Contact printing of colloidal nanocrystal thin films for hybrid organic/quantum dot optoelectronic devices
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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FORTRAN computer program for calculating time dependent temperature distribution over planar thin plates with arbitrary distribution of conductive, convective, and radioactive data
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The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes for integrated electric circuits was studied. Au wires were connected to Al electrodes by nail-head bonding after various Al surface treatments. Bonding was evaluated by measuring the wire pull strength and fraction of the number of failures at Au-Al bonds to the total number of failures. Dependence of the fraction on applied load was derived theoretically with a parameter named critical load to take into consideration the differences in Al surface condition. The relation also held explicately for various surface treatments. Characterization of the Al surface was carried out by electron microscopy for chemical analysis.
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Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.
Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.
Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.
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Carbon nanotubes were prepared by coating a substrate with a coating solution including a suitable solvent, a soluble polymer, a metal precursor having a first metal selected from iron, nickel, cobalt, and molybdenum, and optionally a second metal selected from aluminum and magnesium, and also a binding agent that forms a complex with the first metal and a complex with the second metal. The coated substrate was exposed to a reducing atmosphere at elevated temperature, and then to a hydrocarbon in the reducing atmosphere. The result was decomposition of the polymer and formation of carbon nanotubes on the substrate. The carbon nanotubes were often in the form of an array on the substrate.
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The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing V{sub s} for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CN{sub x} films produced by MFMS and DCMS at V{sub s} = 100 and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 × 10{sup −5} mm{sup 3}/Nm. While all CN{sub x} films exhibit low friction, wear depends strongly on the structural and mechanical characteristics of the films. The MFMS mode is best suited for the production of hard CN{sub x} films, although high compressive stresses challenge the application on steel substrates. Films grown in HiPIMS mode provide adequate adhesion due to low residual stress values, at the expense of lower film hardness. Thus, a relatively wide mechanical property envelope is presented for CN{sub x} films, which is relevant for the optimization of CN{sub x} film properties intended to be applied as low friction and wear resistant coatings.
Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.
Solutia Performance Films, utilizing funding from the U.S. Department of Energy's Buildings Technologies Program, completed research to develop, validate, and commercialize a range of cost-effective, low-emissivity energy-control retrofit window films with significantly improved emissivity over current technology. These films, sold under the EnerLogic® trade name, offer the energy-saving properties of modern low-e windows, with several advantages over replacement windows, such as: lower initial installation cost, a significantly lower product carbon footprint, and an ability to provide a much faster return on investment. EnerLogic® window films also offer significantly greater energy savings than previously available with window films with similar visible light transmissions. EnerLogic® window films offer these energy-saving advantages over other window films due to its ability to offer both summer cooling and winter heating savings. Unlike most window films, that produce savings only during the cooling season, EnerLogic® window film is an all-season, low-emissivity (low-e) film that produces both cooling and heating season savings. This paper will present technical information on the development hurdles as well as details regarding the following claims being made about EnerLogic® window film, which can be found at www.EnerLogicfilm.com: 1. Other window film technologies save energy. EnerLogic® window film's patent-pending coating delivers excellent energy efficiency in every season, so no other film can match its annual dollar or energy consumption savings. 2. EnerLogic® window film is a low-cost, high-return technology that compares favorably to other popular energy-saving measures both in terms of energy efficiency and cost savings. In fact, EnerLogic® window film typically outperforms most of the alternatives in terms of simple payback. 3. EnerLogic® window film provides unparalleled glass insulating capabilities for window film products. With its patent-pending low-e technology, EnerLogic® window film has the best insulating performance of any film product available. The insulating power of EnerLogic® window film gives single-pane windows the annual insulating performance of double-pane windows - and gives double-pane windows the annual insulating performance of triple-pane windows.
Purpose: In this study, the relevant characteristics of the new Gafchromic XRQA2 film for its application in measuring kV cone beam computed tomography (CBCT) image doses were thoroughly investigated. Methods: The film was calibrated free in air to air kerma levels between 0 and 9 cGy using 120 kVp photon beams produced by the x-ray volume imager. Films were scanned using transmission and reflection scanning modes with the Epson Expression 10000 XL flat-bed document scanner. The impact of film size, region of interest for the analysis, scan uniformity, scan resolution, scan orientation and alternate scanning sides on the analysis process were investigated. Energy dependence, postirradiation growth of reflectance with time and irradiation angular dependence of the film were tested at different air kerma levels. Results: The net reflectance changed by {approx}3% when the size of the film piece changed from 1 cm x 2 cm to 10 cm x 11 cm and changed by {approx}1% when ROI changed from 0. 7 cm x 0. 7 cm to 8 cm x 8 cm, suggesting a good uniformity of the film. The film was successfully analyzed using the transmission scanning mode, calibration curves from both transmission and reflection scanning modes showed similar behavior. The calibration uncertainty was somewhat lower when the film was scanned using reflection mode (6% and 8% for reflection and transmission modes, respectively.) Higher scanning resolution came with increasing calibration uncertainty. The calibration uncertainty for reflection and transmission modes increased from {approx}3.5% to 7% and from {approx}3.5% to 9%, respectively when scanning resolution was changed from 50 to 400 dpi. Scanning the film on alternate sides using transmission mode led to variation of 16%-19% in the net optical density at doses commonly used for CBCT procedures. The film response changed by almost 10% when it was exposed to beams of two different energies (100 and 120 kVp.) Other features of the film such as film orientation, postexposure growth, and irradiation angular dependence were also investigated. Conclusions: The size of film piece and analysis ROI used for calibration slightly affected the film response. Both transmission and reflection scanning modes can be used to analyze the Gafchromic XRQA2, with the reflection mode having a somewhat lower calibration uncertainty. Scanning films on alternate sides using transmission mode significantly affects the optical density. The film response was shown to be energy dependent. The films reached stability in about 6 h after exposure. The film response was proven to be independent of irradiation angle except when the beam is parallel to the film surface.