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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Techno-Economic Analysis of Dynamic Building Envelopes Comprising Phase Change Materials and Switchable Insulations

Integrating phase change materials (PCMs) in building envelopes is a recognized technique to reduce the space heating/cooling loads and provide load shedding and shifting capacity. However, PCM benefits have been found to reduce dramatically with increase in the insulation requirements. Dynamic building envelopes that can alter their thermal resistance based on the indoor and outdoor conditions can effectively harness free ambient heating/cooling, thereby greatly enhancing the benefits of the PCM-integrated envelope in managing thermal loads. In this study, we examine various combinations of PCMs and switchable insulations and compare their combined impact on heat flow through the building envelope. Using numerical analysis, we investigate the PCM- and switchable insulation-integrated building walls, calculate the potential energy saving benefits compared to the conventional static walls, and finally perform techno-economic analysis to estimate the acceptable cost of the technology under various payback period scenarios.

dynamic building envelopes↗
DOE OSTI2024

Topological Spin Textures in an Insulating van der Waals Ferromagnet

Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr 3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Néel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tracking of Nuclear Cable Insulation Polymer Structural Changes using the Gel Fraction and Uptake Factor Method

Cross-linked polyethylene (XLPE) cable insulation samples were exposed to heat and gamma radiation at a series of temperatures, dose rates, and exposure times to evaluate the effects of these variables on material degradation. The samples were tested using the solvent incubation method to collect gel fraction and uptake factor data in order to assess the crosslinking and chain scission occurring in polymer samples with aging. Consistent with previous reports, gel fraction values were observed to increase and uptake factor values to decrease with radiation and thermal exposure. The trends seen were also more prominent as exposure time increased, suggesting this to be a viable method of tracking structural changes in the XLPE-insulated cable material over extended periods. For the conditions explored, the cable insulation material evaluated did not indicate signs of anomalous aging such as inverse temperature effect in which radiation-induced aging is more severe at lower temperature. Ongoing aging under identical radiation conditions and at lower temperature will further inform conclusions regarding the importance of inverse temperature effects for this material under these conditions.

cable aging↗
DOE OSTI2017

Influence of Insulation Monitoring Devices on the Operation of DC Control Circuits

The insulation level of DC control circuits is an important safety-critical factor and, thus, should be subject to continuous and periodic monitoring. The methods used for monitoring the insulation in live circuits may, however, disturb the reliable operation of control relays. The risks of misoperation and failure to reset of relays posed by the operation of various insulation monitoring and fault location systems are evaluated.

42 ENGINEERING↗
DOE OSTI2018

Revival of Metal-Insulator and Ferromagnetic-Paramagnetic Transitions by Ni Substitution at Mn Site in Charge-Ordered Monovalent Doped Nd{sub 0.75}Na{sub 0.25}MnO{sub 3} Manganites

Nd{sub 0.75}Na{sub 0.25}Mn{sub 1−x}Ni{sub x}O{sub 3} (x = 0 − 0.07) were synthesized using a conventional solid-state synthesis method to investigate the effect of Ni substitution on their magnetic and electrical transport properties. XRD analysis using the Rietvield refinement method showed an increase in unit cell volume with increasing Ni content, indicating the possibility of substituting Ni for the Mn site. For x = 0, magnetization measurements showed paramagnetic (PM) to antiferromagnetic (AFM) transition at the transition temperature, T{sub N} ∼ 185 K, which may be related to the presence of charge-ordering (CO) state. For Ni-substituted samples, ferromagnetic (FM) to PM transition was induced with Curie temperature (T{sub C}), increasing from 91 K (x = 0.01) to 115 K (x = 0.03), followed by decreases in T{sub C} to 60 K (x = 0.07). Electrical resistivity measurements showed that samples for x ≤ 0.01 exhibited insulator behavior while both x = 0.03 and 0.05 samples exhibited metal-insulator transition suggesting that the CO state is weakened. For x = 0.07, the sample shows re-entrant of insulating characteristic. Inducement of FM metallic (FMM) state, as well as increased of T{sub C} for x = 0.03 is suggested to be related to FM SE between Ni{sup 2+} and Mn{sup 4+}, which suppressed the CO state, hence inducing double-exchange (DE)-like mechanism. In addition, an increase in resistivity was observed as temperature decreased below the resistivity minimum (R{sub min}) at T{sub min} ∼ 40 K for x = 0.05 is possibly due to the Kondo-like effect mechanism. On one hand, the M(H) curve showed the presence of a hysteresis loop for x = 0 and 0.01 at T= 60 and 80 K, indicating the presence of an unstable phase, which may be related with the CO-AFM phase. For x = 0.03, no hysteresis loop was observed, indicating the suppression of the CO-AFM. Intriguingly, for x = 0.05 and 0.07, small hysteresis loop was observed, indicating the possible presence of a minor AFM component. Further, the observed MR behavior in present studies can be understood as a result of a decreased scattering mechanism in the presence of magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Heterostructures Based on Magnetic and Topological Insulators

