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At least 937 records · Page 52

Avalanche proton-boron fusion based on elastic nuclear collisions

Recent experiments done at Prague with the 600 J/0.2 ns PALS laser interacting with a layer of boron dopants in a hydrogen enriched target have produced around 10{sup 9} alphas. We suggest that these unexpected very high fusion reactions of proton with {sup 11}B indicate an avalanche multiplication for the measured anomalously high nuclear reaction yields. This can be explained by elastic nuclear collisions in the broad 600 keV energy band, which is coincident with the high nuclear p-{sup 11}B fusion cross section, by the way of multiplication through generation of three secondary alpha particles from a single primarily produced alpha particle.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ablation of hexagonal boron nitride by UV laser radiation

We report an experimental study of ablation of hexagonal boron nitride ceramics irradiated by 193- and 248-nm laser pulses. The dependences of the material removal rate and the crater wall slope on the energy density in the irradiation spot are obtained. An ablation regime is found, when the material removal rate reaches 5 mm per pulse, which is not typical of nanosecond laser radiation. It is shown that at relatively low radiation intensities (about 5–10 J cm{sup −2}), the slope angle of the formed crater wall does not exceed 20°. (interaction of laser radiation with matter)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

First-principles study of boron oxygen hole centers in crystals: Electronic structures and nuclear hyperfine and quadrupole parameters

The electronic structures, nuclear hyperfine coupling constants, and nuclear quadrupole parameters of fundamental boron oxygen hole centers (BOHCs) in zircon (ZrSiO{sub 4}, I4{sub 1}/amd) and calcite (CaCO{sub 3}, R3c) have been investigated using ab initio Hartree-Fock (HF) and various density functional theory (DFT) methods based on the supercell models with all-electron localized basis sets. Both exact HF exchange and appropriate correlation functionals are important in describing the BOHCs, and the parameter-free hybrid method based on Perdew, Burke, and Ernzerhof density functionals (PBE0) turns out to be the best DFT method in reproducing the electron paramagnetic resonance (EPR) data. Our results reveal three distinct types of simple-spin (S = 1/2) [BO{sub 3}]{sup 2-} centers in calcite: (i) the classic [BO{sub 3}]{sup 2-} radical with the D{sub 3h} symmetry and the unpaired spin equally distributed on the three oxygen atoms (i.e. the O{sub 3}{sup 5-} type); (ii) the previously reported [BO{sub 2}]{sup 0} center with the unpaired spin equally distributed on two of the three oxygen atoms (O{sub 2}{sup 3-}); and (iii) a new variety with {approx}90% of its unpaired spin localized on one (O{sup -}) of the three oxygen atoms with a long B-O bond (1.44 A). Calculations confirm the unusual [BO{sub 4}]{sup 0} center in zircon and show it to arise from a highly distorted configuration with 90% of the unpaired spin on one oxygen atom that has a considerably longer B-O bond (1.68 A) than its three counterparts (1.45 A). The calculated magnitudes and directions of {sup 11}B and {sup 17}O hyperfine coupling constants and nuclear quadrupole constants for the [BO{sub 4}]{sup 0} center in zircon are in excellent agreement with the 15 K EPR experimental data. These BOHCs are all characterized by a small negative spin density on the central B atom arising from spin polarization. Our calculations also demonstrate that the spin densities on BOHCs are affected substantially by crystalline environments, and so periodic boundary treatment, such as the supercell scheme, is a must in accounting for the electronic and spin structures of BOHCs in crystals. These atomistic and electronic models of BOHCs in the crystalline matrices provide new insights into their precursors and counterparts in glasses and other amorphous materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10 C 2+x :H y ) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10 C 2+x :H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10 C 2+x :H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.

36 MATERIALS SCIENCE↗

Structural Features, Physicochemical, and Optical Characteristics of Lithium Niobate Crystals Grown from Boron-Doped Melts

Chemical interactions in the Li{sub 2}O−B{sub 2}O{sub 3}−Nb{sub 2}O{sub 5} system, as well as certain features of crystallization of LiNbO{sub 3} crystals growing from melts containing nonmetal impurities, are considered. It is shown that boron changes the structure of the melt and has a significant impact on the structure and physical characteristics of LiNbO{sub 3} : В crystals, practically not entering the lithium niobate structure. Notable changes and certain features were found in the Raman spectra of grown LiNbO{sub 3} : В crystals, which indicates changing the sequence of the main cations and vacancies along a crystal polar axis and distortion of the oxygen octahedrons. Meanwhile, the distortion of the oxygen octahedrons is anisotropic. LiNbO{sub 3} : В crystals have a higher structural homogeneity than congruent crystals, and are close in the number of NbLi defects to a crystal with a stoichiometric composition, differing from it by a substantially less photorefraction effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.

