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At least 937 records · Page 52

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DOE OSTI2023

Insulator-to-metal phase transition in a few-layered MoSe 2 field effect transistor

The metal-to-insulator phase transition (MIT) in low-dimensional materials and particularly two-dimensional layered semiconductors is exciting to explore due to the fact that it challenges the prediction that a two-dimensional system must be insulating at low temperatures. Thus, the exploration of MITs in 2D layered semiconductors expands the understanding of the underlying physics. Here we report the MIT of a few-layered MoSe 2 field effect transistor under a gate bias (electric field) applied perpendicular to the MoSe 2 layers. With low applied gate voltage, the conductivity as a function of temperature from 150 K to 4 K shows typical semiconducting to insulating character. Above a critical applied gate voltage, V c , the conductivity becomes metallic (i.e., the conductivity increases continuously as a function of decreasing temperature). Evidence of a metallic state was observed using an applied gate voltage or, equivalently, increasing the density of charge carriers within the 2D channel. We analyzed the nature of the phase transition using percolation theory, where conductivity scales with the density of charge carriers as σ ∝ (n - n c ) δ . The critical exponent for a percolative phase transition, δ(T), has values ranging from 1.34 (at T = 150 K) to 2 (T = 20 K), which is close to the theoretical value of 1.33 for percolation to occur. Thus we conclude that the MIT in few-layered MoSe 2 is driven by charge carrier percolation. Finally, the conductivity does not scale with temperature, which is a hallmark of a quantum critical phase transition.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2024

Oxygen redox activities governing high-voltage charging reversibility of Ni-rich layered cathodes

A schematic illustration indicative of the improved structural reversibility through stabilizing oxidized oxygen by Al doping. The chemical reactions and phase transitions at high voltages are generally considered to determine the electrochemical properties of high-voltage layered cathodes such as Ni-rich rhombohedral oxides. Even if significantly higher SOCs (states-of-charge) are utilized above the capability of transition metal redox (primarily Ni and Co), the effect of oxygen redox on Ni-rich rhombohedral oxides still looks mysterious thereby necessitating research that can clarify the relationship between redox reactions and phase transitions. Here, we performed a comprehensive and comparative study of the cationic and anionic redox reactions, as well as the structural evolution of a series of commercial Ni-rich layered oxides with and without Al doping. We combined the results from X-ray spectroscopy, operando electrochemical mass spectrometry, and neutron diffraction with electrochemical properties and thereby revealed the different oxygen redox activities associated with structural and electrochemical degradations. We reveal that Al doping suppresses the irreversible oxygen release but enhances the lattice oxygen oxidization. With this modulated oxygen redox activity, the Ni-rich layered oxides’ notorious H2–H3 structural phase transition becomes highly reversible. Our findings disentangle the different oxygen redox activities during high-voltage cycling and clarify the role of dopants in the Ni-rich layered oxides in terms of structural and electrochemical stability, shedding light on the future direction of optimizing layered cathode materials for safer high energy-density secondary batteries.

Lee, Gi-Hyeok↗

DOE OSTI2026

Uniformity, performance, and durability of roll-to-roll-coated iridium oxide electrolyzer catalyst layers

This work investigates the use of roll-to-roll coating methods for the production of iridium oxide catalyst layers for proton exchange membrane water electrolyzers. Catalyst layers were produced using two coating methods: slot die and gravure. By varying the solids content of the catalyst ink and coating process variables loadings between 0.08 and 0.64 mg Ir cm −2 were prepared with relatively high spatial uniformity. However, at loadings below 0.2 mg Ir cm −2 microscopy reveals voids in the catalyst layer due to similar length scales of catalyst agglomerates and overall layer thickness. Electrochemical testing shows that these voids do not impact initial membrane electrode assembly performance but lead to increased performance losses after potential cycling compared to spray coated catalyst layers.

08 HYDROGEN↗

DOE OSTI2021

Demystifying the Stern layer at a metal–electrolyte interface: Local dielectric constant, specific ion adsorption, and partial charge transfer

Electric double layer (EDL) represents one of the most basic concepts in electrochemistry and is pertinent to diverse engineering applications ranging from electrocatalysis to energy storage. Whereas phenomenological and coarse-grained models have been long established to describe ionic distributions in the diffuse layer, a faithful prediction of the physicochemical properties of the electrode–electrolyte interface from a molecular perspective remains a daunting challenge. In this work, we investigate the charging behavior of an Ag (111) electrode in NaF aqueous solutions leveraging experimental results and theoretical calculations based on the classical density functional theory for ion distributions in the diffuse layer and on the joint density functional theory (JDFT) for the electronic structure. When the Ag electrode is applied with a negative voltage, the surface charge density can be reasonably described by assuming a neutral Stern layer with the dielectric constant dependent on the local electric field as predicted by the Kirkwood equation. However, the specific adsorption of F− ions must be considered when the electrode is positively charged and the fluoride adsorption can be attributed to both physical and chemical interactions. Qualitatively, F− binding and partial charge transfer are supported by JDFT calculations, which predict an increased binding energy as the voltage increases. Our findings shed insight on the molecular characteristics of the Stern layer and the charge behavior of adsorbed species not specified by conventional EDL models.

