Microelectronic Structure and Doping Nonuniformity of Phosphorus-Doped CdSeTe Solar Cells
Not Available
14 SOLAR ENERGY↗
SEARCH · Engineering Papers
Results for “Electrical resistivity”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Increasing the Electrolyte Salinity to Improve the Performance of Anion Exchange Membrane Water Electrolyzers
Direct operation of anion exchange membrane water electrolyzers (AEMWEs) with near-neutral pH feeds avoids the use of highly alkaline and corrosive solutions. However, using neutral pH solutions currently faces fundamental operational challenges that diminish performance and reduce long-term stability due to poor solution conductivity and low hydroxide ion concentration. Here, we showed that amending near-neutral pH solutions with low concentrations of alkali metal salts in a dry-cathode configuration substantially improved performance and stability. Adding NaClO 4 (10 mM) to the anolyte reduced the operating voltage by 0.19 to 2.58 V at 500 mA/cm 2 compared to non-saline solutions (2.77 V). However, further increases in the feed salt concentration (100 mM NaClO 4 ) reduced performance (2.64 V) due to a greater co-ion diffusion through the anion exchange membrane. Electrolyzer performance was further improved by utilizing salts with high conductivity such as KNO 3 . Using a saline anolyte reduced ohmic resistance, resulting in smaller applied voltage and energy consumption for hydrogen generation, while the combined effect of the membrane charge and the electric field direction in the dry-cathode feed configuration minimized ion crossover. Thus, increasing the salinity of near-neutral pH solutions represents a cost-effective strategy to improve the performance of AEMWE compared to ultrapure electrolytes, minimizing risks and costs associated with recirculating highly alkaline solutions.
anion exchange membrane water electrolyzer↗
Imaging the Meissner effect in hydride superconductors using quantum sensors
By directly altering microscopic interactions, pressure provides a powerful tuning knob for the exploration of condensed phases and geophysical phenomena. Here, the megabar regime represents an interesting frontier, in which recent discoveries include high-temperature superconductors, as well as structural and valence phase transitions. However, at such high pressures, many conventional measurement techniques fail. Here we demonstrate the ability to perform local magnetometry inside a diamond anvil cell with sub-micron spatial resolution at megabar pressures. Our approach uses a shallow layer of nitrogen-vacancy colour centres implanted directly within the anvil; crucially, we choose a crystal cut compatible with the intrinsic symmetries of the nitrogen-vacancy centre to enable functionality at megabar pressures. We apply our technique to characterize a recently discovered hydride superconductor, CeH 9 . By performing simultaneous magnetometry and electrical transport measurements, we observe the dual signatures of superconductivity: diamagnetism characteristic of the Meissner effect and a sharp drop of the resistance to near zero. By locally mapping both the diamagnetic response and flux trapping, we directly image the geometry of superconducting regions, showing marked inhomogeneities at the micron scale. Our work brings quantum sensing to the megabar frontier and enables the closed-loop optimization of superhydride materials synthesis.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Use of hydrodynamic theory to estimate electrical current redistribution in metals
Using the analogy between hydrodynamic and electrical current flow, we study herein how electrical current density j redistributes and amplifies due to two commonly encountered inhomogeneities in metals. First, we consider flow around a spherical resistive inclusion and find significant j amplification, independent of inclusion size. Hence, even μ m-scale inclusions can affect performance in applications by creating localized regions of enhanced Joule heating. Next, we investigate j redistribution due to surface roughness, idealized as a sinusoidal perturbation with amplitude A and wavelength λ . Theory predicts that j amplification is determined by the ratio A / λ , so that even “smooth” surface finishes (i.e., small A ) can generate significant amplification, if λ is correspondingly small. We compare theory with magnetohydrodynamic simulation to illustrate both the utility and limitations of the steady-state theory.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Unusual phase boundary of the magnetic-field-tuned valence transition in CeOs 4 Sb 12
Not Available
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electron transport through antiferromagnetic spin textures and skyrmions in a magnetic tunnel junction
