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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Reducing Dark Conductivity of Cesium Tin Halide Perovskites with Donor Doping

The inorganic tin halide perovskites (such as Cs Sn Br 3 and Cs Sn I 3 ) exhibit high hole concentrations, which have been attributed to the presence of intrinsic defects such as cation vacancies. Despite their promise as photovoltaic materials, this high intrinsic conductivity limits deployment. Using hybrid density functional theory, we examine the impact of these intrinsic defects on the electronic properties of Cs Sn Br 3 and Cs Sn I 3 . We find that tin and cesium vacancies have low formation energies, especially under Sn -poor conditions, in agreement with prior work, and that the presence of these native acceptor defects can lead to high hole concentrations. However, effective donor doping of these systems can be obtained via Sc or Y incorporation. These impurities substitute on the Sn site, where they act as single donors. By examining the formation energy of these dopants versus the native defects, we show that Sc or Y doping should lead to a strong compensation, reducing hole concentrations under Sn -rich conditions. Published by the American Physical Society 2025

Lyons, John L. (ORCID:0000000180233055)↗
DOE OSTI2025

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗
DOE OSTI2021

Electron Paramagentic Resonance Investigation of Mechanism of Light- and Elevated-Temperature-Induced Degradation in Ga-doped Cz Si

We report on the electron paramagnetic resonance (EPR) spectra recorded at 6 K for Ga-doped Czochralski (Cz) Si in the initial stages of light- and elevated-temperature-induced degradation (LeTID). We show that the narrow-range EPR spectrum depends on the duration of simultaneous heat and light exposure. After prolonged LeTID, the EPR intensity increases at ~334 mT. The EPR signature at ~334 mT is characteristic of Si dangling bonds, and the increase in the dangling bond density can be attributed to the bulk and not the surface. Additionally, we show that the inverse of the minority carrier lifetime in Ga-doped Cz Si samples, measured by quasi-steady-state photoconductance (QSSPC) decay, correlates with the increase in the intensity of the Si dangling bond signal measured by EPR. Based on these observations, we put forth a hypothesis connecting H to LeTID and the corresponding defect structure.

Cz Si↗
DOE OSTI2022

Hybrid Functional Calculations for Antimony Doping in CdTe

CdTe-based solar cells are leading thin-film photovoltaic technology, with efficiencies over 22%, but still much lower than the theoretical maximum of 29%. Further improvements will rely on increasing the open-circuit voltage Voc, which, in turn, depends on carrier density and lifetime. Using hybrid density functional calculations, we investigate Sb doping of CdTe, focusing on its limitation as shallow acceptor and the formation of compensating AX center. Paying special attention to supercell size and effects of spin-orbit coupling, we predict an ionization energy of 116 meV in the dilute limit, much closer to recent experimental value of 103 meV from temperature-dependent Hall measurements in bulk single crystals, and in contrast to much larger values from previous calculations. We also find that the Sb-related AX centers are not major compensation centers in Sb-doped CdTe.

14 SOLAR ENERGY↗
DOE OSTI2021

Growth of High-Performance 4-5μm Thick Film REBCO Tapes Doped With Hafnium Using Advanced MOCVD

Advanced metal organic chemical vapor deposition technique (A-MOCVD) was used to grow 4-5 µm thick REBa 2 Cu 3 O 7–δ (REBCO, RE = rare earth) films, doped with 5% and 15% Hf. Thick REBCO films doped with 5% Hf exhibit self-field critical current density (J c ) over 1.8 MA/cm 2 at 77 K and 3 MA/cm 2 at 65 K, 1.5 T. Increasing the Hf content to 15% resulted in J c above 9 MA/cm 2 at 20 K, 9 T. The effect of (Ba+Hf)/Cu content in Hf-added (5 and 15 mol.%) REBCO films on the critical current density at 77 K, 0 T, c-axis lattice parameter and out-of- plane texture has been studied. In addition to growth of thick film REBCO tapes with superior performance, the A-MOCVD reactor has been used to quadruple the precursor-to-film conversion efficiency above 45%. Furthermore, this achievement has a first order impact in lowering the cost of REBCO tapes made by A-MOCVD.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2024

Boron-10 Doped Polysiloxanes as Matrix Materials for Application in the Simultaneous Detection and Discrimination of Gamma Rays and Fast and Thermal Neutrons