Wang, Xuepeng (ORCID:0000000285704546)↗

DOE OSTI2022

Origin of layered perovskite device efficiencies revealed by multidimensional time-of-flight spectroscopy

Mixtures of layered perovskite quantum wells with different sizes form prototypical light-harvesting antenna structures in solution-processed films. Gradients in the bandgaps and energy levels are established by concentrating the smallest and largest quantum wells near opposing electrodes in photovoltaic devices. Whereas short-range energy and charge carrier funneling behaviors have been observed in layered perovskites, our recent work suggests that such light-harvesting processes do not assist long-range charge transport due to carrier trapping at interfaces between quantum wells and interstitial organic spacer molecules. Here, we apply a two-pulse time-of-flight technique to a family of layered perovskite systems to explore the effects that interstitial organic molecules have on charge carrier dynamics. In these experiments, the first laser pulse initiates carrier drift within the active layer of a photovoltaic device, whereas the second pulse probes the transient concentrations of photoexcited carriers as they approach the electrodes. The instantaneous drift velocities determined with this method suggest that the rates of trap-induced carrier deceleration increase with the concentrations of organic spacer cations. Overall, our experimental results and model calculations suggest that the layered perovskite device efficiencies primarily reflect the dynamics of carrier trapping at interfaces between quantum wells and interstitial organic phases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness

Wide-bandgap III-nitride heterostructures are required for a variety of device applications. However, this alloy system has a large lattice constant and thermal expansion coefficient mismatch that limits the alloy composition and layer thickness for many heteroepitaxial device structures. Consequently, various methods have been devised to allow the heteroepitaxial growth of AlInGaN heterostructures to accommodate this inherent strain. In this work, we describe a non-planar-growth approach that enables the deposition of crack-free high-Al-mole-fraction Al x Ga 1-x N on patterned GaN/sapphire templates and bulk GaN substrates with large-area mesas. We have studied the effects of the patterned mesa width, the mesa etch depth, and the gap between the mesas on the heteroepitaxy of Al x Ga 1-x N superlattices with an average Al molar fraction 0.11 < x¯ < 0.21 and non-planar overgrowth growth thicknesses up to 3.5 μm. Similar to the planar growth approach, increasing the thickness and Al mole fraction of the Al x Ga 1-x N superlattices leads to surface cracking when exceeding the critical layer thickness. However, limiting the mesa dimension in one direction enables strain mitigation and drastically increases the critical layer thickness. Additionally, larger etch depths of the mesas increase the Al alloy composition and thickness for crack-free AlGaN heteroepitaxy whereas the gap in between the mesas seems to have no crucial influence. We demonstrate that the Al alloy composition and layer thicknesses of such heterostructures can be increased far beyond the critical layer thickness for planar growth and demonstrate the growth of a crack-free full AlxGa 1-x N/GaN quantum-well laser heterostructure designed for operation at ~370 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

New scaling law for turbulent boundary layers with high surface mass transfer

A fundamental understanding of the phenomena occurring in the turbulent boundary layer in the presence of surface blowing is limited, and considerable disagreements persist even in describing primary quantities, such as the boundary layer profile. The theories based on the linear boundary layer equations show that the thickness of the sublayer increases in the presence of surface blowing; therefore, the viscous sublayer and law of the wall modify. In this study, direct numerical simulations (DNS) of turbulent boundary layers with uniform surface mass transfers are carried out in order to scale the velocity profile. Emphasis is placed on moderate to high mass transfer rates, which are relevant to the most common hybrid rockets configuration. DNS data are used to establish a functional law of the wall and a law of wake by means of the relation between the wall shear stress and surface mass transfer. Analysis of the mean kinetic energy budget shows that the magnitude of turbulent kinetic energy increases by surface mass transfer, and the production rate extends significantly in the inner layer as the injection rate increases. DNS data of various surface blowing are used to complete the closure of turbulence kinetic energy equation and develop an eddy viscosity model. The predicted turbulent kinetic energy and eddy viscosity agree with DNS data for moderate to high blowing rates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Shock tube experiments on the three-layer Richtmyer–Meshkov instability

