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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS 2 /MoO 3 ) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO 3 and the relative band alignment with MoS 2 , together with small energy gap, the MoS 2 /MoO 3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO 3 , the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS 2 , showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS 2 and MoO x (x < 3) interface, which consistently explains the available experimental observations.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tailoring the cavities of hydrogen-bonded amphidynamic crystals using weak contacts: towards faster molecular machines

This work describes the use of C–H∙∙∙F–C contacts in the solid-state from the stator towards the rotator to fine-tune their internal motion, by constructing a set of interactions that generate close-fitting cavities in three supramolecular rotors 1–3I. The crystal structures of these rotors, determined by synchrotron radiation experiments at different temperatures, show the presence of such C–H∙∙∙F–C contacts between extended carbazole stators featuring fluorinated phenyl rings and the 1,4-diazabicyclo[2.2.2]octane (DABCO) rotator. According to the 2 H NMR results, using deuterated samples, and periodic density functional theory computations, the rotators experience fast angular displacements (preferentially 120° jumps) due to their low rotational activation energies (E a = 0.8–2.0 kcal mol -1 ). The higher rotational barrier for 1 (2.0 kcal mol -1 ) is associated with a larger number of weak C–H∙∙∙F–C contacts generated by the stators. This strategy offers the possibility to explore the correlation among weak intermolecular forces, cavity shape, and internal dynamics, which has strong implications in the design of future fine-tuned amphidynamic crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Towards non-contact pollution monitoring in sewers with hyperspectral imaging

Monitoring water quality in sewers is challenging, particularly because state-of-the-art technologies require contact with the raw wastewater. The presence of fat, oil, grease, and solids makes automated grab sampling difficult and causes sensor fouling. To overcome these limitations, non-contact methods based on light reflectance, such as hyperspectral imaging (HSI), are gaining attention. However, HSI has never been tested for raw wastewater. To assess its accuracy for measuring pollution, we developed a laboratory setup and performed targeted experiments with a combination of raw and diluted wastewater, as well as synthetic turbidity stock solutions. We measured seven pollution variables: chemical oxygen demand, turbidity, dissolved organic compounds, ammonium, total nitrogen, phosphate, and sulphates. We used automated pixel selection and partial least squares regression to retrieve pollution information from the hyperspectral images. Our results, based on 144 samples, suggest that HSI can estimate pollution levels with a precision in the range of state-of-the-art absorbance spectrophotometric methods. Additionally, we found that the combination of pixel and wavelength selection, enabled by the hyperspectral data structure, significantly influences the performance of partial least square modelling. Overall, our findings indicate that HSI is a promising technology for non-contact monitoring of water quality in raw wastewater.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2013

Contact-free pyroelectric measurements using x-ray photoelectron spectroscopy

Non-contact pyroelectricity measurements based on x-ray photoelectron spectroscopy (XPS) are presented. Applied to Lithium Tantalate crystals, we demonstrate how the XPS-derived surface potential provides a simple probe of the desired property, free of all top-contact related difficulties. In particular, the increase in Lithium Tantalate spontaneous polarization under cooling, an experimentally challenging feature, is evaluated. We further inspect the roll of surface contaminants and the control over trapped surface charge in the XPS vacuum environment. Our approach can be extended to other non-contact probes, as well as to measuring additional electrical properties, such as piezoelectricity and ferroelectricity.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Improvement of field emission properties of α-Fe{sub 2}O{sub 3} nanoflakes due to the lowered back contact barrier after high energy X-ray irradiation

Improvement in the field emission properties of α-Fe{sub 2}O{sub 3} nanoflakes is observed after high energy X-ray irradiation from synchrotron radiation. Field emission threshold field of α-Fe{sub 2}O{sub 3} nanoflakes is found to decrease from 10.1 to 7.8 MV/m after X-ray irradiation with the dose of 9.0 × 10{sup 14} phs/cm{sup 2}. Electrical measurement reveals that the potential barrier at the back contact between the α-Fe{sub 2}O{sub 3} layer and the iron substrate changes after X-ray irradiation. The observed threshold field decrease is well explained by the changes in potential barrier at the back contact of α-Fe{sub 2}O{sub 3} nanoflakes, which indicates the back contact plays an important role in controlling the field emission properties of α-Fe{sub 2}O{sub 3} nanoflakes. Our study shows that the α-Fe{sub 2}O{sub 3} nanoflakes are a promising material for the application as field emitter under X-ray environment.

