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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗
DOE OSTI2021

World Record Demonstration of > 30% Thermophotovoltaic Conversion Efficiency

Thermophotovoltaic (TPV) devices are solid-state heat engines that convert thermal radiation into electricity using semiconductor diodes, and have applications in energy storage, primary power conversion, and waste heat recovery. Higher temperature emitters and wider band gap photovoltaics (PVs) generally afford higher TPV efficiencies. High temperature emitters are accessible in thermal energy storage applications. We have demonstrated a world record 31% +/- 2% TPV conversion efficiency with a 0.9 cm2 GaAs-based PV device under a 2430 °C thermal emitter, producing an electrical output power of 2.23 W. Critical to the result was the cell’s high reflectance of photon energies below the device band gap. Unlike solar PV, for which sub-band gap (SBG) light is lost, a TPV cell can reflect and recycle SBG light to the thermal emitter. The demonstration was made on a custom-built measurement platform in which a ~100 cm2 graphite thermal emitter was heated under vacuum up to 2430 °C. The TPV efficiency was evaluated by comparing the measured electrical output power of the TPV with the calorimetrically measured total net power incident on the cell. The measured TPV efficiency as a function of thermal emitter temperature was corroborated by our full system modeling predictions. As far as the authors are aware, this is the highest TPV conversion efficiency ever measured, and device improvements should yield > 40% efficiency in the near future.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2021

On the Ambiguity of Using Isc for Analyzing Suns-Voc Data on Modules

In standard silicon solar modules, cells are strung in series with bypass diodes incorporated to reduce the effects of shading. When all of the strings are partially shaded the measured short circuit current is affected and the Isc of the module will be equal to that of the lowest current cell in the least shadowed string. In bifacial modules the ability to assess losses due to shading is especially important. This paper advocates an alternative approach to converting the raw suns-voc data to pseudo IV data in modules where shading may be affecting the suns-voc curve results.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Evaluation of an LED Simulator for Single- and Multi-Junction PV Cell Performance Testing

We present the evaluation of a solar simulator comprising a Light Emitting Diode (LED) array as its light source. While multiple applications can be envisioned for such a light source, here we focus on its use for performance testing of solar cells at Standard Test Conditions. With this in mind, we present characterization of the spatial uniformity of the irradiance and its temporal stability as well as the spectral range and spectral class. For a multisource simulator, the spectral uniformity across the test plane should also be evaluated and we discuss a method for performing this evaluation that is well suited to a solar cell performance testing application. One major advantage of this simulator is the ability to easily adjust the spectral output as needed in multijunction PV cell measurements and we also discuss this application here.

LED↗
DOE OSTI2023

A New Method for the Evaluation of Majority and Minority Carrier Contact Resistivity of Polysilicon on Oxide Contacts

In this contribution we present a novel technique for characterizing the majority and minority carrier contact resistivity in polysilicon on oxide passivating contacts. Traditionally, contact resistivity is measured through the Transfer Length Method (TLM). This method presents difficulties when measuring the minority carrier contact due to the presence of a blocking diode which prevents current flow between the pads. Our novel method is performed by creating a unipolar device which has the same contact on both sides (either symmetric n-type or symmetric p-type) and metalizing the device with a grid on one side, and a full metal contact on the back (the same pattern that will be used in a final cell). We then measure the resistance across the device at increasing illumination. Since the resistivity of the wafer is a function of carrier density, when increasing illumination, the wafer resistivity decreases. We can then fit modeling equations to the measured resistivity and extrapolate the fit to infinite illumination where only the contact resistivity is measured to accurately measure both the minority and majority carrier contact resistivity.

current measurement↗
DOE OSTI2024

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias hinders their commercialization. In this work, we demonstrate that by employing a monolithic perovskite/silicon tandem structure, the perovskite subcell can be effectively protected by the silicon subcell under reverse bias, owing to the low reverse-bias diode current of the silicon subcell. As a result, the tested perovskite/silicon tandem devices show superior reverse-bias resilience compared to perovskite single-junction devices in both long-term reverse voltage biasing tests at the single-cell level and partial shading tests at the module level. These results highlight that, compared to other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse-bias and partial shading challenge, which is a considerable advantage towards commercialization.

commercialization↗
DOE OSTI2021

Quench Protection Study of Superconducting Magnets for the Materials Plasma Exposure Experiment

To advance the understanding of plasma material interactions, the Material Plasma Exposure eXperiment (MPEX) is a new linear plasma device that will generate and deliver plasma relevant to future fusion reactor divertors. The operation of MPEX is planned to be steady-state in order to facilitate high fluence exposures of plasma facing materials and components. The desire for steady-state operation along with the magnetic field requires the utilization of superconducting coils. The superconducting magnet system for MPEX has been developed. The baseline model has six superconducting magnet and one room-temperature magnet subsystems. In order to protect multiple superconducting magnet systems, quench analysis was carried out to determine the best protection approach for each magnet type. Because the mutual inductance accounts for approximately 35% of the stored energy in the entire system, this must be considered when determining the peak voltages and temperatures during a quench. Two approaches for passive quench protection are considered: (1) self-protecting magnets and (2) use of diodes to sub-divide the coils. For both approaches, active quench detection will be used to ensure all coils are de-energized in the event of a quench. Results of the quench analysis for several quench scenarios are presented.

