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DOE OSTI2026

Design and simulation of n -type solar cells based on an iodine-doped CdTe absorber using SCAPS-1D

The performance of conventional p-type CdTe solar cells has plateaued in recent years, motivating exploration of n-type absorbers. Here, we evaluate a homojunction solar cell employing iodine-doped CdTe (CdTe:I) as the absorber in a Ti 3 C 2 T x MXene/p-CdTe:As/n-CdTe:I/indium structure through SCAPS-1D simulations and prototype devices. Optimized simulations predict efficiencies above 25% for thin CdTe:I absorbers (~0.7 μm). In contrast, the first prototype achieved only ~1.36% efficiency with V OC = 0.48 V, J SC = 6.45 mA/cm 2 and FF = 43.8%. When the simulation is adjusted to match the actual device structure, and the effective illumination is reduced to account for front-side light loss, the predicted V OC (0.48 V) and JSC (6.74 mA/cm 2 ) closely reproduce the experimental values. This suggests that the device performance is primarily limited by reduced front-side photon transmission and other material non-idealities. These results highlight the promise of iodine-doped n-type CdTe and identify clear pathways for further efficiency improvement.

14 SOLAR ENERGY↗

DOE OSTI2020

Extrinsic Absorption Pathways in Vanadium-Doped SiC Measured Using a Total Internal Reflection Geometry

Vanadium-doped SiC is under study for high-power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect-mediated electronic transition pathways from sub-bandgap illumination in this material with low absorption and multi-photon and multi-path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium-doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Furthermore, normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co-dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

Abstract The poor electrical conductivity of two‐dimensional (2D) crystalline frameworks greatly limits their utilization in optoelectronics and sensor technology. Herein, we describe a conductive metallophthalocyanine‐based NiPc‐CoTAA framework with cobalt(II) tetraaza[14]annulene linkages. The high conjugation across the whole network combined with densely stacked metallophthalocyanine units endows this material with high electrical conductivity, which can be greatly enhanced by doping with iodine. The NiPc‐CoTAA framework was also fabricated as thin films with different thicknesses from 100 to 1000 nm by the steam‐assisted conversion method. These films enabled the detection of low‐concentration gases and exhibited remarkable sensitivity and stability. This study indicates the enormous potential of metallophthalocyanine‐based conductive frameworks in advanced stand‐off chemical sensors and provides a general strategy through tailor‐make molecular design to develop sensitive and stable chemical sensors for the detection of low‐concentration gases.

Yue, Yan↗

DOE OSTI2021

Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

Yue, Yan↗

DOE OSTI2022

Disorder driven variations in magnetoresistance and planar Hall effect in Bi 2 Te 3 thin films

The degenerately doped sesquichalcogenide Bi 2 Te 3 , a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here, in this study, we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi 2 Te 3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μ H ) are compared with results of similar measurements on single crystals and epitaxial films of Bi 2 Te 3 , where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (n s ) and mobility μ H of 9×10 20 cm -3 and 16.7 cm 2 V -1 s -1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of n s and μ H in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi 2 Te 3 based AMR and PHE sensors of magnetic fields.

36 MATERIALS SCIENCE↗

DOE OSTI2023

New Trick for an Old Dog: From Prediction to Properties of “Hidden Clathrates” Ba 2 Zn 5 As 6 and Ba 2 Zn 5 Sb 6

The zinc–antimony phase space has been heavily investigated due to the structural complexity and abundance of high-performing thermoelectric materials. Consequentially, the desire to use zinc and antimony as framework elements to encage rattling cations and achieve phonon-glass-electron-crystal-type properties has remained an enticing goal with only two alkali metal clathrates to date, Cs 8 Zn 18 Sb 28 and K 58 Zn 122 Sb 207 . Guided by Zintl electron-counting predictions, here we explored the Ba–Zn–Pn (Pn = As, Sb) phase space proximal to the expected composition of the type-I clathrate. In situ powder X-ray diffraction studies revealed two “hidden” compounds which can only be synthesized in a narrow temperature range. The ex situ synthesis and crystal growth unveiled that instead of type-I clathrates, compositionally close but structurally different new clathrate-like compounds formed, Ba 2 Zn 5 As 6 and Ba 2 Zn 5 Sb 6 . These materials crystallize in a unique structure, in the orthorhombic space group Pmna with the Wyckoff sequence i 2 h 6 gfe. Single-phase synthesis enabled the exploration of their transport properties. Rattling of the Ba cations in oversized cages manifested low thermal conductivity, which, coupled with the high Seebeck coefficients observed, are prerequisites for a promising thermoelectric material. Potential for further optimization of the thermoelectric performance by aliovalent doping was computationally analyzed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Intrinsic optical bistability of photon avalanching nanocrystals

