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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Sensor measures rapid temperature changes in fluid streams. Sensor withstands contacts with various corrosive fluids, high fluid-flow rates, and turbulences caused by rapid changes in flow rates. Capacitor is part of resonant bridge circuit which produces ac voltage that is proportional to temperature.
A photovoltaic cell device with a trapezoidal barrier is described. An aluminum, magnesium, or tantalum base is vapor deposited on a quartz substrate. An oxide or nitride film of the base metal is produced as an insulator by reaction in a glow discharge plasma to a thickness of less than 100 Angstroms. A metal, preferably gold, conter-electrode is vapor deposited on the insulating layer. A bias generator of high impedance is used to set and shift or modulate the spectral response of the device.
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The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.
Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.
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Interaction of two antiparallel acoustic surface waves (ASW) with an optical guided wave has been investigated theoretically as well as experimentally to obtain the convolution of two ASW signals. The maximum time-bandwidth product that can be achieved by such a convolver is shown to be of the order of 1000 or more. The maximum dynamic range can be as large as 83 dB.
In study, dependence of Mossbauer parameters on film thickness and film substrate was measured and related to iron tellurium structure. Report also describes film deposition technique (flash deposition) and Mossbauer apparatus.
Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.
Soldering procedure, successfully tested for attaching leads to silicon solar cells, cover-glasses, is simple, inexpensive, and very effective in forming stable connection. Procedure uses solder of indium alloyed with either silver or tin.
GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.
It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.
Glass slides were coated with plasma-polymerized tetrafluoroethylene films of different thickness using the glow discharge technique in a tube-shaped chamber, and the plasma conditions, film growth rates, light permeability of the polymer films, and particle bond strength in the polymer films were studied. Ashed sections of mouse organs and ashed bacillus spores were also coated to give them hydrophobic treatment without damaging their shapes or appearance. The hydrophobic coating of the specimens was successful, and the fine ash patterns were strongly fixed onto the glass slides, making permanent preparations.
Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.
Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.
The effect of electron radiation on selected candidate composite materials was investigated. Radiation damage mechanisms were identified and the coefficient of thermal expansion were measured for each type composite material. It was concluded that the threshold for major physical and mechanical property changes in the polysulfone films and in the polysulfone and epoxy composites is in excess of 1 x 10 to the 9th power rads of electrons. Based upon these data, the 5208 and 934 epoxies and the P1700 polysulfone composites would be acceptable for 5 to 10 year geosynchronous Earth environment missions receiving 1 x 10 to the 9th power rads of electron radiation.
Efforts to produce a Monte Carlo computer program for the analysis of crystal growth are briefly discussed. A literature survey was conducted of articles relating to the subject. A list of references reviewed is presented.