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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗
DOE OSTI2021

Ligand assisted growth of perovskite single crystals with low defect density

A low defect density in metal halide perovskite single crystals is critical to achieve high performance optoelectronic devices. Here we show the reduction of defect density in perovskite single crystals grown by a ligand-assisted solution process with 3-(decyldimethylammonio)-propane-sulfonate inner salt (DPSI) as an additive. DPSI ligands anchoring with lead ions on perovskite crystal surfaces not only suppress nucleation in solution, but also regulate the addition of proper ions to the growing surface, which greatly enhances the crystal quality. The grown CH 3 NH 3 PbI 3 crystals show better crystallinity and a 23-fold smaller trap density of 7 × 10 10 cm -3 than the optimized control crystals. The enhanced material properties result in significantly suppressed ion migration and superior X-ray detection sensitivity of CH 3 NH 3 PbI 3 detectors of (2.6 ± 0.4) × 10 6 µC Gy -1 air cm -2 for 60 kVp X-ray and the lowest detectable dose rate reaches (5.0 ± 0.7) nGy s -1 , which enables reduced radiation dose to patients in medical X-ray diagnostics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Chemically Stable Polyarylether-Based Metallophthalocyanine Frameworks with High Carrier Mobilities for Capacitive Energy Storage

Covalent organic frameworks (COFs) with efficient charge transport and exceptional chemical stability are emerging as an import class of semiconducting materials for opto-/electronic devices and energy-related applications. However, the limited synthetic chemistry to access such materials and the lack of mechanistic understanding of carrier mobility greatly hinder their practical applications. Herein, we report the synthesis of three chemically stable polyarylether-based metallophthalocyanine COFs (PAE-PcM, M = Cu, Ni, and Co) and facile in situ growth of their thin films on various substrates (i.e., SiO 2 /Si, ITO, quartz) under solvothermal conditions. We show that PAE-PcM COFs thin films with van der Waals layered structures exhibit p -type semiconducting properties with the intrinsic mobility up to ~19.4 cm 2 V -1 s -1 and 4 orders of magnitude of increase in conductivity for PAE-PcCu film (0.2 S m -1 ) after iodine doping. Density functional theory calculations reveal that the carrier transport in the framework is anisotropic, with the out-of-plane hole transport along columnar stacked phthalocyanine more favorable. Furthermore, PAE-PcCo shows the redox behavior maximumly contributes ~88.5% of its capacitance performance, giving rise to a high surface area normalized capacitance of ~19 μF cm -2 . Overall, this work not only offers fundamental understandings of electronic properties of polyarylether-based 2D COFs but also paves the way for their energy-related applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.

CMOS↗
NASA NTRS1998

Measurements of the Plasma Parameters and Low Frequency Oscillations in the Fisk Plasma Source

A new plasma device, the Fisk Plasma Source (FPS), has been developed at Fisk University. This plasma device is used to study the physics of low temperature plasmas and plasma-material interactions. The FPS device is a stainless steel vacuum 6-way cross vacuum vessel with at 10-inch inner diameter. Low temperature argon plasmas are generated using DC glow discharge and thermionic filament techniques. Spatial profiles of the plasma density, plasma potential, and electron temperature are measured using Langmuir probes. We present initial experimental measurements of density and temperature profiles in the FPS device. Experimental and theoretical studies of low frequency oscillations observed in the FPS device are also presented.

Thomas, Edward, Jr.↗
NASA NTRS2000

A New High Efficiency Segmented Thermoelectric Unicouple

To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices. However, no single thermoelectric material is suitable for use over a very wide range of temperatures (approx. 300 - 1000 K). It is therefore necessary to use different materials in each temperature range where they possess optimum performance. This can be achieved in two ways: 1) multistage thermoelectric generators where each stage operates over a fixed temperature difference and is electrically insulated but thermally in contact with the other stages and 2) segmented generators where the p- and n-legs are formed of different segments joined in series. The concept of integrating new thermoelectric materials developed at the Jet Propulsion Laboratory (JPL) into a segmented thermoelectric generator has been presented in detail in earlier publications . This new generator is expected to operate over a 300-973 K temperature difference and will use novel segmented legs based on a combination of state-of-the-art thermoelectric materials and novel p-type Zn4Sb3, p-type CeFe4Sb12-based alloys and n-type CoSb3-based alloys. An increase in the conversion efficiency of about 60% is expected compared to conventional Bi2Te3- and PbTe-based generators. We present in this paper the latest experimental results from the bonding studies between the different segments of the p-legs, n-legs, and p-leg to n-leg interconnect. Evaluation of the bond quality was done by measuring the contact resistance across the joints as well as by detailed microstructure investigations to reveal any potential interdiffusion. Among the materials investigated as inter-layers between the different segments of the legs, Pd-Ag joining alloys have been found to provide mechanically stable and low electrical resistance bonds.