An ideal layered $\hat{x}$-polarized antiferromagnet (AFM) between two antialigned $±\hat{z}$ polarized ferromagnetic (FM) contacts transmits no current due to a π phase difference of the matrix elements coupling the spin degenerate states to the two FM contacts. Inserting a normal-metal layer or tunnel barrier layer between one FM contact and the AFM alters this phase difference, and due to the unequal weighting of the two spins at the interface, it also breaks the spin degeneracy of the two AFM states. Further, the broken symmetry of the matrix elements combined with the broken degeneracy of the AFM states results in a Fano resonance in the transmission and a turn-on of the $T_{↑,↓}$ transmission channel. Such a magnetic tunnel junction geometry with two antialigned $±\hat{z}$ FM contacts can electrically detect an AFM skyrmion. The AFM skyrmion serves as an analog of the oblique polarizer in the triple-polarizer experiment. Resistances and resistance ratios are calculated and compared for FM and AFM skyrmions in a magnetic tunnel junction.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Experimental evidence that zinc impurities pin pair-density-wave order in La 2-x Ba x CuO 4
Both Zn doping and c-axis magnetic fields have been observed to increase the spin stripe order in La 2-x Ba x CuO 4 with x close to 1/8. For x = 0.095, the applied magnetic field also causes superconducting layers to decouple, presumably by favoring pair-density-wave order that consequently frustrates interlayer Josephson coupling. Here we show that introducing 1% Zn also leads to an initial onset of two-dimensional (2D) superconductivity, followed by 3D superconductivity at lower temperatures, even in zero field. Overall, we infer that the Zn pins pair-density-wave order locally, establishing the generality of such behavior.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Understanding limits to mobility in ultrahigh-mobility GaAs two-dimensional electron systems: 100 million cm 2 / Vs and beyond
Not provided.
36 MATERIALS SCIENCE↗
Superconductivity in the Parent Infinite-Layer Nickelate NdNiO 2
We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO 2 . A combination of oxide molecular beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples with a variety of techniques, including electrical transport, scanning transmission electron microscopy, x-ray absorption spectroscopy, and resonant inelastic x-ray scattering, to investigate the possible origins of superconductivity. We propose that superconductivity could be intrinsic to the undoped infinite-layer nickelates but suppressed by disorder due to a possibly sign-changing order parameter, a finding which would necessitate a reconsideration of the nickelate phase diagram. Another possible hypothesis is that the parent materials can be hole doped from randomly dispersed apical oxygen atoms, which would suggest an alternative pathway for achieving superconductivity. Published by the American Physical Society 2025
36 MATERIALS SCIENCE↗
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.
42 ENGINEERING↗
Giant electric field-induced second harmonic generation in polar skyrmions
Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V −1 and ~664% V −1 , respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>10 10 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.
Nonlinear optics↗
Sm 2 Ru 3 Sn 5 : A Noncentrosymmetric Cubic Member of the Ln 2 M 3 X 5 Family
An optimized synthetic method is presented for Sm 2 Ru 3 Sn 5 and investigate its physical properties and electronic structure. Sm 2 Ru 3 Sn 5 is prepared by arc-melting stoichiometric ratios of the elements and is confirmed by single crystal and powder X-ray diffraction. An antiferromagnetic transition is observed at T N = 3.8 K. A modified Curie-Weiss fit to the data in the range 50–150 K yields a Curie-Weiss temperature: θ CW = −36.6 K and an effective magnetic moment: μ eff = 0.83 μ B , in agreement with a Sm 3+ oxidation state. Field-dependent magnetization up to H = 7 T at 2 K shows a maximum response of 0.06 μ B , which is significantly lower than the expected Sm 3+ saturation moment (0.71 μ B ). Resistivity measurements indicate metallic behavior, and analysis of the magnetic entropy from the heat capacity reveals a doublet ground state due to crystal electric field splitting. The electronic structure and density of states are calculated with density function theory and further supported by the local density approximation with dynamical mean-field theory. Finally, the experimental and computational results highlight localized Sm 3+ moments and suggest a possible interplay between Ruddelman–Kitel–Kasuya–Yosida and Kondo interactions, positioning Sm 2 Ru 3 Sn 5 as a promising material for studying topology and complex physical phenomena.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
An interface-controlled Mott memristor in α -RuCl 3
Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl 3 . The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.
