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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Design and biocompatibility of endovascular aneurysm filling devices

We report that the rupture of an intracranial aneurysm, which can result in severe mental disabilities or death, affects approximately 30,000 people in the United States annually. The traditional surgical method of treating these arterial malformations involves a full craniotomy procedure, wherein a clip is placed around the aneurysm neck. In recent decades, research and device development have focused on new endovascular treatment methods to occlude the aneurysm void space. These methods, some of which are currently in clinical use, utilize metal, polymeric, or hybrid devices delivered via catheter to the aneurysm site. In this review, we present several such devices, including those that have been approved for clinical use, and some that are currently in development. We present several design requirements for a successful aneurysm filling device and discuss the success or failure of current and past technologies. Lastly, we also present novel polymeric based aneurysm filling methods that are currently being tested in animal models that could result in superior healing.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

A programmable shared-memory system for an array of processing-in-memory devices

Processing in memory (PIM), the concept of integrating processing directly with memory has been attracting a lot of attention, since PIM can assist in overcoming the throughput limitation caused by data movement between CPU and memory. The challenge, however, is that it requires the programmers to have a deep understanding of the PIM architecture to maximize the benefits such as data locality and parallel thread execution on multiple PIM devices. In this study, we present AnalyzeThat, a programmable shared-memory system for parallel data processing with PIM devices. Thematic to AnalyzeThat is a rich PIM-aware data structure (PADS), which is an encapsulation that integrally ties together the data, the analysis tasks and the runtime needed to interface with the PIM device array. The PADS abstraction provides (i) a sophisticated key-value data container that allows programmers to easily store data on multiple PIMs, (ii) a suite of parallel operations with which users can easily implement data analysis applications, and (iii) a runtime, hidden to programmers, which provides the mechanisms needed to overlay both the data and the tasks on the PIM device array in an intelligent fashion, based on PIM-specific information collected from the hardware. We have developed a PIM emulation framework called AnalyzeThat. In conclusion, our experimental evaluation with representative data analytics applications suggests that the proposed system can significantly reduce the PIM programming effort without losing its technology benefits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.

42 ENGINEERING↗
DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗
DOE OSTI2023

Photovoltaic device innovation for a solar future

Photovoltaics (PV), also known as solar cells, are now found everywhere - in utility plants; on roofs of homes and commercial buildings; on platforms at sea; in agricultural fields; on vehicles, buildings, drones, and backpacks; and, in their longest running application, providing power in space. Continuous device innovation has led to increased efficiency and improved reliability for multiple PV technologies. Confronted with an urgent need to deploy PV at multiterawatt (TW) scale over the next two decades to mitigate greenhouse gas emissions, PV device innovation takes on new urgency and impact. This perspective reviews recent progress in device design and performance for PV technologies that are currently in commercial production at greater than 1 GW/year or enabling significant space-based power generation - Si, CdTe, CIGS, and multijunction III-V - and looks ahead to the next 5 years. In conclusion, we also identify device-related topics requiring cross-cutting research and innovation.

14 SOLAR ENERGY↗
DOE OSTI2019

Modeling the impact of GIC neutral blocking devices on distance protection relay operations for transmission lines

Geomagnetic Induced Current (GIC) blocking devices typically include a capacitor on the neutral grounding path of wye-configured transformers. This type of GIC blocking device was designed as an effective countermeasure to prevent possible damages caused on the power grid by geomagnetic storms, and by the slow-varying component of a high-altitude electromagnetic pulse (HEMP). The insertion of a capacitor in the transformer neutral impedes the establishment of GICs in lines terminated with wye-connected transformer windings. With the presence of a capacitively grounded neutral, however, it becomes important to evaluate that no adverse effects are introduced in the general grid operations. In this context, this study investigates the impact of GIC neutral blocking devices on the functionality of distance protection relays for different values of transformer neutral blocking capacitors, and at different transmission line voltages. This study was conducted with a real-time simulation platform, and the simulations were performed by introducing a phase-to-ground fault at different line locations, and by measuring the apparent impedance at the protection relay location. Finally, the results indicated that, for typical values of capacitance considered for GIC neutral blocking devices, the distance protection relay model operates properly, without requiring a modification of the relay settings.