36 MATERIALS SCIENCE↗
DOE OSTI2013

High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide

Bottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N,N′-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm{sup 2} V{sup −1} s{sup −1} in nitrogen, higher than that (1 cm{sup 2} V{sup −1} s{sup −1}) of bottom-gate top-contact devices. The better performance of BGBC configuration in N{sub 2} is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 °C, electron mobility as high as 3.5 cm{sup 2} V{sup −1} s{sup −1}, current on/off ratio of 10{sup 6} and threshold voltage of 9 V are achieved in air, and the mobility retains above 1 cm{sup 2} V{sup −1} s{sup −1} after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H{sub 2}O and O{sub 2}, leading to excellent performance in air.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Characterization of metal contacts for two-dimensional MoS{sub 2} nanoflakes

While layered materials are increasingly investigated for their potential in nanoelectronics, their functionality and efficiency depend on charge injection into the materials via metallic contacts. This work explores the characteristics of different metals (aluminium, tungsten, gold, and platinum) deposited on to nanostructured thin films made of two-dimensional (2D) MoS{sub 2} flakes. Metals are chosen based on their work functions relative to the electron affinity of MoS{sub 2}. It is observed, and analytically verified that lower work functions of the contact metals lead to smaller Schottky barrier heights and consequently higher charge carrier injection through the contacts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of the contact potential and space-charge effect on the performance of a Stoffel-Johnson design electron source for inverse photoemission spectroscopy

By imaging the spatial intensity distribution of the electrons from a Stoffel-Johnson (SJ) type low energy electron source for inverse photoemission spectroscopy (IPES), we find that the focus is distorted when the beam current exceeds the limiting value due to space charge effect. The space charge effect and the contact potential difference suppress the beam current at low energies (<10 eV). In this work, we show that these limitations of the SJ source can be overcome by compensation of the contact potential difference between the cathode and the lens electrodes and an uniform well focused electron beam with the set kinetic energy can be obtained. The size of the electron beam is around 1 mm full width at half maximum over the whole energy range of 5 to 30 eV generally used for IPES. The compensation of the contact potential difference also enhances the beam current substantially at low energies (<10 eV) and uniform beam current is achieved for the whole energy range. We find that the drift in the electron beam position is sensitive to the lens electrode separation and it is about 1 mm over the whole energy range. By measuring the n = 1 image potential state on Cu(100), we show that the resolution is better when the cathode filament current is set to lower values.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Fabrication of carbon nanotube nanogap electrodes by helium ion sputtering for molecular contacts

Carbon nanotube nanogaps have been used to contact individual organic molecules. However, the reliable fabrication of a truly nanometer-sized gap remains a challenge. We use helium ion beam lithography to sputter nanogaps of only (2.8 ± 0.6) nm size into single metallic carbon nanotubes embedded in a device geometry. The high reproducibility of the gap size formation provides a reliable nanogap electrode testbed for contacting small organic molecules. To demonstrate the functionality of these nanogap electrodes, we integrate oligo(phenylene ethynylene) molecular rods, and measure resistance before and after gap formation and with and without contacted molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20 K and 150 K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 ± 0.4 ns to 1.8 ± 0.4 ns, for 20 K to 150 K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 ± 0.4 ns to 3.2 ± 0.4 ns, for 25 K to 77 K), both 10 times slower than reported vacuum-deposited contacts.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Schottky contacts to In{sub 2}O{sub 3}

n-type binary compound semiconductors such as InN, InAs, or In{sub 2}O{sub 3} are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In{sub 2}O{sub 3} and discuss temperature-dependent current-voltage characteristics of Pt/In{sub 2}O{sub 3} in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-Q contacted ring microcavities with scatterer-avoiding “wiggler” Bloch wave supermode fields

High-Q ring resonators with contacts to the waveguide core provide a versatile platform for various applications in chip-scale optomechanics, thermo-, and electro-optics. We propose and demonstrate azimuthally periodic contacted ring resonators based on multi-mode Bloch matching that support contacts on both the inner and outer radius edges with small degradation to the optical quality factor (Q). Radiative coupling between degenerate modes of adjacent radial spatial order leads to imaginary frequency (Q) splitting and a scatterer avoiding high-Q “wiggler” supermode field. We experimentally measure Qs up to 258 000 in devices fabricated in a silicon device layer on buried oxide undercladding and up to 139 000 in devices fully suspended in air using an undercut step. Wiggler supermodes are true modes of the microphotonic system that offer additional degrees of freedom in electrical, thermal, and mechanical design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

The features of ballistic electron transport in a suspended quantum point contact

A suspended quantum point contact and the effects of the suspension are investigated by performing identical electrical measurements on the same experimental sample before and after the suspension. In both cases, the sample demonstrates conductance quantization. However, the suspended quantum point contact shows certain features not observed before the suspension, namely, plateaus at the conductance values being non-integer multiples of the conductance quantum, including the “0.7-anomaly.” These features can be attributed to the strengthening of electron-electron interaction because of the electric field confinement within the suspended membrane. Thus, the suspended quantum point contact represents a one-dimensional system with strong electron-electron interaction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Method for characterizing the contact resistance of metal-vanadium dioxide thin film interfaces

The standard method for determining the contact resistance of planar metal-semiconductor interfaces can underestimate the true contact resistance under normal operating conditions, as it relies on the resistivity of the semiconductor material remaining constant during measurement. However, the strong temperature dependence of the resistivity of VO{sub 2} requires a modified approach that maintains a constant power density dissipated within the film to account for Joule heating. We develop a method for measuring contact resistance in semiconductors with a high thermal coefficient of resistivity, demonstrate this method with an example, and compare the results with the standard technique.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