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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Doping effect of Al in LLZO

Lithium ion batteries have become a common use in most electronic devices and transportation. However, the use of liquid electrolytes poses a serious safe hazard due to their high flammability. The narrow operating temperature and voltage windows also limit further improvement of the energy density.Solid-state lithium batteries with the use of more stable and safer solid electrolyte have garnered much attention and could be the future choice for battery technology. A promising potential candidate for the solid electrolyte component is the garnet type Li 7 La 3 Zr 2 O 12 (LLZO) ceramic material since it possesses high ionic conductivity at room temperature and enables the use of high capacity lithium anode and high voltage/capacity cathodes.However, to form the stable cubic phase of LLZO and high densification,high sintering temperatures above 1100°C is typically required, which causes Lithium loss of the system.Many studieshave been taken to dop LLZO with various precursors such as Ga, Ta, and Al to stabilize the cubic structure and reduce calcination temperature, while the doping effect on sintering densification is still unclear. In this study Al doping along with ball milling were explored to stabilize the cubic phase of LLZO and improve densification, while reducing the amount of impurity phases. Samples were synthesized from the precursors Li 2 CO 3 , Al 2 O 3 , La 2 O 3 , and ZrO 2 by ball milling followed by heat treatment for 12 hours at 1000°C. XRD with Rietveld fitting was used to determine the two phases of LLZO (cubic, tetragonal) and other possible secondary phases. Furthermore,SEM with top and cross sectional views was conducted to investigate the morphology and microstructure of sintered pellets.

36 MATERIALS SCIENCE↗
DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control

This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices such as vertical transistors. The general challenge to selective area regrowth of GaN is that the primary etch method, inductively coupled plasma (ICP), damages the crystal and causes high leakage when didoes are formed by regrowth on the etched surface. Our approach used low damage etch methods following ICP etch to remove crystal damage and reduced leakage in the regrown diode. This project demonstrated 1.6 kV etched-and-regrown GaN p-n diodes using planar (non-selective) regrowth and 840 V etched-and-regrown p-n diodes using selective area regrown. Enabling factors were use of a low-damage reactive ion etch (RIE) to remove damage caused by the primary ICP etch combined with a multi-step junction terminal extension (JTE) process. Deep level defect investigation quantitatively correlated a deep level near the middle of the GaN band gap with ICP etch-induced leakage that was greatly mitigated by using a slow, low damage RIE process. This research is economically feasible for commercialization because the processes used in this project, including substrate type and source, epitaxial crystal growth and fabrication techniques are all standard to the GaN semiconductor industry. The fundamental understanding and foundational ability to produce kV-class GaN p-n diodes through etch-and-regrowth provides a path to realize high power, high efficiency GaN power switches that can significantly outperform commercial devices for next-generation electrical power conversion and transmission systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Corrosion of U233-Doped Uranium Oxide using Microfluidics Methods

The aim of work this year has been to investigate the role of alpha (α)-radiation and hydrogen (H 2 ) on the corrosion of uranium oxide (UO 2 ) using a microfluidic device. The microfluidic device, termed the Particle-Attached Microfluidic Electrochemical Cell, (PAMEC), enables monitoring of the UO 2 electrochemical corrosion potential (E corr ) under different environments, including de-aerated conditions and in the presence of dissolved H 2 . The Si 3 N 4 window allows us to study morphological and chemical changes under an electron microscope. We have previously demonstrated that the PAMEC matches the results from bulk electrochemical tests with UO 2 [1]. We used the high specific activity uranium (U) isotope, 233 U, (t 1/2 = 160,000 years) incorporated into UO 2 , to generate a localized a-field. The objective of the experiments were to mimic the radiation environment that would be experience at the surface of aged spent nuclear fuel (SNF) during long-term geologic disposal under anoxic conditions. Wittman et al. [2] predicted that in the presence of a pure a-radiation field and under H 2 conditions, the concentration of the radiolytic oxidant H 2 O 2 would be suppressed or even eliminated. In a UO 2 corrosion experiment this would be exhibited through a lowering of the measured UO 2 corrosion potential compared to identical conditions in the absence of dissolved H 2 . We found that the predictions of Wittman and co-workers were supported and that the corrosion potential of the 233 U-doped UO 2 in solution lowered with presence of H 2 gas and increased in the absence of H 2 , when under anoxic conditions. The PAMEC experiments indicate that H 2 O 2 has been eliminated in a solution sparged with H 2 while exposed to an a-radiation field. The corrosion potential of the a-doped 233 U(10%)- 238 UO 2 in a solution sparged with Ar/H 2 matched the corrosion potential of 238 UO 2 in solution sparged with air. This clearly demonstrated that the H 2 O 2 had been eliminated and that the only oxidant present was O 2 in this system in complete agreement with the modeling results of Wittman et al. These results point to the need to improve the Fuel Matrix Degradation (FMD) Process Model training data set that is being used in the FMD surrogate model that is being developed for the repository program. The incorporation of realistic radiation chemistry will improve the scientific basis for the FMD Model.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Characterization of actinide abundances and isotopic compositions by HR-ICP-MS. Part 2: Results from actinide doping studies