Caillat, T.↗
NASA NTRS2005

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Niedra, Janis M.↗
NASA NTRS2005

Some Improvements in H-PDLCs

Some improvements have been made in the formulation of holographically formed polymer-dispersed liquid crystals (H-PDLCs) and in the fabrication of devices made from these materials, with resulting improvements in performance. H-PDLCs are essentially volume Bragg gratings. Devices made from H-PDLCs function as electrically switchable reflective filters. Heretofore, it has been necessary to apply undesirably high drive voltages in order to switch H-PDLC devices. Many scientific papers on H-PDLCs and on the potential utility of H-PDLC devices for display and telecommunication applications have been published. However, until now, little has been published about improving quality control in synthesis of H-PDLCs and fabrication of H-PDLC devices to minimize (1) spatial nonuniformities within individual devices, (2) nonuniformities among nominally identical devices, and (3) variations in performance among nominally identical devices. The improvements reported here are results of a research effort directed partly toward solving these quality-control problems and partly toward reducing switching voltages. The quality-control improvements include incorporation of a number of process controls to create a relatively robust process, such that the H-PDLC devices fabricated in this process are more nearly uniform than were those fabricated in a prior laboratory-type process. The improved process includes ultrasonic mixing, ultrasonic cleaning, the use of a micro dispensing technique, and the use of a bubble press.

Crawford, Gregory P.↗
DOE OSTI2020

Development of the Mobile Systems for Conditioning of Disused Sealed Radioactive Sources in Serbia - 20105

Sealed radioactive sources (SRS) are being used worldwide in the field of medicine, agriculture, industry and research. They can be found in mobile as well as stationary devices. SRS contains radioactive material that is (a) permanently sealed in a capsule or (b) closely bounded and in a solid form. The capsule or material of an SRS should be strong enough to maintain leak tightness under the conditions of use and purpose for which the source was designed, also in case of accidents. In this case only emitted radiation is utilized. Firstly, the hazard from external radiation has to be considered, but the possibility of contamination due to fracture of the capsule should not be disregarded. The radioactive sources are composed of the radiating isotope contained in the filling medium, the single or double isotope holder that partially or totally surrounds the filling medium, the outer cover that contains the parts mentioned above and the capsule closed airtightly by welding or using some other method. The capsule must be tested for leakage periodically. If the SRS is no longer needed (e.g. replaced by a different technique) or it becomes useless for the intended application (e.g. the activity becomes too weak, the equipment containing the source works poorly or becomes obsolete, the source is damaged or leaking) it is considered disused. Disused sealed radioactive sources (DSRS) are typically conditioned and disposed if a facility is available. If the disposal option is not available, conditioned DSRS should be stored under proper conditions. In some cases, the radionuclide(s) in DSRS can be recovered/recycled or the DSRS can be repurposed for other applications. Conditioning of DSRS ensures containment of the radioactive material, provides confinement for leaking sources, provides sufficient radiation shielding, reduces storage/disposal volume by allowing consolidation of multiple sources into a single storage/disposal container, facilitates transport operations and contributes to safety and security as well. Typically, conditioning technologies are deployed either as permanently installed stationary systems in centralized or mobile on-site waste processing facilities, or in a mobile configuration. Centralized stationary facilities provide a single processing location for multiple users that requires transport of the waste to the facility. On the other hand, mobile systems may be provided for the selection and application of the optimum technology for a specific waste stream (such as DSRS) by bringing the process to the point where the waste is generated. In addition, mobile systems could offer additional flexibility by sharing equipment among multiple waste generating sites for processing campaigns that vary in duration, from very short periods to several years. The term 'mobile processing system' refers to any radioactive waste processing system or component which is designed to be transportable and which is not considered permanently installed. Two mobile system for conditioning of disused sealed radioactive sources are developed in the Public Company Nuclear Facilities of Serbia. Development of these mobile systems was supported by SRB9005 national project via Technical Cooperation of the IAEA. The first mobile system, built inside the 20 feet ISO container, will be used for conditioning of DSRS category 3 to 5. The second mobile system, built inside the 7 m long vehicle (Iveco Daily Van), will be used for dismantling of ionizing smoke detectors mostly with Am-241 sources. Designs of the mobile systems were defined in cooperation with two companies from Belgium (Belgoprocess and Leniko) and a Croatian company Ekoteh as well as with the support of the IAEA experts. The generic safety assessment and operational procedures for the mobile systems are developed. Based on safety assessment the acceptance criteria and operational limits and conditions are established. Operational procedures include: (a) equipment and material requirements, (b) assembling procedure of the mobile unit, (c) procedure for acceptance of devices for dismantling and conditioning, (d) dismantling procedure for devices to recover the DSRS, (e) characterization of DSRS, (f) encapsulation procedure of DSRS, (g) disassembling procedure of the mobile unit, and (h) keeping records, identification and traceability. In addition, radiation safety, health safety, security and emergency preparedness plans are prepared. The generic safety assessment and operational procedures could be updated with site specific requirements, DSRS inventory, and different needs for future customers. Developed mobile systems could be used in all situations when it is feasible to perform conditioning of DSRS on the spot in the county and worldwide. Development of these mobile units was just the first step to create the Reference Center for Radioactive Waste Treatment and Disused Radioactive Sources Conditioning for Small Facilities which can become a regional training center in the future, and/or as a tool for comprehensive national search and secure programmes. In the next phases development of e-learning platforms and blended learning packages as well as application for the IAEA Qualified Technical Centre (QTC) for the management of DSRS is foreseen. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2025

