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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Polar coupling enabled nonlinear optical filtering at MoS 2 /ferroelectric heterointerfaces

Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS 2 and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Geometric frustration of Jahn–Teller order in the infinite-layer lattice

The Jahn–Teller effect, in which electronic configurations with energetically degenerate orbitals induce lattice distortions to lift this degeneracy, has a key role in many symmetry-lowering crystal deformations. Lattices of Jahn–Teller ions can induce a cooperative distortion, as exemplified by LaMnO 3 . Although many examples occur in octahedrally or tetrahedrally coordinated transition metal oxides due to their high orbital degeneracy, this effect has yet to be manifested for square-planar anion coordination, as found in infinite-layer copper, nickel, iron and manganese oxides. Here, for this work, we synthesize single-crystal CaCoO 2 thin films by topotactic reduction of the brownmillerite CaCoO 2.5 phase. We observe a markedly distorted infinite-layer structure, with ångström-scale displacements of the cations from their high-symmetry positions. This can be understood to originate from the Jahn–Teller degeneracy of the d xz and d yz orbitals in the d 7 electronic configuration along with substantial ligand–transition metal mixing. A complex pattern of distortions arises in a $2\sqrt2$ x $2\sqrt2$ x $1$ tetragonal supercell, reflecting the competition between an ordered Jahn–Teller effect on the CoO 2 sublattice and the geometric frustration of the associated displacements of the Ca sublattice, which are strongly coupled in the absence of apical oxygen. As a result of this competition, the CaCoO 2 structure forms an extended two-in–two-out type of Co distortion following ‘ice rules’.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ordered and disordered skyrmion states on a square substrate

We examine the ordering of skyrmions interacting with a square substrate created from a modulation of anisotropy using atomistic simulations. We consider fillings of ƒ = 1.5, 2.0, 2.5, 3.0, and 3.5 skyrmions per potential minimum as a function of magnetic field and sample size. For a filling of ƒ = 2.0, we find various dimer orderings, such as tilted dimer states, as well as antiferromagnetic ordering that is similar to the colloidal dimer ordering seen on square substrates. Furthermore, the ability of the skyrmions to change shape or annihilate produces additional states that do not occur in the colloidal systems. For certain parameters at ƒ = 2.0, half of the skyrmions can annihilate to form a square lattice, or a superlattice of trimers and monomers containing skyrmions of different sizes can form. At lower fields, ordered stretched skyrmion states can appear, and for zero field, there can be ordered stripe states. For ƒ = 3.0, we find ferromagnetic ordered trimers, tilted lattices, columnar lattices, and stretched phases. For fillings of ƒ = 1.5 and 2.5, we find bipartite lattices, different ordered and disordered states, and several extended disordered regions produced by frustration effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Remote Epitaxial Growth of Compound Semiconductors through Graphene

Epitaxial growth has been widely used for high-quality growth of crystalline materials. However, epitaxial growth techniques usually require lattice match and similar thermal expansion coefficient between growth material and substrate, which blocks this growth technique from wide applicability. Recently, van der Waals (vdW) epitaxy has been demonstrated that allows to relax the limitation of epitaxial growth. vdW epitaxy on layered or two-dimensional (2D) materials is mediated by weak vdW interactions. In addition to these interactions, a substrate below 2D materials also plays a role to intervene in the epitaxial growth process, leaving room to realize a novel epitaxial growth process: remote epitaxy. Potential fluctuation—the difference between potential energy maxima and minima along the surface of the substrate—is influenced by this remote interaction; the fluctuation is predominant over the vdW force, due to the atomic thickness of 2D materials. The remote interactions can be controlled by modulation of polarities of 2D materials and epitaxy materials. Polar-material-based heterostructure, such as GaAs, InP, GaP and GaN with their substrate sandwiching 2D materials, enables the semiconductor film to be exfoliated from the underlying substrates through the 2D materials. This process is expected to open a novel avenue for the field of non-silicon electronics and photonics, where the ability to re-use graphene-coated substrates allows savings on the high cost of non-silicon substrates.

Lee, Kyusang↗
DOE OSTI2026

Tuning Anisotropic Optical Properties of Inorganic and Hybrid Organic–Inorganic MXenes via Topochemical Surface Modification

Surface groups are central to the properties of MXenes, yet their role in optical anisotropy remains largely unexplored. Here, we use a topochemical route to synthesize single crystals of stacked Ti 3 C 2 Cl 2 and hybrid organic–inorganic MXenes (h-MXenes) with lateral sizes of 38–75 μm, rotational registry, and tunable interlayer spacing. Solid-state NMR spectroscopy shows that topochemical substitution generates mixed amido, imido, and hydride surface motifs, which modify the electronic structure of the Ti 3 C 2 inorganic core. Imaging spectroscopic ellipsometry with micron-scale spatial resolution enables reconstruction of the complex dielectric tensor of individual multilayer crystals. Ti 3 C 2 Cl 2 exhibits a type-II hyperbolicity above 930 nm, whereas h-MXenes do not display hyperbolicity within the measured 300–1700 nm window, instead showing reduced in-plane conductivity, suppressed out-of-plane light absorption, and a chain-length-dependent blue shift of a near-infrared absorption feature. These results demonstrate topochemical surface modification as a direct handle for engineering MXenes as surface-programmable optical media.