Burkhardt, Earle↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2023

Generalized Theory and Realization of Continuously Loss-Programmable Bandpass Filtering Attenuators

With the increased demand for modern wireless systems in various applications, the need for adjustable radio frequency (RF) systems has dramatically increased. These modern systems rely on operating in the microwave frequency spectrum (1 GHz to 1 THz) without interference from other devices while also retaining the ability to detect very low and very high power signals simultaneously. There is also an ever-increasing demand for reducing the cost, size, weight, and power (C-SWaP) of these modern RF systems, driving the demand for more agile filters in the microwave frequency spectrum. In this paper, a generalized theory of bandpass filtering attenuators (filtenuators) is proposed. A filtenuator is a device that combines the frequency- selective characteristics of a filter and the loss-programmable characteristics of an attenuator into a single component. The loss- programmable aspect of the filtenuator is based on the tuning of a π-network of resistances, which are implemented using PIN diodes to control the individual resistance values electronically. A loss-programmable, third-order Chebyshev bandpass filtenuator is designed, fabricated, and measured to verify the generalized theory. The filtenuator is designed to operate at 1 GHz and have a tunable attenuation range of 2-10 dB. This proposed filtenuator demonstrates the feasibility of a tunable, low C-SWaP solution to increase RF system dynamic range and a design process that allows for future development of filtenuators.

42 ENGINEERING↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2021

SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids

Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.

14 SOLAR ENERGY↗
DOE OSTI2021

Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid

Solid-state DC transformer to integrate low-voltage DC (LVDC) microgrid, wind turbine (WT) generator, photovoltaic (PV), and energy storage (ES) into medium-voltage (MV) direct-current (MVDC) distribution grids is attractive. This paper proposes current-source DC solid-state transformer (SST) for MVDC collection system in WT, PV, and ES farms or as an interface between the MVDC grid and the LVDC microgrid. Compared to conventional current-source converter (CSC) based SSTs, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the DC-link current path. Importantly, the proposed switch reduction scheme is generic and can be applied to the DC ports of DC-AC, AC-DC, or DC-DC hard-switching or soft-switching CSC-based SSTs. Based on this scheme, the proposed current-source DC SSTs are derived, which have reduced electrolytic-capacitor-less DC-link. The proposed DC SSTs also achieve single-stage isolated DC-DC or DC-AC conversion, full-range zero-voltage switching (ZVS) for main switches, zero-current switching (ZCS) for resonant switches, and controlled dv/dt. The proposed DC SSTs, operating principles, predictive control method, the ZVS, and the controlled dv/dt under voltage buck-boost ranges are verified with MV simulations and an experimental prototype based on SiC MOSFETs, diodes, and a nanocrystalline transformer.

14 SOLAR ENERGY↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗
DOE OSTI2024

Field-Emission Properties of Vertically Aligned Carbon Nanotube Cathodes of Varying Geometries

This work characterizes the bulk emission properties of carbon nanotube (CNT) forest cathodes fabricated with various geometries. Geometries explored include dense nanotube forests of varying height grown on 5×5 mm silicon (Si) substrates and discrete, patterned CNT pillars fabricated using UV photolithography. Dense forests heights ranged from 526 μ m to 1.41 mm, with packing fraction for dense forest calculated to be 4e10 nanotubes/cm2 based on an average nanotube separation distance of 100 nm for fixed growth dense forests. Patterned sample micro pillar heights ranged from 47 to 393 μ m with pillar widths on tested samples ranging from 250 to 270 μ m . Properties explored include emission current, turn-on field, and emission current performance over time. A parallel plate electron beam diode with a 100- μ m A-K gap and an automated test apparatus were developed to provide a configurable experiment that provides accurate and repeatable measurements for dc, dc sweep, and timed performance testing. Operating voltages for the voltage sweeps spanned from 0 to −350 V. Furthermore, testing has shown evidence of a hysteresis effect on the emission current tied to the applied field history as well as shifting of the turn-on field magnitude throughout the testing period, suggesting a conditioning effect during use. Three separate emission regions in the I–V curves during sweep testing have also been observed. In the geometric study, dense forests and patterned samples were sweep tested up to a peak applied voltage of −250 V, with the taller samples generally performing better. Currents produced in the geometric study from the dense forest emitters ranged from 36.8 to 572.34 μ A , with current densities ranging from 15 to 2.29 mA/cm2. Currents produced from the patterned micropillar emitters ranged from 39.4 to 317.51 μ A , with current densities ranging from 67 to 3 mA/cm2. DC time testing s...

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phase Locking of a THz QC-VECSEL to a Microwave Reference

We report high-resolution frequency study and phase locking have been performed on a terahertz (THz) quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) operating around 2.5 THz. A subharmonic diode mixer is used to down convert the THz signal to a 100 MHz intermediate frequency that is phase locked to a stable 100 MHz microwave reference. Between 90% and 95% of the QC-VECSEL signal is locked within 2 Hz of the multiplied RF reference, and amplitude fluctuations on the order of 1%–10% are observed, depending on the bias point of the QC-VECSEL. The bandwidth of the locking loop is ~1 MHz. Many noise peaks in the IF signal are observed, likely corresponding to mechanical resonances in the 10 Hz–10 kHz. These peaks are generally -30 to -60 dB below the main tone and are below the phase noise level of the multiplied RF reference that ultimately limits the phase noise of the locked QC-VECSEL.

42 ENGINEERING↗
DOE OSTI2022

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

42 ENGINEERING↗