Optically bistable materials respond to a single input with two possible optical outputs, contingent on excitation history. Such materials would be ideal for optical switching and memory, but the limited understanding of intrinsic optical bistability (IOB) prevents the development of nanoscale IOB materials suitable for devices. Here we demonstrate IOB in Nd 3+ -doped KPb 2 Cl 5 avalanching nanoparticles, which switch with high contrast between luminescent and non-luminescent states, with hysteresis characteristic of bistability. Here we elucidate a non-thermal mechanism in which IOB originates from suppressed non-radiative relaxation in Nd 3+ ions and from the positive feedback of photon avalanching, resulting in extreme, >200th-order optical nonlinearities. The modulation of laser pulsing tunes the hysteresis widths, and dual-laser excitation enables transistor-like optical switching. This control over nanoscale IOB establishes avalanching nanoparticles for photonic devices in which light is used to manipulate light.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Enhanced superconductivity by near-neighbor attraction in the doped extended Hubbard model

A recent experiment has unveiled an anomalously strong electron-electron attraction in the one-dimensional copper-oxide chain Ba 2–x Sr x CuO 3+δ . While the effect of the near-neighbor electron attraction V in the one-dimensional extended Hubbard chain has been examined recently, its effect in the Hubbard model beyond the one-dimensional chain remains unclear. Here, in this work, we report a density matrix renormalization group study of the extended Hubbard model on long four-leg cylinders on the square lattice. We find that the near-neighbor electron attraction V can notably enhance the long-distance superconducting correlations while simultaneously suppressing the charge-density-wave (CDW) correlations. Specifically, for a modestly strong electron attraction, the superconducting correlations become dominant over the CDW correlations with a Luttinger exponent K sc ~1 and strong divergent superconducting susceptibility. Our results provide a promising way to realize long-range superconductivity in the doped Hubbard model. The relevance of our numerical results to cuprate materials is also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Photon energy and polarization-dependent electronic structure of Cr-doped Bi 2 Se 3

In this article, we report a comparative study of the electronic structure of Cr-doped and pristine Bi 2 Se 3 . Circular dichroism and photon-energy-dependent angle-resolved photoemission experiments were performed. Even though the surface states seen on the Cr-doped samples are gapped, they exhibit strong circular dichroism, for which we provide its origin in accordance with the nontrivial band structure of the bulk. We note the surface electronic structure measurements with linear and circular polarized light show signatures that the orbital composition of the surface states is changed with Cr doping. Our observations not only provide further spectroscopic information about topological materials, but also promotes an alternative experimental tool to control their spin-orbital texture.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Novel n-type Device Architectures to Achieve 1 Volt V OC in Thin Film CdTe cells

The main goal of this project was to develop a novel thin film CdTe solar cell architecture based on an n-type absorber, which can overcome performance limitations associated with the typical p-Cd(Se)Te state-of-the-art architecture. Even today, the performance of the Cd(Se)Te cell continues to be limited by its open- circuit voltage, which is directly related to the net doping of the absorber. (currently @ approx. 900 mV for CdTe/CST device configuration). The proposed polycrystalline thin- film solar cell architecture was based on n-type CdTe (and CdSeTe) absorbers to overcome this limitation, since n-type CdTe absorbers offer advantages over p-type: (i) n-type dopability in CdTe is higher (than p), enabling higher doping and therefore higher V OC (ii) using a wide bandgap material as the p-contact, the n-CdTe cell can become a “bi-facial” cell, with the potential to increase energy yield up to 25% depending on environmental and mounting conditions.