Hybrid materials↗
DOE OSTI2021

Layer Hall effect in a 2D topological axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi 2 Te 4 flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi 2 Te 4 shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50e 2 /h). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time PT-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E∙B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

36 MATERIALS SCIENCE↗
DOE OSTI2015

MoS{sub 2} oxygen sensor with gate voltage stress induced performance enhancement

Two-dimensional (2D) materials have recently attracted wide attention and rapidly established themselves in various applications. In particular, 2D materials are regarded as promising building blocks for gas sensors due to their high surface-to-volume ratio, ease in miniaturization, and flexibility in enabling wearable electronics. Compared with other 2D materials, MoS{sub 2} is particularly intriguing because it has been widely researched and exhibits semiconducting behavior. Here, we have fabricated MoS{sub 2} resistor based O{sub 2} sensors with a back gate configuration on a 285 nm SiO{sub 2}/Si substrate. The effects of applying back gate voltage stress on O{sub 2} sensing performance have been systematically investigated. With a positive gate voltage stress, the sensor response improves and the response is improved to 29.2% at O{sub 2} partial pressure of 9.9 × 10{sup −5} millibars with a +40 V back-gate bias compared to 21.2% at O{sub 2} partial pressure of 1.4 × 10{sup −4} millibars without back-gate bias; while under a negative gate voltage stress of −40 V, a fast and full recovery can be achieved at room temperature. In addition, a method in determining O{sub 2} partial pressure with a detectability as low as 6.7 × 10{sup −7} millibars at a constant vacuum pressure is presented and its potential as a vacuum gauge is briefly discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigating and utilizing electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. Further, we show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provide key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics

Sustainable electronics aim to reduce environmental impact by using ecofriendly materials, energy-efficient manufacturing, and recyclable components. However, existing approaches rely on complex, resource-intensive methods, rare metals, or nanomaterials with limited stability as well as plastic substrates, raising sustainability issues. Solution-processed two-dimensional (2D) materials offer a promising alternative: water-based and biocompatible conductive, semiconductive, and insulating 2D material inks can be produced with scalable techniques and are suitable for the fabrication of fully printed devices on low-cost and biodegradable paper substrates. However, 2D material only and fully printed diodes on paper have not yet been reported. Here, we demonstrate fully inkjet-printed 2D material-based diodes on paper using metal-insulator-semiconductor and metal-insulator-metal-semiconductor architectures. Water-based graphene and MoS2 inks, prepared by liquid-phase exfoliation, are used for the metallic and insulating films, while electrochemical exfoliation is used to produce the semiconducting MoS2 ink. The highest forward-to-reverse current ratio obtained is 330 (at ±2 V), while the forward current density is 1 mA/cm2 (at 1 V), making the diode performance comparable to the best solution-processed diodes reported so far. However, in contrast to previous works, fabrication occurs entirely at room temperature and ambient pressure, without using high-pressure sputtering, thermal evaporation, and any precious metal ink. The devices maintain stable performance under bending up to strain of 4% over 10,000 cycles. Finally, the diodes are successfully integrated with other 2D-material based electrical components to realize fully printed RC circuits, differentiators, integrators, and AC-to-DC converters onto paper, hence demonstrating the suitability of our approach for sustainable and disposable integrated circuits.

2D materials↗
DOE OSTI2023

Atom-by-Atom Direct Writing

Direct-write processes enable the alteration or deposition of materials in a continuous, directable, sequential fashion. Here, in this work, we demonstrate an electron beam direct-write process in an aberration-corrected scanning transmission electron microscope. This process has several fundamental differences from conventional electron-beam-induced deposition techniques, where the electron beam dissociates precursor gases into chemically reactive products that bond to a substrate. Here, we use elemental tin (Sn) as a precursor and employ a different mechanism to facilitate deposition. The atomic-sized electron beam is used to generate chemically reactive point defects at desired locations in a graphene substrate. Temperature control of the sample is used to enable the precursor atoms to migrate across the surface and bond to the defect sites, thereby enabling atom-by-atom direct writing.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Tunable band gap in few-layer graphene by surface adsorption

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel’s conductance individually. Using first principle calculations, we propose an alternative scheme to open a band gap in ABC-stacked FLG namely via single-side adsorption. The band gap is generally proportional to the charge transfer density. The capability to open a band gap of metal adsorption decreases in this order: K/Al . Cu/Ag/Au . Pt. Moreover, we find that even the band gap of ABA-stacked FLG can be opened if the bond symmetry is broken. Finally, a single-gated FET based on Cu-adsorbed ABC-stacked trilayer graphene is simulated. A clear transmission gap is observed, which is comparable with the band gap. This renders metal-adsorbed FLG a promising channel in a single-gated FET device.

