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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al 2 O 3 /MgO memristors

Ultrathin (sub-2 nm) Al 2 O 3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (V O ) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al 2 O 3 /MgO memristors with V O -doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al 2 O 3 atomic layer stack (ALS) using an in vacuo ALD. At a fixed memristor thickness of 17 Al 2 O 3 /MgO atomic layers (~1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al 2 O 3 /MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the V O concentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

CRNT4SBML: a Python package for the detection of bistability in biochemical reaction networks

Motivation: Signaling pathways capable of switching between two states are ubiquitous within living organisms. They provide the cells with the means to produce reversible or irreversible decisions. Switchlike behavior of biological systems is realized through biochemical reaction networks capable of having two or more distinct steady states which are dependent on initial conditions. Investigation of whether a certain signaling pathway can confer bistability involves a substantial amount of hypothesis testing. The cost of direct experimental testing can be prohibitive. Therefore, constraining the hypothesis space is highly bene?cial. One such methodology is based on Chemical Reaction Network Theory which uses computational techniques to rule out pathways that are not capable of bistability regardless of kinetic constant values and molecule concentrations. Although useful, these methods are complicated from both pureandcomputationalmathematicsperspectives.Thus,theiradoptionisverylimitedamongstbiologists. Results: We brought Chemical Reaction Network Theory approaches closer to experimental biologists by automating all the necessary steps in CRNT4SMBL. The input is based on SBML format which is the community standard for biological pathway communication. The tool parses SBML and derives C-graph representations of the biological pathway with mass action kinetics. Next steps involve an ef?cient search for potential saddle-node bifurcation points using an optimization technique. This type of bifurcation is important as it has the potential of acting as a switching point between two steady states. Finally, if any bifurcation points are present, numerical continuation analysis extends the equilibria branches for generating the diagram. Presence of an S-shaped bifurcation diagram indicates that the pathway acts as a bistable switch for the given optimization parameters. Availability: CRNT4SBML is available via the Python Package Index. The documentation can be found at https://crnt4sbml.readthedocs.io. CRNT4SBML is licensed under the Apache Software License 2.0. Contact: vladislav.petyuk@pnnl.gov

Reyes, Brandon C.↗
DOE OSTI2025

Noise-induced stabilization of dynamical states with broken time-reversal symmetry

Under a high frequency drive, Josephson junctions demonstrate Shapiro steps of quantized voltage. These are dynamically stabilized states in which the phase across the junction locks to the external drive. We explore the stochastic switching between two symmetric steps at $\frac{hw}{2e}$ and –$\frac{hw}{2e}$. Surprisingly, the switching rate exhibits a pronounced nonmonotonicity as a function of temperature, violating the general expectation that transitions should become faster with temperature. As a result, we explain this behavior by realizing that the system retains memory of the dynamic state from which it is switching, thereby breaking the conventional simplifying assumptions about separations of timescales.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Temperature-Assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics

The combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (TPFM) opens a pathway for probing local temperature-induced phase transitions in ferroics, exploring the temperature dependence of polarization dynamics in ferroelectrics and potentially discovering coupled phenomena driven by strong temperature and electric field gradients. In this study we analyze the signal-formation mechanism in TPFM and explore the interplay between thermal- and bias-induced switching in model ferroelectric materials. Furthermore, we explore the contributions of the flexoelectric and thermopolarization effects to the local electromechanical response and demonstrate that the latter can be significant for “soft” ferroelectrics. These results establish a framework for the quantitative interpretation of TPFM observations, predict the emergence of nontrivial switching and relaxation phenomena driven by nonlocal thermal-gradient-induced polarization switching, and open a pathway for exploring the physics of thermopolarization effects in various noncentrosymmetric and centrosymmetric materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Interfacial triferroicity in monolayer chromium dihalide

