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At least 937 records · Page 52

All sources NASA NTRS DOE OSTI

NASA NTRS2009

NASA Tech Briefs, December 2009

Topics include: A Deep Space Network Portable Radio Science Receiver; Detecting Phase Boundaries in Hard-Sphere Suspensions; Low-Complexity Lossless and Near-Lossless Data Compression Technique for Multispectral Imagery; Very-Long-Distance Remote Hearing and Vibrometry; Using GPS to Detect Imminent Tsunamis; Stream Flow Prediction by Remote Sensing and Genetic Programming; Pilotless Frame Synchronization Using LDPC Code Constraints; Radiometer on a Chip; Measuring Luminescence Lifetime With Help of a DSP; Modulation Based on Probability Density Functions; Ku Telemetry Modulator for Suborbital Vehicles; Photonic Links for High-Performance Arraying of Antennas; Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration; Hardware-Efficient Monitoring of I/O Signals; Video System for Viewing From a Remote or Windowless Cockpit; Spacesuit Data Display and Management System; IEEE 1394 Hub With Fault Containment; Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph; Waveguide Transition for Submillimeter-Wave MMICs; Magnetic-Field-Tunable Superconducting Rectifier; Bonded Invar Clip Removal Using Foil Heaters; Fabricating Radial Groove Gratings Using Projection Photolithography; Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates; Method for Measuring the Volume-Scattering Function of Water; Method of Heating a Foam-Based Catalyst Bed; Small Deflection Energy Analyzer for Energy and Angular Distributions; Polymeric Bladder for Storing Liquid Oxygen; Pyrotechnic Simulator/Stray-Voltage Detector; Inventions Utilizing Microfluidics and Colloidal Particles; RuO2 Thermometer for Ultra-Low Temperatures; Ultra-Compact, High-Resolution LADAR System for 3D Imaging; Dual-Channel Multi-Purpose Telescope; Objective Lens Optimized for Wavefront Delivery, Pupil Imaging, and Pupil Ghosting; CMOS Camera Array With Onboard Memory; Quickly Approximating the Distance Between Two Objects; Processing Images of Craters for Spacecraft Navigation; Adaptive Morphological Feature-Based Object Classifier for a Color Imaging System; Rover Slip Validation and Prediction Algorithm; Safety and Quality Training Simulator; Supply-Chain Optimization Template; Algorithm for Computing Particle/Surface Interactions; Cryogenic Pupil Alignment Test Architecture for Aberrated Pupil Images; and Thermal Transport Model for Heat Sink Design.

Source record↗

DOE OSTI2020

OpenACC unified programming environment for GPU and FPGA multi-hybrid acceleration

Attached accelerators have been frequently used in recent High Per- formance Computing (HPC) systems because of their high performance/power ratio. In particular, the Graphics Processing Unit (GPU) is the most popu- lar accelerator owing to its high peak FLOPS performance and high memory bandwidth supported by HBM2, etc. However, the performance of GPU depends highly on a large degree of SIMD parallelism and has difficulty sustaining a high performance on programs with frequent branch operations or a partially low degree of parallelism.By contrast, a Field Programmable Gate Array (FPGA) has received attention as a different type of accelerator than GPU as a fully reconfigurable processor fitting the target applications. The high performance of FPGA is mainly provided by a pipelined operation and optimized circuit suitable for any operation even with frequent conditional branches. We have been focusing on the flexibility of FPGA to compensate for the weakness of GPU. We believe that the coupling of GPU with FPGA can result in one of the most powerful accelerating platforms available.However, the program coding of GPU and FPGA coupling can be quite difficult for application users. Traditionally, CUDA by NVIDIA has been the most popular programming language with the largest share of GPUs used in HPC, whereas a hardware description language such as Verilog HDL has been used in FPGA programming. OpenCL coding has recently become available even on high-end FPGAs. Moreover, several recent studies have also enabled the OpenACC coding for use in FPGA. In this study, we provide a unified programming system based on OpenACC for a platform equipped with both GPU and FPGA aiming at the next-generation accelerated supercomputer framework. Our programming environment is called Multi-Hybrid OpenACC Translator (MHOAT), and in this paper, we describe the basic concept and prototype system of MHOAT based on an evaluation on the amount of coding required and the performance of a hybrid multi-device accelerated system.