Previously, we presented actinide isotopic and elemental data from fallout melt glass that was measured using high-resolution inductively coupled plasma mass spectrometry (HR-ICP-MS). Direct comparison between these measurements and ‘gold standard’ data obtained by multi-collector ICP-MS showed broad overlap, indicating that HR-ICP-MS is a potentially valuable technique for producing actinide elemental and isotopic data on a relatively rapid timescale. To test the usefulness of this technique further, we doped varying amounts of uranium certified reference materials (CRMs) into a rhyolitic rock standard to establish the effects of uranium concentration and isotopic composition on the accuracy of uranium isotopic analyses by HR-ICP-MS. This also enabled us to quantify peak tailing effects from 238 U on the measurement of 239 Pu and 237 Np, which in turn allows us to constrain correction factors based on measured 237 Np/ 238 U and 239 Pu/ 238 U ratios. A second doping study involved the addition of a mixed actinide standard into three samples with different matrix compositions (termed soil, city, and seawater) to assess whether sample chemistry affects the accuracy and precision of these analyses. Results suggest that this is not the case. Systematic offsets were not observed in elemental or isotopic data derived from the three matrix samples. Results indicate that useful actinide isotopic data can be obtained from whole rock solutions by HR-ICP-MS. Our findings also have implications for solid sampling techniques such as laser ablation ICP-MS, which do not require sample dissolution.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2024

Decoupling of Nitrogen and Oxygen Impurities in Nitrogen Doped SRF Cavities

The performance of superconducting radiofrequency (SRF) cavities is critical to enabling the next generation of efficient high-energy particle accelerators. Recent developments have focused on altering the surface impurity profile through \textit{in-situ} baking, furnace baking, and doping to introduce and diffuse beneficial impurities such as nitrogen, oxygen, and carbon. However, the precise role and properties of each impurity are not well understood. In this work, we attempt to disentangle the role of nitrogen and oxygen impurities through time-of-flight secondary ion mass spectrometry of niobium samples baked at temperatures varying from 75-800 $^\circ$C with and without nitrogen injection. From these results, we developed treatments recipe that decouple the effects of oxygen and nitrogen in doping treatments. Understanding how these impurities and their underlying mechanisms drive further optimization in the tailoring of impurity profiles for high-performance SRF cavities.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Transfer of EP and Doping Technology for PIP-II HB650 Cavities from Fermilab to Industry

Fermilab has optimized the surface processing conditions for PIP-II high beta 650 MHz cavities. This encompasses conditions for bulk electropolishing, heat treatment, nitrogen doping, post-doping final electropolishing, and post-processing surface rinsing. The technology has been effectively transitioned to industry. This paper highlights the efforts made to fine-tune the process and to smoothly share them with the partner labs and an associated vendor.

Chouhan, V.↗
DOE OSTI2020

Evaluation of Doped-LaCrO3 ceramics for high temperature sensor applications

The main objective of this work was to investigate the applicability of the doped-LaCrO3 system for electrical interconnects and sensor applications at temperatures >800°C. Various A- and B-site doping strategies were investigated, and the effect on their electrical conductivity, Seebeck coefficient, and thermal coefficient of expansion were characterized up to 1500ºC. Solid-state, co-precipitation and sol gel methods were used to synthesize the compositions, and the chemical/thermal stability, microstructural evolution, sintering and grain growth kinetics were investigated for these compositions by XRD, SEM and Rietveld methods. The materials showing the greatest promise were included within thick film thermistor and thermocouple sensor designs that were tested to 1500ºC in various gas environments (various pO2 concentrations).

