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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

High pressure floating zone growth and structural properties of ferrimagnetic quantum paraelectric BaFe{sub 12}O{sub 19}

High quality single crystals of BaFe{sub 12}O{sub 19} were grown using the floating zone technique in 100 atm of flowing oxygen. Single crystal neutron diffraction was used to determine the nuclear and magnetic structures of BaFe{sub 12}O{sub 19} at 4 K and 295 K. At both temperatures, there exist local electric dipoles formed by the off-mirror-plane displacements of magnetic Fe{sup 3+} ions at the bipyramidal sites. The displacement at 4 K is about half of that at room temperature. The temperature dependence of the specific heat shows no anomaly associated with long range polar ordering in the temperature range from 1.90 to 300 K. The inverse dielectric permittivity, 1/ε, along the c-axis shows a T{sup 2} temperature dependence between 10 K and 20 K, with a significantly reduced temperature dependence displayed below 10 K. Moreover, as the sample is cooled below 1.4 K there is an anomalous sharp upturn in 1/ε. These features resemble those of classic quantum paraelectrics such as SrTiO{sub 3}. The presence of the upturn in 1/ε indicates that BaFe{sub 12}O{sub 19} is a critical quantum paraelectric system with Fe{sup 3+} ions involved in both magnetic and electric dipole formation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Origin of green luminescence in hydrothermally grown ZnO single crystals

Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thermo-acoustic engineering of silicon microresonators via evanescent waves

A temperature-compensated silicon micromechanical resonator with a quadratic temperature characteristic is realized by acoustic engineering. Energy-trapped resonance modes are synthesized by acoustic coupling of propagating and evanescent extensional waves in waveguides with rectangular cross section. Highly different temperature sensitivity of propagating and evanescent waves is used to engineer the linear temperature coefficient of frequency. The resulted quadratic temperature characteristic has a well-defined turn-over temperature that can be tailored by relative energy distribution between propagating and evanescent acoustic fields. A 76 MHz prototype is implemented in single crystal silicon. Two high quality factor and closely spaced resonance modes, created from efficient energy trapping of extensional waves, are excited through thin aluminum nitride film. Having different evanescent wave constituents and energy distribution across the device, these modes show different turn over points of 67 °C and 87 °C for their quadratic temperature characteristic.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ferromagnetic resonance in a single crystal of iron borate and magnetic field tuning of hybrid oscillations in a composite structure with a dielectric: Experiment and theory

The high-frequency properties of a composite resonator comprised single crystal iron borate (FeBO{sub 3}), a canted antiferromagnet with a weak ferromagnetic moment, and a polycrystalline dielectric were investigated at 9–10 GHz. Ferromagnetic resonance in this frequency range was observed in FeBO{sub 3} for bias magnetic fields of ∼250 Oe. In the composite resonator, the magnetic mode in iron borate and dielectric mode are found to hybridize strongly. It is shown that the hybrid mode can be tuned with a static magnetic field. Our studies indicate that coupling between the magnetic mode and the dielectric resonance can be altered from maximum hybridization to a minimum by adjusting the position of resonator inside the waveguide. Magnetic field tuning of the resonance frequency by a maximum of 145 MHz and a change in the transmitted microwave power by as much as 16 dB have been observed for a bias field of 250 Oe. A model is discussed for the magnetic field tuning of the composite resonator and theoretical estimates are in reasonable agreement with the data. The composite resonator with a weak ferromagnet and a dielectric is of interest for application in frequency agile devices with electronically tunable electrodynamic characteristics for the mm and sub-mm wave bands.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optical and electron transport properties of rock-salt Sc{sub 1−x}Al{sub x}N

