyroradius scaling is calculated to be Ω τE ∝ ρ * -3.9±1.5 , which suggests core transport may scale with gyro–Bohm physics, indicating favorable extrapolation of the I-mode regime to future devices at low ρ * . The scaling exponent for ν C is calculated to be small, but positive (Ω τE ∝ ν $^{0.44 ± 0.24}_{C}$), and the exponent for β is deemed inconclusive (Ω τE ∝ β 1.4±3.1 ) due to high correlation with the other two dimensionless variables in the dataset, and therefore requires further investigation. The individual dimensionless parameter scaling is compared to calculations from larger C-Mod I-mode datasets as well as multi-machine scaling laws for ELMy H-mode and L-mode plasmas. Finally, multiple regression techniques and principal component analysis are used to clarify the single parameter scalings and analyze parameter significance within the dataset.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

In situ characterization of two unknown ultrashort laser pulses using four-wave mixing in gas

Accurate characterization of two ultrashort laser pulses is of great interest in many ultrafast pump-probe experiments. We demonstrate a method based on four-wave mixing (FWM) in a gas which could be easily implemented into many existing pump-probe setups with minimal modifications for accurate, in situ characterization of both unknown pulses. This technique is tested on pairs of unknown pulses at wavelengths of 400/800 nm, and 266/400 nm. We measured the spectrogram of the pulse generated through FWM of the two unknown pulses by scanning the delay between two unknown pulses. The retrieval algorithm converges to accurately predict the intensity and the phase profiles of both unknown pulses with a trace error of < 1% and the accuracy is verified using an independent pulse characterization device.

Nambu, Noa (ORCID:0000000197303400)↗
DOE OSTI2018

Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn 1-x Ga x Se 2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This approach, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., >100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices.

14 SOLAR ENERGY↗