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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Frequency Response Analysis to Monitor and Identify Changes in the Impedance of a Photovoltaic Panel Measured Online using a Power Optimizer

Photovoltaic (PV) cells are generally modeled as a current source due to photocurrent, p-n junction diodes with parasitic resistance, capacitance, and inductance. This paper proposes online frequency response analysis (FRA) to measure the impedance of a PV panel using an existing panel-level power optimizer in a PV system. The algorithm will actively perturb a small signal into a 300 W rooftop PV panel and compute its small signal impedance. The technology discussed is easy to incorporate, requires no additional hardware, doesn't alter the stability of the system, and is implemented at a steady-state point. The power optimizer initially stabilizes at an operating point and then perturbs the PV current via FRA and computes PV panel impedance. The relative standard deviation test conducted indoors under 300 W/m 2 illumination on a PV panel shows a less than 5% error rate in PV panel impedance magnitude and phase is measured using a power optimizer.

14 SOLAR ENERGY↗
DOE OSTI2023

Isolated Single-stage Three-phase AC/DC Converter using Bidirectional Switches

The advent of the SiC Bidirectional FET (BiDFET), a monolithic 1.2 kV bidirectional switch, has rendered the single-stage three-phase AC/DC converter topology a promising approach for implementing AC/DC converters. This topology, which integrates a full-bridge converter with a single-phase to three-phase matrix converter via a high-frequency transformer, is particularly suitable for applications requiring galvanic isolation, buck-boost functionality, and bidirectional power flow. The single-stage design eliminates the need for bulky and unreliable electrolytic capacitors, and utilizes a single magnetic component for power transfer. In the matrix converter, bidirectional switches, which were traditionally implemented using combinations of multiple semiconductor devices such as MOSFETs, IGBTs, and diodes, can now be realized using the single-chip solution, BiDFET. This advancement leads to a lower switch count, compact converter implementation, with lower inductance commutation cells, thereby enhancing the overall efficiency and compactness of the system. The paper presents a unified model of the converter, considering all control parameters, including the duty cycles and phase shift of transformer voltages. Detailed expressions for power transfer, transformer currents, and currents at AC and DC ports are provided. Additionally, the paper outlines the conditions necessary for soft-switching of all switches and the commutation schemes required for the practical implementation of the matrix converter modulation scheme. A hardware prototype of a 10 kW, 480 VRMS, LL/ 800 V AC/DC system has been developed, and experimental results are presented to demonstrate its performance.

BiDFET↗
DOE OSTI2021

System-on-Chip approach microwave diagnostics development for burning plasma

System-on-chip (SoC) millimeter wave integrated circuit technology has been developed and employed in chip heterodyne radiometers in Electron Cyclotron Emission Imaging (ECEI) and Microwave Imaging Reflectometer (MIR) on the DIII-D tokamak for 2D electron temperature and density fluctuation diagnostics. The W-band (75-110 GHz) ECEI system has been employed with 20 poloidal horn receiver modules with customized monolithic integrated circuit chips and internal local oscillator coupling path. The new SoC approach demonstrates > 30 dB additional gain on the receiver and 95% electronics noise suppression compared to the previous Schottky diode mixer array . An F-band (110-140 GHz) receiver chip has been developed to measure MHD and turbulence behavior on the DIII-D high-field side, such as Alfven eigenmodes. Furthermore, it can image pedestal structure evolution on fusion facilities with stronger magnetic fields, such as ASDEX-U, EAST, HL-2M, and LHD. The F-band chip performance has been tested in the laboratory. Also, V-band (55-75 GHz) transmitter and receiver modules (55-75 GHz) have been developed for DIII-D and NSTX-U Furthermore, microwave Imaging Reflectometer (MIR) application suitability for 2D density fluctuation imaging on the pedestal region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Qin, Yuan↗
DOE OSTI2023

Grid-Tied PV Inverter with Oversized Power Module to Increase its Low-Voltage Ride Through (LVRT) Capabilities and VAR Support

This paper proposes a novel design for grid-tied 3-ph Photovoltaic (PV) inverter to improve its low-voltage ride through (LVRT) response while significantly increasing its voltampere reactive (VAR) support during voltage sags. The literature available on LVRT for PV inverters can be grouped in solutions that dissipate the excess energy and those that temporary stores this energy. This paper proposes a third solution; oversizing inverter hardware components to safely transferring all the energy excess back to while maintaining the semiconductor under the maximum temperature limits. The advantages of the proposed approach are: 1) Improved LVRT capabilities and stable dc-link voltage control at MPP during sags. 2) Increased VAR support during voltage sags. 3) Increased use of renewable energy as all active power is injected back to the grid during voltage sags. Finally, the proposed solution is more cost effective compared with solutions that incorporate energy storage because only a few inverter components are required to be oversized. This paper also presents a detailed power loss analysis, which determined that that oversizing the power semiconductors has minimal impact in the inverter losses while significatively reducing the diode and IGBT conduction losses during both normal operation and grid fault conditions.

