Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “CARRIER MODULATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 μm window equal to 42% for U{sub bias} = −0.1 V, 77 K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Graphene-based modulation-doped superlattice structures

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed consisting of periodically arranged alternate layers: InAs/graphene/GaAs/graphene/GaSb. The undoped graphene/GaAs/graphene structure displays a relatively high conductance and enhanced mobilities at increased temperatures unlike the modulation-doped superlattice structure, which is more steady and less sensitive to temperature and the robust electrical tunable control on the screening length scale. The thermionic current density exhibits enhanced behavior due to the presence of metallic (graphene) monolayers in the superlattice structure. The proposed superlattice structure might be of great use for new types of wide-band energy gap quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr 3 perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr 3 single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. In conclusion, our findings suggest that electron–phonon coupling at the twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr 3 perovskites.

Carrier dynamics↗
DOE OSTI2019

Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement

Cu 2 Se thin films provide a promising route toward relatively safe, sustainable and solution processed thermoelectric (TE) modules in contrast to more expensive and toxic materials currently on the market such as Bi2Te3. Cu 2 Se is known in the TE community for its high performance at high temperature and has recently attracted attention from its large theoretically predicted figure of merit at room temperature. Unfortunately, one of the main limitations encountered so far in Cu 2 Se thin films is that the carrier concentrations are not optimized for TE operation after solution processing. In this work, we conduct a comprehensive study of the structural, optical, and TE properties of Cu 2 Se thin films and demonstrate that nonoptimized carrier concentrations in these films lead to observations of poor performance at room temperature. Through a simple soaking procedure in a Cu+ ion solution for only a few minutes, we demonstrate a 200-300% increase in power factor. This soaking process pushes the carrier concentration of the Cu 2 Se thin film toward its optimal value for TE operation and marks the highest TE performance for any solution processed Cu 2 Se thin film at room temperature thus far. If the performance can be further optimized at room temperature, Cu 2 Se thin films will be the material of choice to utilize in TE modules for powering miniature electronics and sensors, which has been an increasingly popular and rapidly expanding market.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

The occurrence of spontaneous lateral phase separation during thin film growth of Al{sub x}In{sub 1−x}P by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap Al{sub x}In{sub 1−x}P deposited on metamorphic In{sub y}Ga{sub 1−y}As graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

14 SOLAR ENERGY↗
NASA NTRS1987

Space Station accommodation of attached payloads

The Attached Payload Accommodation Equipment (APAE), which provides the structure to attach payloads to the Space Station truss assembly, to access Space Station resources, and to orient payloads relative to specified targets, is described. The main subelements of the APAE include a station interface adapter, payload interface adapter, subsystem support module, contamination monitoring system, payload pointing system, and attitude determination system. These components can be combined to provide accommodations for small single payloads, small multiple payloads, large self-supported payloads, carrier-mounted payloads, and articulated payloads. The discussion also covers the power, thermal, and data/communications subsystems and operations.

Browning, Ronald K.↗
NASA NTRS1993

The MSAT spacecraft of Telesat Mobile Inc.

The MSAT spacecraft of the Canadian mobile satellite operator, Telesat Mobile Inc. (TMI) is described. When launched in 1994, the large geostationary MSAT spacecraft which is currently under construction by Hughes Aircraft Co. and Spar Aerospace Ltd. will enable TMI to provide mobile and transportable communications services to its customers even in the most remote parts of the North American continent. The main elements of TMI's mobile satellite system (described in a companion paper) are the space segment and the ground segment. TMI's space segment will employ one of two nearly identical satellites, one of which will be owned and operated by TMI, the other by the U.S. mobile satellite operator, American Mobile Satellite Corporation (AMSC). The two companies are participating in a joint spacecraft procurement in order to reduce the nonrecurring costs and to ensure system compatibility between the two systems; and they have also agreed to provide in-orbit backup to each other in the event of a catastrophic satellite failure. The program status, performance requirements, main parameters, and configuration of the MSAT spacecraft are reviewed. The major features of the communications subsystem are discussed in some detail, and a brief summary is presented of the spacecraft service module. Key technology items include the L-band RF power amplifier, which must operate with a high DC to RF power efficiency and generate low intermodulation when loaded with multi-carrier signals; and the large diameter deployable L-band antenna. The development status and expected performance of these spacecraft components is examined.

