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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Graphene as a transparent electrode for amorphous silicon-based solar cells

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-B{sub x}C:H{sub y}) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (E{sub U}), and Tauc parameter (B{sup 1/2})], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-B{sub x}C:H{sub y} thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm{sup 3}, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 10{sup 10} to 10{sup 15} Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ∼1.3 g/cm{sup 3} (or below ∼35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters E{sub U} and B{sup 1/2}, with increasing H concentration is explained by the release of strain in the network and associated decrease in structural disorder. All of these correlations in a-B{sub x}C:H{sub y} are found to be very similar to those observed in amorphous hydrogenated silicon (a-Si:H), which suggests parallels between the influence of hydrogenation on their material properties and possible avenues for optimization. Finally, an increase in electrical resistivity with increasing H at <35 at. % H concentration is explained, not by disorder as in a-Si:H, but rather by a lower rate of hopping associated with a lower density of sites, assuming a variable range hopping mechanism interpreted in the framework of percolation theory.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μ{sub opt}) and Hall (μ{sub Hall}) mobilities as a function of Sb contents and grain sizes.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10{sup −4} and 10{sup −7 }Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 10{sup 20} and 10{sup 19 }cm{sup −3}, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H{sub 2}O). The step-wise near-CBM states were observed only in the STD films deposited without O{sub 2} gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O{sub 2} flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H{sub 2}O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O{sub 2}. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O{sub 2} flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H{sub 2}O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm{sup 2}/(V s)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Fast crystallization of amorphous Gd{sub 2}Zr{sub 2}O{sub 7} induced by thermally activated electron-beam irradiation

We investigate the ionization and displacement effects of an electron-beam (e-beam) on amorphous Gd{sub 2}Zr{sub 2}O{sub 7} synthesized by the co-precipitation and calcination methods. The as-received amorphous specimens were irradiated under electron beams at different energies (80 keV, 120 keV, and 2 MeV) and then characterized by X-ray diffraction and transmission electron microscopy. A metastable fluorite phase was observed in nanocrystalline Gd{sub 2}Zr{sub 2}O{sub 7} and is proposed to arise from the relatively lower surface and interface energy compared with the pyrochlore phase. Fast crystallization could be induced by 120 keV e-beam irradiation (beam current = 0.47 mA/cm{sup 2}). The crystallization occurred on the nanoscale upon ionization irradiation at 400 °C after a dose of less than 10{sup 17} electrons/cm{sup 2}. Under e-beam irradiation, the activation energy for the grain growth process was approximately 10 kJ/mol, but the activation energy was 135 kJ/mol by calcination in a furnace. The thermally activated ionization process was considered the fast crystallization mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Light induced suppression of Kondo effect at amorphous LaAlO{sub 3}/SrTiO{sub 3} interface

We report photoelectric properties of two-dimensional electron gas (2DEG) at an amorphous LaAlO{sub 3}/SrTiO{sub 3} interface. Under visible light illumination (650 nm), an enhancement of electric conductivity is observed over the temperature range from 2 to 300 K. Particularly, a resistance upturn appearing below 25 K, which is further proved to from the Kondo effect, is suppressed by the 650 nm visible light. From the results of light-assisted Hall measurements, light irradiation increases the carrier mobility rather than carrier density in the Kondo regime. It is suggested that light induces the decoherence effect of localized spin states, hence the electron scattering is weakened and the carrier mobility is improved accordingly. Moreover, the enhancement of electrical conductivity by visible light verifies that in-gap states located in the SrTiO{sub 3} side of the interface play an important role in the electrical transport of the amorphous SrTiO{sub 3}-based oxide 2DEG system. Our results provide deeper insight into the photoinduced effects in the 2DEG system, paving the way for the design of optoelectronic devices based on oxides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Oxygen defects in amorphous Al{sub 2}O{sub 3}: A hybrid functional study

The electronic properties of the oxygen vacancy and interstitial in amorphous Al{sub 2}O{sub 3} are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al{sub 2}O{sub 3}, due to structural rearrangements which assimilate the defect structure and cause a delocalization of the associated defect levels. The imbalance of oxygen leads to a nonstoichiometric compound in which the oxygen occurs in the form of O{sup 2–} ions. Intrinsic oxygen defects are found to be unable to trap excess electrons. For low Fermi energies, the formation of peroxy linkages is found to be favored leading to the capture of holes. The relative +2/0 defect levels occur at 2.5 eV from the valence band.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Basal-plane thermal conductivity of nanocrystalline and amorphized thin germanane