Couplings between different ferroics in two-dimensional (2D) materials, with atomic thickness and van der Waals surface, have been long sought but not yet realized. We show the first-principles evidence of unique triferroic couplings in recently synthesized CrI 2 monolayer. Its ferroelasticity with a low switching barrier stems from the Jahn-Teller effect. When coupled with the interaction of a substrate, a type of interfacial ferroelectricity with direction determined by the ferroelastic states can emerge which can be switched following the same low-barrier pathway of ferroelastic switching. The direction of its striped antiferromagnetism is also governed by its ferroelastic states, leading to a coupling of ferroelasticity, ferroelectricity, and magnetism. Such mechanism of multiferroic couplings, denoted as interfacial Jahn-Teller triferroicity, can be applied to other 2D materials such as CuC l2 and their Janus monolayers, enabling electrical manipulation of spintronics for efficient nonvolatile random-access memories.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantifying the quantum heat contribution from a driven superconducting circuit

Heat flow management at the nanoscale is of great importance for emergent quantum technologies. For instance, a thermal sink that can be activated on-demand is a highly desirable tool that may accommodate the need to evacuate excess heat at chosen times, e.g., to maintain cryogenic temperatures or reset a quantum system to ground, and the possibility of controlled unitary evolution otherwise. Here we propose a design of such heat switch based on a single coherently driven qubit. We show that the heat flow provided by a hot source to the qubit can be switched on and off by varying external parameters, the frequency and the intensity of the driving. The complete suppression of the heat flow is a quantum effect occurring for specific driving parameters that we express and we analyze the role of the coherences in the free-qubit energy eigenbasis. We finally study the feasibility of this quantum heat switch in a circuit QED setup involving a charge qubit coupled to thermal resistances. In this work, we demonstrate robustness to experimental imperfections such as additional decoherence, paving the road towards experimental verification of this effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, in this study, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A versatile X-ray phase retarder for lock-in XMCD measurements

X-ray magnetic circular dichroism (XMCD) is a technique commonly used to probe magnetic properties of materials with element and orbital selectivity, which requires the use of circularly polarized (CP) X-rays. It is possible to accomplish XMCD experiments with fixed CP and alternating the magnetic field orientation, but most reliable data are obtained when alternating the magnetization orientation and the polarization between right and left helicities. A versatile strategy has been developed to perform XMCD experiments using a hard X-ray quarter-wave plate, at both polychromatic dispersive and conventional monochromatic optics, in combination with synchronous data acquisition. The switching frequency waveform is fed into a lock-in amplifier to detect and amplify the XMCD signal. The results on a reference sample demonstrate an improvement in data quality and acquisition time. The instrumentation successfully generated 98% of CP X-rays switching the beam helicity at 13 Hz, with the possibility of faster helicity switching once it is installed at the new Brazilian fourth-generation source, SIRIUS.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

DC Link Capacitor Reduction with Feedforward Control in Series-Series Compensated Wireless Power Transfer Systems

This paper presents the use of feedforward control to reduce the input side DC link capacitance of series-series compensated wireless power transfer (WPT) systems. Compared to conventional control schemes for WPT systems, the proposed feedforward-based approach achieves significant reduction in the DC link capacitor without any complicated voltage or current sensing requirements from the secondary side. This results in more compact hardware architecture. The proposed method shows minimal increase in the turn-on switching loss of the inverter. The switching loss is analyzed, and detailed results are presented relating the switching loss to the DC link capacitance and voltage ripple for proper tradeoff between losses and capacitor size. Simulation and experimental results presented validate the proposed scheme.

Mukherjee, Subho↗
DOE OSTI2022

Triple Phase-Shift Optimization of SiC-based Dual-Active Bridge DC/AC Converter

This paper presents a loss-optimized Triple Phase-Shift (TPS) switching strategy for Dual-Active Bridge (DAB) based converters. The proposed strategy considers minimizing total converter loss with respect to minimizing device rms cur-rents, enabling Zero-Voltage Switching (ZVS) turn-on of devices and accurate control of device turn-off current. A model for switching currents is presented, followed by a loss model and optimization strategy. A 1.3kV/100kW prototype based on SiC MOSFETs was used in this work and experimental results up to 10kW show the proposed TPS strategy to be more efficient for operation.

Vetrivelan, Adithyan↗
DOE OSTI2024

Instant Startup and Grid Synchronization of Inverter Based Resources

This paper introduces an innovative approach for instant startup of inverter-based resources (IBRs), which attains synchronization with the grid via the already embedded direct current feedback control. The startup process utilizes direct current control throughout each switching cycle, enabling a process that is free from inrush current. Uniquely, this method determines the grid phase angle by evaluating the current differences across switching cycles, a significant difference from traditional methods that often rely on grid or points of common coupling (PCC) voltage. An analytical model has been constructed, highlighting that the grid phase angle can be obtained in just two switching cycles. The paper details the principle of instant grid synchronization and presents both simulation and experimental results to substantiate the proposed method.

