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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Interface solitons in thermal nonlinear media

We demonstrate the existence of fundamental and dipole interface solitons in one-dimensional thermal nonlinear media with a step in linear refractive index. Fundamental interface solitons are found to be always stable and the stability of dipole interface solitons depends on the difference in linear refractive index. The mass center of interface solitons always locates in the side with higher refractive index. The two intensity peaks of dipole interface solitons are unequal except under some specific conditions, which is different from their counterparts in uniform thermal nonlinear media.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Dielectric screening and electric field control of ferromagnetism at the CaMnO 3 /CaRuO 3 interface

Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of CaRuO 3 /CaMnO 3 (CRO/CMO) (001), a prototype interface between a non-magnetic metal and an antiferromagnetic insulator. Even without the electric field, the interfacial CMO layer acquires a ferromagnetic moment due to a spin-canted state, caused by the Anderson-Hasegawa double exchange (DEX) between the Mn moments and the leaked electrons from the CRO side. An electric field would alter the carrier density at the interface, leading to the possibility of controlling the magnetism, since DEX is sensitive to the carrier density. We study this effect quantitatively using density-functional calculations in the slab geometry. We find a text-book like dielectric screening of the electric field, which introduces polarization charges at the interfaces and the surfaces. The extra charge at the interface enhances the ferromagnetism via the DEX interaction, while away from the interface the original AFM state of the Mn layers remains unchanged. The effect could have potential application in spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a “Si-H···H-O” complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H···H-O complex will be the center for defect creation and device degradation. Finally, we also explain why such a center might be relatively easy to form during the hydrogen annealing process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Influence of interface reconstruction on the formation and superconductive properties of metastable Pb-Ga alloy films

We show that the growth, composition, and superconductive properties of ultrathin $\textnormal{Pb}_{1-x}\textnormal{Ga}_x$ alloy films depend strongly on the atomic structure of the substrate interface. Whereas alloy films on the Si(111)-($7\times7$) surface grow in multilayers, reminiscent of the quantum growth phenomenon observed in pure Pb layers, alloy films on the Si(111)-$(\sqrt3 \times \sqrt3)R30^\circ$-Pb and Si(111)-$(\sqrt3 \times \sqrt3)R30^\circ$-Ga interfaces gradually switch to classical layer-by-layer growth. The ($7\times7$) interface is unique in that it enables formation of atomically smooth alloy films containing up to 6\% of Ga, which is far beyond the solid solubility limit. In contrast, the ($\sqrt3 \times \sqrt3$) interfaces promote phase separation. The contrasting influences of these interfaces are also reflected by their superconductive properties, most notably by the differences in the critical current density, exceeding more than one order of magnitude.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Weak scaling of the contact distance between two fluctuating interfaces with system size

A pair of flat parallel surfaces, each freely diffusing along the direction of their separation, will eventually come into contact. If the shapes of these surfaces also fluctuate, then contact will occur when their centers-of-mass remain separated by a nonzero distance ℓ. An example of such a situation is the motion of interfaces between two phases at conditions of thermodynamic coexistence, and in particular the annihilation of domain wall pairs under periodic boundary conditions. Here we present a general approach to calculate the probability distribution of the contact distance ℓ and determine how its most likely value ℓ* depends on the surfaces' lateral size L. Using the Edward-Wilkinson equation as a model for interfaces, we demonstrate that ℓ* scales weakly with system size, i.e., the dependence of ℓ* on L for both (1+1)- and (2+1)-dimensional interfaces is such that lim L→∞ (ℓ*/L) = 0. In particular, for (2+1)-dimensional interfaces ℓ* is an algebraic function of logL, a result that is confirmed by computer simulations of slab-shaped domains formed under periodic boundary conditions. Overall, this weak scaling implies that such domains remain topologically intact until ℓ becomes very small compared to the lateral size of the interface, contradicting expectations from equilibrium thermodynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Stabilization of Hydroxide Ions at the Interface of a Hydrophobic Monolayer on Water via Reduced Proton Transfer