Here, a vertical shock tube is used for experiments on the three-layer Richtmyer–Meshkov instability. Two closely spaced membrane-less interfaces are formed by the flow of two different sects of three gases: one with air above CO 2 above SF 6 and the other with helium above air above SF 6 . The lightest of the three gases enters the shock tube at the top of the driven section and flows downward. Conversely, the heaviest gas enters at the bottom of the shock tube and flows upward while the intermediate density gas enters at the middle through porous plates. All three gases are allowed to escape through holes at the layer location, leaving an approximately 30-mm layer of intermediate-density gas suspended between the lightest gas from above and the heaviest gas from below. A single-mode, two-dimensional initial perturbation is then imposed on the lower interface by oscillating the shock tube in the horizontal direction. The flow is visualized by seeding the intermediate gas with particles and illuminating it with a pulsed laser. Image sequences are then captured using high-speed video cameras. Perturbation amplitude measurements are made from the three-layer system and compared with measurements from 2, two-layer systems. It is observed that the presence of the upper, initially flat interface produces a decrease in growth of instability amplitude in the nonlinear phase over an equivalent single-interface configuration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Effects of structural defects on optical properties of In x Ga 1-x N layers and quantum wells

This review concentrates on the microstructure of In x Ga 1-x N layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In x Ga 1-x N, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ~10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm 2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In x Ga 1-x N layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In x Ga 1-x N, which are crucial alloys in the field of optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Modulating spin-valley relaxation in WSe 2 with variable thickness VOPc layers

Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDCs) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. Here, in this work, vanadyl phthalocyanine (VOPc) molecular layers are thermally evaporated on WSe 2 to explore the effect of molecular layer thickness on excited-state spin-valley polarization. The thinnest molecular layer supports an interfacial state which destroys the spin-valley polarization almost instantaneously, whereas a thicker molecular layer results in longer-lived spin-valley polarization than the WSe 2 monolayer alone. The mechanism appears to involve a tightly bound species at the molecule/TMDC interface that strengthens exchange interactions and is largely avoided in thicker VOPc layers that isolate electrons from WSe 2 holes.

2D materials↗

DOE OSTI2025

Shock tube simulations for the three-layer Richtmyer–Meshkov instability with single-mode and multimode perturbations

While the canonical two-component, single-mode Richtmyer–Meshkov instability (RMI) has been extensively studied, relatively less work has focused on the effects of an additional intermediate-density middle layer. This work investigates such three-material RMI configurations at two Atwood number scenarios using the ARES hydrodynamics code. After validation against previous experimental and computational studies, setups corresponding to recent three-layer shock tube experiments are simulated. Cases with both single-mode and multimode perturbations are studied to quantify mixing across the interface between the materials with highest and intermediate density. In particular, this work is able to comprehensibly examine differences between two- and three-dimensional setups for the single-mode and multimode problems. Observations from previous two-layer investigations still apply in the three-layer setup, but over the time horizons considered, there appears to be insufficient nonlinear mode coupling to create significant differences between two- and three-dimensional simulations following the first passage of a shock. Finally, additional reshock simulations have additional nonlinear growth that does result in expected differences between two- and three-dimensional cases in this three-layer setup, but significant differences do not manifest during the time horizon studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Sample glue layer investigation and mitigation for laser induced prompt impulse experiments

Understanding longer timescale material reactions under dynamic stress loading is critical for applications in materials engineering, shock physics, and planetary science. Prompt impulse experiments generate lower pressures since the ablator—the material first removed by the laser—is thicker and farther from the diagnostic plane, capturing aggregate material responses from the initial shock wave, rarefaction waves, and later time effects. This complexity demands thorough material characterization and simulation support. Since traditional sample construction is specific to supported shock experiments, designing prompt impulse experiments requires reconsideration around target design and sample engineering. Here, we present sample preparation techniques, experimental investigations, and theoretical simulations to investigate glue layer impacts, aiming to standardize samples for consistent data at lower laser fluences. We find that glue layers <30 μm have a minimal impact on peak velocity and pulse shape. The peak velocity scales linearly with glue layer thickness until a glue layer of 75 μm. For glue layers >75 μm, the peak velocity no longer scales with thickness; however, the pulse shape continues to degrade as described by simulations.

