Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Buffer Layer”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

AlF 3 Surface-Coated Li[Li 0.2 Ni 0.17 Co 0.07 Mn 0.56 ]O 2 Nanoparticles with Superior Electrochemical Performance for Lithium-Ion Batteries

For Li-rich layered cathode materials considerable attention has been paid owing to their high capacity performance for Li-ion batteries (LIBs). In our work, layered Li-rich Li[Li 0.2 Ni 0.17 Co 0.07 Mn 0.56 ]O 2 nanoparticles are surface-modified with AlF 3 through a facile chemical deposition method. The AlF 3 surface layers have little impact on the structure of the material and act as buffers to prevent the direct contact of the electrode with the electrolyte; thus, they enhance the electrochemical performance significantly. The 3 wt% AlF 3 -coated Li-rich electrode exhibits the best cycling capability and has a considerably enhanced capacity retention of 83.1% after 50 cycles. Moreover, the rate performance and thermal stability of the 3 wt% AlF3-coated electrode are also clearly improved. Finally, surface analysis indicates that the AlF 3 coating layer can largely suppress the undesirable growth of solid electrolyte interphase (SEI) film and, therefore, stabilizes the structure upon cycling.

25 ENERGY STORAGE↗
DOE OSTI2014

Photo-crystallization in a-Se layer structures: Effects of film-substrate interface-rigidity

Amorphous selenium (a-Se) films deposited on rigid substrates can undergo photo-induced crystallization (PC) even at temperatures (T) well below the glass transition, T{sub g} ∼ 313 K. Substrate-generated shear strain is known to promote the PC process. In the present work, we explore the influence of different substrates (Si and glass), and different film-layer-substrate combinations, on the PC in a variety of a-Se films and film-structures. The intermediate layers (indium tin oxide and polyimide) are chosen to promote conductivity and/or to be a buffer against interface strain in structures of interest for digital imaging applications. The PC characteristics in these samples are evaluated and compared using optical microscopy, atomic-force microscopy, Raman mapping, and T-dependent Raman spectroscopy. Both the presence of a soft intermediate layer, and the thermal softening that occurs for T increasing through T{sub g}, inhibit the tendency for the onset of PC. The extensive PC mapping results in the wide range of samples studied here, as well as the suppression of PC near T{sub g} in this array of samples, strongly support the generality of this behavior. As a consequence, one may expect that the stability of a-Se films against PC can be enhanced by decreasing the rigidity of the film-substrate interface. In this regard, advanced film structures that employ flexible substrates, soft intermediate layers, and/or are designed to be operated near T{sub g} should be explored.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spontaneous Strain Buffer Enables Superior Cycling Stability in Single-Crystal Nickel-Rich NCM Cathode

The capacity degredation in layered Ni-rich LiNixCoyMnzO2 (x >= 0.8) cathode largely originated from drastic surface reactions and intergranular cracks in polycrystalline particles. Herein, we report a highly stable single- crystal LiNi0.83Co0.12Mn0.05O2 cathode material, which can deliver a high specific capacity (similar to 209 mAh g(-1) at 0.1 C, 2.8-4.3 V) and meanwhile display excellent cycling stability (>96% retention for 100 cycles and >93% for 200 cycles). By a combination of in situ X-ray diffraction and in situ pair distribution function analysis, an intermediate monoclinic distortion and irregular H3 stack are revealed in the single crystals upon charging-discharging processes. These structural changes might be driven by unique Li-intercalation kinetics in single crystals, which enables an additional strain buffer to reduce the cracks and thereby ensure the high cycling stability.