We report a joint study using surface-specific sum-frequency vibrational spectroscopy and ab initio molecular dynamics simulations, respectively, on a pristine hydrophobic (sub)monolayer hexane-water interface, namely, the hexane/water interface with varied vapor pressures of hexane and different pHs in water. We show clear evidence that hexane on water revises the interfacial water structure in a way that stabilizes the hypercoordinated solvation structure and slows down the migration of hydroxide ion (OH – ) relative to that in bulk water. Furthermore, this mechanism effectively attracts the OH – to the water-hydrophobic interface with respect to its counterion. The result illustrates the striking difference of proton transfer of hydrated OH – at the interface and in the bulk, which is responsible for the intrinsic charging effect at the hydrophobic interface.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors

Heuslers are a prominent family of multifunctional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic properties and flexibility in chemical composition, Heusler-based heterostructures can be designed to show intriguing properties at the interface. Using electronic structure calculations, we show that two-dimensional electron or hole gases (2DEG or 2DHG) form at the interface of half-Heusler (HH) semiconductors without any chemical doping. We use CoTiSb/NiTiSn as an example, and show that the 2DEG at the TiSb/Ni(001) termination and the 2DHG at the Co/TiSn(001) termination are intrinsic to the interface, and hold rather high charge densities of 3 × 10 14 carriers/cm 2 . These excess charge carriers are tightly bound to the interface plane and are fully accommodated in transition-metal d subbands. Furthermore, the formation of 2DEG and 2DHG are not specific to the CoTiSb/NiTiSn system; a list of combinations of HH semiconductors that are predicted to form 2DEG or 2DHG is provided based on band alignment, interface termination, and lattice mismatch.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological properties of SnSe/EuS and SnTe/CaTe interfaces

Herein, we use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We further consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the Γ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at Γ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Interface-induced phenomena in magnetism

Our article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. We provide an overview for the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. Our article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Integrated Reference Region Analysis for Parallel DFIGs’ Interfacing Inductors

Although the traditional design of doubly-fed induction generators (DFIGs)’ interfacing inductors consider the peak ripple of the grid-side converter (GSC)’s output current, it does not consider the inductors’ impact on DFIGs’ smallsignal stability. Located in series between the GSC and the stator, the inappropriate selection of the interfacing inductor can easily result to system instability. Therefore, this paper first proposes the integrated reference region analysis for small wind farm's interfacing inductors to improve the traditional design method. Firstly, a new detailed parallel DFIGs’ smallsignal model that considers output currents’ coupling is built in d-q coordinate system with state-space approach. The model focuses on representing the operating states of parallel DFIGs in wind farm. Secondly, the linearized state-space matrix of parallel DFIGs is decomposed into nominal-value matrix and location matrix. Considering the traditional design requirements, the integrated reference region for interfacing inductor is proposed through spectral radius and bialternate matrix sum (BMS). Furthermore, it can provide better guidance for parameter selecting and stabilization method researches. Finally, the simulation and experimental results show that the proposed integrated reference region for parallel DFIGs’ interfacing inductors is accurate and instructive.

47 OTHER INSTRUMENTATION↗
DOE OSTI2013

X-ray photoelectron spectroscopic study on interface bonding between Pt and Zn- and O-terminated ZnO

Interface bonding between Pt and Zn- and O-terminated ZnO surfaces was investigated by precise analysis of x-ray photoelectron spectra. The interfaces were formed by vapor depositing Pt onto the ZnO surfaces in ultrahigh vacuum. The changes in the Zn 2p{sub 3/2}, O 1s, Zn LMM Auger, and Pt 4f{sub 7/2} spectra upon Pt deposition were observed. The changes in the shape of the Zn LMM spectra and the shifts in the binding energy of Zn 2p{sub 3/2} and O 1s revealed that there was a metallic Zn component in the Zn LMM and Zn 2p{sub 3/2} spectra for Zn-terminated ZnO and a Pt-O component in the O 1s spectra for both Zn- and O-terminated ZnO. Peaks were fitted with multiple components accordingly. The binding energy shifts of Zn 2p{sub 3/2} and O 1s for the ZnO component were almost the same, which confirmed that the fitting was reasonable. From the fitting results, the interface bonding was concluded to be O-terminated, i.e., Zn-O-Pt bond formation occurred at the interface for both Zn- and O-terminated ZnO. This clearly demonstrated that the stable interface bonding occurring between Pt and ZnO is Zn-O-Pt bonding whether the ZnO substrate is initially Zn-terminated or O-terminated.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Adsorption of polymer chains at penetrable interfaces