Tsunashima, Ryuta↗

DOE OSTI2020

CSM, 50 Years Anniversary: Retrospective - 20118

The Centre de Stockage de la Manche (CSM), in La Hague (France) was in 1969 the first radioactive waste disposal facility built and operated in France for Low and Intermediate level waste (LILW). Each chapter of the paper exposes the main achievements of a decade of the CSM history, from the decision to dispose radioactive waste on surface to the preservation of the memory of the site. Through the history of the CSM, it is the evolution of waste management that unfolds over 50 years, shedding light on the choices we make today and the issues of tomorrow. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2021

Particle track classification using quantum associative memory

Pattern recognition algorithms are commonly employed to simplify the challenging and necessary step of track reconstruction in sub-atomic physics experiments. Aiding in the discrimination of relevant interactions, pattern recognition seeks to accelerate track reconstruction by isolating signals of interest. In high collision rate experiments, such algorithms can be particularly crucial for determining whether to retain or discard information from a given interaction even before the data is transferred to tape. As data rates, detector resolution, noise, and inefficiencies increase, pattern recognition becomes more computationally challenging, motivating the development of higher efficiency algorithms and techniques. Quantum associative memory is an approach that seeks to exploits quantum mechanical phenomena to gain advantage in learning capacity, or the number of patterns that can be stored and accurately recalled. Here, we study quantum associative memory based on quantum annealing and apply it to the particle track classification. We focus on discrimination models based on Ising formulations of quantum associative memory model (QAMM) recall and quantum content-addressable memory (QCAM) recall. We characterize classification performance of these approaches as a function detector resolution, pattern library size, and detector inefficiencies, using the D-Wave 2000Q processor as a testbed. Discrimination criteria is set using both solution-state energy and classification labels embedded in solution states. We find that energy-based QAMM classification performs well in regimes of small pattern density and low detector inefficiency. In contrast, state-based QCAM achieves reasonably high accuracy recall for large pattern density and the greatest recall accuracy robustness to a variety of detector noise sources.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗

NASA NTRS2005

Initial Kernel Timing Using a Simple PIM Performance Model

This presentation will describe some initial results of paper-and-pencil studies of 4 or 5 application kernels applied to a processor-in-memory (PIM) system roughly similar to the Cascade Lightweight Processor (LWP). The application kernels are: * Linked list traversal * Sun of leaf nodes on a tree * Bitonic sort * Vector sum * Gaussian elimination The intent of this work is to guide and validate work on the Cascade project in the areas of compilers, simulators, and languages. We will first discuss the generic PIM structure. Then, we will explain the concepts needed to program a parallel PIM system (locality, threads, parcels). Next, we will present a simple PIM performance model that will be used in the remainder of the presentation. For each kernel, we will then present a set of codes, including codes for a single PIM node, and codes for multiple PIM nodes that move data to threads and move threads to data. These codes are written at a fairly low level, between assembly and C, but much closer to C than to assembly. For each code, we will present some hand-drafted timing forecasts, based on the simple PIM performance model. Finally, we will conclude by discussing what we have learned from this work, including what programming styles seem to work best, from the point-of-view of both expressiveness and performance.

BRIEFING CHARTS↗

DOE OSTI2020

A phase-field model for non-isothermal phase transformation and plasticity in polycrystalline yttria-stabilized tetragonal zirconia

Here we propose an elastoplastic phase-field (PF) model to investigate the mechanics of tetragonal-to-monoclinic phase transformation (TMPT) and elastoplastic deformation of polycrystalline yttria-stabilized tetragonal zirconia (YSTZ). A Landau polynomial with non-vanishing chemical energy at the equilibrium temperature is introduced to account for the actual formation energies of the phases. The effects of different grain orientations, latent heat, and temperature on TMPT and deformation mechanisms are considered. The suppressive transformation effects of the grain boundaries (GBs) is modeled using an inhomogeneous kinetic coefficient in the bulk and GBs. The simulation results for single crystals demonstrate the capability of the model to reproduce the orientation-dependent compressive deformation of YSTZ similar to atomistic simulations and micropillar experiments. The single crystal with [100] crystallographic orientation along the loading direction (SC[100]) displays both TMPT and plasticity, SC[101] experiences only phase transformation, while SC[001] undergoes only plastic yielding. The TMPT induced by compressive loading exhibits shape memory effect (SME) below the equilibrium transformation temperature and pseudoelasticity above it, while the critical transformation stress increases with increasing loading temperature. The irrecoverable plastic strain is found to trap a part of the monoclinic phase, which prevents a complete reverse transformation. The polycrystalline cases also display SME and PE at low and high temperatures, respectively. Due to the orientation differences between grains and the stress concentrations at geometric nonlinearities, plastic deformation occurs in polycrystalline YSTZ for an applied load less than the yield stress. The results suggest a possible limitation of plasticity and an improvement of the shape recovery of YSTZ if one can control the orientation of the grains and/or increase the density of stacking faults at the GBs during material processing.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