Physics↗
Dynamic, hollow nanotubular networks with superadjustable pH-responsive and temperature resistant rheological characteristics
Recently, the interest in stimuli-responsive and adaptable materials has continuously grown in various fields and applications. For such responsive systems, different triggers, including pH, light, pressure, temperature, and electric field, have been utilized to control dynamics and assembly. Among these, pH is one of the most convenient, energy-efficient, and economic modalities. Besides, plenty of traditional materials have poor thermal and salt stability, limiting their applications. Herein, we report a new design of a pH-responsive viscoelastic supramolecular complex (VSC) based on commplexation of a new long-chain amino-amide and maleic acid. In this study, the system demonstrated a sol–gel-sol transition from pH 2 to 10, with the largest static viscosity occurring at pH 6 (~1000 Pa·s) and the smallest viscosity at pH 4 (~3.3 Pa·s), indicating ~ 300-fold control over the viscosity. For a given concentration, the static viscosity of VSC was about 15 times larger than that of CTAB/NaSal, a well-established dynamic viscoelastic system, and no pH-responsiveness was observed for the traditional system. In addition, the VSC demonstrated a superior temperature tolerance and lower temperature dependence. The potential of these intriguing dynamics viscoelastic systems was evaluated for hydraulic fracturing and enhanced oil recovery applications. Proppant settling velocity of DMAA/MA was 500 ~ 1000 times lower than that of CTAB/NaSal and common traditional polymers. Likewise, the oil recovery percentage could be significantly improved with the utilization of DMAA/MA compared to the CTAB/NaSal (86 % vs 52 %). Aside from applications in hydraulic fracturing and enhanced oil recovery, we anticipate that the intriguing rheological properties of this viscoelastic system can be beneficial for other chemical engineering applications including personal care products, cosmetics, lubricants, and biomedical gels.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Multi-core high-temperature, irradiation-resistant thermocouple, and related methods
A multi-core thermocouple includes a plurality of wires, an insulation core surrounding the plurality of wires, a sheath surrounding the insulation core, and a plurality of electrical junctions. The plurality of electrical junctions may include a first electrical junction formed between a first wire of the plurality of wires and the sheath at a first axial mid-section of the multi-core thermocouple, the first electrical junction including a first swaged axial mid-section of the sheath and a second electrical junction formed between a second wire of the plurality of wires and the sheath at a second, different axial mid-section of the multi-core thermocouple, the second electrical junction including a second swaged axial mid-section of the sheath.
Skifton, Richard S.↗
Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)
4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.
42 ENGINEERING↗
Low thermal budget dopant activation in shallow junctions of implanted Si via Tunable plasma enhanced annealing
Low thermal budget (LTB) annealing has become increasingly critical for shallow junctions as semiconductor devices are scaled down. Plasma Enhanced Annealing (PEA) has emerged as a promising LTB annealing process, however its mechanisms remain unclear. In this study, arsenic and boron implanted silicon wafers were subjected to helium or argon ion bombardment generated by annealing plasmas under controlled ion energies and doses in a home-built annealing reactor. The structural and electrical changes were characterized by four-point probe measurements, secondary ion mass spectrometry, Raman spectroscopy and spectroscopic ellipsometry. A pronounced reduction in sheet resistance, accompanied by a decrease in the damage layer thickness demonstrates the surface selective annealing capability of PEA process. Comparative studies using He and Ar plasmas and related ion bombardment reveal a dependence of activation efficacy on both ion species and the dopant implantation profile. Furthermore, a multi-step annealing mechanism is proposed, consisting of an initial (low dose) structural recovery stage followed by the generation of “extended” defects and concluded at large doses by an enhanced dopant activation. The proposed annealing kinetics are thought to be controlled by ion flux, dose and energy. Finally, these results highlight PEA as an effective, surface-selective, LTB approach for shallow-dopant activation and near surface annealing, and provide mechanistic insights into PEA processes.
dopant activation↗