Ferrari Maglia, Max↗
DOE OSTI2024

Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles

In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Fiber-Optic Silicon Fabry-Perot Interferometric Bolometer: The Influence of Mechanical Vibration and Magnetic Field

Plasma radiation plays an important role in the operation and control of magnetic confinement fusion and is typically measured by bolometers. Here, we study the influence of mechanical vibration and magnetic field, which are typically present in magnetic confinement fusion devices, on the performance of a fiber-optic bolometer (FOB) based on silicon Fabry-Perot interferometer (FPI) demodulated by a scanning diode laser. It is found that both the vibration and magnetic field could cause large noise due to the birefringence of the silicon FPI. To mitigate the birefringence effects, we demonstrated two effective methods: polarization maintaining FOB and polarization scrambling. We show that two methods can be effective in mitigating the effect caused by the sensor birefringence: (1) replacing the regular single-mode fiber in the FOB system with polarization-maintaining fiber and (2) using a polarization scrambler after the laser source. For both methods, no significant increase in the noise was observed in the vibration and magnetic field tests. Finally, our research highlights the importance of the polarization management for the FOB systems toward their practical applications in magnetic-confinement fusion systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗
DOE OSTI2020

An Overview of Spread Spectrum Time Domain Reflectometry Responses to Photovoltaic Faults

Spread spectrum time domain reflectometry (SSTDR) is a broadband electrical reflectometry technique that has been used to detect and locate faults on live electrical systems, including photovoltaic systems. In this article, we evaluate the detectability and localizability from both existing literature and our own measurements using SSTDR of open-circuit faults, connection faults, short-circuit faults, ground faults, arc faults, shading faults, bypass diode faults, and accelerated degradation faults in PV cells and mini-modules. Additionally, reflection magnitudes for these faults are compared. Herein, preliminary data on buried and grounded PV cable along with arc fault detection are presented.

14 SOLAR ENERGY↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
DOE OSTI2025

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗
DOE OSTI2020

A Harmonics Interferometric Doppler Sensor With a Neon Lamp Detector

A cost-effective harmonic interferometric Doppler sensor has been developed to obtain both amplitude and phase of the micro-Doppler signatures of moving objects. A phase chopper is used to generate the harmonics of the interferometry signal. For cost-effectiveness, a Gunn diode source is used for signal generation and a neon lamp is employed as a broadband detector. An advanced signal processing algorithm has been developed to extract both amplitude and phase Doppler signatures. A prototype has been built to demonstrate the effectiveness of the harmonic interferometric Doppler sensor at 35 GHz, with Doppler objects such as human hand and metal objects. In addition, the broadband detection capability of the neon lamp allows the Doppler sensor to work up to the millimeter-wave regime and potentially beyond the terahertz (THz) wave regime. Due to the ruggedness of the neon lamp detector, it is expected that the Doppler sensor has important applications of sensing and wireless communication in harsh environment such as high-temperature, high-power and radioactive conditions.

Doppler sensor↗
DOE OSTI2020

Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2024

Data-Driven Model for Photovoltaic Generation: Comparison with Physical Models Using a Microgrid in Puerto Rico

Photovoltaic (PV) generation is a critical component of microgrids, but its accurate modeling is challenging due to the complex and dynamic interactions between solar irradiance, temperature, and PV system installation. This paper develops a multilayer perceptron (MLP) model that inputs solar irradiance and temperature to estimate the PV generation, and it compares the proposed data-driven model’s performance to two well-known physical models: the single-diode model and the inverter model. The results demonstrate that all the models can reach high levels of accuracy. However, the MLP model outperforms the physical models on average by 4.5 to 6.6 percent in R squared scores and 220 to 290 Watts in RMSE scores, and it does not require physical system parameters. Moreover, the data-driven model can overcome the limitations of the lack of real-time PV generation data.

R pesante colón, Marcos↗
DOE OSTI2020

In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation

We report on the role of sodium in potentialinduced degradation (PID) of Cu(In, Ga)Se 2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Platform for Accurate Efficiency Quantification of > 35% Efficient Thermophotovoltaic Cells

Thermophotovoltaic (TPV) devices convert thermal radiation directly into electricity using semiconductor diodes and have a variety of uses from waste heat recovery to energy storage to primary power conversion. Recent results have demonstrated promising cells nearing and surpassing 30% conversion efficiency. As TPV cells continue to increase in efficiency, they become attractive for a wider range of applications. Their efficiencies must be quantified in a standardized fashion to compare results accurately across research groups. Here, we outline and quantify the most important characteristics of an accurate and precise TPV efficiency measurement. Using a custom-built measurement apparatus that takes these characteristics into account, we report 19 cells with greater than 30% conversion efficiency and 2 cells with greater than 35% conversion efficiency. This confirms that our reported cell efficiencies are not simply those of hero cells but rather of a distribution of cells that can be produced in a consistent, high-quality process.

III-V↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