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At least 955 records · Page 53

First-principles DFT+U modeling of defect behaviors in anti-ferromagnetic uranium mononitride

A series of point defects in uranium mononitride (UN) have been studied by first-principles DFT+U calculations. The influence of intrinsic defects on the properties of UN was explored by considering the anti-ferromagnetic (AFM) order along the [001] direction. Our results show that all the point defects lead to obvious volume swelling of UN crystal. Energetically, the interstitial nitrogen defect is the most favorable one among single-point defects in UN crystal with the formation energy of 4.539 eV, while the N-Frenkel pair becomes the most preferable one among double-point defects. The AFM order induces obvious electron spin polarization of uranium towards neighboring uranium atoms with opposite spin orientations in UN crystal.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Electrical switching in a Fe-thiacrown molecular device

First-principles calculations are performed to inspect the electronic and transport properties of a Fe-thiacrown molecular device, namely, a Au-Fe(9S{sub 3}){sub 2}-Au junction. It is found that the junction has a low-spin (LS) ground state and a high-spin (HS) metastable state. Further study shows that the HS state is a conducting state while the LS state is a nearly insulating one, which means that a switch between these two spin configurations results in a good electrical switching behavior and can serve as an ON/OFF state for a logic unit. Thus, it may find applications as switches or memories in molecular electronic circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Defect mode properties of two-dimensional plasma-filled defective metallic photonic crystal

This paper studies the frequency and amplitude properties of a defect mode which is only in a plasma-filled metallic photonic crystal with defect layer. Results show that the frequency almost has no change and the amplitude declines gradually with the growth of the number of the layers. The frequency of the defect mode not only can be modulated by filling ratio but also can be tuned by plasma density without modifying the structure. The amplitude can be modified by plasma angular frequency as well. These characteristics provide a foundation to design tunable filters, high power millimeter devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V) and currents (<1 mA) with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.

36 MATERIALS SCIENCE↗

Characteristics of atmospheric-pressure non-thermal N{sub 2} and N{sub 2}/O{sub 2} gas mixture plasma jet

An atmospheric-pressure non-thermal plasma jet driven by high frequency alternating current and operating on N{sub 2} and N{sub 2}/O{sub 2} gas mixture is investigated. The plasma jet can reach 55 mm in length at a gas flow rate of 2500 l/h. The gas temperature at a distance of 4 mm from the nozzle is close to room temperature. Optical emission spectroscopy is employed to investigate the important plasma parameters such as the excited species, rotational temperature, vibrational temperature, and excitation temperature under different discharge conditions. The results show that the plasma source operates under non-equilibrium conditions. The absolute irradiance intensity of the vibrational band N{sub 2}(C-B) in the active region is measured. Taking into account the irradiance intensity of N{sub 2}(C-B,0-0) and N{sub 2}(B-X,0-0) as well as measured current, the electron density, which is determined by considering direct and step-wise electron impact excitation of nitrogen emission, reaches a maximum value of 5.6 × 10{sup 20}/m{sup 3}.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High flux symmetry of the spherical hohlraum with octahedral 6LEHs at the hohlraum-to-capsule radius ratio of 5.14

We propose a spherical hohlraum with octahedral six laser entrance holes at a specific hohlraum-to-capsule radius ratio of 5.14 for inertial fusion study, which has robust high symmetry during the capsule implosion and low backscatter without supplementary technology. To produce an ignition radiation pulse of 300 eV, it needs 1.5 MJ absorbed laser energy in such a golden octahedral hohlraum, about 30% more than a traditional cylinder. Nevertheless, it is worth for a high symmetry and low backscatter. The proposed octahedral hohlraum is also flexible and can be applicable to diverse inertial fusion drive approaches.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Development of “fragility” in relaxor ferroelectrics

Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the “Super-Arrhenius (SA)” relaxation. Despite great progress in glass-forming liquids, the “fragility” property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-x%PbTiO{sub 3} (PMN − x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the “fragility” properties of the SA relaxation in PMN − x%PT. Such fascinating issues as the mechanism of the “fragility” at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between “fragility” and ferroelectric order are investigated. Our results show that both the “fragility” of the temperature-dependent SA relaxation and ferroelectric order in the PMN − x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature T{sub c}. A reasonable physical scenario, based on our “configurational-entropy-loss” theory and Nowick's “stress-induced-ordering” theory, was proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultrasonic detection technology based on joint robot on composite component with complex surface

Some components have complex surface, such as the airplane wing and the shell of a pressure vessel etc. The quality of these components determines the reliability and safety of related equipment. Ultrasonic nondestructive detection is one of the main methods used for testing material defects at present. In order to improve the testing precision, the acoustic axis of the ultrasonic transducer should be consistent with the normal direction of the measured points. When we use joint robots, automatic ultrasonic scan along the component surface normal direction can be realized by motion trajectory planning and coordinate transformation etc. In order to express the defects accurately and truly, the robot position and the signal of the ultrasonic transducer should be synchronized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The full Zakharov equations in nonextensive q-plasma

