Interpretation of defects in field ion images - Fcc materials.
Computer shell model simulating dislocation configurations selection in field ion images of fcc structures
Hren, J. J.↗
SEARCH · Engineering Papers
Results for “material defects”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Influence of material quality and process-induced defects on semiconductor device performance and yield
An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.
Porter, W. A.↗
Quasi-Continuum Photoluminescence: Unusual Broad Spectral and Temporal Characteristics Found in Defective Surfaces of Silica and Other Materials
Abstract not provided
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Enabling Defect Detection in Low-Density Materials with X-ray Phase Contrast Imaging (XPCI).
Abstract not provided.
Dagel, Amber Lynn↗
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices (invited).
Abstract not provided.
Armstrong, Andrew.↗
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices.
Abstract not provided.
Armstrong, Andrew.↗
Quantitative multiscale microscopy of defects and deformation for application to materials modeling.
Abstract not provided.
Lim, Hojun NMN↗
Microstructure evolution in solution treated Ti15Mo alloy processed by high pressure torsion
Microstructure evolution and mechanical properties of ultra-fine grained Ti15Mo alloy processed by high pressure torsion were investigated. High pressure torsion straining resulted in strong grain refinement as-observed by transmission electron microscopy. Microhardness and light microscopy showed two distinct regions — (i) a central region with radial material flow and low microhardness (340 HV) and (ii) a peripheral region with rotational material flow and high microhardness (430 HV). Positron annihilation spectroscopy showed that the only detectable defects in the material are dislocations, whose density increases with the radial distance and the number of high pressure torsion revolutions. The local chemical environment around defects does not differ significantly from the average composition. - Highlights: • Beta-Ti alloy Ti15Mo was processed by high pressure torsion (HPT). • Lateral inhomogeneity of the microstructure and microhardness was found. • Dislocations are the only lattice defects detectable by positron annihilation. • Molybdenum is not preferentially segregated along dislocation cores.
36 MATERIALS SCIENCE↗
Digital Image Correlation Strain Field Analysis of Materials for Target Systems
Many accelerator facilities are currently being limited in beam power by their target facilities. When exposed to high-energy proton beams, target systems experience radiation damage, mechanical stress, and extreme temperatures, altering their physical properties.For example, due to defects induced in materials by high-energy protons, the physical properties of materials will change during irradiation. Conducting PIEs (Post Irradiation Examinations) can help us understand how the materials can change.Analyzing the strain field across an irradiated sample can help identify where defects have been created, how the hardness of materials have changed, and where they will experience failure.
Ayyildiz, Onat↗
Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis
Temperature‐ and injection‐dependent lifetime spectroscopy (TIDLS) is extensively used for the characterization of defects in silicon material for photovoltaic applications. By coupling TIDLS measurements with Shockley–Read–Hall recombination models, the most important defects’ parameters can be assessed including the defect energy level E t and the capture cross section ratio k . However, while proving extremely helpful in a variety of studies aiming at the characterization of contaminated silicon, a generalized approach for the analysis of industrially‐relevant material has not yet emerged. In this contribution, we examine in detail the recently introduced defect parameters contour mapping (DPCM) methodology for TIDLS data analysis as a tool for direct visualization of possible lifetime limiting defects. Herein, we showcase the DPCM method's potential by applying it to two representative case studies selected from literature and we demonstrate that, even when data are scarce, invaluable information is obtained in an easy and intuitive way without any a priori assumption needed. We then apply the DPCM method to simulated TIDLS data to evaluate the general characteristics of its response and the optimal conditions for its application. This analysis proves that the temperature dependence of lifetime is the most critical information required toward a really univocal identification of metal impurities.
Bernardini, Simone↗
Defect-induced electronic smectic state at the surface of nematic materials
Due to the intertwining between electronic nematic and elastic degrees of freedom, lattice defects and structural inhomogeneities commonly found in crystals can have a significant impact on the electronic properties of nematic materials. Here, we show that defects commonly present at the surface of crystals generally shift the wave-vector of the nematic instability to a non-zero value, resulting in an incommensurate electronic smectic phase. Such a smectic state onsets above the bulk nematic transition temperature and is localized near the surface of the sample. We argue that this effect may explain not only recent observations of a modulated nematic phase in iron-based superconductors, but also several previous puzzling experiments that reported signatures consistent with nematic order before the onset of a bulk structural distortion.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Understanding and reducing deleterious defects in the metastable alloy GaAsBi
Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods, we investigate the defect thermodynamics and phase segregation in the technologically important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with those from numerous previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects that degrade the electronic and optical performances are predicted to be As Ga , Bi Ga , As Ga +Bi As , Bi Ga +Bi As , V Ga and V Ga +Bi As , of which the first four and last two defects are minority-electron and minority-hole traps, respectively. V Ga is also observed to have a critical role in controlling metastable Bi supersaturation by mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from an As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. In conclusion, we expect this work to aid in the applications of GaAsBi for novel electronic and optoelectronic devices and to illuminate the control of deleterious defects in other metastable materials.