Three boron-10 enriched aromatic molecules have been synthesized and incorporated into two different commercial polysiloxane resins, Shin Etsu KER-6000 and Wacker SilRes H62-C. Scintillating fluorophores, 9,9-dimethyl-2-phenylfluorene (PhF) and 2,5-diphenyloxazole (PPO), were tested in combination with each resin and boron-10 molecule for the simultaneous detection of gamma rays, fast neutrons, and thermal neutrons. Here, the H62-C resin was able to solubilize a large amount of PhF, in excess of 20 wt%. Cure kinetics were controlled through the addition of divinylbenzene and phenyl tris(dimethylsiloxy)silane cross-linker solution to the H62-C resin, with rheology experiments demonstrating a large reduction in time to gelation when 20 wt% cross-linker solution was added, from more than 4 hours to less than 1 hour. These polysiloxane resins can be cured in 3 hours under air, while common poly(vinyltoluene) scintillators require at least 4 days of heating and oxygen-free conditions. PhF-doped KER-6000 with tolyl boronate pinacol ester exhibited the best overall performance with a light yield of 62% relative to EJ-200 and thermal neutron capture at energies up to 103 keVee (84 keVee for EJ254B-5). Additionally, four samples exhibited light yields surpassing an industry-standard boron-doped plastic scintillator, Eljen’s EJ254B-5. Over the course of ten months, the KER-6000 samples showed precipitation of dopant molecules, which reduced their light yield by 15% on average, while H62-C proved to be more stable with only a 6% reduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Elastic and thermodynamic properties of cerium-doped yttrium aluminum garnets

Cerium-doped yttrium aluminum garnets (Y 3-x Ce x Al 5 O 12 , Ce:YAGs) are promising yellow light-emitting components of solid-state white light-emitting diodes. Although there have been numerous studies examining the effects of Ce concentrations on the luminescent properties of Y 3-x Ce x Al 5 O 12 , the impacts of Ce dopant on the elastic and thermodynamic properties are not well understood. In this work, we used resonant ultrasound spectroscopy (RUS) to determine the effects of Ce doping (0.025, 0.1, 1 at. %) on the elastic and thermodynamic properties of Y 3-x Ce x Al 5 O 12 . The elastic moduli calculated via the Voigt–Reuss–Hill (VRH) method demonstrated that low Ce dopant concentrations (≤0.1 at. %) induced negligible effects on the elasticity of the YAG host matrix, while a high Ce concentration (1 at. %) yielded significant softening. RUS spectral analysis and SEM images suggested that the elastic softening originated from microstructural differences induced at higher Ce dopant concentrations. Additionally, we demonstrated an increase in elastic anisotropy at higher Ce concentrations, which further elucidated the correlations between structure and elasticity of Y 3-x Ce x Al 5 O 12 . Debye temperatures ($θ_D$), heat capacities ($C_p$), and thermal conductivities ($\mathit{κ}$) were calculated for Ce:YAGs through the relations of RUS-derived parameters (sound velocities, elastic moduli) and previously determined thermal expansion coefficients. Ce:YAG was found to have a significant reduction in $θ_D$, Cp, and $\mathit{κ}$ at Ce concentrations ≥1 at. %. Lastly, extrapolation of $C_p$ and $\mathit{κ}$ to higher temperatures allowed the modeling of thermal stress experienced by Y 3-x Ce x Al 5 O 12 disks up to 1073.15 K.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chromium Poisoning Mitigation Strategy in Strontium-Doped Lanthanum Manganite-Based Air Electrodes in Solid Oxide Fuel Cells

Abstract Chromium poisoning of the air electrode remains an obstacle to the long-term performance of solid oxide fuel cells (SOFCs). In Sr-doped LaMnO3 (LSM) air electrodes, the poisoning process results in two types of deposits, chromium oxide (Cr2O3), and Mn, Cr spinel (MnCr2O4). The former forms electrochemically and the latter forms via a chemical reaction. By applying a small anodic reverse bias, Cr2O3 deposits can be removed because their formation is electrochemical in nature. However, MnCr2O4 deposits remain because their formation is chemical, rather than electrochemical, in nature. In situ chemical decomposition of the Mn, Cr spinel was investigated as an alternate removal method as thermodynamics supports its decomposition into constituent oxides below ∼540 °C in pure oxygen. The spinel decomposition process was characterized using thermogravimetric and X-ray diffraction analyses. The experimentally determined rate of spinel decomposition was undetectable (very slow) with isolated MnCr2O4 powders. The addition of 10 mol% gadolinia doped ceria (GDC) and silver powders significantly increased the rate of decomposition. However, the rate is limited by the diffusion of oxygen through the decomposed oxide layer. Although one strategy may be the addition of GDC and silver to the LSM air electrode to enhance spinel decomposition, the more effective mitigation strategy would be to prevent the formation of MnCr2O4 spinel in the first place through the removal of the reactants: Cr2O3 via electrochemical cleaning and mobile Mn ions in the zirconia electrolyte by incorporating a diffusion barrier layer such as GDC between the air electrode and electrolyte.

