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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Magnetic and transport properties of amorphous, B 2 and L 2 1 Co 2 MnGa thin films

We have studied the magnetic and transport properties of Co 2 MnGa (CMG) thin films grown on MgO(100) substrates in terms of their chemical evolution from amorphous to ordered L 2 1 phases at the substrate temperature T s during the thin film deposition. Interestingly, the chemical order and magnetic properties sharply change depending on T s . The CMG film deposited at T s = 550 °C exhibits the L 2 1 -ordered structure and the magnetization of 3.5 μ B /f.u., while the CMG film deposited at T s = 300 °C shows a B 2-ordered structure and a relatively lower magnetization of 3 μ B /f.u., possibly due to the Mn–Mn antiferromagnetic interactions. A metallic behavior of the electrical resistivity appeared in the CMG film deposited at T s = 550 °C, whereas the semiconducting behavior appeared in the CMG films deposited at 300 °C and room temperature. Moreover, we found that the absolute value of α = d(Δ ρ )/d( T 1/2 ) in the low-temperature range below about 20 K is a measure to evaluate the degree of the chemical disorder. In a Hall effect measurement, the L 2 1 -ordered CMG film obtained at T s = 550 °C shows a sizable anomalous Hall resistivity of 15 µ Ω cm. This study unveils the relation between T s and atomic ordering, providing a new pathway for optimizing the chemical order.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Chemical substitution induced half-metallicity in CrMnSb (1– x ) P x

Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb (1–x) P x . In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ~1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb (1–x) P x , with 100% spin polarization being retained at a large range of epitaxial strain. Furthermore, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb 0.5 P 0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗
DOE OSTI2020

Spin orbit torque switching of synthetic Co/Ir/Co trilayers with perpendicular anisotropy and tunable interlayer coupling

Spin orbit torque (SOT) has attracted much attention as an energy efficient electrical method to switch the magnetization in single magnetic layer with both in-plane and perpendicular anisotropy. Here, we report SOT switching of synthetic antiferromagnetic and ferrimagnetic Co/Ir/Co trilayers, where the net magnetization and the interlayer coupling strength are highly controllable. Here, a weak external field dependence of the SOT switching was observed due to the robust domain wall structure in the trilayer. The switching current density was observed to scale inversely with the net magnetization. For trilayers with the same net magnetization, switching current is independent of the layer order because switching in the thicker Co layer dominates. In both ferromagnetic and antiferromagetic regimes, the switching current reflects the interlayer coupling strength.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A perspective on two-dimensional van der Waals opto-spin-caloritronics

Two-dimensional (2D) van der Waals magnetic semiconductors displaying controllable ferromagnetism at room temperature form atomically sharp interfaces with various substrates. Such heterostructures create platforms for understanding spin-dependent phenomena across interfaces and surfaces for high-performance technological applications. Combining these 2D magnets with light and the spin Seebeck effect (SSE) in-state-of-the-art thermo-opto-spin studies forms a new paradigm in the field of spin-caloritronics that harnesses light as the new heat. In this Perspective, we detail how to exploit recent advances in 2D van der Waals materials to boost the SSE and propose a new strategy for optically controlled SSE in 2D magnetic semiconductor-based heterostructures with the intent to establish the research thrust of “opto-spin-caloritronics.”

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

State-resolved ultrafast charge and spin dynamics in [Co/Pd] multilayers

We use transient absorption spectroscopy with circularly polarized x rays to detect laser-excited hole states below the Fermi level and compare their dynamics with that of unoccupied states above the Fermi level in ferromagnetic [Co/Pd] multilayers. While below the Fermi level, an instantaneous and significantly stronger demagnetization is observed, above the Fermi level, the demagnetization is delayed by 35 ± 10 fs. This provides a direct visualization of how ultrafast demagnetization proceeds via initial spin-flip scattering of laser-excited holes to the subsequent formation of spin waves.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

VERDI: VERsatile DIffractometer with wide-angle polarization analysis for magnetic structure studies in powders and single crystals

The VERsatile DIffractometer will set a new standard for a world-class magnetic diffractometer with versatility for both powder and single crystal samples and capability for wide-angle polarization analysis. The instrument will utilize a large single-frame bandwidth and will offer high-resolution at low momentum transfers and excellent signal-to-noise ratio. A horizontal elliptical mirror concept with interchangeable guide pieces will provide high flexibility in beam divergence to allow for a high-resolution powder mode, a high-intensity single crystal mode, and a polarized beam option. A major science focus will be quantum materials that exhibit emergent properties arising from collective effects in condensed matter. The unique use of polarized neutrons to isolate the magnetic signature will provide optimal experimental input to state-of-the-art modeling approaches to access detailed insight into local magnetic ordering.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin Seebeck effect at low temperatures in the nominally paramagnetic insulating state of vanadium dioxide