We investigate the problem of adsorption (localization) of polymer chains in the system of two penetrable interfaces within the mean-field approximation. The saturation of the polymer system in the limit case of zero bulk concentration is studied. We find the exact solution of this mean-field polymer adsorption problem that opens the possibility to treat various localization problems for polymer chains in such environments using appropriate boundary conditions. The exact solution is controlled by a single scaling variable that describes the coupling between the interfaces due to the polymer chains. We obtain a nonmonotonic behavior of the amount of adsorbed polymers as a function of the distance between the interfaces. This leads to a high-energy and a low-energy phase for the double layer with respect to the amount of polymers localized. At the saturation point, we find the total energy of the system and determine the force acting between the interfaces to be strictly attractive and to monotonically decay to zero when the interface distance increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Interfacial Free Energy at the Metallic Crystal–Melt Interface

The technique for estimating the interfacial free energy of transition-metal nanocrystals and its anisotropy at the interface with their melts has been developed. The expression for the coordinate of the Gibbs’ interface, which takes into account the size dependence, has been derived. The interfacial free energy of crystal faces at the interface with the related melts of monomorphic 4d and 5d metals decreases nonlinearly with a decrease in the nanocrystal size and, at a certain size, disappears. At the nanocrystal radius of more than 10 nm, the interfacial free energy of the faces approaches that for a macrocrystal. The temperature dependence of the interfacial free energy at the crystal–melt interface is almost linear. The technique developed is shown to be in agreement with the known experimental data for mono- and polycrystals and applicable for estimating the orientational, temperature, and size dependences of the interfacial free energy at the interfaces of nano-, micro-, and macrocrystals with their melts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Experimental study of an isochorically heated heterogeneous interface. A progress report

Outline of the presentation: Studying possible mix / interface motion between heterogeneous low/high Z interfaces driven by 2-fluid or kinetic plasma effects (Heated to few eV, Sharp (sub µm) interface); Isochoric heating to initialize interface done with Al quasimonoenergetic ion beams on Trident; Have measured isochoric heating in individual materials intended for compound targets; Fielded experiments on Trident to measure interface motion (Gold-diamond, tin-aluminium); Measured heated-sample temperature with streaked optical pyrometry (SOP) (UT Austin led (research contract), SOP tests → heating uniformity Vs thickness on Al foils. Results are being analyzed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

M-Adapting Low Order Mimetic Finite Differences for Dielectric Interface Problems

We consider a problem of reducing numerical dispersion for electromagnetic wave in the domain with two materials separated by a at interface in 2D with a factor of two di erence in wave speed. The computational mesh in the homogeneous parts of the domain away from the interface consists of square elements. Here the method construction is based on m-adaptation construction in homogeneous domain that leads to fourth-order numerical dispersion (vs. second order in non-optimized method). The size of the elements in two domains also di ers by a factor of two, so as to preserve the same value of Courant number in each. Near the interface where two meshes merge the mesh with larger elements consists of degenerate pentagons. We demonstrate that prior to m-adaptation the accuracy of the method falls from second to rst due to breaking of symmetry in the mesh. Next we develop m-adaptation framework for the interface region and devise an optimization criteria. We prove that for the interface problem m-adaptation cannot produce increase in method accuracy. This is in contrast to homogeneous medium where m-adaptation can increase accuracy by two orders.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

First-Principles Studies of Tritium Species Diffusivity Across the Interfaces of Ni-NiZr Alloy-Zircaloy-4