ELECTRONIC PROPERTIES AND MATERIALS↗
DOE OSTI2016

Berry phase jumps and giant nonreciprocity in Dirac quantum dots

In this work we predict that a strong nonreciprocity in the resonance spectra of Dirac quantum dots can be induced by the Berry phase. The nonreciprocity arises in relatively weak magnetic fields and is manifest in anomalously large field-induced splittings of quantum dot resonances which are degenerate at $B$ = 0 due to time-reversal symmetry. This exotic behavior, which is governed by field-induced jumps in the Berry phase of confined electronic states, is unique to quantum dots in Dirac materials and is absent in conventional quantum dots. The effect is strong for gapless Dirac particles and can overwhelm the $B$ -induced orbital and Zeeman splittings. A finite Dirac mass suppresses the effect. The nonreciprocity, predicted for generic two-dimensional Dirac materials, is accessible through Faraday and Kerr optical rotation measurements and scanning tunneling spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Multiplication of Freestanding Compound Semiconductor Membranes from a Single Wafer by Alternating Growth with 2D Materials

Single-crystal compound semiconductors, such as III-N and III-V, are important building blocks for functional devices due to their high electron mobilities, wide range of bandgaps, and excellent optoelectronic properties. However, current methods to produce their freestanding membranes for heterointegration suffer from slow processes or poor material quality. Here, we demonstrate an approach to grow and harvest multiple wafer-scale single-crystal membranes with high throughput by introducing weak van der Waals interfaces between epitaxial layers. This is achieved by directly growing two-dimensional (2D) materials on compound semiconductors in their native deposition systems, which enables alternating growth of 2D material and compound semiconductor epitaxial layers in a single run. Each epilayer in the multi-stack structure is then sequentially harvested by mechanical exfoliation, producing multiple freestanding single-crystal membranes with extremely high throughput from a single wafer, primed for integration in mixed-dimensional heterostructures.

Han, Ne Myo↗
DOE OSTI2022

Multiplication of Freestanding Compound Semiconductor Membranes from a Single Wafer by Alternating Growth with 2D Materials

Single-crystal compound semiconductors, such as III-N and III-V, are important building blocks for functional devices due to their high electron mobilities, wide range of bandgaps, and excellent optoelectronic properties. However, current methods to produce their freestanding membranes for heterointegration suffer from slow processes or poor material quality. Here, we demonstrate an approach to grow and harvest multiple wafer-scale single-crystal membranes with high throughput by introducing weak van der Waals interfaces between epitaxial layers. This is achieved by directly growing two-dimensional (2D) materials on compound semiconductors in their native deposition systems, which enables alternating growth of 2D material and compound semiconductor epitaxial layers in a single run. Each epilayer in the multi-stack structure is then sequentially harvested by mechanical exfoliation, producing multiple freestanding single-crystal membranes with extremely high throughput from a single wafer, primed for integration in mixed-dimensional heterostructures.

Han, Ne Myo↗
DOE OSTI2026

Symmetry-Protected Moiré Band Engineering and Enhanced Electron–Phonon Coupling in Xe/Bi 2 Se 3 Superlattices: Path to Topological Superconductivity

Observation of superconductivity, magnetism, and correlated insulating phases driven by the moiré potential in twisted graphene bilayer has opened the exciting new field of “twistronics”. Even richer physics is expected if moiré superlattice could be generated on topological insulators; however, until now, experimental studies have been scarce. Here, we demonstrate topological moirés generated by adsorbing a monolayer of noble gas on a topological insulator. By angle-resolved photoemission spectroscopy, we show that the moiré potential replicates the topological surface state and affects it in a way fundamentally different from the trivial states. Replicated Dirac cones generally avoid crossings, except at the time-reversal invariant momenta that remain gapless. This creates van Hove singularities at the moiré Brillouin zone corners, providing the mechanism of enhancing correlations. Indeed, we observe a strong enhancement of the electron–phonon coupling strength that, if properly tuned, might lead to topological superconductivity and Majorana Fermions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetochiral tunneling in paramagnetic Co 1/3 NbS 2

Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co 1/3 NbS 2 , the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.

36 MATERIALS SCIENCE↗