New ways to improve transistor bias stability.
Ground emitter transistor amplifier biasing to improve quiescent voltage stability and minimum power dissipation
VOLTAGE REGULATOR↗
SEARCH · Engineering Papers
Results for “Transistors”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A transistorized rocket-borne proton magnetometer and associated data processing equipment.
Rocketborne transistorized magnetometer for geomagnetic field determination
TRANSISTOR CIRCUIT↗
The selection of transistors for use in ionizing radiation fields.
Transistor selection for use in ionizing radiation fields considering forward current gain degradation and collector-base leakage current increase
ELECTRIC CURRENT↗
A low-noise transistorized seismic amplifier
Transistor low noise seismic amplifier for fractional mv signals at ELF in ocean bottom seismographs and magnetic variometer
TRANSISTOR AMPLIFIER↗
Low-frequency generation noise in junction field effect transistors.
LF noise generation in junction field effect transistors due to charge fluctuations
NOISE INTENSITY↗
Tetrode-transistor fm oscillator.
Tetrode-driven transistor crystal oscillator with frequency controlled by variation of second base current of tetrode operating in reverse mode
FEEDBACK CONTROL SYSTEM↗
Simple, stable, and reliable transistorized dc amplifiers.
Simple, stable and reliable transistor DC FEEDBACK voltage amplifier employing differential input stage coupled with single common emitter stage for gain and drift rate dependence on temperature
DIFFERENTIAL AMPLIFIER↗
Design, development, fabrication, and delivery of improved MOS transistors Second quarterly progress report, 22 Aug. - 21 Nov. 1965
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silicon transistors
METAL OXIDE↗
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, field effect transistors
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, and field effect transistors
FIELD EFFECT TRANSISTOR /FET/↗
Fabrication and encapsulation of transistors and computation of voltage capability and current gain Second quarterly report, Oct. - Dec. 1965
Fabrication and encapsulation of epitaxial surface transistor
EPITAXIAL DEPOSITION↗
Design development, fabrication, and delivery of improved MOS transistors Third quarterly progress report, 22 Nov. 1965 - 21 Feb. 1966
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transistors
SILICON TRANSISTOR↗
Design, develop, fabricate and deliver silicon power transistors Final report, Jun. 1963 - Oct. 1965
Specifications, design, and fabrication of high power, high speed silicon transistors on large area epitaxial slices
DIFFUSION BONDING↗
Study to investigate the effects of ionizing radiation on transistor surfaces Second quarterly report, Oct. 1 - Dec. 31, 1965
Effects of electrical bias during irradiation on radiation damage and of different measurement conditions on magnitude of degradation in N-P-N PLANAR transistors
N-P-N JUNCTION↗
Development and fabrication of a high power silicon switching transistor Final report, Aug. 1965 - Apr. 1966
High-current, low-voltage silicon switching transistor redesigned for obtaining lowest possible saturation drop
SWITCHING ELEMENT↗
Research to determine failure modes for transistors
Failure modes of diffused planar transistors under stress screening and life testing
FAILURE MODE↗
Effects of electron radiation on unijunction transistors
Electron radiation effects on terminal characteristics of unijunction transistors
JUNCTION TRANSISTOR↗
Design, development, fabrication, and delivery of improved MOS transistors Final report, 21 May 1965 - 21 May 1966
Instability, high threshold voltage, and gamma radiation in MOS transistors
INSTABILITY↗
Study to investigate the effects of ionizing radiation on transistor surfaces Third quarterly report, period ending, 31 Mar. 1966
Ionizing radiation effects on transistor surfaces
TRANSISTOR↗