42 ENGINEERING↗
DOE OSTI2022

Exploring the benefits of utilizing small modular device for sustainable and flexible shale gas water management

Growing shale gas extraction in recent years has triggered wide discussions on the associated freshwater requirement and wastewater management. Many optimization approaches have been developed for shale gas water management; however, most of the studies assumed permanent utilization of wastewater treatment facilities with fixed capacities. Considering the rapidly declining characteristics of shale gas wastewater production, these treatment facilities could remain largely underutilized after the first few months/years of production, making them less economically attractive. To maximize the capacity utilization of treatment facilities and further improve the economic performance of shale gas development, this study develops a systematic optimization framework, where the capacity strategy of conventional treatment facilities and utilization of the recent concept of modular manufacturing are both considered for flexible shale gas water management. The proposed mixed-integer linear programming (MILP) model simultaneously optimizes the design and planning of integrated shale gas and water supply chain, with a focus on capacity planning for both large-scale conventional treatment facilities and small-scale modular devices. A series of Marcellus-based case studies are performed to illustrate the applicability of the proposed model and provide general insights into the trade-offs between the multiple types of treatment facilities. The optimization results reveal that the combinatorial utilization of conventional facilities and modular devices for wastewater treatment (66% by conventional facilities and 34% by modular devices) brings 9.3% more reused water for other well development and 6.2% savings in water-related costs, compared to flexible management of only conventional facilities. Furthermore, this work suggests that taking modular device as auxiliary equipment for shale gas water management is most beneficial to increase the capacity utilization of treatment facilities and achieve a more economic and sustainable shale gas production system.

04 OIL SHALES AND TAR SANDS↗
DOE OSTI2025

Forced flow transient safety analysis of irradiation device with adjustable orifice for research reactor fuel assemblies

The Belgium Reactor 2 (BR2) of the Belgian Nuclear Research Centre (SCK CEN) has several irradiation devices or rigs that are dedicated to the fuel performance and qualification demonstration testing of research reactor fuels. In support of the U.S. High Performance Research Reactor (USHPRR) LEU conversion project, a new flexible irradiation apparatus, MUSTANG-R, has been constructed. SCK CEN has completed the design and safety study, in cooperation with Idaho National Laboratory (INL) and Argonne National Laboratory (ANL), to allow for the irradiation testing of a full-size fuel assembly in a 200 mm diameter channel in the BR2 reactor. The moveable valve is a key design feature of the device and acts like an adjustable orifice enhancing or restricting the flow through a coolant channel inlet located in the BR2 upper plenum. This moveable valve allows the flow through the device to be adjusted prior to each BR2 cycle to obtain the necessary conditions for the fuel qualification test. This ensures accurate and representative thermal-hydraulic conditions of the fuel design are achieved. The device was designed and qualified as passively safe, implying verification by a combination of mechanical and thermal-hydraulic analysis and testing. This includes characterization of the safety margin required for a scenario where the moveable valve is assumed to be erroneously closed during irradiation. A simplified and conservative method is proposed for analyzing the corresponding forced flow transient using a critical heat flux criterion. In conclusion, this allows the required minimum valve opening to be determined for the experiments' design and safety studies.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Gamma, electron beam and X-ray irradiation effects on polymers in an advanced bone cement mixer device

The medical device industry has been investigating ways to increase the use of alternatives to cobalt-60 gamma radiation and ethylene-oxide gas sterilization, such as electron beam (E-beam) and X-ray radiation, due to regulatory and market pressures. One impediment to switching to E-beam or X-ray technology for sterilization is the lack of data on the effects of these radiation sources on medical device polymers. To provide such data this work considers irradiation and testing of a common single-use medical bone cement mixing system, the Stryker Advanced Cement Mixer (ACM®), that is composed of seven polymer materials. The ACM® devices considered here were processed to sterilization-relevant doses (15, 25, 50, and 70 kGy) using three radiation technologies: gamma, E-beam, and X-ray. The system and its polymer components were tested for product functionality, as well as mechanical and visual properties to determine how exposure effects may be influenced by radiation technology and dose level. We found that although there were instances of statistically significant differences in effects between the gamma-irradiated products and those irradiated with E-beam and X-ray, those effects were negligible in terms of retained functionality of the product and retained mechanical properties of the polymer components. Overall, results of this study demonstrate that, for of the effects studied, E-beam and X-ray are viable alternatives to cobalt-60 gamma radiation for sterilization of the polymer-based device investigated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