Electrochemistry↗
DOE OSTI2023

Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO 2 ) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Room-temperature high-purity single-photon emission from carbon-doped boron nitride thin films

Hexagonal boron nitride (h-BN) has emerged as a promising platform for generating room temperature single photons exhibiting high brightness and spin-photon entanglement. However, improving emitter purity, stability, and scalability remains a challenge for quantum technologies. Here, we demonstrate highly pure and stable single-photon emitters (SPEs) in h-BN by directly growing carbon-doped, centimeter-scale h-BN thin films using the pulsed laser deposition (PLD) method. These SPEs exhibit room temperature operation with polarized emission, achieving a g (2) (0) value of 0.015, which is among the lowest reported for room temperature SPEs and the lowest achieved for h-BN SPEs. It also exhibits high brightness (~0.5 million counts per second), remarkable stability during continuous operation (>15 min), and a Debye-Waller factor of 45%. First-principles calculations reveal unique carbon defects responsible for these properties, enabled by PLD’s low-temperature synthesis and in situ doping. Our results demonstrate an effective method for large-scale production of high-purity, stable SPEs in h-BN, enabling robust quantum optical sources for various quantum applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrochemistry-Induced Restructuring of Tin-Doped Indium Oxide Nanocrystal Films of Relevance to CO 2 Reduction

The electrochemical reduction of CO 2 into fuels using renewable electricity presents an opportunity to utilize captured CO 2 . Electrocatalyst development has been a primary focus of research in this area. This is especially true at the nanoscale, where researchers have focused on understanding nanostructure-property relationships. However, electrocatalyst structure may evolve during operation. Indium- and tin-based oxides have been widely studied as electrocatalysts for CO 2 reduction to formate, but evolution of these catalysts during operation is not well-characterized. Here, we report the evolution of nanoscale structure of precise tin-doped indium oxide nanocrystals under CO 2 reduction conditions. We show that sparse monolayer nanocrystal films desorb from the electrode upon charging, but thicker nanocrystal films remain, likely due to an increased number of physical contacts. Upon applying a cathodic voltage of –1.0 V vs RHE or greater, the original 10-nm diameter nanocrystals are no longer visible, and instead form a larger microstructural network. Elemental analysis suggests the network is an oxygen-deficient indium-tin metal alloy. We hypothesize that this morphological evolution is the result of nanocrystal sintering due to oxide reduction. Furthermore, these data provide insights into the morphological evolution of tin-doped indium oxide nanocrystal electrocatalysts under reducing conditions and highlight the importance of post-electrochemical structural characterization of electrocatalysts.

25 ENERGY STORAGE↗
DOE OSTI2025

Synergistic effects of Al, Ga, and In doping on ZnO nanorod arrays grown via citrate-assisted hydrothermal technique for highly efficient and fast scintillator screens

To be used as efficient alpha particle scintillator in the fields of nuclear security, nuclear nonproliferation and high-energy physics, scintillator screens must have high light output and fast decay properties. While there has been a great deal of progress in scintillation efficiency, achieving fast decay time properties are still a challenge. In this work, the near band edge (NBE) UV luminescence and alpha particle induced scintillation properties of vertically aligned densely packed ZnO nanorods (NRs) doped with Al, Ga, and In have been thoroughly investigated. The high crystalline hexagonal wurtzite structure with a strong orientation through the c -axis plane (002) and aspect ratios in the range 13–22 have been observed for all ZnO NRs. Electron paramagnetic resonance (EPR) analysis exhibited paramagnetic signals at g ≈ 1.96 for all ZnO NRs. A cost effective green hydrothermal synthesis technique was employed to grow well-aligned NRs. Using citrate as an additive acting as a strong reducing agent in the solution during the crystal growth, defects on the surface are significantly suppressed, thereby enhancing the NBE UV emission. Significantly higher NBE UV emission was observed from the top surface of ZnO NRs in cathodoluminescence (CL) microscopy. Results show that citrate assisted donor doping of ZnO NRs not only reduces the defect emission and NBE self-absorption, but also induces fast decay time (~ 600–700 ps), which makes ZnO NRs a good candidate for fast alpha particle scintillator screens used in associated particle imaging for time and direction tagging of individual neutrons generated in D–T and D–D neutron generators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