Recently, we synthesized Germanane (GeH), a hydrogen-terminated layered germanium structure. We employed a four-probe thermal transport measurement method to obtain the basal-plane thermal conductivity of thin exfoliated GeH flakes and correlated the measurement results with the crystal structure. Furthermore, the obtained thermal conductivity increases with increasing temperature, suggesting that extrinsic grain boundary and defect scattering dominate intrinsic phonon-phonon scattering. Annealing a polycrystalline GeH sample at 195 C caused it to become amorphous, reducing the room-temperature thermal conductivity from 0.53± 0.03 W m -1 K -1 , which is close to the value calculated for 3.3 nm grain size, to 0.29± 0.02 W m -1 K -1 , which approaches the calculated amorphous limit in the basal plane thermal conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

In-situ functionalization of tetrahedral amorphous carbon by filtered cathodic arc deposition

Modification of surface chemistry of carbon based nanomaterials is often necessary in order to meet application specific demands. Literature provides a variety of different post-fabrication treatments, such as acid, oxidizing plasma and heat treatments. These methods offer modification of some surface properties, but their specific effects to materials surface chemistry is only vaguely reported. Thus, in order to meet the application specific demands via carbon nanomaterials surface functionalization, it is necessary to understand the effects of treatments used in detail. Here we report an in-situ method to functionalize tetrahedral amorphous carbon (ta-C) thin films by introducing high purity oxygen into the vacuum chamber during the film fabrication at the end of the deposition process, effectively changing the surface chemistry. Furthermore, we report and compare the effects of post-treatment with nitric acid and oxygen plasma to untreated and in-situ functionalized tetrahedral amorphous carbon thin films. Using x-ray absorption spectroscopy (XAS), we show that introducing oxygen during deposition decreases the sp 2 content of the surface, accompanied by an increase in carboxyl-like functionalities. Subsequent oxygen plasma further decrease the sp 2 and ketone/aldehyde content and increase the amount of carboxyl groups. Here, the same trends are observed with reference ta-C under oxygen plasma treatment. For both materials, a concentrated nitric acid treatment has only a subtle effect, which follows the same trend as the oxygen plasma treatment. Using this knowledge, we can selectively produce materials with higher functional group surface loading than has been reported earlier, paving the way for application specific material fabrication.

42 ENGINEERING↗
DOE OSTI2021

Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf 1- x Zr x O 2 thin films

The elastic moduli of amorphous and crystalline atomic layer-deposited Hf 1-x Zr x O 2 (HZO, x = 0, 0.31, 0.46, 0.79, 1) films prepared with TaN electrodes on silicon substrates were investigated using picosecond acoustic measurements. The moduli of the amorphous films were observed to increase between 211 ± 6 GPa for pure HfO 2 and 302 ± 9 GPa for pure ZrO 2 . In the crystalline films, it was found that the moduli increased upon increasing the zirconium composition from 248 ± 6 GPa for monoclinic HfO 2 to 267 ± 9 GPa for tetragonal ZrO 2 . Positive deviations from this increase were observed for the Hf 0.69 Zr 0.31 O 2 and Hf 0.54 Zr 0.46 O 2 compositions, which were measured to have moduli of 264 ± 8 GPa and 274 ± 8 GPa, respectively. These two compositions contained the largest fractions of the ferroelectric orthorhombic phase, as assessed from polarization and diffraction data. The biaxial stress states of the crystalline films were characterized through sin 2 (ψ) x-ray diffraction analysis. The in-plane stresses were all found to be tensile and observed to increase with the increasing zirconium composition, between 2.54 ± 0.6 GPa for pure HfO 2 and 5.22 ± 0.5 GPa for pure ZrO 2 . The stresses are consistent with large thermal expansion mismatches between the HZO films and silicon substrates. Furthermore, these results demonstrate a device-scale means to quantify biaxial stress for investigation on its effect on the ferroelectric properties of hafnia-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhancing elastic properties of single element amorphous solids through long-range interactions