The low temperature monoclinic, insulating phase of vanadium dioxide is ordinarily considered nonmagnetic, with dimerized vanadium atoms forming spin singlets, though paramagnetic response is seen at low temperatures. Here, we find a nonlocal spin Seebeck signal in VO 2 films that appears below 30 K and that increases with a decrease in temperature. The spin Seebeck response has a nonhysteretic dependence on the in-plane external magnetic field. This paramagnetic spin Seebeck response is discussed in terms of prior findings on paramagnetic spin Seebeck effects and expected magnetic excitations of the monoclinic ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Exact constraints and appropriate norms in machine-learned exchange-correlation functionals

Machine learning techniques have received growing attention as an alternative strategy for developing general-purpose density functional approximations, augmenting the historically successful approach of human-designed functionals derived to obey mathematical constraints known for the exact exchange-correlation functional. More recently, efforts have been made to reconcile the two techniques, integrating machine learning and exact-constraint satisfaction. We continue this integrated approach, designing a deep neural network that exploits the exact constraint and appropriate norm philosophy to de-orbitalize the strongly constrained and appropriately normed (SCAN) functional. The deep neural network is trained to replicate the SCAN functional from only electron density and local derivative information, avoiding the use of the orbital-dependent kinetic energy density. The performance and transferability of the machine-learned functional are demonstrated for molecular and periodic systems.

Artificial neural networks↗
DOE OSTI2022

Atomic isotropic hyperfine properties for second row elements (Al–Cl)

Isotropic hyperfine properties have been obtained for the second row elements Al–Cl using a systematic composite approach consisting of a sequence of core/valence correlation consistent basis sets, up through aug-cc-pCV7Z, along with configuration interaction and coupled cluster methods. The best nonrelativistic final values for the atomic ground states (in MHz) are -1.80 27 Al ( 2 P o 1/2 ), -24.31 29 Si ( 3 P 0 ), 63.70 31 P ( 4 So 3/2 ), 20.77 33 S ( 3 P 2 ), and 35.42 35 Cl ( 2 P o 3/2 ). We find a large K shell contribution to the spin density at the nucleus that is almost canceled by the L and M shell contributions. The spin density in atomic units is approximately linear with respect to the atomic number.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Spin-dependent charge transmission through chiral 2T3N self-assembled monolayer on Au

In this study, a gold surface is functionalized by chemisorption of the enantiopure N,N'-bis-[2,2';5',2"]tert-thiophene-5-yl methylcyclohexane-1,2-diamine (2T3N), a chiral oligothiophene derivative, via overnight incubation in a 2T3N ethanol solution. The Au|2T3N interface is characterized by x-ray photoelectron circular dichroism and comparing x-ray photoemission spectroscopy and electro-desorption results. Charge transmission at the Au|2T3N| solution interface is characterized by recording the cyclic voltammetry of the Fe(III)/Fe(II) reversible redox couple, finding a charge transfer rate constant, k°, variation from 1 × 10 -1 to 3.3 × 10 -2 cm s -1 , when comparing the bare Au and the Au|2T3N interfaces, respectively. The “anomalous” high value of k° found for the chiral Au|2T3N interface can be rationalized on the basis of the chiral-induced spin selectivity effect, as further proved by magnetic–conductive atomic force microscopy measurements at room temperature. A spin polarization of about 30% is found.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High figure of merit spin polarized electron sources grown via MOCVD

Spin polarized photocathodes are key to the future operation of electron accelerators such as the ones at Thomas Jefferson National Accelerator Facility and Brookhaven National Laboratory. Currently, these photocathodes come in short supply due to limited production by molecular beam epitaxy. By developing a process to implement similar structures using metal organic chemical vapor deposition, the availability of these devices can be increased. Here, in this paper, we detail the implementation of recent photocathode advancements via metal organic chemical vapor deposition process and show an improvement in both polarization and quantum efficiency of our devices compared to those fabricated via molecular beam epitaxy, with devices reaching 82% polarization and 2.9% quantum efficiency.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Hybridized magnonic materials for THz frequency applications

