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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Recent DIII-D progress toward validating models of tungsten erosion, re-deposition, and migration for application to next-step fusion devices

Abstract Fundamental mechanisms governing the erosion and prompt re-deposition of tungsten impurities in tokamak divertors are identified and analyzed to inform the lifetime of tungsten plasma-facing components in ITER and other future devices. Various experiments conducted at DIII-D to benchmark predictive models are presented, leveraging the DiMES removable sample exposure probe capability and the Metal Rings Campaign, in which toroidally symmetric rows of tungsten-coated tiles were installed in the DIII-D divertor. In tokamak divertors, the width of the electric sheath is of the order of the main ion Larmor radius, and a vast majority of sputtered tungsten impurities are typically ionized within the sheath. Therefore, W prompt redeposition is mainly governed by the ratio of the characteristic ionization mean-free path of neutral tungsten to the width of the sheath. In-situ monitoring of the prompt redeposition of tungsten impurities in divertors is demonstrated via the use of WII/WI line ratios and the ionizations/photon (S/XB) method in L-mode discharges. Even with this relatively limited set of emission measurements, net erosion measurements were found to be a consistent upper bound to an analytic scaling based on the ratio of the W ionization length, λ iz , and the width of the magnetic sheath rather than the ratio of λ iz and the W + gyro-radius. In the far-scrape-off layer (SOL) of the ITER divertor, however, it is calculated that the measurement of photon emissions associated with the ionization of tungsten impurities up to W 5 + may be required. Finally, W deposition patterns on DiMES collector probes, interpreted via DIVIMP-WallDYN modelling, reveal the key roles of progressive W erosion/re-deposition staps and E × B drifts in regulating long-range high-Z material migration.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Explicit structure-preserving geometric particle-in-cell algorithm in curvilinear orthogonal coordinate systems and its applications to whole-device 6D kinetic simulations of tokamak physics

Explicit structure-preserving geometric particle-in-cell (PIC) algorithm in curvilinear orthogonal coordinate systems is developed. The work reported represents a further development of the structure-preserving geometric PIC algorithm achieving the goal of practical applications in magnetic fusion research. The algorithm is constructed by discretizing the field theory for the system of charged particles and electromagnetic field using Whitney forms, discrete exterior calculus, and explicit non-canonical symplectic integration. In addition to the truncated infinitely dimensional symplectic structure, the algorithm preserves exactly many important physical symmetries and conservation laws, such as local energy conservation, gauge symmetry and the corresponding local charge conservation. As a result, the algorithm possesses the long-term accuracy and fidelity required for first-principles-based simulations of the multiscale tokamak physics. The algorithm has been implemented in the SymPIC code, which is designed for high-efficiency massively-parallel PIC simulations in modern clusters. The code has been applied to carry out whole-device 6D kinetic simulation studies of tokamak physics. A self-consistent kinetic steady state for fusion plasma in the tokamak geometry is numerically found with a predominately diagonal and anisotropic pressure tensor. The state also admits a steady-state sub-sonic ion flow in the range of 10 km s -1 , agreeing with experimental observations and analytical calculations Kinetic ballooning instability in the self-consistent kinetic steady state is simulated. It is shown that high-n ballooning modes have larger growth rates than low-n global modes, and in the nonlinear phase the modes saturate approximately in 5 ion transit times at the 2% level by the E × B flow generated by the instability. These results are consistent with early and recent electromagnetic gyrokinetic simulations.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Hierarchical and scalable integration of nanostructures for energy and environmental applications: a review of processing, devices, and economic analyses

Hierarchical nanostructure, an engineered nanostructure with a higher assembly-level of constituents by low dimensional nano-building blocks, has received extensive attentions in the latest advancements in nanomaterial science and nanotechnology development. The ordered hierarchical nanostructures could offer merits such as more active sites, synergistic properties owing to their geometric complexity and building blocks variation, as well as the resultant multi-functional capabilities. In this review, we specifically focus on the integration approaches that may be feasible for large-scale production and manufacturing of engineered nanomaterials for various industrial applications, and the design criteria of hierarchical nanostructures targeted at various sustainable energy and environmental applications. In addition to chemical synthesis and integration methods, the development and application of hierarchical nanostructures are surveyed in energy conversion, generation, storage, utilization, and sensing devices. Meanwhile, a much-needed survey is also touched upon the techno-economic analyses of engineered nanomaterials, proposing the need of establishing various standard protocols on various factors and parameters that could be envisaged as a guide toward the viable transition to the practices in the future nano-industries.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Benchmarking near-term quantum devices with the variational quantum eigensolver and the Lipkin-Meshkov-Glick model

