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At least 937 records · Page 52

High-strength silicon carbides by hot isostatic pressing

Silicon carbide has strong potential for heat engine hardware and other high-temperature applications because of its low density, good strength, high oxidation resistance, and good high-temperature creep resistance. Hot isostatic pressing (HIP) was used for producing alpha and beta silicon carbide (SiC) bodies with near-theoretical density, ultrafine grain size, and high strength at processing temperatures of 1900 to 2000 C. The HIPed materials exhibited ultrafine grain size. Furthermore, no phase transformation from beta to alpha was observed in HIPed beta-SiC. Both materials exhibited very high average flexural strength. It was also shown that alpha-SiC bodies without any sintering aids, when HIPed to high final density, can exhibit very high strength. Fracture toughness K (sub C) values were determined to be 3.6 to 4.0 MPa m (sup 1/2) for HIPed alpha-SiC and 3.7 to 4.1 MPa m (sup 1/2) for HIPed beta-SiC. In the HIPed specimens strength-controlling flaws were typically surface related. In spite of improvements in material properties such as strength and fracture toughness by elimination of the larger strength-limiting flaws and by grain size refinement, HIPing has no effect on the Weibull modulus.

Dutta, Sunil↗

High-strength silicon carbides by hot isostatic pressing

Silicon carbide has strong potential for heat engine hardware and other high-temperature applications because of its low density, good strength, high oxidation resistance, and good high-temperature creep resistance. Hot isostatic pressing (HIP) was used for producing alpha and beta silicon carbide (SiC) bodies with near-theoretical density, ultrafine grain size, and high strength at processing temperatures of 1900 to 2000 C. The HIPed materials exhibited ultrafine grain size. Furthermore, no phase transformation from beta to alpha was observed in HIPed beta-SiC. Both materials exhibited very high average flexural strength. It was also shown that alpha-SiC bodies without any sintering aids, when HIPed to high final density, can exhibit very high strength. Fracture toughness K (sub C) values were determined to be 3.6 to 4.0 MPa m (sup 1/2) for HIPed alpha-SiC and 3.7 to 4.1 MPa m (sup 1/2) for HIPed beta-SiC. In the HIPed specimens strength-controlling flaws were typically surface related. In spite of improvements in material properties such as strength and fracture toughness by elimination of the larger strength-limiting flaws and by grain size refinement, HIPing has no effect on the Weibull modulus.

Dutta, Sunil↗

Oxidation of Boron Nitride in Composites

Boron nitride (BN) is a prime candidate for fiber coatings in silicon carbide (SiC) fiber-reinforced SiC matrix composites. The properties of BN allow the fiber to impart beneficial composite properties to the matrix, even at elevated temperatures. The problem with BN is that it is readily attacked by oxygen. Although BN is an internal component of the composite, a matrix crack or pore can create a path for hot oxygen to attack the BN. This type of attack is not well understood. A variety of phenomena have been observed. These include borosilicate glass formation, volatilization of the BN, and under some conditions, preservation of the BN. In this study at the NASA Lewis Research Center, a series of BN materials and BN-containing model composites were methodically examined to understand the various issues dealing with the oxidation of BN in composites. Initial studies were done with a series of monolithic BN materials prepared by hot pressing and chemical vapor deposition (CVD). From these studies, we found that BN showed a strong orientation effect in oxidation and was extremely sensitive to the presence of water vapor in the environment. In addition, CVD material deposited at a high temperature showed much better oxidation behavior than CVD material deposited at a lower temperature.