14 SOLAR ENERGY↗

NASA NTRS1973

Deformation processes in forging ceramics

The deformation processes involved in the forging of refractory ceramic oxides were investigated. A combination of mechanical testing and forging was utilized to investigate both the flow and fracture processes involved. Deformation studies of very fine grain Al203 revealed an apparent transition in behavior, characterized by a shift in the strain rate sensitivity from 0.5 at low stresses to near unity at higher stresses. The behavior is indicative of a shift in control between two dependent mechanisms, one of which is indicated to be cation limited diffusional creep with significant boundary enhancement. The possible contributions of slip, indicated by crystallographic texture, interface control of the diffusional creep and inhomogeneous boundary sliding are also discussed. Additional experiments indicated an independence of deformation behavior on MgO doping and retained hot pressing impurities, at least for ultrafine grained material, and also an independence of test atmosphere.

Cannon, R. M.↗

NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Source record↗

NASA NTRS1990

MBE HgCdTe heterostructure detectors

HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

Schulman, Joel N.↗

NASA NTRS1992

Novel Cr(4+)-based tunable solid-state lasers

Spectroscopic and laser properties of chromium-doped forsterite (Cr:Mg2SiO4) are reviewed and future directions in development of other Cr(4+)-doped tunable solid-state lasers are discussed. The unique property of chromium-doped forsterite is that the lasing center was identified as tetravalent chromium (Cr(4+)) substituting for tetrahedrally coordinated Si(4+). Development of chromium-doped forsterite laser may stimulate the generation of a new class of tunable solid state lasers based on tetravalent chromium as a laser active ion for the near-IR eyesafe spectral range. The criteria for the development of new Cr(4+)-based tunable solid-state laser crystals are discussed. We also present current research efforts to identify potential low field host crystals, such as silicates, titanites, and germanates, that may be doped with Cr(4+) as an active ion. These new laser materials are expected to cover the wavelength region from 1 - 2 microns, which may be of great technological importance.

Petricevic, V.↗

NASA NTRS2004

Ionic Liquids and New Proton Exchange Membranes for Fuel Cells

There is currently a great surge of activity in fuel cell research as laboratories across the world seek to take advantage of the high energy capacity provided by &el cells relative to those of other portable electrochemical power systems. Much of this activity is aimed at high temperature fie1 cells, and a vital component of such &el cells must be the availability of a high temperature stable proton-permeable membrane. NASA Glenn Research Center is greatly involved in developing this technology. Other approaches to the high temperature fuel cell involve the use of single- component or almost-single-component electrolytes that provide a path for protons through the cell. A heavily researched case is the phosphoric acid fuel cell, in which the electrolyte is almost pure phosphoric acid and the cathode reaction produces water directly. The phosphoric acid fie1 cell delivers an open circuit voltage of 0.9 V falling to about 0.7 V under operating conditions at 170 C. The proton transport mechanism is mainly vehicular in character according to the viscosity/conductance relation. Here we describe some Proton Transfer Ionic Liquids (PTILs) with low vapor pressure and high temperature stability that have conductivities of unprecedented magnitude for non-aqueous systems. The first requirement of an ionic liquid is that, contrary to experience with most liquids consisting of ions, it must have a melting point that is not much above room temperature. The limit commonly suggested is 100 C. PTILs constitute an interesting class of non-corrosive proton-exchange electrolyte, which can serve well in high temperature (T = 100 - 250 C) fuel cell applications. We will present cell performance data showing that the open circuit voltage output, and the performance of a simple H2(g)Pt/PTIL/Pt/O2(g) fuel cell may be superior to those of the equivalent phosphoric acid electrolyte fuel cell both at ambient temperature and temperatures up to and above 200 C. My work at NASA Glenn Research Center during this summer is to develop and characterize proton exchange membranes doped with ionic liquids. The main techniques used to characterize these materials are: Impedance Spectroscopy, NMR, DSC, TGA, DMA, IR, and SEM ...