1.2-kW all-fiber Yb-doped multicore fiber amplifier

Here we have demonstrated a record-high 1.2 kW, all-fiber multicore amplifier using a six-core single-mode Yb-doped fiber and a multicore pump-signal combiner (PSC). The output power is limited by the pump power of 1.9 kW. We have developed double-clad six-core fibers and PSCs for this demonstration. Each of the six Yb-doped cores has a 17-µm mode-field diameter (MFD) with a trench index profile and is capable of kW-class operation. The potential power scaling to the 10-kW level in a single amplifier with high brightness should be feasible with advanced thermal management and coherent beam combination.

42 ENGINEERING↗
DOE OSTI2022

Challenges to Reliable Production Nitrogen Doping of Nb for SRF Accelerating Cavities

Over the last several years, alloying of the surface layer of niobium SRF cavities has been demonstrated to beneficially lower the superconducting RF surface resistance. Nitrogen, titanium, and oxygen have all been demonstrated as effective alloying agents, occupying interstitial sites in the niobium lattice within the RF penetration depth and even deeper, when allowed to thermally diffuse into the surface at appropriate temperatures. The use of nitrogen for this function has been often termed ’nitrogen doping’ and is being applied in the LCLS-II and LCLS-II HE projects. We report characterization studies of the distribution of nitrogen into the exposed niobium surface and how such distribution is affected by the quality of the vacuum furnace environment in which the doping takes place, and the complexity of nitride crystal growth on different grain orientations of surface niobium. Using state-of-the-art quantification methods by dynamic secondary ion mass spectrometry (SIMS) depth profiling in niobium, we identify several phenomena involving furnace-sourced contamination. We also highlight a potential issue with N₂ flow constraints from the flange ’caps’ used during heat treatments.

Reece, Charles↗
DOE OSTI2025

Transfer of EP and Doping Technology for PIP-II HB650 Cavities from Fermilab to Industry

Fermilab has optimized the surface processing conditions for PIP-II high beta 650 MHz cavities. This encompasses conditions for bulk electropolishing, heat treatment, nitrogen doping, post-doping final electropolishing, and post-processing surface rinsing. The technology has been effectively transitioned to industry. This paper highlights the efforts made to fine-tune the process and to smoothly share them with the partner labs and an associated vendor.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

On the Nature of Surface Defects Found in 2/0 N-Doped 9-Cell Cavities

In this contribution, we present a systematic study on the microstructure of 1.3 GHz 9-cell TESLA type SRF cavity, processed with 2/0 Nitrogen-doping surface treatment, to explain the premature quench phenomena commonly observed in N-doping treated cavities. The microstructure characterization was carried out using Secondary electron images, advanced metallurgical techniques such as EBSD in parallel with chemical information obtained from spectroscopic techniques. The most remarkable difference is observed in the ends-cavities (1 and 9), which showed roughening of the surface, revealing a series of morphologies associated with Nb cubic phase. The cell-to-cell analysis also showed standard features such as pits with different geometry and distribution, located in grains and grain boundaries. The defects found in this system suggest that the standard electropolishing chemical etching was insufficient to eliminate history defects produced during the manufacture of the cavity, without discarding the role of the impurities, N and O, that could have induced the growth of these morphologies.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

First N-Doping and Mid-T Baking of Medium-ß 644 MHz 5-Cell Elliptical Superconducting RF Cavities for Michigan State University’s Facility for Rare Isotope Beams

Two hadron linacs currently under development in the US, the PIP-II linac at Fermi National Accelerator Laboratory (FNAL) and the upgrade for Michigan State University’s Facility For Rare Isotope Beams (FRIB), will employ 650 and 644 MHz ß-0.6 elliptical superconducting cavities respectively to meet their design energy requirements. The desired CW operation modes of these two linacs sets Q-factor requirements well above any previously achieved for cavities at this operating frequency and velocity, driving the need to explore new high-Q treatments. The N-doping technique developed at FNAL and employed at an industrial scale to the LCLS-II cryomodules is a strong candidate for high-Q treatments, but work is needed to refine the treatment to the lower operating frequency and velocity regime. We present the first results of the first N-doping tests and a "mid-T" bake test in the FRIB 644 MHz 5-cell elliptical cavities.

43 PARTICLE ACCELERATORS↗