A tritium producing assembly, also known as tritium producing burnable absorber rods (TPBARs), consists of a metal getter tube located between the cladding and γ-LiAlO2 pellets. The metal getter tube is composed of a nickel (Ni) layer coated on Zircaloy-4. The getter assembly is used to capture tritium (3H) species (mainly 3H2 and 3H2O) generated from γ-LiAlO2 pellets during irradiation. Exploring 3H species (3H2, 3H2O) dissociation on the Ni surface and diffusion in the Ni layer and across the interface of Ni-plated Zircaloy-4 getters can provide insights on tritium transport and retention in the pellets and the getter materials. . In FY25, based on the ideal interface model of Ni-Zircaloy-4 generated in FY24, we will further explore the diffusion pathways of 3H across such Ni-ZrNi-alloy layer-Zircalory-4 interfaces under different conditions, including with oxide/hydroxide clusters on the Ni layer, and impurities located in ZrNi-alloy and Zircalory-4 layers. Due to the size limitation of DFT simulation, we will separate the 3-layer system into 3 sub-systems: Ni-ZrNi interface, ZrNi alloy layer, ZrNi-alloy-Zircaloy-4 interface, and simulate the diffusion barriers for tritium.

diffusion barrier↗
DOE OSTI2015

Relaxation mechanisms, structure and properties of semi-coherent interfaces

In this work, using the Cu–Ni (111) semi-coherent interface as a model system, we combine atomistic simulations and defect theory to reveal the relaxation mechanisms, structure, and properties of semi-coherent interfaces. By calculating the generalized stacking fault energy (GSFE) profile of the interface, two stable structures and a high-energy structure are located. During the relaxation, the regions that possess the stable structures expand and develop into coherent regions; the regions with high-energy structure shrink into the intersection of misfit dislocations (nodes). This process reduces the interface excess potential energy but increases the core energy of the misfit dislocations and nodes. The core width is dependent on the GSFE of the interface. The high-energy structure relaxes by relative rotation and dilatation between the crystals. The relative rotation is responsible for the spiral pattern at nodes. The relative dilatation is responsible for the creation of free volume at nodes, which facilitates the nodes’ structural transformation. Several node structures have been observed and analyzed. In conclusion, the various structures have significant impact on the plastic deformation in terms of lattice dislocation nucleation, as well as the point defect formation energies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A geospatial risk analysis graphical user interface for identifying hazardous chemical emission sources

Background: Performing back trajectory and forward trajectory using the Hybrid Single-Particle Lagrangian Integrated Trajectory Model (HYSPLIT) is a reliable approach for assessing particle transport after release among mid-field atmospheric models. HYSPLIT has an externally facing online interface that allows non-expert users to run the model trajectories without requiring extensive training or programming. However, the existing HYSPLIT interface is limited if simulations have a large amount of meteorological data and timesteps that are not coincident. The objective of this study is to design and develop a more robust tool to rapidly evaluate hazard transport conditions and to perform risk analysis, while still maintaining an intuitive and user-friendly interface. Methods: HYSPLIT calculates forward and backward trajectories of particles based on wind speed, wind direction, and the corresponding location, timestamp, and Pasquill stability classes of the regions of the atmosphere in terms of the wind speed, the amount of solar radiation, and the fractional cloud cover. The computed particle transport trajectories, combined with the online Proton Transfer Reaction-Mass Spectrometry (PTR-MS) data (https://figshare.com/articles/dataset/ARL_Data_from_PROS_station_at_Hanford_site/19993964), can be used to identify and quantify the sources and affected area of the hazardous chemicals’ emission using the potential source distribution function (PSDF). PSDF is an improved statistical function based on the well-known potential source contribution function (PSCF) in establishing the air pollutant source and receptor relationship. Performing this analysis requires a range of meteorological and pollutant concentration measurements to be statistically meaningful. The existing HYSPLIT graphical user interface (GUI) does not easily permit computations of trajectories of a dataset of meteorological data in high temporal frequency. To improve the performance of HYSPLIT computations from a large dataset and enhance risk analysis of the accidental release of material at risk, a geospatial risk analysis tool (GRAT-GUI) is created to allow large data sets to be processed instantaneously and to provide ease of visualization. Results: The GRAT-GUI is a native desktop-based application and can be run in any Windows 10 system without any internet access requirements, thus providing a secure way to process large meteorological datasets even on a standalone computer. GRAT-GUI has features to import, integrate, and convert meteorological data with various formats for hazardous chemical emission source identification and risk analysis as a self-explanatory user interface. The tool is available at https://figshare.com/articles/software/GRAT/19426742.

97 MATHEMATICS AND COMPUTING↗