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors

Metal halide perovskite (MHP) multiple quantum wells which consist of multilayers of alternate organic and inorganic layers exhibit large exciton binding energies due to the dielectric confinement between the inorganic and organic layers. These naturally formed multiple quantum wells have strong spin-orbit coupling (SOC) due to the presence of heavy elements in their crystal structures. Although the fundamental properties of 2D MHPs are far from being entirely understood, it is widely accepted that their band edge absorption coefficient results from strong exciton interactions. However, studies demonstrating how different exciton interactions and doping effects influence electronic traps and disorder on the band edge absorption coefficient of 2D MHPs have not been demonstrated. Understanding these interactions in MHPs will allow us to access low energy optical transitions for the fabrication of solution processable short-to-mid-wavelength IR photodetectors (1 – 8 μm). Moreover, upon doping, it is possible to move the Fermi energy into the conduction band (CB) to favorably promote the transport of charges in a working device. Herein, we study the development of 2D MHPs having strong SOC, high carrier mobility, and tunable quantum well structures. Our studies shed light on the design and modulation of fundamental physical phenomena by carefully elucidating the role of dopants (n-type and p-type), exciton heterogeneity, orientation, structure, and bias stress effects on the performance of MHPs as potential IR photodetectors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Platinum Deposited Nitrogen-Doped Vertically Aligned Carbon Nanofibers as Methanol Tolerant Catalyst for Oxygen Reduction Reaction with Improved Durability

Nitrogen doping in carbon materials can modify the employed carbon material’s electronic and structural properties, which helps in creating a stronger metal-support interaction. In this study, the role of nitrogen doping in improving the durability of Pt catalysts supported on a three-dimensional vertically aligned carbon nanofiber (VACNF) array towards oxygen reduction reaction (ORR) was explored. The nitrogen moieties present in the N-VACNF enhanced the metal-support interaction and contributed to a reduction in the Pt particle size from 3.1 nm to 2.3 nm. The Pt/N-VACNF catalyst showed better durability when compared to Pt/VACNF and Pt/C catalysts with similar Pt loading. DFT calculations validated the increase in the durability of the Pt NPs with an increase in pyridinic N and corroborated the molecular ORR pathway for Pt/N-VACNF. Moreover, the Pt/N-VACNF catalyst was found to have excellent tolerance towards methanol crossover.

Elangovan, Ayyappan↗
DOE OSTI2020

Thermal Stability and Decomposition Products of P-Doped Ferrihydrite

This work aimed to determine the effect of various amounts of P admixtures in synthetic ferrihydrite on its thermal stability, transformation processes, and the properties of the products, at a broad range of temperatures up to 1000 °C. A detailed study was conducted using a series of synthetic ferrihydrites Fe 5 HO 8 ·4H 2 O doped with phosphates at P/Fe molar ratios of 0.2, 0.5, and 1.0. Ferrihydrite was synthesized by a reaction of Fe 2 (SO 4 ) 3 with 1 M KOH at room temperature in the presence of K 2 HPO 4 at pH 8.2. The products of the synthesis and the products of heating were characterized at various stages of transformation by using differential thermal analysis accompanied with X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electron microscopy-energy dispersive X-ray spectroscopy. Coprecipitation of P with ferrihydrite results in the formation of P-doped 2-line ferrihydrite. A high P content reduces crystallinity. Phosphate significantly inhibits the thermal transformation processes. The temperature of thermal transformation increases from below 550 to 710–750 °C. Formation of intermediate maghemite and Fe-phosphates, is observed. The product of heating up to 1000 °C contains hematite associated with rodolicoite FePO 4 and grattarolaite Fe 3 PO 7 . Higher P content greatly increases the thermal stability and transformation temperature of rodolicoite as well.

thermal transformations↗
DOE OSTI2022

All-Ceramic Passive Wireless Temperature Sensor Realized by Tin-Doped Indium Oxide (ITO) Electrodes for Harsh Environment Applications