Lasers↗

DOE OSTI2026

Boundary-layer receptivity to oblique freestream vorticity waves for a high-enthalpy hypersonic flow

The receptivity of a Mach 15 straight-cone boundary layer to oblique freestream vorticity waves is investigated using direct numerical simulation (DNS) alongside linear stability theory and the linear parabolized stability equations. A thermochemical nonequilibrium gas model is used. Oblique freestream vorticity waves at frequencies of 400, 800, and 1200 kHz are considered, with incident angles ranging from 0° to 29.4° at 400 kHz, 0° to 15.7° at 800 kHz, and 0° to 20.6° at 1200 kHz. The 400 kHz case is of primary interest due to the strong second-mode amplification at this frequency. Although the underlying base flow is axisymmetric, the oblique vorticity waves lead to a fully three-dimensional boundary-layer disturbance whose characteristics vary depending on the azimuthal ray relative to the freestream wave. Moving downstream within the second-mode instability region, some clear trends emerge in terms of the boundary-layer disturbance amplitudes; that is, disturbance amplitudes are highest at the leeward ray (relative to the freestream wave), but weakest about halfway between the windward and leeward rays. Increasing the incident angle causes the amplitudes to increase on the leeward ray and decrease on the windward ray. Moreover, the boundary-layer disturbance throughout contains a wide spectrum of azimuthal wavenumbers in which the disturbance energy falls off at higher wavenumbers. Increasing the incident angle causes the azimuthal spectrum of the boundary-layer disturbance to broaden overall. Qualitatively similar results are found for the two higher frequencies leading up to the peak-amplitude locations corresponding to the second-mode instability.

42 ENGINEERING↗

DOE OSTI2020

Statistical Modeling and Analysis of k -Layer Coverage of Two-Dimensional Materials in Inkjet Printing Processes

Two-dimensional layered materials/flakes, also known as crystalline atom-thick layer nanosheets, have recently been receiving great attention in electronics fabrication due to their unique and intriguing properties. The k-layer coverage area (i.e., the area covered by k number of overlapping layers) of the printed flake pattern significantly impacts on the properties of the printed electronics. In this work, we constructed a statistical model to describe the k-layer coverage of randomly distributed two-dimensional materials. A series of results are obtained to provide not only the expectation but also the variance of the coverage area. The boundary effects on the random flakes coverage are also studied. In addition, an approximated statistical testing approach is also developed in this work to detect abnormal coverage patterns. Furthermore, the case studies based on simulated data and real flakes images obtained from the inkjet printing process demonstrate the accuracy and effectiveness of the proposed model and analysis methods.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Methanol carbonylation to acetaldehyde on Au particles supported by single-layer MoS 2 grown on silica

Homogenous single-layer MoS 2 films coated with sub-single layer amounts of gold are found to isolate the reaction of methanol with carbon monoxide, the fundamental step toward higher alcohols, from an array of possible surface reactions. Active surfaces were prepared from homogenous single-layer MoS 2 films coated with sub-single layer amounts of gold. These gold atoms formed clusters on the MoS2 surface. A gas mixture of carbon monoxide (CO) and methanol (CH 3 OH) was partially converted to acetaldehyde (CH 3 CHO) under mild process conditions (308 kPa and 393 K). This carbonylation of methanol to a C 2 species is a critical step toward the formation of higher alcohols. Density functional theory modeling of critical steps of the catalytic process identify a viable reaction pathway. Imaging and spectroscopic methods revealed that the single layer of MoS 2 facilitated formation of nanoscale gold islands, which appear to sinter through Ostwald ripening. Here, the formation of acetaldehyde by the catalytic carbonylation of methanol over supported gold clusters is an important step toward realizing controlled production of useful molecules from low carbon-count precursors.

2D catalyst↗

DOE OSTI2020

Effect of layer thickness on structural, morphological and superconducting properties of Nb 3 Sn films fabricated by multilayer sequential sputtering

Superconducting Nb3Sn films can be synthesized by controlling atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films where Sn composition of deposited films can be controlled by controlling the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates with ex-situ annealing at 950 °C for 3 h. We have investigated the effect of Nb and Sn layer thickness on the properties of Nb3Sn films. The thicknesses of Nb and Sn layers were varied in two ways: (1) varied Nb:Sn thickness ratio (1:1, 2:1, 3:1, 4:1), and (2) varied layer thickness of both Nb and Sn layers, while keeping constant Nb:Sn thickness ratio of 2:1. The crystal structure, surface morphology, topography, and film composition were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS) respectively. The results showed Sn loss from the surface due to evaporation during annealing. Superconducting Nb3Sn films of critical temperature up to 17.93 K have been achieved.

