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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder

A document discusses a liquid crystal variable retarder, an electro-optic element that changes the polarization of an optical beam in response to a low-voltage electronic signal. This device can be fabricated so that the element creates, among other states, a half-wave of retardance that can be reduced to a very small retardance. When aligned to a polarized source, this can act to rotate the polarization by 90 in one state, but generate no rotation in the other state. If the beam is then incident on a polarization beam splitter, it will efficiently switch from one path to the other when the voltage is applied. The laser beam switching system has no moving parts, improving reliability over mechanical switching. It is low cost, tolerant of high laser power density, and needs only simple drive electronics, minimizing the required system resources.

Baer, James↗
NASA NTRS2013

Chalcogenide Nanoionic-based Radio Frequency Switch

A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

Nessel, James↗
NASA NTRS2013

Development and Testing of a Variable Conductance Thermal Acquisition, Transport, and Switching System

This paper describes the development and testing of a scalable thermal management architecture for instruments, subsystems, or systems that must operate in severe space environments with wide variations in sink temperature. The architecture involves a serial linkage of one or more hot-side variable conductance heat pipes (VCHPs) to one or more cold-side loop heat pipes (LHPs). The VCHPs provide wide area heat acquisition, limited distance thermal transport, modest against gravity pumping, concentrated LHP startup heating, and high switching ratio variable conductance operation. The LHPs provide localized heat acquisition, long distance thermal transport, significant against gravity pumping, and high switching ratio variable conductance operation. The single-VCHP, single-LHP system described herein was developed to maintain thermal control of a small robotic lunar lander throughout the lunar day-night thermal cycle. It is also applicable to other variable heat rejection space missions in severe environments. Operationally, despite a 60-70% gas blocked VCHP condenser during ON testing, the system was still able to provide 2-4 W/K ON conductance, 0.01 W/K OFF conductance, and an end-to-end switching ratio of 200-400. The paper provides a detailed analysis of VCHP condenser performance, which quantified the gas blockage situation. Future multi-VCHP/multi-LHP thermal management system concepts that provide power/transport length scalability are also discussed.

Bugby, David C.↗
NASA NTRS2014

Operation of an ADR Using Helium Exchange Gas as a Substitute for a Failed Heat Switch

The Soft X-ray Spectrometer (SXS) is one of four instruments on the Japanese Astro-H mission, which is currently planned for launch in late 2015. The SXS will perform imaging spectroscopy in the soft X-ray band (0.3-12 keV) using a 6 6 pixel array of microcalorimeters cooled to 50 mK. The detectors are cooled by a 3-stage adiabatic demagnetization refrigerator (ADR) that rejects heat to either a superfluid helium tank (at 1.2 K) or to a 4.5 K Joule-Thomson (JT) cryocooler. Four gas-gap heat switches are used in the assembly to manage heat flow between the ADR stages and the heat sinks. The engineering model (EM) ADR was assembled and performance tested at NASA/GSFC in November 2011, and subsequently installed in the EM dewar at Sumitomo Heavy Industries, Japan. During the first cooldown in July 2012, a failure of the heat switch that linked the two colder stages of the ADR to the helium tank was observed. Operation of the ADR requires some mechanism for thermally linking the salt pills to the heat sink, and then thermally isolating them. With the failed heat switch unable to perform this function, an alternate plan was devised which used carefully controlled amounts of exchange gas in the dewar's guard vacuum to facilitate heat exchange. The process was successfully demonstrated in November 2012, allowing the ADR to cool the detectors to 50 mK for hold times in excess of 10 h. This paper describes the exchange-gas-assisted recycling process, and the strategies used to avoid helium contamination of the detectors at low temperature.

Adiabatic demagnetization↗
NASA NTRS2018

Active Gas-Gap Heat Switch with Fast Thermal Response

An active gas-gap heat switch may significantly reduce the time required to transition between the open and closed states, reduce the heat require to warm the getter, and reduce the heat that leaks from the getter to the switch body. A thermal interface at one end of the active gas-gap heat switch may include a plurality of fins. A getter assembly may be hermetically attached to the thermal interface and a containment tube may surround and house the plurality of fins.

