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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

The influence of a voltage ramp on the measurement of I-V characteristics of a solar cell

For efficiency and convenience the voltage applied to a Si solar cell is often fairly rapidly driven from zero to the open circuit value typically at a common rate of 1 V per millisecond. During this time the values of current are determined as a function of the instantaneous voltage thus producing an I-V characteristic. The present paper shows that the customary expressions for the current as a function of cell parameters still remain valid provided that the diffusion length in the expression for the dark current is changed from its steady state value L to the effective diffusion length L1 given by L1 = L(1 + qV/kT.tau) to the -1/2, where V is the ramp rate considered constant and tau is the lifetime of minority carriers. This result is true to a very good approximation provided that low level injection prevails.

Von Roos, O.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Silicon solar cells with high open-circuit voltage

Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

Minnucci, J. A.↗
NASA NTRS1980

Open-circuit voltage improvements in low resistivity solar cells

Improvements in the open-circuit voltage of 0.1 ohm-cm silicon solar cells have been achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behaviors of the electron mobility in the cell base limits attainment of higher voltages.

Godlewski, M. P.↗
NASA NTRS1981

Motor power factor controller with a reduced voltage starter

A power factor type motor controller is disclosed in which the conventional power factor constant voltage command signal is replaced during a starting interval with a graduated control voltage. This continuation-impart of a pending patent application (Serial No. 199, 765: Three Phase Factor Controller) provides a means for modifying the operation of the system for a motor start-up interval of 5 to 30 second. Using a ramp generators, an initial ramp-like signal replaces a constant power factor signal supplied by a potentiometer. The ramp-like signal is applied to a 15 terminal where it is summed with an operating power factor signal from phase detectors in order to obtain a control signal for ultimately controlling SCR devices. The SCR devices are turned on at an advancing rate with time responsive to the combination signal described rather than simply a function of a ramp-like signal alone.

Nola, F. J.↗
NASA NTRS1981

High voltage power transistor development

Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

Hower, P. L.↗
NASA NTRS1982

Differential charging of high-voltage spacecraft - The equilibrium potential of insulated surfaces

A theory is presented for the steady-state potential of insulated surfaces near exposed high voltages. The term 'insulated surfaces' is used to mean either dielectric surfaces or electrically isolated metallic surfaces. The potential is bounded below by the zero of the material's I-V curve assuming total suppression of secondary electrons, and above by assuming total extraction of secondaries. Within these bounds, the material's surface potential is determined consistently with the solution to Poisson's equation external to the vehicle. The theory is compared with rocket experiments and with SCATHA satellite data. Also, an explanation is suggested for the observed 'snapover' of solar cell coverslips from near plasma ground potential to near the potential of positively biased interconnects with increasing bias voltage.

Katz, I.↗
NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗
NASA NTRS1984

Pairwise Comparison of Voltage Sets

Optical preprocessor compares 16 incoming signals with reference voltages. Integrated optical substraction to take "vector difference" of two sets of analog voltages. Applications include satellite onboard processing of pictorial data so data not useful discardes; device recognizes presence of accessive cloud cover and signals hault to data transmission.

Verber, C. M.↗
NASA NTRS1982

Synchronized voltage contrast display analysis system

An apparatus and method for comparing internal voltage potentials of first and second operating electronic components such as large scale integrated circuits (LSI's) in which voltage differentials are visually identified via an appropriate display means are described. More particularly, in a first embodiment of the invention a first and second scanning electron microscope (SEM) are configured to scan a first and second operating electronic component respectively. The scan pattern of the second SEM is synchronized to that of the first SEM so that both simultaneously scan corresponding portions of the two operating electronic components. Video signals from each SEM corresponding to secondary electron signals generated as a result of a primary electron beam intersecting each operating electronic component in accordance with a predetermined scan pattern are provided to a video mixer and color encoder.

Johnston, M. F.↗
NASA NTRS1983

High voltage design guide. Volume 5: Spacecraft

This report supplies the technical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage, high-power components, equipment, and systems on spacecraft. The data in this volume is in addition to the material in Volume 4 of the final report "High Voltage Design Guide: Aircraft' which is common to the electrical insulation design for both aircraft and spacecraft equipment. The common data includes testing, tracking, partial discharges and corona. Unique material involves the semi vacuum environment, spacecraft charging, and multipactor.

W G Dunbar↗
NASA NTRS1984

A high voltage electrical power system for low Earth orbit applications

The results of testing a high voltage electrical power system (EPS) breadboard using high voltage power processing equipment developed at Marshall Space Flight Center and Ni-Cd batteries are discussed. These test results are used to extrapolate to an efficient, reliable, high capacity EPS for near term low Earth orbit, high power applications. EPS efficiencies, figures of merit, and battery reliability with a battery protection and reconditioning circuit are presented.

Lanier, J. R., Jr.↗
NASA NTRS1983

Laboratory experience with voltage breakdown

Voltage breakdown failures in photovoltaic module electrical insulations lead to loss of entire source circuits and require costly maintenance and replacement. Avoiding such catastrophes requires that modules be designed so that voltage breakdown either never occurs or occurs so rarely that it affects the least life cycle energy costs insignificantly. To achieve this desired balance of cost and reliability, the module design engineer must understand the failure mechanisms and use data on materials and failue rates to suppress or retard them. Recently obtained failure mechanism information, rate data and materials property data and a qualitative model of module failure prediction are presented.

Mon, G. R.↗
NASA NTRS1983

An improved push-pull voltage fed converter using a tapped output-filter inductor

A new concept of using a tapped output-filter inductor and an auxiliary commutating diode to reduce the likelihood of transformer core saturation in a push-pull, voltage-fed converter is presented. The linearized circuit model and transfer functions are derived with a hybrid approach using both state-space and circuit averaging. Operation of the new converter - including parasitic effects - is discussed, and a design equation for inductor tap ratio is established. It is predicted and experimentally confirmed that the new converter has more symmetrical transformer core operation, and the potential exits for lower transistor turnon current and reduced transistor voltage stress. These benefits reduce switching loss and enhance transistor reliability.

Wester, G. W.↗
NASA NTRS1982

Surface effects in high voltage silicon solar cells

The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

Meulenberg, A.↗
NASA NTRS1985

Circuit transients due to negative bias arcs on a high-voltage solar array in low Earth orbit

Arcing to negatively biased, exposed solar cell interconnects on solar arrays placed in plasma environments was established. Arcing, however, may cause damaging interference with the operation of electrical power systems in spacecraft planned to be driven with high-voltage solar arrays. An analytical model was developed to estimate the effects of netagive bias arcs on solar array power system performance. Solar cell characteristics, plasma interactions, and power system features are modeled by a linear, lumped element transient circuit, and the time domain equations are solved. Numerical results for solar array common mode and load voltage transients are calculated for typical conditions. Acceptable load transients are found for a range of arc current amplitudes and time constants.

Metz, R. N.↗
NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