Sayeed, M. N.↗

DOE OSTI2023

How the birth and death of shear layers determine confinement evolution: from the L → H transition to the density limit

Electric field profile structure—especially its shear—is a natural order parameter for the edge plasma, and characterizes confinement regimes ranging from the H-mode (Wagner et al. 1982 Phys. Rev. Lett.49, 1408–1412 (doi:10.1103/PhysRevLett.49.1408)) to the density limit (DL) (Greenwald et al. 1988 Nucl. Fusion28, 2199–2207 (doi:10.1088/0029-5515/28/12/009)). The theoretical developments and lessons learned during 40 years of H-mode studies (Connor & Wilson 1999 Plasma Phys. Control. Fusion42, R1–R74 (doi:10.1088/0741-3335/42/1/201); Wagner 2007 Plasma Phys. Control. Fusion49, B1–B33 (doi:10.1088/0741-3335/49/12b/s01)) are applied to the shear layer collapse paradigm (Hong et al. 2017 Nucl. Fusion58, 016041 (doi:10.1088/1741-4326/aa9626)) for the onset of DL phenomena. Results from recent experiments on edge shear layers and DL phenomenology are summarized and discussed in the light of L → H transition physics. The theory of shear layer collapse is then developed. In this work, we demonstrate that shear layer physics captures both the well known current (Greenwald) scaling of the DL (Greenwald 2002 Plasma Phys. Control. Fusion44, R27–R53 (doi:10.1088/0741-3335/44/8/201); Greenwald et al. 2014 Phys. Plasmas21, 110501 (doi:10.1063/1.4901920)), as well as the emerging power scaling (Zanca, Sattin, JET Contributors 2019 Nucl. Fusion59, 126011 (doi:10.1088/1741-4326/ab3b31)). The derivation of the power scaling theory exploits an existing model, originally developed for the L → H transition (Diamond, Liang, Carreras, Terry 1994 Phys. Rev. Lett.72, 2565–2568 (doi:10.1103/PhysRevLett.72.2565); Kim & Diamond 2003 Phys. Rev. Lett.90, 185006 (doi:10.1103/PhysRevLett.90.185006)). We describe the enhanced particle transport events that occur following shear layer collapse. Open problems and future directions are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Structural stability, elemental ordering, and transport properties of layered ScTaN 2

Ternary transition metal (TM) nitrides have gained significant attention in thin film research due to their promising properties for a broad range of applications. Particularly, some of the ternary TM nitrides have been predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Unfortunately, synthesis of TM ternary nitride films by physical vapor deposition often favors disordered 3D structures rather than the predicted 2D-like layered structure. In this study, we investigate the structural interplay in the Sc-Ta-N ternary system using a combinatorial approach. Combinatorial libraries S⁢c 𝑥 ⁢T⁢a 1−𝑥 ⁢N are synthesized following a two-step method: First, deposit film precursors by cosputtering and then process the resulting 3D-structured samples with rapid thermal annealing. Synchrotron grazing-incidence wide-angle x-ray scattering on films annealed at 1200 ⁢°⁢C for 20 min leads to the nucleation of ScTaN 2 layered structure (𝑃⁢6 3 /𝑚⁢𝑚⁢𝑐) near stoichiometry. We find that the layered structure can accommodate large off-stoichiometry in the Ta-rich region (𝑥 < 0.5), facilitated by the alloying with quasi-isostructural Ta 5 ⁢N 6 compound that exists on a composition tie line at 𝑥 = 0. While focusing on ScTaN 2 , we estimate the long-range order parameter in near-stoichiometric films to be 0.86, corresponding to a fraction of Sc/Ta antisites of 7%. Transport measurements on ScTaN 2 reveal a nearly temperature-independent high carrier density (10 21 c⁢m −3 ), suggesting a heavily doped semiconductor or semimetallic character, consistent with a small positive Seebeck coefficient of +19 µV/K. The carrier mobility at 2 K is relatively small (9.5c⁢m 2 V −1 s −1 ) and the residual-resistivity ratio is minor, suggesting that electrical conduction is dominated by defects or disorder. Measured magnetoresistance suggests possible weak antilocalization at 2 K. This paper highlights the interplay between ScTaN 2 and Ta 5 ⁢N 6 crystal structures in stabilizing layered materials, emphasizes the importance of cation order/disorder for potential tunable alloys, and suggests that ScTaN 2 is a promising platform for exploring electronic properties.

36 MATERIALS SCIENCE↗