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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗
NASA NTRS1976

Radiative cooling of a low-density plasma

The paper extends and improves the radiative cooling coefficient calculations of Cox and Tucker (1969) and Cox and Daltabuit (1971) for a low-density optically thin plasma with no molecules or dust, of cosmic abundances in the range from 10,000 to 100,000,000 K. Earlier rates applied to a plasma containing H, He, C, N, O, Ne, Mg, Si, and S; the present study added Ca, Fe, and Ni. For the elements included, many individual lines are calculated which previously has been averaged together. The cooling processes considered are permitted, forbidden, and semiforbidden line transitions, including contributions from dielectronic recombination and bremsstrahlung, radiative recombination, and two-photon continua. The ionization balance is calculated in collisional equilibrium using an approximate auto-ionization following inner-shell excitation and the low-density limit for the dielectronic recombination rate. Cooling in various observational bands in the soft X-ray region is determined.

Raymond, J. C.↗
NASA NTRS1976

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗
NASA NTRS1977

Experimental and theoretical investigation for the suppression of the plasma arc drop in the thermionic converter

Ion generation and recombination mechanisms in the cesium plasma as they pertain to the advanced mode thermionic energy converter were studied. The decay of highly ionized cesium plasma was studied in the near afterglow to examine the recombination processes. Very low recombination in such a plasma may prove to be of considerable importance in practical converters. The approaches of external cesium generation were vibrationally excited nitrogen as an energy source of ionization of cesium ion, and microwave power as a means of resonant sustenance of the cesium plasma. Experimental data obtained so far show that all three techniques - i.e., the non-LTE high-voltage pulsing, the energy transfer from vibrationally excited diatomic gases, and the external pumping with a microwave resonant cavity - can produce plasmas with their densities significantly higher than the Richardson density. The implication of these findings as related to Lam's theory is discussed.

Shaw, D. T.↗
NASA NTRS1977

The characteristics of sealed nickel-cadmium cells during voltage reversal

A mechanism which allows a cell voltage reversal in a nickel cadmium battery are discussed. The effects of reconditioning and the characteristics of Ni-Cd cells during voltage reversal at low overdischarge rates are outlined. Graphs are presented for: (1) hydrogen pressure decay-effect of state of charge (open circuit stand); (2) hydrogen pressure increase during overdischarge; (3) hydrogen pressure decay-effect of temperature (cells terminals connected through resistors); (4) cell, positive and negative electrode voltage during reversal when reconditioning a 13 cell-24-Ah battery pack through a 40 Omega resistor; (5) pressure discharge current and recombination current during voltage reversal when reconditioning a 13 cell-24-Ah battery pack through a 40 Omega resistor; (6) theoretical hydrogen gas pressure if there were no recombination; and (7) effect of hydrogen pressure on recombination rate during overcharge.

Ritterman, P. F.↗
NASA NTRS1979

The Balmer 9 and Balmer 11 lines of He II in the sun

The Balmer 9 and 11 lines of He II at 959 A and 942 A in solar spectra are identified. These lines are produced mainly by recombination following photoionization of He II by coronal XUV radiation. From analysis of the line intensities, the theoretical model of Avrett et al. (1976), is confirmed where it was found that an appreciable amount of He (2+) is present at temperatures of 1 - 2 x 10 to the 4th K and that the anomalously strong He II 304 line is produced primarily by collisional excitation. The suggestion of Kohl (1977) that the photoionization-recombination process is more important in active regions than in the quiet sun is confirmed, and we find that the 304-A line is produced largely by recombination in solar flares.

Raymond, J. C.↗
NASA NTRS1981

Free radical propulsion concept

The concept of a free radical propulsion system, utilizing the recombination energy of dissociated low molecular weight gases to produce thrust, is analyzed. The system, operating at a theoretical impulse with hydrogen, as high as 2200 seconds at high thrust to power ratio, is hypothesized to bridge the gap between chemical and electrostatic propulsion capabilities. A comparative methodology is outlined by which characteristics of chemical and electric propulsion for orbit raising mission can be investigated. It is noted that free radicals proposed in rockets previously met with difficulty and complexity in terms of storage requirements; the present study proposes to eliminate the storage requirements by using electric energy to achieve a continuous-flow product of free radicals which are recombined to produce a high velocity propellant. Microwave energy used to dissociate a continuously flowing gas is transferred to the propellant via three-body-recombination for conversion to propellant kinetic energy. Microwave plasma discharge was found in excess of 90 percent over a broad range of pressure in preliminary experiments, and microwave heating compared to electrothermal heating showed much higher temperatures in gasdynamic equations.

Hawkins, C. E.↗
NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗
NASA NTRS1982

The ultraviolet excess of Seyfert 1 galaxies and quasars

A sharp rise from 4000 to 3650 A in the excess flux was obtained when a power-law determined in the red and infrared was subtracted from IR-optical-UV composite spectra of eight Seyfert 1 galaxies and quasars to measure UV excess. The excess is produced by Balmer continuum emission which, relative to H-alpha, is greater than the prediction of Case B recombination by a factor of 1.5-2.5. An additional component from 5000 A to the far-UV was found when the spectra were fitted with combinations of power-law and hydrogen recombination continua. The component is well described by a blackbody at a single temperature ranging from 20,000 to 30,000 K. All of the observed spectra were producible with combinations of power-law, recombination and blackbody emission, and all of the objects in the sample were found to have a power-law component with a slope of -1.1 + or - 0.1.