36 MATERIALS SCIENCE↗

Boron-lined parallel-plate Collar

This report presents boron-lined parallel plate technology features, experimental benchmarking of initial MCNP model, and parallel-plate UNCL collar optimization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

X-ray Excited Optical Luminescence from Hexagonal Boron Nitride Nanotubes: Electronic Structures and the Role of Oxygen Impurities

We report a study on the optical luminescence properties and the electronic structures of boron nitride nanotubes (BNNTs). BNNTs with natural B (80% {sup 11}B and 20% {sup 10}B) and pure {sup 10}B are investigated in comparison with hexagonal BN crystals using X-ray absorption near-edge structures (XANES) and X-ray excited optical luminescence (XEOL). We find that the BNNT specimen synthesized with natural B contains more oxide impurities than that with pure {sup 10}B, resulting in significantly different behavior in optical luminescence. All BN samples with hexagonal structures are found to emit strong luminescence, but the emission spectra are strongly morphology- and structure-dependent. XEOL and XANES measurements were carried out at the B K-edge, N K-edge, and O K-edge in order to reveal the origin of different luminescence channels and the corresponding electronic structures in these BN materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Thermal Conductivity and Seebeck Coefficients of Icosahedral Boron Arsenide Films on Silicon Carbide

The thermal conductivity of icosahedral boron arsenide (B{sub 12}As{sub 2}) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3{omega} technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 {micro}V/K and 136 {micro}V/K for samples grown at 1350 C with AsH{sub 3}/B{sub 2}H{sub 6} flow ratio equals to 1:1 and 3:5, respectively.

36 MATERIALS SCIENCE↗

Boron effects on fission product behavior under severe accident conditions

This paper addresses basic studies for the evaluation of boron (B) release from a degraded BWR control rod and its effect on cesium (Cs) and iodine (I) chemistry during a severe accident. Possible increase of gaseous iodine release induced by released B was predicted under various atmospheres by chemical equilibrium calculations. Results showed that the change in atmosphere affects B release fraction from the control rod and also the generation of volatile iodine species with the formation of CsBO{sub 2}. Under a steam-starvation atmosphere, B release fraction could be reduced by the formation of stable iron (Fe)-B alloys in the molten control rod materials and, therefore, the generation of gaseous iodine as well as CsBO{sub 2} are considered to be suppressed. The calculations results show that the B release kinetics as well as the atmosphere play an important role for the Cs and I vapor species. For the validation of these results, basic experiments for the evaluation of B release kinetics, thermochemical properties and phase states of Cs-B-O complex compounds, and reproduction tests focused on FP release and transport are underway. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Long-Life Lithium-Sulfur Batteries with a Bifunctional Cathode Substrate Configured with Boron Carbide Nanowires

Developing high-energy-density lithium–sulfur (Li–S) batteries relies on the design of electrode substrates that can host a high sulfur loading and still attain high electrochemical utilization. Herein, a new bifunctional cathode substrate configured with boron-carbide nanowires in situ grown on carbon nanofibers (B 4 C@CNF) is established through a facile catalyst-assisted process. The B 4 C nanowires acting as chemical-anchoring centers provide strong polysulfide adsorptivity, as validated by experimental data and first-principle calculations. Meanwhile, the catalytic effect of B 4 C also accelerates the redox kinetics of polysulfide conversion, contributing to enhanced rate capability. As a result, a remarkable capacity retention of 80% after 500 cycles as well as stable cyclability at 4C rate is accomplished with the cells employing B 4 C@CNF as a cathode substrate for sulfur. Moreover, the B 4 C@CNF substrate enables the cathode to achieve both high sulfur content (70 wt%) and sulfur loading (10.3 mg cm -2 ), delivering a superb areal capacity of 9 mAh cm -2 . In addition, Li–S pouch cells fabricated with the B 4 C@CNF substrate are able to host a high sulfur mass of 200 mg per cathode and deliver a high discharge capacity of 125 mAh after 50 cycles.