Autonomous Aerosol and Plasma Co‐Jet Printing of Metallic Devices at Ambient Temperature

Abstract Additive manufacturing of metallic materials holds the potential to revolutionize the fabrication of functional devices unattainable via traditional methods. Despite recent advancements, printing metallic materials typically requires thermal processing at elevated temperatures to form dense structures with desired properties, which presents a major challenge for direct printing and integration with temperature‐sensitive materials. Herein, a unique co‐jet printing (CJP) method is reported integrating an aerosol jet and a non‐thermal, atmospheric pressure plasma jet to enable concurrent aerosol deposition of metal nanoparticle inks and in situ sintering at ambient temperature. A machine learning algorithm is integrated with the CJP to perform real‐time defect detection and autonomous correction, enhancing the yield of printed films with high electrical conductivity from 44% to 94%. Concurrent printing and sintering eliminate the need for post‐printing processing, reducing the overall manufacturing time by multiple folds depending on product size. CJP enables direct printing of functional devices on a variety of temperature‐sensitive materials including biological materials. Direct printing of hydration sensors on living plant leaves is demonstrated for long‐duration monitoring of hydration level in the plant. The versatile CJP method opens tremendous opportunities to harmoniously integrate abiotic and biotic materials for emerging applications in wearable/implantable devices and biohybrid systems.

Du, Yipu [Department of Aerospace and Mechanical E↗
NASA NTRS1992

Focal plane arrays for submillimeter waves using two-dimensional electron gas elements: A grant under the Innovative Research Program

This final report describes a three-year research effort, aimed at developing new types of THz low noise receivers, based on bulk effect ('hot electron') nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. 2DEG hot electron mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers, which use bulk InSb. The 2DEG mixers employ a new mode of operation, which was invented during this program. Only moderate cooling is required for this mode, to temperatures in the range 20-77 K. Based on the results of this research, it is now possible to design a hot electron mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000K. In our work on this grant, we have found similar results the the Cronin group (resident at the University of Bath, UK). Neither group has so far demonstrated heterodyne detection in this mode, however. We discovered and explored some new effects in the magnetic field mode, and these are described in the report. In particular, detection of 94 GHz and 238 GHz, respectively, by a new effect, 'Shubnikov de Haas detection', was found to be considerably stronger in our materials than the cyclotron resonance detection. All experiments utilized devices with an active 2DEG region of size of the order of 10-40 micrometers long, and 20-200 micrometers wide, formed at the heterojunction between AlGaAs and GaAs. All device fabrication was performed in-house. The materials for the devices were also grown in-house, utilizing OMCVD (Organo Metallic Chemical Vapor Deposition). In the course of this grant, we developed new techniques for growing AlGaAs/GaAs with mobilities equalling the highest values published by any laboratory. We believe that the field of hot electron mixers and detectors will grow substantially in importance in the next few years, partly as a result of the opportunity given us through this grant, which represents the major effort in the US so far. We note, however, that parallel research on hot electron mixers in thin film superconductors in Russia, and recently in Sweden, have demonstrated mixing up to 1 THz, with the potential for low-noise receivers for frequencies up to many THz. The three groups recently assessed the relative adtantages of 2DEG and superconducting film mixers in a joint paper (Kollberg et al., 1992; see Appendix II).

Yngvesson, K. Sigfrid↗
DOE OSTI2020

Triple ionic–electronic conducting oxides for next-generation electrochemical devices

Triple ionic–electronic conductors (TIECs) are materials that can simultaneously transport electronic species alongside two ionic species. The recent emergence of TIECs provides intriguing opportunities to maximize performance in a variety of electrochemical devices, including fuel cells, membrane reactors and electrolysis cells. However, the potential application of these nascent materials is limited by lack of fundamental knowledge of their transport properties and electrocatalytic activity. The goal of this Review is to summarize and analyse the current understanding of TIEC transport and electrochemistry in single-phase materials, including defect formation and conduction mechanisms. In this work, we particularly focus on the discovery criteria (for example, crystal structure and ion electronegativity), design principles (for example, cation and anion substitution chemistry) and operating conditions (for example, atmosphere) of materials that enable deliberate tuning of the conductivity of each charge carrier. Lastly, we identify important areas for further advances, including higher chemical stability, lower operating temperatures and discovery of n-type TIEC materials.