Jacobson, Nathan S.↗

Evolution of size-selected Pt cluster catalysts on prototypical oxide supports

The current quest for new pathways into sustainable, efficient and durable energy conversion technologies makes the used for a fundamental understanding of the atomic-scale phenomena underlying catalytic processes ever more pressing. In this context, characterizing catalyst particles in situ provides valuable information about the evolution of their composition, structure, oxidation state and charge state during an ongoing process. To disentangle the influence of individual parameters – temperature, pressure, gas composition, cluster size, as well as support acidity, redox state and defect density – it is crucial to control them precisely and separately in experiments. At the example of size-selected Pt n clusters – i.e. sub-nm particles defined to the exact number of atoms – on flat oxide supports, we follow their rich evolution phenomena via (synchrotron-based) X-ray photoelectron spectroscopy (XPS) and scanning tunnelling microscopy (STM) during temperature ramps and in various gas environments. Here, we present our experience with these highly defined, yet complicated-to-create samples in ultra-high vacuum (UHV) and at mbar pressures. We discuss their stability during transport to synchrotrons and under reaction conditions on three prototypical oxide supports and show the various phenomena that can be disentangled. Ptn clusters on the non-reducible silicon dioxide, SiO 2 , remain size-selected and show remarkable stability. Doping strongly influences the size-dependent binding energy shifts and changes the Pt response to oxidative and reaction conditions, which we attribute to different cluster geometries: p-type doping leads to wetting, enhanced sinter resistance and a diminished response to oxidative environments, compared to clusters on n-type doped samples. We compare the system with our previous findings of a similar change in dimensionality for Pt 20 clusters on the reducible ceria, CeO 2 (111), support, induced by modulation of its O vacancy density. The Pt n /CeO 2 system is particularly interesting for strategies to stabilize and redisperse Pt clusters dynamically. Finally, we study the evolution of Pt n clusters on another reducible oxide support, magnetite, Fe 3 O 4 (001), in 0.1 mbar alternating redox conditions at RT and elevated temperature. In analogy to findings previously reported for Pt/TiO 2 (110), the clusters either become encapsulated by a thin oxide film via strong metal–support interaction (SMSI) or deeply buried in the magnetite. Overall, our approach of following the evolution of size-selected clusters on oxide supports leads to fundamental atomic-scale insights on nano-scale catalyst materials, on our path to sustainable, dynamic and self-repairing catalysts.

Falling, Lorenz J. [Technical Univ. of Munich (Ger↗

Screen printable copper pastes for silicon solar cells

The current work demonstrates the successful metallization of a PERC silicon solar cell with screen-printable copper (Cu) paste that is sintered at elevated temperature in air atmosphere. The existing state of the art in Silicon (Si) solar cell metallization is silver (Ag) paste; Cu cost is 1/100th the cost of Ag and has a comparable conductivity. However, Cu undergoes rapid oxidation at elevated temperatures and the high diffusion of Cu into Si restricts its usage in the metallization of silicon solar cells. In this paper, a Cu paste containing a proprietary mixture of antioxidant additives and diffusion inhibitors was used to make front gridlines on PERC cells. The Cu-printed cells were fired in an IR belt furnace with a peak temperature of 576°C in air atmosphere. The solar cells discussed here reached an efficiency of 19%, which is 88% of the efficiency measured for a commercial Ag-printed cell. The working devices were further characterized using STEM, EDX, ToF-SIMS and long-term suns-V oc studies demonstrating an absence of Cu diffusion. Furthermore, thermally stressing the Cu-printed solar cells yielded a reduction of less than 1.9% of the initial pseudo fill factor (pFF) after 1000 hours at 200°C. Here, the shunt resistance of cells monitored over 3 years remained within 2.5% of its initial value, which demonstrates the effectiveness of the Cu diffusion barrier.

14 SOLAR ENERGY↗

Method Developed for Improving the Thermomechanical Properties of Silicon Carbide Matrix Composites

Today, a major thrust for achieving engine components with improved thermal capability is the development of fiber-reinforced silicon-carbide (SiC) matrix composites. These materials are not only lighter and capable of higher use temperatures than state-of-the-art metallic alloys and oxide matrix composites (approx. 1100 C), but they can provide significantly better static and dynamic toughness than unreinforced silicon-based monolithic ceramics. However, for successful application in advanced engine systems, the SiC matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetime. Since the high-temperature structural life of ceramic materials is typically controlled by creep-induced flaw growth, a key composite property requirement is the ability to display high creep resistance under these conditions. Also, because of the possibility of severe thermal gradients in the components, the composites should provide maximum thermal conductivity to minimize the development of thermal stresses. State-of-the-art SiC matrix composites are typically fabricated via a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by high-performance fibers, (2) chemical vapor infiltration of a fiber coating material such as boron nitride (BN) into the preform, and (3) infiltration of a SiC matrix into the remaining porous areas in the preform. Generally, the highest performing composites have matrices fabricated by the CVI process, which produces a SiC matrix typically more thermally stable and denser than matrices formed by other approaches. As such, the CVI SiC matrix is able to provide better environmental protection to the coated fibers, plus provide the composite with better resistance to crack propagation. Also, the denser CVI SiC matrix should provide optimal creep resistance and thermal conductivity to the composite. However, for adequate preform infiltration, the CVI SiC matrix process typically has to be conducted at temperatures below 1100 C, which results in a SiC matrix that is fairly dense, but contains metastable atomic defects and is nonstoichiometric because of a small amount of excess silicon. Because these defects typically exist at the matrix grain boundaries, they can scatter thermal phonons and degrade matrix creep resistance by enhancing grain-boundary sliding. To eliminate these defects and improve the thermomechanical properties of ceramic composites with CVI SiC matrices, researchers at the NASA Glenn Research Center developed a high-temperature treatment process that can be used after the CVI SiC matrix is deposited into the fiber preform.