We report topologically protected polar textures have provided a rich playground for the exploration of novel, emergent phenomena. Recent discoveries indicate that ferroelectric vortices and skyrmions not only host properties markedly different from traditional ferroelectrics, but also that these properties can be harnessed for unique memory devices. Using a combination of capacitor-based capacitance measurements and computational models, it is demonstrated that polar vortices in dielectric–ferroelectric–dielectric trilayers exhibit classical ferroelectric bi-stability together with the existence of low-field metastable polarization states. This behavior is directly tied to the in-plane vortex ordering, and it is shown that it can be used as a new method of non-destructive readout-out of the poled state.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Transfer of Millimeter‐Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement

The demonstration of epitaxial thin film transfer has enormous potential for thin film devices free from the traditional substrate epitaxy limitations. However, large-area continuous film transfer remains a challenge for the commonly reported polymer-based transfer methods due to bending and cracking during transfer, especially for highly strained epitaxial thin films. In this work, a new epoxy-based, rigid transfer method is used to transfer films from an SrTiO 3 (STO) growth substrate onto various new substrates, including those that will typically pose significant problems for epitaxy. An epitaxial multiferroic Bi 3 Fe 2 Mn 2 O x (BFMO) layered supercell (LSC) material is selected as the thin film for this demonstration. The results of surface and structure studies show an order of magnitude increase in the continuous area of transferred films when compared to previous transfer methods. The magnetic properties of the BFMO LSC films are shown to be enhanced by the release of strain in this method, and ferromagnetic resonance is found with an exceptionally low Gilbert damping coefficient. The large-area transfer of this highly strained complex oxide BFMO thin film presents enormous potential for the integration of many other multifunctional oxides onto new substrates for future magnetic sensors and memory devices.

bismuth oxides↗

DOE OSTI2021

A Binomial Stochastic Framework for Efficiently Modeling Discrete Statistics of Convective Populations

Abstract Understanding the coupling between convective clouds and the general circulation, as well as addressing the gray zone problem in convective parameterization, requires insight into the genesis and maintenance of spatial patterns in cumulus cloud populations. In this study, a simple toy model for recreating populations of interacting convective objects as distributed over a two‐dimensional Eulerian grid is formulated to this purpose. Key elements at the foundation of the model include i) a fully discrete formulation for capturing discrete behavior in convective properties at small population sample sizes, ii) object age‐dependence for representing life‐cycle effects, and iii) a prognostic number budget allowing for object interactions and co‐existence of multiple species. A primary goal is to optimize the computational efficiency of this system. To this purpose the object birth rate is represented stochastically through a spatially aware Bernoulli process. The same binomial stochastic operator is applied to horizontal advection of objects, conserving discreteness in object number. The applicability to atmospheric convection as well as behavior implied by the formulation is assessed. Various simple applications of the BiOMi model (Binomial Objects on Microgrids) are explored, suggesting that important convective behavior can be captured at low computational cost. This includes i) subsampling effects and associated powerlaw scaling in the convective gray zone, ii) stochastic predator‐prey behavior, iii) the downscale turbulent energy cascade, and iv) simple forms of spatial organization and convective memory. Consequences and opportunities for convective parameterization in next‐generation weather and climate models are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Reconfigurable training and reservoir computing in an artificial spin-vortex ice via spin-wave fingerprinting

Strongly interacting artificial spin systems are moving beyond mimicking naturally occurring materials to emerge as versatile functional platforms, from reconfigurable magnonics to neuromorphic computing. Typically, artificial spin systems comprise nanomagnets with a single magnetization texture: collinear macrospins or chiral vortices. Here, by tuning nanoarray dimensions we have achieved macrospin–vortex bistability and demonstrated a four-state metamaterial spin system, the ‘artificial spin-vortex ice’ (ASVI). ASVI can host Ising-like macrospins with strong ice-like vertex interactions and weakly coupled vortices with low stray dipolar field. Vortices and macrospins exhibit starkly differing spin-wave spectra with analogue mode amplitude control and mode frequency shifts of Δf = 3.8 GHz. The enhanced bitextural microstate space gives rise to emergent physical memory phenomena, with ratchet-like vortex injection and history-dependent non-linear fading memory when driven through global magnetic field cycles. We employed spin-wave microstate fingerprinting for rapid, scalable readout of vortex and macrospin populations, and leveraged this for spin-wave reservoir computation. ASVI performs non-linear mapping transformations of diverse input and target signals in addition to chaotic time-series forecasting.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2016

