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At least 937 records · Page 52

Evolution of dislocation loops in irradiated α-Uranium: An atomistically-informed cluster dynamics investigation

An atomistically-informed mean field cluster dynamics model has been developed to investigate the nucleation and growth of prismatic loops in irradiated a-Uranium. TEM analysis of neutron irradiated a-Uranium shows the evolution of self-interstitial atom and vacancy loops on (010) and (100) crystallographic planes, respectively, resulting in an anisotropic lattice swelling of its face-centered orthorhombic crystal. To provide model parameters, the crystallography of loops and the binding energy of point defects to these loops were studied using an angular dependent EAM potential and classical molecular dynamics (MD) simulations. Furthermore, using the bond-boost hyperdynamics method, the anisotropic diffusion of interstitials and vacancies in a-Uranium was investigated. Here, the mechanisms of point defect diffusion and the associated migration energies were reported and compared with previous DFT studies. The energetics and kinetic quantities mentioned above were used in the cluster dynamics model to predict the cluster density as a function of dose rate, dose and temperature and the results were compared to the reported neutron irradiation experiments. The model predictions reveal an accumulation of small sized vacancy loops along with a population of large and growing self-interstitial loops, which closely corresponds to the TEM observations.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Electron tomography of dislocation structures

Recent developments in the application of electron tomography for characterizing microstructures in crystalline solids are described. The underlying principles for electron tomography are presented in the context of typical challenges in adapting the technique to crystalline systems and in using diffraction contrast imaging conditions. Methods for overcoming the limitations associated with the angular range, the number of acquired images, and uniformity of image contrast are introduced. In addition, a method for incorporating the real space coordinate system into the tomogram is presented. As the approach emphasizes development of experimental solutions to the challenges, the solutions developed and implemented are presented in the form of examples.

36 MATERIALS SCIENCE↗

Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires

Amplified spontaneous emission (ASE) at 456 nm from In{sub 0.2}Ga{sub 0.8}N nanowires grown on (001) silicon by catalyst-free molecular beam epitaxy was observed at room temperature under femtosecond excitation. The photoluminescence spectra below ASE threshold consist of two spontaneous emission bands centered at {approx}555 nm and {approx}480 nm, respectively, revealing the co-existence of deeply and shallowly localized exciton states in the nanowires. The ASE peak emerges from the 480 nm spontaneous emission band when the excitation density exceeds {approx}120 {mu}J/cm{sup 2}, indicating that optical gain arises from the radiative recombination of shallowly localized excitons in the nanowires. Time-resolved photoluminescence measurements revealed that the ASE process completes within 1.5 ps, suggesting a remarkably high stimulated emission recombination rate in one-dimensional InGaN nanowires.

77 NANOSCIENCE AND NANOTECHNOLOGY↗