36 MATERIALS SCIENCE↗
Large-area inspection of defects in metal plates using multi-mode guided acoustic waves and sparse sensor networks
Not Available
36 MATERIALS SCIENCE↗
Stress-dominated growth of two-dimensional materials on nonplanar substrates
Curved features are ubiquitous on solid surfaces, but the effect of surface curvatures on growth of two-dimensional (2D) materials has not yet been established. Using a newly developed method based on the Metropolis algorithm and taking graphene as a prototype, we find that a curved feature on substrates can result in a variety of topological defects in 2D materials. As the feature's size increases by just nanometers, the defects can vary from adatoms, dislocation pairs, and grain boundary scars to long-range grain boundaries, in contrast to previously reported defect-free modes of rigid colloidal crystals growing on spheres. We identify an important role of curvature-induced lattice stress in lowering the growth rate over the curved features and driving a plastic instability in the materials. When the feature's size increases to several nanometers, the stress effect is compromised by an enhanced effect of geodesic curvature, yielding long-range grain boundaries as a result of increased local growth rate on the feature with respect to that on flat regions. Here we further provide a ‘phase diagram’ of defects that helps to guide a rational choice of geometrical parameters of features towards the growth of high-quality 2D materials as well as controllable creation of topological defects.
36 MATERIALS SCIENCE↗
Nondestructive Superresolution Imaging of Defects and Nonuniformities in Metals, Semiconductors, Dielectrics, Composites, and Plants Using Evanescent Microwaves
We have imaged and mapped material nonuniformities and defects using microwaves generated at the end of a microstripline resonator with 0.4 micrometer lateral spatial resolution at 1 GHz. Here we experimentally examine the effect of microstripline substrate permittivity, the feedline-to-resonator coupling strength, and probe tip geometry on the spatial resolution of the probe. Carbon composites, dielectrics, semiconductors, metals, and botanical samples were scanned for defects, residual stresses, subsurface features, areas of different film thickness, and moisture content. The resulting evanescent microwave probe (EMP) images are discussed. The main objective of this work is to demonstrate the overall capabilities of the EMP imaging technique as well as to discuss various probe parameters that can be used to design EMPs for different applications.
Tabib-Azar, M.↗
Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.
Natesh, R.↗
A Micro-scale Numerical Investigation of Internal and Interfacial Void Defects in Adhesive on Failure Behavior of Adhesively-Bonded Materials with Rough Surfaces
This paper studied the effects of air void defects on the failure behavior of adhesively-bonded materials under global shear via micro-scale computational modeling. The numerical results indicated that interfacial void defects can largely facilitate interfacial debonding of a weaker adherend/adhesive interface under shear. However, this is not the case for a stronger adherend/adhesive interface, showing the reduction on the nominal shear strength of an adhesive joint is mainly due to internal void defects. The reduced bonding performance due to voids can be improved by leveraging an appropriate surface roughness. This preliminary investigation is a first step to better understand the micro-mechanics of interfacial failure in the adhesion of a roughened/patterned adherend via surface modification(s) and an adhesive, and also shows the importance of minimizing interfacial void defects in particular at a weaker adherend/adhesive interface via different techniques.
Qiao, Yao↗
Vacancies in graphene: an application of adiabatic quantum optimization
Quantum annealers have grown in complexity to the point that quantum computations involving a few thousand qubits are now possible. In this paper, with the intentions to show the feasibility of quantum annealing to tackle problems of physical relevance, we used a simple model, compatible with the capability of current quantum annealers, to study the relative stability of graphene vacancy defects. By mapping the crucial interactions that dominate carbon-vacancy interchange onto a quadratic unconstrained binary optimization problem, our approach exploits the ground state as well as the excited states found by the quantum annealer to extract all the possible arrangements of multiple defects on the graphene sheet together with their relative formation energies. Furthermore, this approach reproduces known results and provides a stepping stone towards applications of quantum annealing to problems of physical–chemical interest.
36 MATERIALS SCIENCE↗