On the mechanisms of cation injection in conducting bridge memories: The case of HfO{sub 2} in contact with noble metal anodes (Au, Cu, Ag)

Resistance switching is studied in HfO{sub 2} as a function of the anode metal (Au, Cu, and Ag) in view of its application to resistive memories (resistive random access memories, RRAM). Current-voltage (I-V) and current-time (I-t) characteristics are presented. For Au anodes, resistance transition is controlled by oxygen vacancies (oxygen-based resistive random access memory, OxRRAM). For Ag anodes, resistance switching is governed by cation injection (Conducting Bridge random access memory, CBRAM). Cu anodes lead to an intermediate case. I-t experiments are shown to be a valuable tool to distinguish between OxRRAM and CBRAM behaviors. A model is proposed to explain the high-to-low resistance transition in CBRAMs. The model is based on the theory of low-temperature oxidation of metals (Cabrera-Mott theory). Upon electron injection, oxygen vacancies and oxygen ions are generated in the oxide. Oxygen ions are drifted to the anode, and an interfacial oxide is formed at the HfO{sub 2}/anode interface. If oxygen ion mobility is low in the interfacial oxide, a negative space charge builds-up at the HfO{sub 2}/oxide interface. This negative space charge is the source of a strong electric field across the interfacial oxide thickness, which pulls out cations from the anode (CBRAM case). Inversely, if oxygen ions migration through the interfacial oxide is important (or if the anode does not oxidize such as Au), bulk oxygen vacancies govern resistance transition (OxRRAM case).

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2019

Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2017

Managing the Performance/Error Tradeoff of Floating-point Intensive Applications

Modern embedded systems are becoming more reliant on real-valued arithmetic as they employ mathematically complex vision algorithms and sensor signal processing. Double-precision floating point is the most commonly used precision in computer vision algorithm implementations. A single-precision floating point can provide a performance boost due to less memory transfers, less cache occupancy, and relatively faster mathematical operations on some architectures. However, adopting it can result in loss of accuracy. Identifying which parts of the program can run in single-precision floating point with low impact on error is a manual and tedious process. In this paper, we propose an automatic approach to identify parts of the program that have a low impact on error using shadow-value analysis. Our approach provides the user with a performance/error tradeoff, using which the user can decide how much accuracy can be sacrificed in return for performance improvement. We illustrate the impact of the approach using a well known implementation of Apriltag detection used in robotics vision. In conclusion, we demonstrate that an average 1.3x speedup can be achieved with no impact on tag detection, and a 1.7x speedup with only 4% false negatives.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2022

Design of functional materials based on new principles of disorder. Final Report

Disorder is present to some extent in every material. The disorder can be sparse and localized – individual defects – or globally such as in a glass. Normally disorder is considered to be detrimental to function. However, this is not necessarily always the case. This project addressed the question: How does disorder provide new potentialities for the behavior of a material that would be absent in a crystalline material of the same composition? We have discovered a new principle for disordered matter: Independence of bond-level response. This work has introduced the possibility of creating new classes of mechanical meta-materials with applications everywhere from microscopic biological molecules (allostery) to large scale architectural disordered networks. During the course of this grant, we have subsequently elaborated on these novel ideas about bond-level independence of properties in disordered materials. In particular, this study has required that we understand the limits of disorder. That is, if crystals are perfect order, is there another diametrically opposed pole which is the most disordered state? We have shown that, in a well-defined way, jamming is one extreme disordered pole of rigid matter. Jamming is a far-from-equilibrium way of creating a rigid solid by rapidly quenching a random distribution of particles to a mechanically stable system at zero temperature. To understand the jammed state of matter, we have elucidated the low-frequency excitation of these systems. This has allowed a new way of understanding materials that cannot be easily classified as crystals or glasses. These ideas can be extended to address the mechanical properties of polycrystalline matter. Memory formation in matter can take inspiration from memory that occurs in a biological context. The issue of memory formation raises another set of questions at the heart of how the energy landscape is organized and how it can be manipulated to store information in a solid. This project has explored how to understand the degree to which multiple memories can be stored in a single system and has created a holistic understanding of how inputs can be used to create a desired response.

36 MATERIALS SCIENCE↗

NASA NTRS1975

Integrating TV/digital data spectrograph system

A 25-mm vidicon camera was previously modified to allow operation in an integration mode for low-light-level astronomical work. The camera was then mated to a low-dispersion spectrograph for obtaining spectral information in the 400 to 750 nm range. A high speed digital video image system was utilized to digitize the analog video signal, place the information directly into computer-type memory, and record data on digital magnetic tape for permanent storage and subsequent analysis.

Duncan, B. J.↗