The variational quantum eigensolver is a promising algorithm for noisy intermediate scale quantum (NISQ) computation. Verification and validation of NISQ algorithms' performance on NISQ devices is an important task. Here, we consider the exactly diagonalizable Lipkin-Meshkov-Glick (LMG) model as a candidate for benchmarking NISQ computers. We use the Bethe Ansatz to construct eigenstates of the trigonometric LMG model using quantum circuits inspired by the LMG's underlying algebraic structure. We construct circuits with depth $\mathcal{O}$(N) and $\mathcal{O}$(log 2 N) that can prepare any trigonometric LMG eigenstate of N particles. The number of gates required for both circuits is $\mathcal{O}$(N). The energies of the eigenstates can then be measured and compared to the exactly known answers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electron-mediated entanglement of two distant macroscopic ferromagnets within a nonequilibrium spintronic device

Using the nascent concept of quantum spin-transfer torque, we demonstrate that a current pulse can be harnessed to entangle quantum localized spins of two spatially separated ferromagnets (FMs) which are initially unentangled. The envisaged setup is composed of a spin-polarizer (FM p ) and a spin-analyzer (FM a ) FM layers separated by a normal metal (NM) spacer. The injection of a current pulse into the device leads to a time-dependent superposition of many-body states characterized by a high degree of entanglement between the spin degrees of freedom of the two distant FM layers. The nonequilibrium dynamics are due to the transfer of spin angular momentum from itinerant electrons to the localized spins via a quantum spin-torque mechanism that remains active even for collinear but antiparallel arrangements of the FM p and FM a magnetizations (a situation in which the conventional spin torque is absent). We quantify the mixed-state entanglement generated between the FM layers by tracking the time evolution of the full density matrix and analyzing the build-up of the mutual logarithmic negativity over time. The effect of decoherence and dissipation in the FM layers due to coupling to bosonic baths at finite temperature, the use of multielectron current pulses, and the dependence on the number of spins are also considered in an effort to ascertain the robustness of our predictions under realistic conditions. Lastly, we propose a “current-pump–x-ray-probe” scheme, utilizing ultrafast x-ray spectroscopy, that can witness nonequilibrium and transient entanglement of the FM layers by extracting its time-dependent quantum Fisher information.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Enhancing Graphene Plasmonic Device Performance via its Dielectric Environment

Graphene plasmons provide a compelling avenue toward chip-scale dynamic tuning of infrared light. Dynamic tunability emerges through controlled alterations in the optical properties of the system defining graphene’s plasmonic dispersion. Typically, electrostatic induced alterations of the carrier concentration in graphene working in conjunction with mobility have been considered the primary factors dictating plasmonic tunability. We find here that the surrounding dielectric environment also plays a primary role, dictating not just the energy of the graphene plasmon but so too the magnitude of its tuning and spectral width. To arrive at this conclusion, poles in the imaginary component of the reflection coefficient are used to efficiently survey the effect of the surrounding dielectric on the tuning of the graphene plasmon. By investigating several common polar materials, optical phonons (i.e., the Reststrahlen band) of the dielectric substrate are shown to appreciably affect not only the plasmon’s spectral location but its tunability, and its resonance shape as well. In particular, tunability is maximized when the resonances are spectrally distant from the Reststrahlen band, whereas sharp resonances (i.e., high-Q) are achievable at the band’s edge. Overall, these observations both underscore the necessity of viewing the dielectric environment in aggregate when considering the plasmonic response derived from two-dimensional materials and provide heuristics to design dynamically tunable graphene-based infrared devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

SENSEI: Characterization of Single-Electron Events Using a Skipper Charge-Coupled Device

We use a science-grade skipper charge-coupled device (skipper CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as "dark counts": dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89±0.77)×10 -4 e - /pix/day, and an unprecedentedly low spurious charge contribution of (1.52±0.07)×10 -4 e - /pix, which is exposure independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing research and development efforts of skipper and conventional CCDs.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, in this work, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H k 2 = 0.47 mT) and first-order ($H^{eff}_{k_1}$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences

Here, we study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anticorrelated noise, respectively. From these measurements we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. We expect nuclear spin noise to have an uncorrelated nature. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti)correlated noise sources with an asymmetric effect on the two qubits as can result from charge noise. Such a scenario in combination with nuclear spins is plausible given the data and the known decoherence mechanisms. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Spin-caloric resistance of Dirac plasma in a graphene Corbino device

The thermal resistance of a spin-polarized hydrodynamic Dirac plasma in graphene is considered. Here, a mechanism for the coupling of heat and spin flows is discussed, demonstrating that spin diffusion and spin thermocurrent modify viscous dissipation, leading to a significant enhancement of thermal resistance. Practical calculations are then presented for graphene devices in the Corbino geometry.