Malkan, M. A.↗
NASA NTRS1981

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗
NASA NTRS1983

The problem of cooling the cold Io torus

Two models are developed for the transport of ions inward from Io's orbit, the first using the assumption that radial diffusion is the dominant transport mechanism while the second uses a combination of diffusive and convective transport. The models include thermal and number density transport, radiation, ionization and pickup of local neutrals, recombination, charge exchange, and Coulomb interactions. It is found that pure diffusive transport can account for the dramatic inward depletion of the torus only by invoking recombination or by postulating a massive increase in the production rate of torus ions sometime prior to the Voyager mission. Recombination is determined to be far too slow to be the cause of the observed density decrease inside of Io. The model combining convection and diffusion is shown to reasonably match the data, but only if a diffusion coefficient 100 times less than that derived from Pioneer observations is used. In addition, it is shown that the Pioneer derived diffusion rate combined with Voyager temperature and density measurements indicate a large nonradiative sink of energy in the inner torus.

Richardson, J. D.↗
NASA NTRS1984

Theoretical studies of X-ray emission from supernova remnants and other non-equilibrium astrophysical plasmas

To improve the accuracy of thermal X-ray emission spectrum predictions, new computations of electron excitation rates, dielectric recombination rates, and updated codes were applied to existing data on supernova remnants and O star winds. Because of its general predominance along with low ionization and recombination rates, Fe(XVII) was analyzed with the inclusion of resonances to the excitation rate data. Corrections to the existing dielectric recombination rates based on detailed Fe (XVII) calculations and the more approximate Quantum Defect Method were accomplished. by using Distorted Wave ionization rates and reliable excitation rates, models for X-ray, ultraviolet, and optical emission line intensities of non-radiative shock wave can be constructed that supply data on shock velocity, preshock ionization states, and elemental abundances. The radiative driving force that drives the shock wave is calculated through line opacities of the shocked gas. X-ray emission spectra are also calculated for O star winds.

Dupree, A. K.↗
NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗
NASA NTRS1986

Theoretical analysis of isotope effects on ozone formation in oxygen photochemistry

In situ measurements of stratospheric ozone and laboratory studies of ozone production in electric discharge through oxygen have shown previously that ozone containing heavy isotopes of oxygen (O-17, O-18) may be formed preferentially. In order to assess the relevance of thee latter experiment to the stratospheric measurements, detailed understanding of the effect of isotopic substitution on the O3 formation reaction O + O2 + M yields O3 + M and on the O atom exchange reaction O + O2 + O yields O2 + O is necessary. In this work, an estimate of the effect of isotopic substitution on the recombination rate is made by us of approximate dynamical theories and statistical mechanics. The results indicate the possibility of isotope effects on the O + O2 recombination rate of the order of several percent at stratospheric temperatures. In general, recombination reactions involving heavy (mass 49, 50) O3 formation are found to be slower than the reaction leading to normal (mass 48) O3 formation. The calculated isotope effects are sufficiently small that the uncertainties in the model input and the approximations in the dynamical theories will probably make the quantitative nature of these results subject to considerable uncertainty. This isotope effect should not be observable in the atmosphere given the precision of the current measurements but may be crucial in the understanding of the laboratory experiments, where observed enhancements are only of the order of several percent. Possible reasons for this discrepancy between the observed enhancement and predicted depletion are presented.

Kaye, J. A.↗
NASA NTRS1987

A Surface-Controlled Solar Cell

Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.

Daud, T.↗
NASA NTRS1986

Novel measurement techniques (development and analysis of silicon solar cells near 20% effciency)

Work in identifying, developing, and analyzing techniques for measuring bulk recombination rates, and surface recombination velocities and rates in all regions of high-efficiency silicon solar cells is presented. The accuracy of the previously developed DC measurement system was improved by adding blocked interference filters. The system was further automated by writing software that completely samples the unkown solar cell regions with data of numerous recombination velocity and lifetime pairs. The results can be displayed in three dimensions and the best fit can be found numerically using the simplex minimization algorithm. Also described is a theoretical methodology to analyze and compare existing dynamic measurement techniques.

Wolf, M.↗
NASA NTRS1987

Catalysts for long-life closed-cycle CO2 lasers

Long-life, closed-cycle operation of pulsed CO2 lasers requires catalytic CO-O2 recombination both to remove O2, which is formed by discharge-induced CO2 decomposition, and to regenerate CO2. Platinum metal on a tin (IV) oxide substrate (Pt/SnO2) has been found to be an effective catalyst for such recombination in the desired temperature range of 25 to 100 C. This paper presents a description of ongoing research at NASA-LaRC on Pt/SnO2 catalyzed CO-O2 recombination. Included are studies with rare-isotope gases since rare-isotope CO2 is desirable as a laser gas for enhanced atmospheric transmission. Results presented include: (1) achievement of 98% to 100% conversion of a stoichiometric mixture of CO and O2 to CO2 for 318 hours (greater than 1 x 10 to the 6th power seconds), continuous, at a catalyst temperature of 60 C, and (2) development of a technique verified in a 30-hour test, to prevent isotopic scrambling when CO-18 and O-18(2) are reacted in the presence of a common-isotope Pt/Sn O-16(2) catalyst.

Schryer, David R.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