Epitaxial single-crystal Sc{sub 1−x}Al{sub x}N ternary alloy layers deposited by magnetron co-sputtering on MgO(001) substrates at 950 °C exhibit a solid solution rock-salt phase for x = 0–0.2 without decomposition. Optical absorption indicates a linear increase in the optical gap from 2.51 eV for ScN to 3.05 eV for Sc{sub 0.8}Al{sub 0.2}N and, after correction due to the Moss-Burstein shift, a direct X point interband transition energy E{sub g}(X) = 2.15 + 2.75 x (eV). Correspondingly, the direct transition at the zone center increases with Al concentration according to E{sub g}(Γ) = 3.80 + 1.45 x (eV), as determined from a feature in the reflection spectra. All layers are degenerate n-type semiconductors with a room temperature mobility that decreases from 22 to 6.7 to 0.83 cm{sup 2}/V s as x increases from 0 to 0.11 to 0.20. The corresponding carrier densities are 9.2 × 10{sup 20}, 7.9 × 10{sup 20}, and 0.95 × 10{sup 20 }cm{sup −3} as determined from Hall measurements and consistent with optical free carrier absorption below photon energies of 1 eV. Temperature dependent transport measurements indicate metallic conduction for ScN, but weak localization that leads to a resistivity minimum at 85 and 210 K for x = 0.051 and 0.15, respectively, and a negative temperature coefficient over the entire measured 4–300 K range for Sc{sub 0.8}Al{sub 0.2}N. The decreasing mobility is attributed to alloy scattering at randomly distributed Al atoms on cation sites, which also cause the weak localization. The carrier density is primarily due to unintentional F doping from the Sc target and decreases strongly for x > 0.15, which is attributed to trapping in defect states due to the deterioration of the crystalline quality, as evidenced by the x-ray diffraction peak width that exhibits a minimum of 0.14° for x = 0.11 but increases to 0.49° for x = 0.20. This is consistent with asymmetric x-ray diffraction analyses, indicating a relaxed lattice constant that decreases from 4.511 ± 0.005 to 4.411 ± 0.004 Å for x = 0–0.2, and a biaxial in-plane compressive strain that decreases from −1.1% to −0.2% as x increases from 0 to 0.11, which is attributed to the higher Al adatom mobility, but increases again to −1.8% for x = 0.20, as x approaches the critical composition for phase separation, which causes structural instability and a higher defect density.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of dislocation pile-up on size-dependent yield strength in finite single-crystal micro-samples

Recent research has explained that the steeply increasing yield strength in metals depends on decreasing sample size. In this work, we derive a statistical physical model of the yield strength of finite single-crystal micro-pillars that depends on single-ended dislocation pile-up inside the micro-pillars. We show that this size effect can be explained almost completely by considering the stochastic lengths of the dislocation source and the dislocation pile-up length in the single-crystal micro-pillars. The Hall–Petch-type relation holds even in a microscale single-crystal, which is characterized by its dislocation source lengths. Our quantitative conclusions suggest that the number of dislocation sources and pile-ups are significant factors for the size effect. They also indicate that starvation of dislocation sources is another reason for the size effect. Moreover, we investigated the explicit relationship between the stacking fault energy and the dislocation “pile-up” effect inside the sample: materials with low stacking fault energy exhibit an obvious dislocation pile-up effect. Our proposed physical model predicts a sample strength that agrees well with experimental data, and our model can give a more precise prediction than the current single arm source model, especially for materials with low stacking fault energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of In{sub x}Ga{sub 1−x}N films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 °C and 500 °C, respectively. In incorporation is also seen to be enhanced to ≈28% at 400 °C to yield a stable green emission, while the nanorods grown at 500 °C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor

An all-solid-state electric-double-layer transistor (EDLT) was fabricated for electrical modulation of the superconducting critical temperature (T{sub c}) of Nb film epitaxially grown on α-Al{sub 2}O{sub 3} (0001) single crystal. In an experiment, T{sub c} was modulated from 8.33 to 8.39 K while the gate voltage (V{sub G}) was varied from 2.5 to −2.5 V. The specific difference of T{sub c} for the applied V{sub G} was 12 mK/V, which is larger than that of an EDLT composed of ionic liquid. A T{sub c} enhancement of 300 mK was found at the Li{sub 4}SiO{sub 4}/Nb film interface and is attributed to an increase in density of states near the Fermi level due to lattice constant modulation. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High pressure Laue diffraction and its application to study microstructural changes during the α → β phase transition in Si

Here, an approach using polychromatic x-ray Laue diffraction is described for studying pressure induced microstructural changes of materials under pressure. The advantages of this approach with respect to application of monochromatic x-ray diffraction and other techniques are discussed. Experiments to demonstrate the applications of the method have been performed on the α → β phase transition in Si at high pressures using a diamond anvil cell. We present the characterization of microstructures across the α–β phase transition, such as morphology of both the parent and product phases, relative orientation of single-crystals, and deviatoric strains. Subtle inhomogeneous strain of the single-crystal sample caused by lattice rotations becomes detectable with the approach.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Electronic structure of β-Ga{sub 2}O{sub 3} single crystals investigated by hard X-ray photoelectron spectroscopy

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga{sub 2}O{sub 3} were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga{sub 2}O{sub 3}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Order parameters and magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga epitaxial films grown on MgO (001) and SrTiO{sub 3} (001)