Bhatt, Ramakrishna T.↗

Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory

Here, we present a formulation of spin-conserving and spin-flip hybrid time-dependent density functional theory (TDDFT), including the calculation of analytical forces, which allows for efficient calculations of excited state properties of solid-state systems with hundreds to thousands of atoms. We discuss an implementation on both GPU- and CPU-based architectures along with several acceleration techniques. We then apply our formulation to the study of several point defects in semiconductors and insulators, specifically the negatively charged nitrogen-vacancy and neutral silicon-vacancy centers in diamond, the neutral divacancy center in 4H silicon carbide, and the neutral oxygen-vacancy center in magnesium oxide. Our results highlight the importance of taking into account structural relaxations in excited states in order to interpret and predict optical absorption and emission mechanisms in spin defects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface diagnostics platform for thin-film solid-state batteries

Understanding the impedances of battery materials and their interfaces remains a major challenge, usually addressed by electrochemical impedance spectroscopy (EIS) where frequency-dependent complex impedance of full battery cells is measured and then modeled by a network of connected electrical elements. As conventionally applied, this approach produces ambiguity in that (1) multiple different network configurations may fit the data convincingly and (2) the method offers no direct association of the electrical elements with physical features of the battery. Here we present a new methodology that resolves both sources of ambiguity, enabled by expanding the experimental scope to directly inform the configuration of elements and their parameters in the network model. We demonstrate this methodology using thin film fabrication of solid state battery devices patterned by shadow masked sputter deposition, so that diagnostic devices corresponding to individual interface and material components can be fabricated simultaneously with full cell batteries. EIS models for the diagnostic devices can then be connected to form full cell networks whose topology matches the well-known physical configuration of the battery. When connected in this way, the full network model – made from connecting the diagnostic device EIS models – fits the full cell EIS data. For the case of a thin film solid state battery composed of amorphous silicon anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and lithium vanadium oxide (Li x V 2 O 5 ) cathode, we show that the approach allows us to identify ionic impedance/conductivity of the cathode/electrolyte as a limiting impedance and the anode/electrolyte interface cycling instability as a primary degradation factor.

25 ENERGY STORAGE↗

Application of surface analysis to solve problems of wear

Results are presented for the use of surface analytical tools including field ion microscopy, Auger emission spectroscopy analysis (AES), cylindrical mirror Auger analysis and X-ray photoelectron spectroscopy (XPS). Data from the field ion microscope reveal adhesive transfer (wear) at the atomic level with the formation of surface compounds not found in the bulk, and AES reveals that this transfer will occur even in the presence of surface oxides. Both AES and XPS reveal that in abrasive wear with silicon carbide and diamond contacting the transition metals, the surface and the abrasive undergo a chemical or structural change which effects wear. With silicon carbide, silicon volatilizes leaving behind a pseudo-graphitic surface and the surface of diamond is observed to graphitize.

Buckley, D. H.↗

Proceedings of the Advisory Committee on Standardization of Carbon-Phenolic Test Methods and Specifications

Proceedings of the Advisory Committee on Standardization of carbon-phenolic test methods and specifications are compiled. The following subject areas are covered: ashing procedures and alkali metal content of carbon fiber and fabrics; SPIP product identification code; SPIP initiative to adopt a water-soluble rayon yarn lubricant/size for weaving; fabric oxidation mass loss test; shelf life limit for prepregs, industry standard; silicon contamination update; resin, filler, and fabric content in prepreg; carbon assay testing calibration; thiokol rayon specifications; and SPIP low conductivity PAN program.

Hall, William B.↗

Coatings for Graphite Fibers

Several approaches for applying high resistance coatings continuously to graphite yarn were investigated. Two of the most promising approaches involved (1) chemically vapor depositing (CVD) SiC coatings on the surface of the fiber followed by oxidation, and (2) drawing the graphite yarn through an organo-silicone solution followed by heat treatments. In both methods, coated fibers were obtained which exhibited increased electrical resistances over untreated fibers and which were not degraded. This work was conducted in a previous program. In this program, the continuous CVD SiC coating process used on HTS fiber was extended to the coating of HMS, Celion 6000, Celion 12000 and T-300 graphite fiber. Electrical resistances three order of magnitude greater than the uncoated fiber were measured with no significant degradation of the fiber strength. Graphite fibers coated with CVD Si3N4 and BN had resistances greater than 10(exp 6) ohm/cm. Lower pyrolysis temperatures were used in preparing the silica-like coatings also resulting in resistances as high as three orders of magnitude higher than the uncoated fiber. The epoxy matrix composites prepared using these coated fibers had low shear strengths indicating that the coatings were weak.