The global energy footprint of information and communication technology electronics in connected Internet-of-Things devices

Information and communication technology (ICT) has been critical to the emergence of a new Internet-of-Things (IoT) era, as a rapidly increasing number and variety of IoT electronic devices in a wide range of end-use sectors require massive data communication in terms of volume, velocity/speed, and variety. Additionally, semiconductor technology advancements have played a key role in ICT and unlike the past ICT energy footprint analysis, which focused on the final electronic product, an attempt has been made to examine the global energy impacts for the period 2016–2025 based on the market forecasts of three major IoT IC types, i.e., sensors and actuators, connectivity, and processor ICs distributed among four major IoT device components.Total global IoT semiconductor primary energy demand is projected to increase from 2 EJ in 2016 to 35 EJ by 2025, resulting mainly from a substantial projected increase energy needed in the manufacturing of ICs, with growth in the use of sensors and energy-intensive next fab generation manufacturing. Unlike the trend in manufacturing energy, total global operational energy use is projected to decrease significantly with the development of smaller transistor size, low-power devices, and faster wireless data communication technology. Total operational energy is projected to significantly decrease from 118 TWh/year (1,2 EJ/year) to less than 1 TWh/year (0.003 EJ/year) in spite of a significantly higher anticipated growth in its market size during the 2016–2025 forecast period. Its annual share of total primary energy use is projected to reach an insignificant level of 0.01% by the end of 2025, consistent with the past limited electronic product life cycle analyses besides the analysis focus here limited to ICs in IoT devices.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Optimization of the electron transport layer in quantum dot light-emitting devices

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices.

42 ENGINEERING↗
DOE OSTI2012

Statistical characterization of the reproducibility of neutron emission of small plasma focus devices

The purpose of this work is to discuss the techniques related to the detection of fast pulsed neutrons produced in plasma focus (PF) devices, the statistical analysis of the corresponding data, and the methodologies for evaluation of the device performance in low emission neutron sources. A general mathematical framework is presented for the assessment of the reproducibility of the neutron emission of small PF devices given the shot-to-shot distribution and detector efficiency. The effect on the reproducibility in case of using two independent detectors is also discussed. The analysis is applied to the neutron emission of the plasma focus device PF-50J operating in repetitive mode (0.1-0.5 Hz and 65 J bank energy).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interaction of the high energy deuterons with the graphite target in the plasma focus devices based on Lee model

Numerical experiments are systematically carried out using the Lee model code extended to compute the ion beams on various plasma focus devices operated with Deuterium gas. The deuteron beam properties of the plasma focus are studied for low and high energy plasma focus device. The energy spectral distribution for deuteron ions ejected from the pinch plasma is calculated and the ion numbers with energy around 1 MeV is then determined. The deuteron–graphite target interaction is studied for different conditions. The yield of the reaction {sup 12}C(d,n){sup 13}N and the induced radioactivity for one and multi shots plasma focus devices in the graphite solid target is investigated. Our results present the optimized high energy repetitive plasma focus devices as an alternative to accelerators for the production of {sup 13}N short lived radioisotopes. However, technical challenges await solutions on two fronts: (a) operation of plasma focus machines at high rep rates for a sufficient period of time (b) design of durable targets that can take the thermal load.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

Vertically integrated graphene-semiconductor systems remain of significant technological importance for their promise to captivate new device physics and propel the development of advanced carbon-based opto-electronic devices. In this study, we carry out a series of bias-dependent transport, gate-dependent transport, and photoconduction measurements to probe the opto-electronic characteristics of metal-graphene-4H-SiC (0001) (Si-face) heterojunctions. The forward bias transport is found to deviate strongly from thermionic emission one as being controlled by the device circuitry and minority carrier injection mechanisms. An improved analytical model is offered and used to extract key junction parameters including series resistance of ∼80 kΩ, interface barrier height of ∼0.6 eV, and ideality factor of ∼6.1. The results of the photocurrent tests point to a light-assisted minority carrier injection as a key mechanism behind the photoconductive gain obtained in the devices subject to a weak, sub-bandgap cw-excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