Belieres, Jean-Philippe↗

NASA NTRS2009

Series-Coupled Pairs of Silica Microresonators

Series-coupled pairs of whispering-gallery-mode optical microresonators have been demonstrated as prototypes of stable, narrow-band-pass photonic filters. Characteristics that are generally considered desirable in a photonic or other narrow-band-pass filter include response as nearly flat as possible across the pass band, sharp roll-off, and high rejection of signals outside the pass band. A single microresonator exhibits a Lorentzian filter function: its peak response cannot be made flatter and its roll-off cannot be made sharper. However, as a matter of basic principle applicable to resonators in general, it is possible to (1) use multiple resonators, operating in series or parallel, to obtain a roll-off sharper, and out-of-band rejection greater, relative to those of a Lorentzian filter function and (2) to make the peak response (the response within the pass band) flatter by tuning the resonators to slightly different resonance frequencies that span the pass band. The first of the two microresonators in each series-coupled pair was a microtorus made of germania-doped silica (containing about 19 mole percent germania), which is a material used for the cores of some optical fibers. The reasons for choosing this material is that exposing it to ultraviolet light causes it to undergo a chemical change that changes its index of refraction and thereby changes the resonance frequency. Hence, this material affords the means to effect the desired slight relative detuning of the two resonators. The second microresonator in each pair was a microsphere of pure silica. The advantage of making one of the resonators a torus instead of a sphere is that its spectrum of whispering-gallery-mode resonances is sparser, as needed to obtain a frequency separation of at least 100 GHz between resonances of the filter as a whole.

Savchenkov, Anatoliy↗

NASA NTRS2006

Semiconductor Bolometers Give Background-Limited Performance

Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

Goebel, John↗

NASA NTRS2011

Carbon Nanotube Based Nanotechnology for NASA Mission Needs and Societal Applications

Carbon nanotubes (CNT) exhibit extraordinary mechanical properties and unique electronic properties and therefore, have received much attention for more than a decade now for a variety of applications ranging from nanoelectronics, composites to meeting needs in energy, environmental and other sectors. In this talk, we focus on some near term potential of CNT applications for both NASA and other Agency/societal needs. The most promising and successful application to date is a nano chem sensor at TRL 6 that uses a 16-256 sensor array in the construction of an electronic nose. Pristine, doped, functionalized and metal-loaded SWCNTs are used as conducting materials to provide chemical variation across the individual elements of the sensor array. This miniaturized sensor has been incorporated in an iPhone for homeland security applications. Gases and vapors relevant to leak detection in crew vehicles, biomedical, mining, chemical threats, industrial spills and others have been demonstrated. SWCNTs also respond to radiation exposure via a change in conductivity and therefore, a similar strategy is being pursued to construct a radiation nose to identify radiation sources (gamma, protons, neutrons, X-ray, etc.) with their energy levels. Carbon nanofibers (CNFs) grown using plasma enhanced CVD typically are vertical, individual, freestanding structures and therefore, are ideal for construction of nanoelectrodes. A nanoelectrode array (NEA) can be the basis for an affinity-based biosensor to meet the needs in applications such as lab-on-a-chip, environmental monitoring, cancer diagnostics, biothreat monitoring, water and food safety and others. A couple of demonstrations including detection of e-coli and ricin will be discussed. The NEA is also useful for implantation in the brain for deep brain stimulation and neuroengineering applications. Miniaturization of payload such as science instrumentation and power sources is critical to reduce launch costs. High current density (greater than 100 mA/per square centimeters) field emission capabilities of CNTs can be exploited for construction of electron gun for electron microscopy and X-ray tubes for spectrometers and baggage screening. A CNT pillar array configuration has been demonstrated, not only meeting the high current density needs but more importantly providing long term emitter stability. Finally, supercapacitors hold the promise to combine the high energy density of a battery with the high power density of capacitors. Traditional graphite electrodes have not delivered this promise yet. A novel design and processing approach using MWCNTs has shown a record 550 F/g capacitance along with significant device endurance. This supercapacitor is suitable for railgun launch application for NASA, powering rovers and robots, consumer electronics and future hybrid vehicles.

Li, Jing↗