Graphene↗
DOE OSTI2020

Accessing the Spectral Function in a Current-Carrying Device

The presence of an electrical transport current in a material is one of the simplest and most important realizations of nonequilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves, insulator-to-metal transitions, or gap openings in topologically protected states. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid’s electronic, optical, and chemical properties. In this work, we show that angle-resolved photoemission spectroscopy with a nanoscale light spot provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local nonequilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows simultaneous noninvasive local measurements of the composition, structure, many-body effects, and carrier mobility in the presence of high current densities. In the particular case of our graphene-based device, we are able to correlate the presence of structural defects with locally reduced carrier lifetimes in the spectral function and a locally reduced mobility with a spatial resolution of 500 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Quantum Solver of Contracted Eigenvalue Equations for Scalable Molecular Simulations on Quantum Computing Devices

The accurate computation of ground and excited states of many-fermion quantum systems is one of the most consequential, contemporary challenges in the physical and computational sciences whose solution stands to benefit significantly from the advent of quantum computing devices. Existing methodologies using phase estimation or variational algorithms have potential drawbacks such as deep circuits requiring substantial error correction or non-trivial high-dimensional classical optimization. In this work, we introduce a quantum solver of contracted eigenvalue equations, the quantum analogue of classical methods for the energies and reduced density matrices of ground and excited states. The solver does not require deep circuits or difficult classical optimization and achieves an exponential speed-up over its classical counterpart. We demonstrate the algorithm though computations on both a quantum simulator and two IBM quantum processing units.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Observation of Zero-Field Transverse Resistance in AlO x / SrTi O 3 Interface Devices

Domain walls in AlO x =SrTiO 3 (AlO x =STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based heterostructures: a finite transverse resistance observed in Hall bars in zero external magnetic field. This transverse resistance depends on the local domain wall configuration and hence changes with temperature, gate voltage, thermal cycling, and position along the sample and can even change sign as a function of these parameters. The transverse resistance is observed below ≃70 K but grows and changes significantly below ≃40 K, the temperature at which the domain walls become increasingly polar. Surprisingly, the transverse resistance is much larger in (111) oriented heterostructures in comparison to (001) oriented heterostructures. Measurements of the capacitance between the conducting interface and an electrode applied to the substrate, which reflect the dielectric constant of the STO, indicate that this difference may be related to the greater variation of the temperature-dependent dielectric constant with electric field when the electric field is applied in the [111] direction. Further, the finite transverse resistance can be explained inhomogeneous current flow due to the preferential transport of current along domain walls that are askew to the nominal direction of the injected current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Doubling fusion power with volumetric optimization in magnetic confinement fusion devices

A technique, volumetric power optimization, is presented for enhancing the power output of magnetic confinement fusion devices. Applied to a tokamak, this approach involves shifting the burning plasma region to a larger plasma volume while introducing minimal perturbations to the plasma boundary shape. This edge perturbation—squareness—is analogous to pinching and stretching the edge boundary. Stability calculations confirm that this edge alteration is compatible with maintaining plasma stability. This optimization method for optimizing fusion power output could improve the performance of magnetic confinement fusion power plants.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Charge- 4 e and Charge- 6 e Flux Quantization and Higher Charge Superconductivity in Kagome Superconductor Ring Devices

The flux quantization is a key indication of electron pairing in superconductors. For example, the well-known h / 2 e flux quantization is considered strong evidence for the existence of charge- 2 e , two-electron Cooper pairs. Here we report evidence for multicharge flux quantization in mesoscopic ring devices fabricated using the transition-metal kagome superconductor CsV 3 Sb 5 . We perform systematic magnetotransport measurements and observe unprecedented quantization of magnetic flux in units of h / 4 e and h / 6 e in magnetoresistance oscillations. Specifically, at low temperatures, magnetoresistance oscillations with period h / 2 e are detected, as expected from the flux quantization for charge- 2 e superconductivity. We find that the h / 2 e oscillations are suppressed and replaced by resistance oscillations with h / 4 e periodicity when the temperature is increased. Increasing the temperature further suppresses the h / 4 e oscillations, and robust resistance oscillations with h / 6 e periodicity emerge as evidence for charge- 6 e flux quantization. Our observations provide the first experimental evidence for the existence of multicharge flux quanta and emergent quantum matter exhibiting higher-charge superconductivity in the strongly fluctuating region above the charge- 2 e Cooper pair condensate, revealing new insights into the intertwined and vestigial electronic order in kagome superconductors. Published by the American Physical Society 2024

Physics↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2022

Device-Centric Firmware Malware Detection for Smart Inverters using Deep Transfer Learning

Since future power grids are inverter-dominant grids and inverters are getting smarter by incorporating remote access and seamless firmware update, it is anticipated that malware attackers will directly target smart inverters. However, malware threats targeting smart inverters have been less studied yet. This paper explores potential malware attacks targeting smart inverters and proposes a deep transfer-learning (DTL)-based malware detection framework for smart inverters. The proposed DTL method can significantly reduce development time and efforts for an artificial intelligence-based malware detection algorithm while improving detection accuracy. The experimental result shows that the proposed method achieves 98% of firmware malware detection accuracy. Furthermore, this approach will be transformative to other smart grid devices enabling seamless firmware update.

artificial intelligence↗