in situ synchrotron characterization↗
DOE OSTI2026

Power and particle exhaust for the ARC fusion power plant

To successfully show that fusion is an attractive energy source, the ARCTM fusion power plant will need to operate with a robust, integrated power and particle exhaust solution. To maximise ARC’s fusion power output while avoiding excessive erosion of the plasma-facing components, we will need to radiatively dissipate most of the power crossing the last-closed flux surface, injecting radiating impurities such as argon or neon to access divertor detachment. Divertor detachment will need to be integrated with a high-performance core plasma, and with efficient impurity pumping to prevent the accumulation of helium ash in the core. To access and control detachment in high-performance plasmas, we have designed ARC with up–down-symmetric divertors, with secondary X-points in long, tightly baffled outer legs. Using a core-edge modelling workflow, we predict that with this divertor design, ARC will access detachment with modest argon seeding in the divertor (c Ar,div ∼0.9%), which should have minimal impact on the core ( Z eff,core <0.5) for reasonable argon enrichment (c Ar,div /c Ar,core =6). Due to the high predicted divertor neutral pressure (p div ∼20 Pa), we predict that ARC will sufficiently pump helium to limit ash accumulation in the core (c He,core <2%) for a helium enrichment of c He,div /c He,core =0.4. ARC’s divertor design is expected to increase the stability of a detachment front in the outer divertor leg, helping to prevent divertor reattachment during smaller heat-flux transients such as scrape-off-layer filaments associated with the quasi-continuous exhaust regime. However, this buffering will not be sufficient to prevent divertor reattachment during large type-I edge-localised modes (ELMs), and as such these will need to be avoided on ARC. Experiments on SPARC will be used to select an integrated scenario which avoids or mitigates type-I-ELMs while maintaining access to detachment, good core fusion performance and sufficient impurity exhaust. SPARC experiments will also be used to finalise ARC’s divertor design, by studying the impact of magnetic and first-wall geometry on detachment stability, impurity enrichment and neutral baffling under conditions similar to those expected for ARC. In conclusion, our analysis finds that ARC will have a viable power and particle exhaust solution which is compatible with high-power operations, and this solution will be validated in experiments on SPARC.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 10{sup 3} Ω{sub ◻} whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm{sup 2}. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Analog Delta-Back-Propagation Neural-Network Circuitry

Changes in synapse weights due to circuit drifts suppressed. Proposed fully parallel analog version of electronic neural-network processor based on delta-back-propagation algorithm. Processor able to "learn" when provided with suitable combinations of inputs and enforced outputs. Includes programmable resistive memory elements (corresponding to synapses), conductances (synapse weights) adjusted during learning. Buffer amplifiers, summing circuits, and sample-and-hold circuits arranged in layers of electronic neurons in accordance with delta-back-propagation algorithm.

Eberhart, Silvio↗
DOE OSTI2015

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaN layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
DOE OSTI2020

Enhanced NO, CO and C 3 H 6 conversion on Pt/Pd catalysts: Impact of oxygen storage material and catalyst architecture

Simultaneous conversion of NO, CO and C 3 H 6 under stoichiometric conditions was carried out on washcoated monoliths containing oxygen storage material (OSM)-promoted mixed Platinum group metals (PGM: Pt(95 %)/Pd(5 %)), to evaluate OSM promotion and to identify the best architecture. The studied OSMs include ceria-zirconia (Ce 0.3 Zr 0.7 O 2 ; CZO) and mixed metal oxide spinel (Mn 0.5 Fe 2.5 O 4 ; MFO). PGM supported directly on the OSM was found to be the best design for CZO, leading to a ~70 °C simultaneous decrease in the light-off temperature (T 80 ; feed temperature giving 80 % conversion) for NO, CO and C 3 H 6 conversion compared to the alumina-supported PGM. Close coupling between the PGM and CZO is responsible for the activity promotion. In contrast, a dual-layer architecture (top PGM layer, bottom MFO layer) outperformed the MFO-supported PGM catalyst. The dual-layer PGM-MFO catalyst decreased the T 80 by ~50 °C for NO, CO and C 3 H 6 conversion compared to the PGM-only catalyst. Enhancement obtained with the dual-layer PGM-MFO architecture relies on a direct catalytic contribution from the spinel. During lean/rich modulation the addition of CZO or spinel helps to mitigate the detrimental impact of modulation on NO, CO and C 3 H 6 conversion above 400 °C. The data suggest that both CZO and MFO can buffer lean/rich modulation but exhibit preference to different reductants; CZO-supported PGM and dual-layer PGM-MFO show no conversion decrease during modulation for CO or C 3 H 6 modulation, respectively. Dynamic oxygen storage capacity (DOSC) measurements show that the spinel exhibits ~10 times higher DOSC than CZO for both CO and C 3 H 6 reductants. Both CO and C 3 H 6 are equally effective reductants for the MFO but CO is better for CZO and PGM-deposited CZO. The study provides useful insight into benefits of OSM and provides guidance for optimization of the multi-component PGM + OSM catalyst composition and architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2015

Implicit Large-Eddy Simulations of Zero-Pressure Gradient, Turbulent Boundary Layer