25 ENERGY STORAGE↗

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

2D heterostructures↗

A Review of Scalable Hexagonal Boron Nitride ( h -BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, in this work, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

2D materials↗

Sequential Dual Alignments Introduce Synergistic Effect on Hexagonal Boron Nitride Platelets for Superior Thermal Performance

Planarly aligning 2D platelets is challenging due to their additional orientational freedom compared to 1D materials. Here, this study reports a sequential dual-alignment approach, employing an extrusion-printing-induced shear force and rotating-magnetic-field-induced force couple for platelet planarly alignment in a yield-stress support bath. It is hypothesized that the partial alignment induced by a directional shear force facilitates subsequent axial rotation of the platelets for planar alignment under an external force couple, resulting in a synergistic alignment effect. This sequential dual-alignment approach achieves better planar alignment of 2D modified hexagonal boron nitride (mhBN). Specifically, the thermal conductivity of the 40 wt% mhBN/epoxy composite is significantly higher (692%) than that of unaligned composites, surpassing the cumulative effect of individual methods (only 133%) with a 5 times more synergistic effect. For 30, 40, and 50 wt% mhBN composites, the thermal conductivity values (5.9, 9.5, and 13.8 W m –1 K –1 ) show considerable improvement compared to the previously reported highest values (5.3, 6.6, and 8.6 W m –1 K –1 ). Additionally, a 3D mhBN/epoxy heat sink is printed and evaluated to demonstrate the feasibility of device fabrication. The approach enables the planar alignment of electrically or thermally conducting 2D fillers during 3D fabrication.

36 MATERIALS SCIENCE↗

Sieving Hydrogen Isotopes via Machine Learning Assisted Chemical Vapor Deposition (CVD) of High‐Quality Monolayer Hexagonal Boron Nitride (h‐BN) on Iron Foils

Atomically thin two-dimensional (2D) ceramics, such as monolayer hexagonal boron nitride (h-BN), present potential for disruptive advances in separations. However, sub-atomic scale separation of hydrogen isotopes (H + /D + ) require near pristine 2D material membranes, and scalable synthesis of such high-quality h-BN comparable to mechanically exfoliated crystals remains a significant challenge. Here, we report a scalable Fe-catalyzed chemical vapor deposition (CVD) process for bottom-up synthesis of large-area, high-quality monolayer h-BN films, overcoming key limitations of conventional ammonia-based routes. By leveraging mechanistic insights and higher CVD temperatures, we suppress multilayer formation and achieve uniform monolayer h-BN coverage on commercially available Fe foils. Machine learning enables systematic exploration of the complex, multi-dimensional CVD parameter space (growth time, temperature, precursor temperature, multilayer faction, coverage), providing data-driven approaches to visualize and identify process regimes facilitating predominantly monolayer h-BN growth with minimal secondary nuclei/ad-layers. The optimized Fe-catalyzed CVD h-BN membranes show high-quality as observed by proton/deuteron (H + /D + ) selectivity ≈8.45, approaching the highest quality benchmark of mechanically exfoliated h-BN (H + /D + selectivity ≈10) as well as significantly outperforming Cu-catalyzed CVD h-BN membranes (H + /D + selectivity ≈3.62, control selectivity ≈1.7). Our work provides a scalable cost-effective route for high-quality monolayer h-BN synthesis for sub-atomic scale separations (H + /D + ) and demonstrates the broader potential of machine learning-guided optimization of CVD for advancing synthesis of 2D materials.

36 MATERIALS SCIENCE↗

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Abstract With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p‐type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P‐containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p‐type BP (5 × 10 20 cm −3 ) is achieved using C doping under B‐rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

36 MATERIALS SCIENCE↗

Controlled Gas Exfoliation of Boron Nitride into Few-Layered Nanosheets

The controlled exfoliation of hexagonal boron nitride (h-BN) into single- or few-layered nanosheets remains a grand challenge and becomes the bottleneck to essential studies and applications of h-BN. Here, we present an efficient strategy for the scalable synthesis of few-layered h-BN nanosheets (BNNS) via a novel gas exfoliation of bulk h-BN in liquid N 2 (L-N 2 ). The essence of this strategy lies in the combination of a high temperature triggered expansion of bulk h-BN and the cryogenic L-N 2 gasification to exfoliate the h-BN. The produced BNNS after ten cycles (BNNS-10) consisted primarily of fewer than five atomic layers with high a mass yield of 16~20%. N 2 sorption and desorption isotherms show that the BNNS-10 exhibited a much higher specific surface area of 278 m 2 /g –1 than that of bulk BN (10 m 2 /g –1 ). Through the investigation of the exfoliated intermediates combined with a theoretical calculation, we found that the huge temperature variation initiates the expansion and curling of the bulk h-BN. Subseqently, the L-N 2 penetrates into the interlayers of h-BN along the curling edge, followed by an immediate drastic gasification of L-N 2 , further peeling off h-BN. In conclusion, this novel gas exfoliation of high surface area BNNS not only opens up potential opportunities for wide applications, but also can be extended to produce other layered materials with high yeilds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