25 ENERGY STORAGE↗
DOE OSTI2025

Halide perovskite-polymer composite film for bright and stable light-emitting devices

Stability is the primary hindrance for the application of halide perovskite material in light-emitting devices, solar cells, and other devices. In this work, halide perovskite and polymer composite film have been prepared for stable and bright light-emitting devices. Pure-phase Cs4PbBr6 crystals have been synthesized, and their photoluminescence (PL) properties and fluorescence lifetimes have been investigated. The Cs 4 PbBr 6 crystals exhibited high uniformity but underwent rapid photodegradation under light irradiation. To address this issue, we prepared bright light-emitting devices using composite of Cs 4 PbBr 6 crystals and polyethylene oxide (PEO) as the emission layer. The aim was to improve the optical and physical properties of halide perovskites, such as photodegradation and stability. PEO, with its excellent film-forming ability, created a uniform and dense film on the halide perovskite surface, filling microscopic defects and providing a protective barrier. FTIR, morphology, and PL analyses confirmed the protective role of the halide perovskite and polymer composite film. The composite film light-emitting devices demonstrated improved stability and higher PL brightness, with a peak brightness approaching 3 × 10 8 cd/m 2 , which was approximately 75% higher than the pure halide perovskite devices.

Composite film↗
NASA NTRS1988

Proposal for a lunar tunnel-boring machine

A need exists for obtaining a safe and habitable lunar base that is free from the hazards of radiation, temperature gradient, and micrometeorites. A device for excavating lunar material and simultaneously generating living space in the subselenian environment was studied at the conceptual level. Preliminary examinations indicate that a device using a mechanical head to shear its way through the lunar material while creating a rigid ceramic-like lining meets design constraints using existing technology. The Lunar Tunneler is totally automated and guided by a laser communication system. There exists the potential for the excavated lunar material to be used in conjunction with a surface mining process for the purpose of the extraction of oxygen and other elements. Experiments into lunar material excavation and further research into the concept of a mechanical Lunar Tunneler are suggested.

Allen, Christopher S.↗
DOE OSTI2023

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Energetic Control of Redox-Active Polymers toward Safe Organic Bioelectronic Materials

Avoiding faradaic side reactions during the operation of electrochemical devices is important to enhance the device stability, to achieve low power consumption, and to prevent the formation of reactive side-products. This is particularly important for bioelectronic devices, which are designed to operate in biological systems. While redox-active materials based on conducting and semiconducting polymers represent an exciting class of materials for bioelectronic devices, they are susceptible to electrochemical side-reactions with molecular oxygen during device operation. In this work, electrochemical side reactions with molecular oxygen are shown to occur during organic electrochemical transistor (OECT) operation using high-performance, state-of-the-art OECT materials. Depending on the choice of the active material, such reactions yield hydrogen peroxide (H 2 O 2 ), a reactive side-product, which may be harmful to the local biological environment and may also accelerate device degradation. A design strategy is reported for the development of redox-active organic semiconductors based on donor–acceptor copolymers that prevents the formation of H 2 O 2 during device operation. This study elucidates the previously overlooked side-reactions between redox-active conjugated polymers and molecular oxygen in electrochemical devices for bioelectronics, which is critical for the operation of electrolyte-gated devices in application-relevant environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing

Amorphous In-Zn-O (a-IZO) thin films are among the most promising transparent conducting materials. Applications of a-IZO include thin film transistors for display technology and photovoltaic devices. However, the use of this material in practical devices has been impeded by limitations in our understanding of the relationship between a-IZO film structure and electrical properties. Here, we use in situ X-ray reflectivity to provide experimental evidence for a vertically heterogeneous, thermally induced structural relaxation that had been predicted for amorphous oxide films but not previously observed. The structural relaxation is shown to be dependent on the thermal annealing environment. Complementary in situ current-voltage curves and ex situ Van der Pauw measurements further show that thermal annealing also influences the electrical performance of the films. Here our results suggest that both oxygen uptake and structural relaxation contribute to the reduction in free carriers within a-IZO films during postdeposition processing. The structural heterogeneity and loss of carriers that occur during thermal annealing are only partly reversible. We anticipate that this insight into the structure-processing-property relationships within a-IZO will help to enable a-IZO-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