The wave-wave interactions among electromagnetic mode, Langmuir and ion-sound modes are theoretically investigated in a nonextensive plasma, with the help of the two-fluid theory and the two-scale method. The full Zakharov equations for the nonextensive distribution are derived and analyzed numerically. The results show that the collapsing of the three waves would be affected by the nonextensive parameter q. When q increasing, the collapsing would become faster and the rate of density perturbation would be greater. And the localized density structure would form a plasma channel much easier.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The radiation temperature and M-band fraction inside hohlraum on the SGIII-prototype laser facility

The radiation temperature T{sub R} and M-band fraction f{sub M} inside the vacuum Au hohlraum have been experimentally determined by a shock wave technique and a broadband soft x-ray spectrometer (SXS) on the SGIII-prototype laser facility. From the results of the shock wave technique, T{sub R} is about 202 eV, and f{sub M} is about 9% for the hohlraums driven by a 1 ns flattop pulse of 6 kJ laser energy. The Continuous Phase Plate (CPP) for beam smoothing is applied in the experiment, which increases T{sub R} to 207 eV while has almost no influence on f{sub M}. Comparisons between the results from the two kinds of technologies show that T{sub R} from the shock wave technique is lower than that from SXS whether with CPP or not. However, f{sub M} from the shock wave technique is consistent with that from SXS without CPP, but obviously lower than the SXS's result with CPP. The preheat effect on exterior surface of witness plate is reduced by thicker thickness of witness plate designed for higher laser driven energy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

36 MATERIALS SCIENCE↗

Magnetically coupled electromagnetically induced transparency analogy of dielectric metamaterial

In this manuscript, we experimentally demonstrate magnetically coupled electromagnetically induced transparency (EIT) analogy effect inside dielectric metamaterial. In contrast to previous studies employed different metallic topological microstructures to introduce dissipation loss change, barium strontium titanate, and calcium titanate (CaTiO{sub 3}) are chosen as the bright and dark EIT resonators, respectively, due to their different intrinsic dielectric loss. Under incident magnetic field excitation, dielectric metamaterial exhibits an EIT-type transparency window around 8.9 GHz, which is accompanied by abrupt change of transmission phase. Numerical calculations show good agreement with experiment spectra and reveal remarkably increased group index, indicating potential application in slow light.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Infrared light detection using a whispering-gallery-mode optical microcavity

We demonstrate a thermal infrared (IR) detector based on an ultra-high-quality-factor (Q) whispering-gallery-mode (WGM) microtoroidal silica resonator and investigate its performance to detect IR radiation at 10 μm wavelength. The bandwidth and the sensitivity of the detector are dependent on the power of a probe laser and the detuning between the probe laser and the resonance frequency of the resonator. The microtoroid IR sensor achieved a noise-equivalent-power (NEP) of 7.46 nW, corresponding to an IR intensity of 0.095 mW/cm{sup 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

In this work, we fabricate BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO{sub 3} substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10{sup 2} in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

36 MATERIALS SCIENCE↗

Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

The dependence of ballistic electron current on Sn content, sidewall orientations, fin width, and uniaxial stress is theoretically studied for the GeSn fin field-effect transistors. Alloying Sn increases the direct Γ valley occupancy and enhances the injection velocity at virtual source node. (112{sup ¯}) sidewall gives the highest current enhancement due to the rapidly increasing Γ valley occupancy. The non-parabolicity of the Γ valley affects the occupancy significantly. However, uniaxial tensile stress and the shrinkage of fin width reduce the Γ valley occupancy, and the currents are enhanced by increasing occupancy of specific indirect L valleys with high injection velocity.

36 MATERIALS SCIENCE↗

Electron density measurements of atmospheric-pressure non-thermal N{sub 2} plasma jet by Stark broadening and irradiance intensity methods

An atmospheric-pressure non-thermal plasma jet excited by high frequency alternating current using nitrogen is developed and the electron density in the active region of this plasma jet is investigated by two different methods using optical emission spectroscopy, Stark broadening, and irradiance intensity method. The irradiance intensity method shows that the average electron density is about 10{sup 20}/m{sup 3} which is slightly smaller than that by the Stark broadening method. However, the trend of the change in the electron density with input power obtained by these two methods is consistent.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

36 MATERIALS SCIENCE↗

Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

A memory device p-Si/SiO{sub 2}/(TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1}(TAO-81)/Al{sub 2}O{sub 3}/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10{sup −5} s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al{sub 2}O{sub 3} layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al{sub 2}O{sub 3} induced by the inter-diffusion between TiO{sub 2} and Al{sub 2}O{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