A set of direct simulations of zero-pressure gradient, turbulent boundary layer flows are conducted using various span widths (62-630 wall units), to document their influence on the generated turbulence. The FDL3DI code that solves compressible Navier-Stokes equations using high-order compact-difference scheme and filter, with the standard recycling/rescaling method of turbulence generation, is used. Results are analyzed at two different Re values (500 and 1,400), and compared with spectral DNS data. They show that a minimum span width is required for the mere initiation of numerical turbulence. Narrower domains ((is) less than 100 w.u.) result in relaminarization. Wider spans ((is) greater than 600 w.u.) are required for the turbulent statistics to match reference DNS. The upper-wall boundary condition for this setup spawns marginal deviations in the mean velocity and Reynolds stress profiles, particularly in the buffer region.

Turblent boundary layer↗
DOE OSTI2012

Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates

Conductive LaNiO{sub 3} (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 Degree-Sign C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 Degree-Sign C to (110) at 600 Degree-Sign C at deposition temperature of 200-600 Degree-Sign C. The room temperature resistivity was 2250-3400 {mu}{Omega}-cm at the range of 200 Degree-Sign C {approx}500 Degree-Sign C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 Degree-Sign C, and the resistivity value was 280 {mu}{Omega}-cm at a postannealing temperature of 600 Degree-Sign C. Subsequently, sol-gel derived (Pb,La)(Zr,Ti)O{sub 3} thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The Role of Oxygen Transfer in Oxide Heterostructures on Functional Properties

A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO 3 (STO) heterostructures. By using La 0.95 Sr 0.05 TiO 3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO 3 , LaAlO 3 , (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 , and CeO 2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10 –4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. Here, the observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

ExaHDF5: Delivering Efficient Parallel I/O on Exascale Computing Systems

Scientific applications at exascale generate and analyze massive amounts of data. A critical requirement of these applications is the capability to access and manage this data efficiently on exascale systems. As such, parallel I/O, the key technology enables moving data between compute nodes and storage, faces monumental challenges from new applications, memory, and storage architectures considered in the designs of exascale systems. As the storage hierarchy is expanding to include node-local persistent memory, burst buffers, etc., as well as disk-based storage, data movement among these layers must be efficient. Parallel I/O libraries of the future should be capable of handling file sizes of many terabytes and beyond. In this paper, we describe new capabilities we have developed in Hierarchical Data Format version 5 (HDF5), the most popular parallel I/O library for scientific applications. HDF5 is one of the most used libraries at the leadership computing facilities for performing parallel I/O on existing HPC systems. The state-of-the-art features we describe include: Virtual Object Layer (VOL), Data Elevator, asynchronous I/O, full-featured single-writer and multiple-reader (Full SWMR), and parallel querying. In this paper, we introduce these features, their implementations, and the performance and feature benefits to applications and other libraries.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Along the Channel Gradients Impact on the Spatioactivity of Gas Diffusion Electrodes at High Conversions during CO 2 Electroreduction

Results of a 2-D transport model for a gas diffusion electrode performing CO 2 reduction to CO with a flowing catholyte are presented, including the concentration gradients along the flow cell, spatial distribution of the current density and local pH in the catalyst layer. The model predicts that both the concentration of CO 2 and the buffer electrolyte gradually diminish along the channels for a parallel flow of gas and electrolyte as a result of electrochemical conversion and nonelectrochemical consumption. At high single-pass conversions, significant concentration gradients exist along the flow channels leading to large local variations in the current density (>150 mA/cm 2 ), which becomes prominent when compared to ohmic losses. In addition, concentration overpotentials change dramatically with CO 2 flow rate, which results in significant differences in outlet concentrations at high conversions. The outlet concentration of CO attains a maximum of 80% along with 5% CO 2 and 15% H 2 , although the maximum single-pass conversion is limited to below 60% due to homogeneous consumption by the electrolyte. Fundamental and practical implications of our findings on electrochemical CO 2 reduction are discussed with a focus on the trade-off between high current density operation and high single-pass conversion efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