We study the relationship between long range order parameters and the magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga (MnGa) epitaxial films grown on MgO (001) and SrTiO{sub 3} (STO) (001) single crystalline substrates. MnGa films deposited on MgO (001) show rather large irregular variation in magnetization with increasing substrate temperature in spite of the improved long range order of total atomic sites. The specific site long range order of Mn-I site characterized in the [101] orientation revealed the fluctuation of the occupation fraction of two Mn atomic sites with elevated substrate temperature, which appears more relevant to the observed magnetization change than the long range order of the total atomic sites. In case of MnGa films grown on the lattice-matched STO (001), high long range order of the total atomic sites in spite of the existence of secondary phase represents that the lattice mismatch plays a crucial role in determining the atomic arrangement of Mn and Ga atoms in the off-stoichiometric compositional case of MnGa.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Partial CuInGaSe 2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO x buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Lastly, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

14 SOLAR ENERGY↗
DOE OSTI2015

Synergistic effect of alloying elements doping and external pressure on the elastic property of Ni{sub 3}Al: A first-principles study

In this paper, the basic electronic structures and elastic properties of Ni{sub 3}Al doping with alloying elements (Re, Cr, and Mo) under different pressures have been investigated using first-principles calculations based on density functional theory. It is shown that both alloying elements and external applied pressure contribute positively to the elastic properties of Ni{sub 3}Al, and the configurations of the compounds remain almost unchanged. The calculated elastic constants and moduli increase linearly with the pressure increasing from 0 and 40 GPa. Among the alloying elements studied in the present work, Re exhibits the most significant effect compared with the other elements, showing its practical importance. Especially, if both alloying elements doping and pressure effects are considered simultaneously, which has not been considered previously, the studied compounds exhibit an even better elastic property than the simple superposition of the two influences. Such synergistic effect demonstrates promising applications of Ni-based single crystal superalloys in possible extreme mechanical environments.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of gypsum crystals exposed to a high CO{sub 2} concentration fog using x-ray

In Chihuahua State, a little town called Naica has the largest gypsum single crystals in the world. The growth of these structures has been described as a long and stable process developed over thousands of years. Due to the change in the environmental conditions, these crystals could suffer alterations on their surface. In this project we study the cause of possible deterioration of the giant crystals and intend to suggest measures for their preservation. For this sake, our first experiment consists on several gypsum crystals that have been subjected in a climate chamber to a fog at high CO{sub 2} concentration and 51 °C for a period of time of six months, extracting two crystals every 15 days. Then the crystals have been characterized through Grazing Incidence X-Ray Diffraction using a diffractometer PanAlytical X’PertPro with two different detectors; Xe-filled proportional detector and a Pixel 3D detector. The results were compared to determine which technique is the most suitable to study the degradation of gypsum single crystals. In the two cases, we have identified only the gypsum phase, but with different crystal plane orientations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Disparity of secondary electron emission in ferroelectric domains of YMnO{sub 3}

The applications of multiferroic materials require our understanding about the behaviors of domains with different polarization directions. Taking advantage of the scanning electron microscope, we investigate the polar surface of single crystal YMnO{sub 3} sample in secondary electron (SE) mode. By slowing down the scanning speed of electron beam, the negative surface potential of YMnO{sub 3} can be realized, and the domain contrast can be correspondingly changed. Under this experimental condition, with the help of a homemade Faraday cup, the difference of intrinsic SE emission coefficients of antiparallel domains is measured to be 0.12 and the downward polarization domains show a larger SE emission ability. Our results indicate that the total SE emission of this material can be altered by changing the ratio of the antiparallel domains, which provide an avenue for device design with this kind of materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Interlocked chiral/polar domain walls and large optical rotation in Ni{sub 3}TeO{sub 6}

Chirality, i.e., handedness, pervades much of modern science from elementary particles, DNA-based biology to molecular chemistry; however, most of the chirality-relevant materials have been based on complex molecules. Here, we report inorganic single-crystalline Ni{sub 3}TeO{sub 6}, forming in a corundum-related R3 structure with both chirality and polarity. These chiral Ni{sub 3}TeO{sub 6} single crystals exhibit a large optical specific rotation (α)—1355° dm{sup −1} cm{sup 3} g{sup −1}. We demonstrate, for the first time, that in Ni{sub 3}TeO{sub 6}, chiral and polar domains form an intriguing domain pattern, resembling a radiation warning sign, which stems from interlocked chiral and polar domain walls through lowering of the wall energy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Noise signatures of metastable resistivity states in ferromagnetic insulating manganite

Pronounced noise signatures enabling one to discriminate metastable resistivity states in La{sub 0.86}Ca{sub 0.14}MnO{sub 3} single crystals have been observed. The normalized noise spectra for metastable resisitivity differ both in shape and magnitude, indicating that the metastable state is associated with transition of the electronic system into another local minimum of the potential landscape. Such scenario is consistent with freezing of the electronic system into a Coulomb glass state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