The capability of magnons to hybridize and strongly couple with diverse excitations offers a promising avenue for realizing and controlling emergent properties that hold significant potential for applications in devices, circuits, and information processing. In this Letter, we present recent theoretical and experimental developments in magnon-based hybrid systems, focusing on the combination of magnon excitation in an antiferromagnet with other excitations, namely, plasmons in a topological insulator, phonons in a 2D antiferromagnetic (2D AFM), and photons. Here, the existence of THz frequency magnons, plasmons, and phonons makes magnon-based hybrid systems particularly appealing for high-operating-speed devices. In this context, we explore several directions to advance magnon hybrid systems, including strong coupling between a surface plasmon and magnon polariton in a topological insulator /AFM bilayer, a giant spin Nernst effect induced by magnon–phonon coupling in 2D AFMs, and control of magnon–photon coupling using spin torque.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultrafast THz emission spectroscopy of spin currents in the metamagnet FeRh

Heterostructures of ferromagnetic (FM) and noble metal (NM) thin films have recently attracted considerable interest as viable platforms for the ultrafast generation, control, and transduction of light-induced spin currents. In such systems, an ultrafast laser can generate a transient spin current in the FM layer, which is then converted to a charge current at the FM/NM interface due to strong spin–orbit coupling in the NM layer. Whether such conversion can happen in a single material and how the resulting spin current can be quantified are open questions under active study. Here, we report ultrafast THz emission from spin–charge conversion in a bare FeRh thin film without any NM layer. Our results highlight that the magnetic material by itself can enable spin–charge conversion in the same order as that in a FM/NM heterostructure. We further propose a simple model to estimate the light-induced spin current in FeRh across its metamagnetic phase transition temperature. Our findings have implications for the study of the ultrafast dynamics of magnetic order in quantum materials using THz emission spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO 2

Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO 2 and IrO 2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observation of both USHE and APHE in IrO 2 (111) films, using spin-torque ferromagnetic resonance and harmonic Hall measurements, respectively. Notably, the unconventional spin-torque efficiency from Dresselhaus spin was more than double that of a previous report. Additionally, the temperature dependence of APHE suggests that it arises from the Lorentz force, constrained by crystal symmetry. Here, symmetry analysis supports the coexistence of USHE and APHE and demonstrates that both originate from the crystal symmetry of IrO 2 (111), paving the way for a deeper understanding of Hall effects and related physical phenomena.

Crystal structure↗
DOE OSTI2025

Bridge connectivity effects on photoinduced ground-state electron spin polarization

Transient electron paramagnetic resonance (TREPR) spectroscopy has been used to probe photoinduced electron spin polarization in the recovered ground states of four radical-elaborated (CAT)Pt(bpy) donor-acceptor complexes (CAT = catechol; bpy = 4,4'-di-tert-butyl-2,2'-bipyridine). These complexes are comprised of one or two S = 1/2 nitronyl nitroxide radicals attached through different phenylethynyl bridges to the 3- or 3,6 positions of the CAT donor. In this paper, we demonstrate the effects of substitution patterns on the magnitude of the TREPR signal, thereby guiding future design principles for generating and understanding the origin of photoinduced electron spin polarization in these and related chromophores.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Magnetic compressibility of layered ferromagnet under pressure

This study systematically investigates the magnetic properties of the layered ferromagnet MnPt 5 As under pressure through a combination of experimental measurements and theoretical simulations. MnPt 5 As exhibits a ferromagnetic transition at approximately 301 K. Neutron diffraction measurements under applied pressures up to ∼4.9 GPa were performed over a temperature range from 320 to 100 K to probe its magnetic behavior. The results confirm that the Mn atoms maintain a ferromagnetic order under applied pressures, consistent with the ambient-pressure findings. However, magnetic anisotropy is notably suppressed. To further elucidate the compressibility of magnetic anisotropy in MnPt 5 As, x-ray diffraction under pressure was conducted. The results reveal that the c-axis undergoes a greater and more rapid compression compared to the ab -plane, which may contribute to the observed suppression of Mn ferromagnetic ordering along the c -axis. Additionally, theoretical calculations indicate that magnetic ordering exhibits a similar pressure-induced trend under applied pressure, supporting the experimental observations. These findings offer insights into the pressure-dependent magnetic properties and anisotropy of MnPt 5 As, with potential implications for strain engineering in Mn-based magnetic devices.

Electronic band structure↗