He, Yuchen↗
DOE OSTI2021

Comprehensive Efficiency Analysis of Current Source Inverter Based on CSI-Type Double Pulse Test and Genetic Algorithm

A current-source inverter (CSI) has a natural output voltage boost feature that can be advantageous for traction applications. Switching frequency is one of the easily-controlled variables that can be adjusted to improve the CSI efficiency at different operating points when the boost function is used. This paper investigates a CSI-based double-pulse test (DPT) measurement that mimics normal operation of the CSI. A loss model of the CSI is developed based on the CSI-type DPT experimental results. The impacts of the switching frequency and voltage boost ratio on the CSI efficiency and output voltage ripple are investigated. Based on the loss model, a genetic algorithm has been introduced that makes it possible to optimize the CSI's switching frequency and modulation index to maximize its efficiency under any desired operating condition.

current-source inverter, genetic algorithm, SPM ma↗
DOE OSTI2023

Suppression of Parasitic Voltage Oscillation in Power Modules by Turn-Off Current Zero Placement

This paper presents a frequency-domain analysis of the turn-off equivalent switching network of a hard-switched semiconductor switching cell. This paper also proposes a novel method to suppress parasitic voltage ringing by placing the turn-off current zero at the parasitic resonant frequency. The turn-off current was decomposed into ramp functions and a constant-valued function to facilitate obtaining the frequency components of the turn-off current using the Laplace transform of standard signals. The proposed frequency-domain modeling of the parasitic voltage ringing and the suppression were validated by detailed circuit simulation using parameters corresponding to prior literature with experimental validation.

Galigekere, Veda Prakash↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗
DOE OSTI2021

A Compact 50kW High Power Density, Hybrid 3-Level Paralleled T-type Inverter for More Electric Aircraft Applications

The demand for high performing, lightweight, reliable inverters, increased the scope of wide bandgap and high-switching frequency based solutions. To achieve such high efficiency inverters, it is vital to focus on the system level design considerations to maximize the benefits of these advanced technologies. This paper presents an improved design based on considerations to further reap the benefits of choosing the right inverter topology; increased capabilities through paralleling devices, with reduced total number of switches; and designing a planarized inverter with PCB based busbar. Appropriate thermal analysis and heatsink design has aided in increased system power density along with the overall efficiency. Demonstration of a 50kW 3-phase 3-level paralleled T-type SiC inverter operating at 40kHz switching frequency for aircraft applications is shown to evaluate the benefits of proposed design methodology. Here, the prototype achieves a high power density of 11kW/L.

42 ENGINEERING↗
DOE OSTI2025

A Digital Three Level Space Vector Modulator for High Frequency Vector Sequence Generation

This letter proposes a digital high-speed three-level space vector pulse width modulator (3L-SVPWM). A conventional 3L-SVPWM is typically computation-based, involving a sequential execution of sub-tasks on a digital signal processor (DSP) based controller. The resulting high computation time of 5.4 μs limits the implementation of additional control blocks for switching frequencies greater than 100 kHz. This is overcome by transforming sub-tasks into digital blocks with 1-0 decisions and simpler arithmetic operations. The sub-task blocks are executed concurrently on a programmable logic device (PLD). Hence, a fast 3L-SVPWM execution in 140 ns is achieved. The proposed digital 3L-SVPWM enables high switching frequency operation of wide bandgap (WBG) device-based 3 L inverters to generate high fundamental frequency waveforms. A finite state machine is an integral part of the proposed implementation with the ability to generate any vector sequence, maximizing the usage of redundant vector states in 3L-SVPWM. Here, the proposed digital 3L-SVPWM operation is demonstrated with a GaN-based 3 L active neutral point clamped (3L-ANPC) inverter. Experimental results are presented at 250 kHz switching frequency to generate vector sequences for center-aligned SVPWM (CA-SVPWM) and common mode voltage reduced SVPWM (CMVR-SVPWM). The results also showcase a high fundamental frequency generation capability of 10 kHz.

active neutral point clamped inverter↗