Using ab initio calculations, an investigation of the electronic structure of the magnetic insulator/topological insulator heterostructures is performed. Bismuth selenide is used as a topological insulator and monolayers of vanadium-based van der Waals materials VSe{sub 2} and VBi{sub 2}Se{sub 4} – as magnetic materials. The formation of the latter one is possible via diffusion of the deposited vanadium and selenium atoms into the surface block of the layered Bi{sub 2}Se{sub 3}. A comparison of the electronic structure of the two heterostructures is performed and peculiar features of interaction of the Dirac state of the topological insulator with the magnetic states of vanadium are revealed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

For the first time, the use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass, SON68, and layered hole-perovskite oxide thin films were selected as model systems due to their fundamental and practical significance. Our study shows that if the size of analysis areas is same, the highest sputter rate of argon cluster sputtering can be 2-3 times faster than the highest sputter rates of oxygen or cesium sputtering. More importantly, high quality data and high sputter rates can be achieved simultaneously for argon cluster sputtering while this is not the case for cesium and oxygen sputtering. Therefore, for deep depth profiling of insulating samples, the measurement efficiency of argon cluster sputtering can be about 6-15 times better than traditional cesium and oxygen sputtering. Moreover, for a SrTiO3/SrCrO3 bi-layer thin film on a SrTiO3 substrate, the true 18O/16O isotopic distribution at the interface is better revealed when using the argon cluster sputtering source. Therefore, the implementation of an argon cluster sputtering source can significantly improve the measurement efficiency of insulating materials, and thus can expand the application of ToF-SIMS to the study of glass corrosion, perovskite oxide thin films, and many other potential systems.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2017

Cast-in-place, ambiently-dried, silica-based, high-temperature insulation

A novel sol-gel chemistry approach was developed to enable the simple integration of a cast-in-place, ambiently-dried insulation into high temperature applications. The insulation was silica based, synthesized using methyltrimethoxysilane (MTMS) as the precursor. MTMS created a unique silica microstructure that was mechanically robust, macroporous, and superhydrophobic. To allow for casting into and around small, orthogonal features, zirconia fibers were added to increase stiffness and minimize contraction that could otherwise cause cracking during drying. Radiative heat transport was reduced by adding titania powder as an opacifier. To assess relevance to high temperature thermoelectric generator technology, a comprehensive set of materials characterizations were conducted. The silica gel was thermally stable, retained superhydrophobicity with a water contact angle > 150° , and showed a high electrical resistance > 1 GΩ, regardless of heating temperature (up to 600 °C in Ar for 4 h). In addition, it exhibited a Young's modulus ~3.7 MPa in room temperature and a low thermal conductivity < 0.08 W/m.K before and after heat treatment. Thus, based on the simplicity of the manufacturing process and optimized material properties, we believe this technology can act as an effective cast-in-place thermal insulation (CTI) for thermoelectric generators and myriad other applications requiring improved thermal efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Topological Hall effect in magnetic topological insulator films

Geometric Berry phase can be induced either by spin–orbit coupling, giving rise to the anomalous Hall effect in ferromagnetic materials, or by chiral spin texture, such as skyrmions, leading to the topological Hall effect. Recent experiments have revealed that both phenomena can occur in topological insulator films with magnetic doping, thus providing us with an intriguing platform to study the interplay between these two phenomena. In this work, we report on a numerical simulation of the anomalous Hall and topological Hall effects in a four-band model that can properly describe the quantum well states in the magnetic topological insulator films by combining Landauer–Büttiker formula and the iterative Green’s function method. Our numerical results suggest that spin–orbit coupling in this model plays a different role in the quantum transport in the clean and disordered limits. In the clean limit, spin–orbit coupling mainly influences the longitudinal transport but does not have much effect on topological Hall conductance. In the disordered limit, the longitudinal transport is determined by disorder scattering and spin–orbit coupling is found to affect strongly the topological Hall conductance. Here, this sharp contrast unveils a dramatic interplay between spin–orbit coupling and disorder effect in topological Hall effect in magnetic topological insulator systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Large linear magnetoresistance in topological crystalline insulator Pb{sub 0.6}Sn{sub 0.4}Te

Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation of the carrier mobility.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Iridate Li8IrO 6 : An Antiferromagnetic Insulator

In this work, a polycrystalline iridate Li 8 IrO 6 material was prepared via heating Li 2 O and IrO 2 starting materials in a sealed quartz tube at 650 °C for 48 h. The structure was determined from Rietveld refinement of room-temperature powder neutron diffraction data. Li 8 IrO 6 adopts the nonpolar space group $R\bar{3}$ with Li atoms occupying the tetrahedral and octahedral sites, which is supported by the electron diffraction and solid-state 7Li NMR. This results in a crystal structure consisting of LiO 4 tetrahedral layers alternating with mixed IrO 6 and LiO 6 octahedral layers along the crystallographic c -axis. The +4 oxidation state of Ir 4+ was confirmed by near-edge X-ray absorption spectroscopy. An in situ synchrotron X-ray diffraction study of Li 8 IrO 6 indicates that the sample is stable up to 1000 °C and exhibits no structural transitions. Magnetic measurements suggest long-range antiferromagnetic ordering with a Néel temperature (TN) of 4 K, which is corroborated by heat capacity measurements. The localized effective moment $μ_{\text{eff}}$ (Ir) = 1.73 $μ_{\text{B}}$ and insulating character indicate that Li 8 IrO 6 is a correlated insulator. First-principles calculations support the nonpolar crystal structure and reveal the insulating behavior both in paramagnetic and antiferromagnetic states.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Preferential Direction of Electron Transfers at a Dye–Metal Oxide Interface with an Insulating Fluorinated Self-Assembled Monolayer and MgO

Slowing non-desirable electron transfer reactions at metal oxide-dye interfaces is important for many technologies. Specifically, after an interfacial photoinduced charge separation event at a metal oxide-dye interface, it is critically important to limit the rate of electron transfer reactions back to sensitizers and to limit electron transfer reactions between the electrolyte and the metal oxide. Ruthenium-based dyes at metal oxide interfaces are widely used in many fields; however, these dyes often have poor surface insulation resulting in fast recombination kinetics with transition metal-based redox shuttles in an electrolyte. This work explores two semiconductor surface modification strategies designed to minimize recombination events of electrons in TiO 2 with oxidized redox shuttles using a fluorinated siloxane insulator (PFTS) and a metal oxide insulator (MgO) with a well-known Ru dye, B11. Additionally, the influence of these treatments on the rate and duration of photoinduced interfacial charge separation at the TiO 2 -dye interface was examined. The TiO 2 -dye-redox shuttle systems were studied via dye-sensitized solar cell current-voltage curve, incident photon-to-current conversion efficiency, small-modulated photovoltage transient, time-correlated single photon counting, and transient absorption spectroscopy measurements. MgO was found to decrease the rate of the electron transfer reaction from the metal oxide to the electrolyte, decrease the rate of the electron transfer reaction to the oxidized dye from TiO 2 , increase the electron transfer reaction rate from a reduced redox shuttle to an oxidized dye, and decrease the electron injection rate from the photoexcited dye to TiO2. Interestingly, PFTS was found to desirably improve on these rates relative to MgO or untreated TiO 2 . Here, a model based on electrostatic interactions is presented to explain the exceptional behavior of PFTS with DFT computational analysis of PFTS supporting this model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI 3 , CrBr 3 , and CrCl 3 ). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI 3 layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.

2D magnet↗
DOE OSTI2016

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Engineering three-dimensional topological insulators in Rashba-type spin-orbit coupled heterostructures

Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface. The discoveries of these states have sparked the hope of realizing non-trivial excitations and novel effects such as a magnetoelectric effect and topological Majorana excitations. Here we develop a theoretical formalism to show that a three-dimensional topological insulator can be designed artificially via stacking bilayers of two-dimensional Fermi gases with opposite Rashba-type spin-orbit coupling on adjacent layers, and with interlayer quantum tunneling. We demonstrate that in the stack of bilayers grown along a (001)-direction, a non-trivial topological phase transition occurs above a critical number of Rashba bilayers. In the topological phase, we find the formation of a single spin-polarized Dirac cone at the G-point. This approach offers an accessible way to design artificial topological insulators in a set up that takes full advantage of the atomic layer deposition approach. This design principle is tunable and also allows us to bypass limitations imposed by bulk crystal geometry.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Metal-to-insulator switching in quantum anomalous Hall states

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12 Bi 0.26 Sb 0.62 ) 2 Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

36 MATERIALS SCIENCE↗