Galasso, F. S.↗

Microfabricated Chemical Sensors for Safety and Emission Control Applications

Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Hunter, G. W.↗

Advanced Sensor Systems for Biotelemetry

The present invention relates to telemetry-based sensing systems that continuously measures physical, chemical and biological parameters. More specifically, these sensing systems comprise a small, modular, low-power implantable biotelemetry system capable of continuously sensing physiological characteristics using implantable transmitters, a receiver, and a data acquisition system to analyze and record the transmitted signal over several months. The preferred embodiment is a preterm labor and fetal monitoring system. Key features of the invention include Pulse Interval Modulation (PIM) that is used to send temperature and pressure information out of the biological environment. The RF carrier frequency is 174-216 MHz and a pair of RF bursts (pulses) is transmitted at a frequency of about 1-2 Hz. The transmission range is 3 to 10 feet, depending on the position of the transmitter in the body and its biological environment. The entire transmitter is encapsulated in biocompatible silicone rubber. Power is supplied by on-board silver-oxide batteries. The average power consumption of the current design is less than 30 microW, which yields a lifetime of approximately 6 - 9 months. Chip-on-Board technology (COB) drastically reduces the size of the printed circuit board from 38 x 28 mm to 22 x 8 mm. Unpackaged dies are flip-chip bonded directly onto the printed circuit board, along with surface mount resistors and capacitors. The invention can monitor additional physiological parameters including, but not limited to, ECG, blood gases, glucose, and ions such as calcium, potassium, and sodium.

Hines, John W.↗

Advanced sensor systems for biotelemetry

The present invention relates to telemetry-based sensing systems that continuously measures physical, chemical and biological parameters. More specifically, these sensing systems comprise a small, modular, low-power implantable biotelemetry system capable of continuously sensing physiological characteristics using implantable transmitters, a receiver, and a data acquisition system to analyze and record the transmitted signal over several months. The preferred embodiment is a preterm labor and fetal monitoring system. Key features of the invention include Pulse Interval Modulation (PIM) that is used to send temperature and pressure information out of the biological environment. The RF carrier frequency is 174-216 MHz and a pair of RF bursts (pulses) is transmitted at a frequency of about 1-2 Hz. The transmission range is 3 to 10 feet, depending on the position of the transmitter in the body and its biological environment. The entire transmitter is encapsulated in biocompatible silicone rubber. Power is supplied by on-board silver-oxide batteries. The average power consumption of the current design is less than 30 .mu.W., which yields a lifetime of approximately 6-9 months. Chip-on-Board technology (COB) drastically reduces the size of the printed circuit board from 38.times.28 mm to 22.times.8 mm. Unpackaged dies are flip-chip bonded directly onto the printed circuit board, along with surface mount resistors and capacitors. The invention can monitor additional physiological parameters including, but not limited to, ECG, blood gases, glucose, and ions such as calcium, potassium, and sodium.

Hines, John W.↗

Nanomaterials for Electronics and Optoelectronics

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Koehne, Jessica E.↗

Mo-Si-B-Based Coatings for Ceramic Base Substrates

Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

Perepezko, John Harry↗

Selective oxide-forming alloy, coating formed from and machine component including same

A selective oxide-forming alloy, a coating formed from, and a machine component including the coating are provided. The selective oxide-forming alloy includes between atomic percent and 26 atomic percent silicon (Si), between 21 atomic percent and 27 atomic percent titanium (Ti), between 30 atomic percent and 39 atomic percent aluminum (Al), between 2 atomic percent and 10 atomic percent hafnium (Hf), and a balance of niobium (Nb).

Holgate, Collin Scott↗

Orbiter Reinforced Carbon-Carbon Advanced Sealant Systems: Screening Tests

Oxidation protection for the Orbiter reinforced carbon-carbon (RCC consists of three components: silicon carbide coating, tetraethyl orthosilicate (TEOS) impregnated into the carbon substrate and a silicon based surface sealant (designated Type A). The Orbiter Type A sealant is being consumed each mission, which results in increased carbon-carbon substrate mass loss, which adversely impacts the mission life of the RCC components. In addition, the sealant loss in combination with launch pad contamination (salt deposit and zinc oxide) results in RCC pinholes. A sealant refurbishment schedule to maintain mission life and minimize affects of pin hole formation has been implemented in the Orbiter maintenance schedule. The objective of this investigation is to develop an advanced sealant system for the RCC that extends the refurbishment schedule by reducing sealant loss/pin hole formation and that can be applied to existing Orbiter RCC components. This paper presents the results of arc jet screening tests conducted on several sealants that are being considered for application to the Orbiter RCC.

Curry, Donald M.↗