Shirron, Peter J.↗
NASA NTRS2020

High Performance Thermal Switch for Lunar and Planetary Surface Extreme Environments

This paper describes a high performance thermal switch for lunar/planetary extreme environments. This device has been given the name Reverse-Operation DTE Thermal Switch (or ROD-TSW). Two different prototypes were designed, built, and tested. Their basis of operation is the mating/de-mating of parallel flat metal surfaces driven by the differential thermal expansion (DTE) between mid-to-high CTE metal/polymer or metal-only end-pieces and a low CTE, low thermal conductivity (k) metal/polymer support rod. The requirements were to be fully ON above 300 K and fully OFF below 260 K. A series of four tests were carried out to verify/qualify the prototypes. In the first (non-vacuum) test, the thermal switches were cooled with freeze-spray and the non-conductive rod in the OFF thermal path allowed electrical resistance to confirm the 273 K as-designed ON/OFF actuation temperature. In the second (vacuum) test, a calibrated Q-meter was used, which indicated 5 W/K ON, 0.002 W/K OFF conductance (2500:1 ON/OFF ratio). To increase readiness to TRL6, a vibration test with pre/post thermal cycling followed by a 36-day test in a relevant environment were also carried out. This paper describes the development program and on-going related work at JPL.

Bugby, David C↗
NASA NTRS2020

High Performance Thermal Switch for Lunar and Planetary Surface Extreme Environments

This paper describes a high performance thermal switch for lunar/planetary extreme environments. This device has been given the name Reverse-Operation DTE Thermal Switch (or ROD-TSW). Two different prototypes were designed, built, and tested. Their basis of operation is the mating/de-mating of parallel flat metal surfaces driven by the differential thermal expansion (DTE) between mid-to-high CTE metal/polymer or metal-only end-pieces and a low CTE, low thermal conductivity (k) metal/polymer support rod. The requirements were to be fully ON above 300 K and fully OFF below 260 K. A series of four tests were carried out to verify/qualify the prototypes. In the first (non-vacuum) test, the thermal switches were cooled with freeze-spray and the non-conductive rod in the OFF thermal path allowed electrical resistance to confirm the 273 K as-designed ON/OFF actuation temperature. In the second (vacuum) test, a calibrated Q-meter was used, which indicated 5 W/K ON, 0.002 W/K OFF conductance (2500:1 ON/OFF ratio). To increase readiness to TRL6, a vibration test with pre/post thermal cycling followed by a 36-day test in a relevant environment were also carried out. This paper describes the development program and on-going related work at JPL.

Bugby, David C.↗
DOE OSTI2013

Photoconductive switch package

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

47 OTHER INSTRUMENTATION↗
DOE OSTI2013

Micro electro mechanical system optical switching

The present disclosure includes apparatus, system, and method embodiments that provide micro electo mechanical system optical switching and methods of manufacturing switches. For example, one optical switch embodiment includes at least one micro electro mechanical system type pivot mirror structure disposed along a path of an optical signal, the structure having a mirror and an actuator, and the mirror having a pivot axis along a first edge and having a second edge rotatable with respect to the pivot axis, the mirror being capable of and arranged to be actuated to pivot betweeen a position parallel to a plane of an optical signal and a position substantially normal to the plane of the optical signal.

42 ENGINEERING↗
DOE OSTI2015

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Capacitive microelectromechanical switches with dynamic soft-landing

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2015

Photoconductive switch package

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

14 SOLAR ENERGY↗
DOE OSTI2016

Hybrid zero-voltage switching (ZVS) control for power inverters

A power inverter combination includes a half-bridge power inverter including first and second semiconductor power switches receiving input power having an intermediate node therebetween providing an inductor current through an inductor. A controller includes input comparison circuitry receiving the inductor current having outputs coupled to first inputs of pulse width modulation (PWM) generation circuitry, and a predictive control block having an output coupled to second inputs of the PWM generation circuitry. The predictive control block is coupled to receive a measure of Vin and an output voltage at a grid connection point. A memory stores a current control algorithm configured for resetting a PWM period for a switching signal applied to control nodes of the first and second power switch whenever the inductor current reaches a predetermined upper limit or a predetermined lower limit.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Capacitive microelectromechanical switches with dynamic soft-landing

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state.

42 ENGINEERING↗
DOE OSTI2016

A 600 VOLT MULTI-STAGE, HIGH REPETITION RATE GAN FET SWITCH

Using recently available GaN FETs, a 600 Volt three- stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.

43 PARTICLE ACCELERATORS↗
DOE OSTI2017

High-voltage, high-current, solid-state closing switch

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Radio frequency-assisted fast superconducting switch

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