In this work, an all-ceramic passive wireless inductor–capacitor (LC) resonator was presented for stable temperature sensing up to 1200 °C in air. Instead of using conventional metallic electrodes, the LC resonators are modeled and fabricated with thermally stable and highly electroconductive ceramic oxide. The LC resonator was modeled in ANSYS HFSS to operate in a low-frequency region (50 MHz) within 50 × 50 mm geometry using the actual material properties of the circuit elements. The LC resonator was composed of a parallel plate capacitor coupled with a planar inductor deposited on an Al2O3 substrate using screen-printing, and the ceramic pattern was sintered at 1250 °C for 4 h in an ambient atmosphere. The sensitivity (average change in resonant frequency with respect to temperature) from 200–1200 °C was ~170 kHz/°C. The temperature-dependent electrical conductivity of the tin-doped indium oxide (ITO, 10% SnO2 doping) on the quality factor showed an increase of Qf from 36 to 43 between 200 °C and 1200 °C. The proposed ITO electrodes displayed improved sensitivity and quality factor at elevated temperatures, proving them to be an excellent candidate for temperature sensing in harsh environments. The microstructural analysis of the co-sintered LC resonator was performed using a scanning electron microscope (SEM) which showed that there are no cross-sectional and topographical defects after several thermal treatments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Topological Doping and Superconductivity in Cuprates: An Experimental Perspective

Hole doping into a correlated antiferromagnet leads to topological stripe correlations, involving charge stripes that separate antiferromagnetic spin stripes of opposite phases. The topological spin stripe order causes the spin degrees of freedom within the charge stripes to feel a geometric frustration with their environment. In the case of cuprates, where the charge stripes have the character of a hole-doped two-leg spin ladder, with corresponding pairing correlations, anti-phase Josephson coupling across the spin stripes can lead to a pair-density-wave order in which the broken translation symmetry of the superconducting wave function is accommodated by pairs with finite momentum. This scenario is now experimentally verified by recently reported measurements on La2−xBaxCuO4 with x=1/8. While pair-density-wave order is not common as a cuprate ground state, it provides a basis for understanding the uniform d-wave order that is more typical in superconducting cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Local Atomic Configuration in Pristine and A-Site Doped Silver Niobate Perovskite Antiferroelectrics

Antiferroelectrics have attracted increasing research interests in recent years due to both their great potential in energy storage applications and intriguing structural characteristics. However, the links between the electrical properties and structural characteristics of distorted perovskite antiferroelectrics are yet to be fully deciphered. Here, we adopt local-structure methods to elucidate the nanoscale atomic structure of AgNbO3-based antiferroelectrics and their structural evolution upon La doping. The local structural features including interatomic distance distributions and atomic displacements have been analyzed using neutron small-box pair distribution function (PDF) refinement in conjunction with large-box Reverse Monte Carlo modelling. Our results highlight the correlation of cation displacements in AgNbO 3 and its disruption by the incorporation of La, apparently in corroboration with the observed anomalous dielectric properties. Spatial ordering of cation vacancies is observed in La-doped AgNbO 3 samples, which coordinates with oxygen octahedral tilting to relieve lattice strain. These results provide renewed insights into the atomic structure and antiferroelectric phase instabilities of AgNbO 3 and relevant perovskite materials, further lending versatile opportunities for enhancing their functionalities.

36 MATERIALS SCIENCE↗
DOE OSTI2024

MOCVD growth of Si-doped α-(AlGa) 2 O 3 on m-plane α-Al 2 O 3 substrates

We reported the growth of (AlGa) 2 O 3 layers on ($10\overline{10}$) α-Al 2 O 3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa) 2 O 3 layers. In the Ga 2 O 3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h –1 at 650 °C. Sheet resistance and electrical conductivity of the Ga 2 O 3 layers with a Si concentration of 3 × 10 20 cm –3 were 1 × 10 4 Ω/square and 8.3 S cm –1 , respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa) 2 O 3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa) 2 O 3 layers by Si doping (2 × 10 –9 S cm –1 in the sample with an Al composition of 56%). Finally, hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells

Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.

Berman, P. A.↗