Bertenyi, E.↗
NASA NTRS2004

Reduction of Phase Ambiguity in an Offset-QPSK Receiver

Proposed modifications of an offset-quadri-phase-shift keying (offset-QPSK) transmitter and receiver would reduce the amount of signal processing that must be done in the receiver to resolve the QPSK fourfold phase ambiguity. Resolution of the phase ambiguity is necessary in order to synchronize, with the received carrier signal, the signal generated by a local oscillator in a carrier-tracking loop in the receiver. Without resolution of the fourfold phase ambiguity, the loop could lock to any of four possible phase points, only one of which has the proper phase relationship with the carrier. The proposal applies, more specifically, to an offset-QPSK receiver that contains a carrier-tracking loop like that shown in Figure 1. This carrier-tracking loop does not resolve or reduce the phase ambiguity. A carrier-tracking loop of a different design optimized for the reception of offset QPSK could reduce the phase ambiguity from fourfold to twofold, but would be more complex. Alternatively, one could resolve the fourfold phase ambiguity by use of differential coding in the transmitter, at a cost of reduced power efficiency. The proposed modifications would make it possible to reduce the fourfold phase ambiguity to twofold, with no loss in power efficiency and only relatively simple additional signal-processing steps in the transmitter and receiver. The twofold phase ambiguity would then be resolved by use of a unique synchronization word, as is commonly done in binary phase-shift keying (BPSK). Although the mathematical and signal-processing principles underlying the modifications are too complex to explain in detail here, the modifications themselves would be relatively simple and are best described with the help of simple block diagrams (see Figure 2). In the transmitter, one would add a unit that would periodically invert bits going into the QPSK modulator; in the receiver, one would add a unit that would effect different but corresponding inversions of bits coming out of the QPSK demodulator. The net effect of all the inversions would be that depending on which lock point the carrier-tracking loop had selected, all the output bits would be either inverted or non-inverted together; hence, the ambiguity would be reduced from fourfold to twofold, as desired.

Berner, Jeff↗
DOE OSTI2019

Directional massless Dirac fermions in a layered van der Waals material with one-dimensional long-range order

One or a few layers of van der Waals (vdW) materials are promising for applications in nanoscale electronics. Established properties include high mobility in graphene, a large direct gap in monolayer MoS 2 , the quantum spin Hall effect in monolayer WTe 2 and so on. These exciting properties arise from electron quantum confinement in the two-dimensional limit. In this work, we use angle-resolved photoemission spectroscopy to reveal directional massless Dirac fermions due to one-dimensional confinement of carriers in the layered vdW material NbSi 0.45 Te 2 . The one-dimensional directional massless Dirac fermions are protected by non-symmorphic symmetry, and emerge from a stripe-like structural modulation with long-range translational symmetry only along the stripe direction as we show using scanning tunnelling microscopy. Our work not only provides a playground for investigating further the properties of directional massless Dirac fermions, but also introduces a unique component with one-dimensional long-range order for engineering nano-electronic devices based on heterostructures of vdW materials.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Electroactive functional hybrid layered nanocomposites

Two methodologies to build new nanostructured hybrid layered nanocomposites are presented. The first one involves the preparation of hybrid metal/polymer nanolayers (NLs) by combining two monolayer preparation techniques: Horizontal Precipitation Langmuir Blodgett method (HP-ML), for copolymer monolayers and sputter deposition technique, for Au NLs deposition. The second methodology is aimed to prepare regular arrays of nanopores, with diameter ranging between 40-100 nm, in ultra-thin films of electroactive polymers, to obtain embedded regular arrays of nanopores filled by a further electroactive organic component. The produced hybrid MLs have been characterized by means of X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and Grazing Incidence X-ray Diffraction (GI-XRD). In the first case, current-voltage (I-V) measurements demonstrate that the multilayers exhibit a bipolar conduction behaviour (electrons and holes carriers), with a peculiar transition in the nature of the majority carriers (from holes to electrons) above a threshold number of bilayers. In the second case, it is found that the degree of pore filling, as well as the polymer crystallinity can be easily modulated, prompting the tuning of the photoresponse of the nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Diffusion length in nanoporous TiO{sub 2} films under above-band-gap illumination

We determined the carrier diffusion lengths in TiO{sub 2} nanoporous layers of dye-sensitized solar cells by using scanning photocurrent microscopy using an ultraviolet laser. Here, we excited the carrier directly in the nanoporous layers where the diffusion lengths were found to 140 μm as compared to that of visible illumination measured at 90 μm. The diffusion length decreased with increasing laser modulation frequency, in which we determined the electron lifetimes and the diffusion coefficients for both visible and UV illuminations. The diffusion lengths have been studied in terms of the sintering temperatures for both cells with and without binding molecules. We found a strong correlation between the diffusion length and the overall light-to-current conversion efficiency, proving that improving the diffusion length and hence the interparticle connections, is key to improving cell efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2019

All-optical tuning of symmetry protected quasi bound states in the continuum

We demonstrate all-optical switching of high quality factor quasibound states in the continuum resonances in broken symmetry GaAs metasurfaces. By slightly breaking the symmetry of the GaAs nanoresonators, we enable leakage of symmetry protected bound states in the continuum (BICs) to free space that results in sharp spectral resonances with high quality factors of ~500. We tune the resulting quasi-BIC resonances with ultrafast optical pumping at 800 nm and observe a 10 nm spectral blue shift of the resonance with pump fluences of less than 100 μJ cm -2 . The spectral shift is achieved in an ultrafast time scale (<2.5 ps) and is caused by a shift in the refractive index mediated by the injection of free carriers into the GaAs resonators. An absolute reflectance change of 0.31 is measured with 150 μJ cm -2 . Our results demonstrate a proof-of-concept that these broken symmetry metasurfaces can be modulated or switched at ultrafast switching speeds with higher contrast at low optical fluences (<100 μJ cm-2) than conventional Mie-metasurfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects

The growth of artificial intelligence applications demands ever larger and more complex deep learning models, dominating today's—and tomorrow's—data center and high-performance computing systems. While traditional electronics are failing to keep pace with application demands, silicon photonic (SiPh) interconnects have emerged as a necessary technology to support these systems. SiPh-driven wavelength-division multiplexing (WDM) offers a particularly promising path toward supporting incredibly high-aggregate link bandwidth in a compact and efficient form factor. One of the basic building blocks of these integrated WDM interconnects is the SiPh resonator. Their inherent wavelength selectivity and compact footprint allow for efficient data transmission multiplexed across dozens of carrier wavelengths. Used as add-drop (AD) filters, SiPh resonators are critical to constructing integrated tunable wavelength-selective optical circuit switches as well as for demultiplexing the different carrier wavelengths toward independent wavelength-insensitive photodiodes in a dense wavelength-division multiplexing receiver. Resonators in the all-pass (AP) configuration are widespread as well, allowing for wavelength-selective modulation to drive aggregate link bandwidths far beyond the individual channel data rate. Unlike SiPh Mach–Zehnder modulators (MZM), resonant modulators can be driven using low, complementary metal-oxide-semiconductor drive voltages, allowing for tight co-integration between photonic integrated circuits, fabricated with larger process node technologies, and electronic integrated circuits, designed to exploit the advantages of the latest node. To push toward practical peta-scale interconnects, a comprehensive review of SiPh resonators is required, addressing bottlenecks and design constraints at both the architecture and device levels. We first describe the predominant integrated link architectures and identify their limits. We then discuss the device-level design considerations that can be made for both AD and AP configuration resonators to overcome the system level limits with novel resonator device designs. Analytical models and numerical simulation of resonators are validated by experimental measurement of devices fabricated in a commercial 300-mm foundry, showing a clear path toward volume manufacturing. The demonstrated resonant modulators and filters support the feasibility of increasing the aggregate bandwidth of resonator-driven SiPh interconnects into the peta-scale regime.

42 ENGINEERING↗
DOE OSTI2022

Autonomous Wireless Technology Detection in Seamless IoT Applications

The ever-increasing use of Internet of Things (IoT) devices results in the implementation of multiple wireless technologies that would not only cater their data rate requirements but also support various applications. To optimize the energy efficiency and security of the wireless transmission, it is imperative to identify the wireless technologies in various IoT implementations. Many of the existing approaches are based on measuring only the receiving signal strength indicator (RSSI). However, such approaches may not work well because of transmit power control and complex channel variations among different wireless technologies. In this article, we propose an autonomous wireless detection scheme that considers multiple distinguishable physical (PHY)-layer settings for real-time identification of wireless technologies for real-time applications. Specifically, the proposed scheme relies on the PHY-layer measurements of the targeted spectrum. Transmission settings, such as bandwidth, carrier frequency, and RSSI are estimated from the raw in-phase and quadrature-phase (I/Q) measurements. In addition, a symbol-level extraction scheme is implemented to extract unique features of modulation settings. These aforementioned features are applied to a machine learning process to identify the received wireless technologies. Compared with raw I/Q measurements, the extracted features are much simplified and, thus, the machine learning classifier can be designed with a simple structure for fast processing on IoT nodes. Finally, the proposed schemes are primarily evaluated theoretically, followed by implementing them on a USRP software-defined radio (SDR)-based hardware testbed. The evaluation results demonstrate high accuracy in the real-time detection of different wireless technologies for seamless IoT applications.

42 ENGINEERING↗
DOE OSTI2020

Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate

Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Method and apparatus for receiving and tracking phase modulated signals

An apparatus and technique are described for receiving and tracking analog or digital phase modulated signals from 0 deg to 360 deg phase shift. In order to track a signal with many phases, a detector discerns the phase modulation of the incoming signal and a phase shifter generates a negative phase shift opposite in angle to the detected phase angle. This produces a converted series sideband component barrier signal. The residual carrier signal and the converted series sideband component carrier are added together to produce a tracking carrier signal. The tracking carrier signal is multiplied with the output from a voltage controlled oscillator in the tracking loop to obtain an error signal which drives the voltage controlled oscillator and tracks the incoming signal frequency. The technique is less susceptible to carrier interference which may degrade tracking and tracking may be performed at lower signal to noise ratios and for lower input signal power levels.

Villarreal, S.↗