Elastic properties of amorphous solids remain a topic of intense interest due to their important roles in a wide range of applications. Prior works have focused on short-range, local structural features, such as number density and coordination number, to elucidate the underlying mechanism of elastic moduli in glasses. Here, we report strong correlations among the spatial extension of the interatomic potential, elastic moduli, and the coherence lengths of the medium-range structural order through molecular dynamics simulations for single element glasses. Our findings demonstrate an unconventional design principle to engineer elastic properties by extending the medium-range order and provide insights into the microscopic origin of elastic properties in amorphous solids.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Modeling the aqueous interface of amorphous TiO 2 using deep potential molecular dynamics

Amorphous titanium dioxide (a-TiO 2 ) is widely used as a coating material in applications such as electrochemistry and self-cleaning surfaces where its interface with water has a central role. However, little is known about the structures of the a-TiO 2 surface and aqueous interface, particularly at the microscopic level. In this work, we construct a model of the a-TiO 2 surface via a cut-melt-and-quench procedure based on molecular dynamics simulations with deep neural network potentials (DPs) trained on density functional theory data. After interfacing the a-TiO 2 surface with water, we investigate the structure and dynamics of the resulting system using a combination of DP-based molecular dynamics (DPMD) and ab initio molecular dynamics (AIMD) simulations. Both AIMD and DPMD simulations reveal that the distribution of water on the a-TiO 2 surface lacks distinct layers normally found at the aqueous interface of crystalline TiO 2 , leading to an ~10 times faster diffusion of water at the interface. Bridging hydroxyls (Ti 2 –O b H) resulting from water dissociation decay several times more slowly than terminal hydroxyls (Ti–O w H) due to fast Ti–O w H 2 → Ti–O w H proton exchange events. These results provide a basis for a detailed understanding of the properties of a-TiO 2 in electrochemical environments. Moreover, the procedure of generating the a-TiO 2 -interface employed here is generally applicable to studying the aqueous interfaces of amorphous metal oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

Resistive switching in thin films has been widely studied in a broad range of materials. Yet, the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO x as a model material system. Specifically, we applied scanning microwave impedance microscopy and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO x despite its amorphous nature. For example, CL identifies characteristic impurity levels in TaO x , in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films' conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of <20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. Importantly, the multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mapping the structural–mechanical landscape of amorphous carbon with ReaxFF molecular dynamics

We use ReaxFF molecular dynamics (MD) to investigate the relationship between structural and mechanical properties in bulk and nanostructured amorphous carbon (a-C). The liquid-quench MD method is used to generate isotropic bulk samples with mass densities ranging from 0.96 to 3.29 g/cm3. Structural analysis identifies two types of structures with distinct short- and medium-range order: lower-density sp2-dominated a-C, which is characterized by a bimodal ring-size distribution, and higher-density sp3-dominated tetrahedral amorphous carbon (ta-C), exhibiting a unimodal ring-size distribution. Stress–strain MD simulations and analysis reveal how an atomistic structure impacts elastic properties and post-yield atomic rearrangements. All stretched structures demonstrate elastic isotropy and plasticity driven by a ring-size expansion mechanism reflected in changes in ring statistics. The plastic region is substantially larger in ta-C than in a-C due to the post-yield shift from sp3 to sp2 C dominant bonding. In both a-C and ta-C, ultimate failure occurs when a reactive crack, traversed by long sp chains, forms and propagates predominantly perpendicular to the direction of the applied strain. Oxygen infiltration into the fractured region significantly reduces stress resistance, primarily through the early rupture of long sp chains. MD simulations and analysis are extended to a-C slabs, a-C nanotubes, and partially a-C nanotubes. The latter nanostructure highlights the differences between the elastically isotropic a-C walls, which develop circumferential cracking, and the crystalline walls, which tear along crystallographic directions. These results provide a strong foundation for further computational characterization of a-C materials.

Dernov, A. (ORCID:0009000004220973)↗
DOE OSTI2017

Understanding the mechanisms of amorphous creep through molecular simulation

Significance The individual and collective molecular displacements in an amorphous solid undergoing plastic deformation are simulated by an atomistic method that allows incremental motions to be observed over a time window of fractions of seconds. Because the timescale matches well with the conditions of experimental measurements, simulation details provide dynamical evidence for the fundamental mechanisms of amorphous creep. In particular, knowledge of the interplay between diffusion (flow) and mechanical deformation processes enables us to explain the stress and temperature behavior of the experimental data as well as the validity of model descriptions of molecular mechanisms in terms of spatially and temporally heterogeneous fluctuations.

42 ENGINEERING↗