EBS Report - LANL Experimental update of buffer/backfill at elevated P,T

The Used Fuel Disposition campaign is presently investigating various generic repository options for disposal of used fuel. Of interest are the disposal of high heat load canisters (up to 300 °C), which may allow for a reduced repository footprint. The focus of this experimental work is to increase our understanding on the stability of bentonite barriers under different geochemical and mineralogical conditions other than what has been previously investigated. Experiments were performed at 150 – 160 bars at temperatures up to 300 °C for five to six weeks. Unprocessed Wyoming bentonite was saturated with a K-Ca-Na-Cl-rich water at a 9:1 water:rock ratio. Experiments contained various steel plates or Cu-foil and were buffered to low Eh conditions using magnetite and metallic iron. Other experiments for international EBS research included mixed buffers and a heated bentonite with 20 wt. % free moisture for LBNL. The mixed buffer experiments (bentonite-graphite, bentonite-quartz sand) were conducted to investigate potential mineralogic/petrologic changes to mixed buffer systems proposed by the German nuclear repository program. Reaction products associated with the international EBS research were characterized by LANL with thermal-mechanical properties to be characterized by LBNL. The pH, K + , and Ca 2+ concentrations dropped, while SiO 2(aq) , Na + , and SO 4 2- concentrations increased throughout the experiments. The alkali and alkaline earth metals aqueous concentrations appear to be buffered via the montmorillonite and clinoptilolite exchange reactions. Illite or illite/smectite mixed-layer formation is significantly retarded in the closed system due to Na+ and SiO2(aq) accumulation and limited K + supply. Precursor clinoptilolite underwent extensive dissolution during the six week, 300 °C experiments subsequently producing a high-silicon analcime in addition to authigenic silica phases. Analcime and feldspar formation partially sequesters aqueous Al 3+ , thereby potentially inhibiting illitization. Associated with the zeolite alteration is a ~ 17 % volume decrease (assuming quartz formation) that translates into ~ 2% volume loss in the bulk bentonite. Pyrite decomposition is first observed at ~210 °C, generating available H 2 S (aq,g) that reacts with metal plates or evolves as a gas. The copper rapidly degrades in the presence of H 2 S (aq,g) , resulting in the formation of a chalcocite crust on the copper. A layer of Fe-saponite (or rarely, chlorite) forms at the steel bentonite interface, potentially acting as a passivating agent to retard further metal corrosion. Zeolite mineralogy alteration, metal-bentonite interface reactions, and illitization retardation under these experimental repository conditions are important considerations for the long-term stability evaluation of a used fuel repository.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1988

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.↗
DOE OSTI2019

Identification of Critical Surface Parameters Driving Lectin-Mediated Capture of Bacteria from Solution

Lectin-functional interfaces are useful for isolation of bacteria from solution because they are low-cost and allow nondestructive, reversible capture. This study provides a systematic investigation of physical and chemical surface parameters that influence bacteria capture over lectin-functionalized polymer interfaces and then applies these findings to construct surfaces with significantly enhanced bacteria capture. The designer block copolymer poly(glycidyl methacrylate)-block-poly(vinyldimethyl azlactone) was used as a lectin attachment layer, and lectin coupling into the polymer film through azlactone–lectin coupling reactions was first characterized. Here, experimental parameters including polymer areal chain density, lectin molecular weight, and lectin coupling buffer were systematically varied to identify parameters driving highest azlactone conversions and corresponding lectin surface densities. To introduce physical nanostructures into the attachment layer, nanopillar arrays (NPAs) of varied heights (300 and 2100 nm) were then used to provide an underlying surface template for the functional polymer layer. Capture of Escherichia coli on lectin–polymer surfaces coated over both flat and NPA surfaces was then investigated. For flat polymer interfaces, bacteria were detected on the surface after incubation at a solution concentration of 10 3 cfu/mL, and a corresponding detection limit of 1.7 × 10 3 cfu/mL was quantified. This detection limit was 1 order of magnitude lower than control lectin surfaces functionalized with standard, carbodiimide coupling chemistry. NPA surfaces containing 300 nm tall pillars further improved the detection limit to 2.1 × 10 2 cfu/mL, but also reduced the viability of captured cells. Finally, to investigate the impact of cell surface parameters on capture, we used Agrobacterium tumefaciens cells genetically modified to allow manipulation of exopolysaccharide adhesin production levels. Statistical analysis of surface capture levels revealed that lectin surface density was the primary factor driving capture, as opposed to exopolysaccharide adhesin expression. These findings emphasize the critical importance of the synthetic interface and the development of surfaces that combine high lectin densities with tailored physical features to drive high levels of capture. These insights will aid in design of biofunctional interfaces with physicochemical surface properties favorable for capture and isolation of bacteria cells from solutions.

59 BASIC BIOLOGICAL SCIENCES↗